• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.172-172
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• 2012

Non-thermal plasma has attracted medical researchers, since they showed higher apoptosis rate in cancer cells than normal cells. However, it is hard to conclude general cancer cell specific effect because comparison between normal and cancer cell activities after plasma treatment have not been reported yet. This research proposes a comparison of Dielectric Barrier Discharge (DBD) plasma effect on three normal cells lines and three cancer cells lines. We measured cell number, mitochondria activity (MTS assay) and amount of hydrogen peroxide (H2O2) for three days. The results show that the number of cancer cells decreased more than normal cells following of exposure time. On the other hand, mitochondria activities and amounts of H2O2 increased following of exposure time. In addition, we found that DBD plasma exposure on cell suspension in media and media only illustrated no difference in mitochondria activity, H2O2 quantity, and cell number. Thus, we can confirm higher apoptosis rate in cancer cells which is related to the reactive oxygen species (ROS) generated by DBD plasma. The related molecular mechanisms were investigated further.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.426-434
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• 2008

A space averaged $SiH_4/O_2/Ar$ simulator for the high density inductively coupled plasma sources for $SiH_4/O_2/Ar$ discharge is developed. The developed simulator uses space averaged fluid equations for electrons, positive ions, negative ions, neutral species, and radicals in $SiH_4/O_2/Ar$ plasma discharge, and the electron heating model including the anomalous skin effect. Using the developed simulator, the dependency of the density of charged particles, neutral particles, and radicals, the electron temperature, the plasma resistance, and the power absorption coefficient for the RF power and pressure is calculated.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.454-454
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• 2010

In order to achieve a high efficient a-Si solar cell, the TCO (transparent conductive oxide) substrates are required to be a low sheet resistivity, a high transparency, and a textured surface with light trapping effect. Recently, a zinc oxide (ZnO) thin film attracts our attention as new coating material having a good transparent and conductive for TCO of solar cells. In this paper the optical properties of $H_2$ post-treated BZO (boron doped ZnO, ZnO:B) thin film are investigated with $O_2$-plasma treatment. The BZO thin films by MOCVD (Metal Organic Chemical Vapor Deposition) are investigated and the samples of $H_2$ post-treated BZO thin film are tested with $O_2$-plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. We measured the optical properties and surface morphology of BZO thin film with and without $O_2$-plasma treatment. The optical properties such as transmittance, reflectance and haze are measured with integrating sphere and ellipsometer. This result of the BZO thin film with and without $O_2$-plasma treatment is application to the TCO for solar cells.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.80-80
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• 2002

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.14-21
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• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

• Korean Journal of Materials Research
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• v.2 no.1
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• pp.76-82
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• 1992

Deposition of $TEOS-O_3$ oxide film as inter-metal dielectric layer shows the substrate dependency according to the substrate material and pattern density and pitch size. To minimize substrate and Pattern dependency, TEOS-base and $SiH_4-base$ Plasma oxide were predeposited as underlying material on the substrate. The substrate dependency of $TEOS-O_3$ oxide film was more significant on TEOS-base plasma oxide than on $SiH_4-base$ plasma oxide. The dependency of $TEOS-O_3$ oxide film was remarkably reduced, or nearly eliminated, by $N_2$plasma treatment on TEOS-base plasma oxide, which appears to be caused by the O-Si-N structure, observed on the the surface of TEOS-base plasma oxide.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.2
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• pp.160-171
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• 2013

$LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ powder for cathode materials in lithium rechargeable batteries was treated by atmospheric plasma containing hydrogen to investigate the relationship between charge/discharge performance and physical/chemical changes of materials. Hydrogen plasma at atmosphere pressure was irradiated on the surface of active materials, and the change for their crystal structure, surface morphology, and chemical composition were observed by XRD, SEM-EDS and titration method, respectively. The crystal structure and surface morphology of $H_2$ plasma-treated powders were not changed but their chemical compositions were slightly varied. For charge/discharge test, $H_2$ plasma affected initial capacity and rate capability of active materials but continuous cycling was not subject to plasma treatment. Therefore, it was observed that $H_2$ plasma treatment affected the surface of materials and caused the change of chemical composition.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.309-309
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• 2010

We have investigated the effect of $H_2$ plasma treatment on the BZO (ZnO:B, Boron doped ZnO) thin films. The BZO thin films are prepared by LP-MOCVD (Low Pressure Metal Organic Chemical Vapor Deposition) technique and the samples of BZO thin film are performed with $H_2$ plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. After exposing $H_2$ plasma treatment, measurement of transmittance, reflectance and haze spectra in 300~1100 nm, electrical properties as resistivity, mobility and carrier concentration and work function was analysed. Regarding the results of the $H_2$ plasma treatment on the BZO thin films are application to the TCO for solar cells, such as the a-Si thin films solar cell.

• Membrane Journal
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• v.4 no.4
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• pp.205-212
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• 1994

Gas permeation properties of simple gases(He, $H_2,\;CO_2,\;O_2,\;N_2,\;CH_4$) through plasma-polymerized films were investigated, and the chemical structure of the plasma polymers was analyzed by infrared spectra. The plasma-polymerized films were prepared by plasma polymerization of fluorine-containing aromatic compounds, and permeation measurements were made at $35^{\circ}C$, latm. The permeability coefficient of the plasma films decreased as the size of penetrant molecules increased. The plasma polymers showed higher $CO_2/CH_4$ selectivities than those of commonly used polymers, while $O_2/N_2$ selectivities were similar of slightly lower than those of common polymers. FT-IR spectra shows that the plasma polymers contain both aromatic and aliphatic structures.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.426-428
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• 1989

As a first phase of plasma study intended for semiconductor processing research, we have studied the discharge phenomena. In particular, we have obtained a specific formula for the breakdown voltage as a function of the neutral state pressure of reactive gases. Our experimental results with H2,O2,Ar,CF4 seem ro verify this formula. In addition we find the voltage levels for various gases in the descending order of CF4>O2=Ar>H2 in high pressure region, while H2>CF4>O2>Ar in low pressure region. When H2 and CF4 were mixed, we observe the overall voltage dominated by the gas with lower breakdown volotage.