• ALGAE
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• v.27 no.2
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• pp.125-134
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• 2012

Germanium dioxide ($GeO_2$) has been used for many years in the cultivation of red and green algae as a means of controlling the growth of diatoms. Brown algae are sensitive to $GeO_2$, however, the basis of this sensitivity has not been characterized. Here we use embryos of $Fucus$ $vesiculosus$ to investigate morphological and physiological impacts of $GeO_2$ toxicity. Morphometric features of embryos were measured microscopically, and physiological features were determined using pulse amplitude modulated (PAM) fluorometry. At 5 mg $L^{-1}$ $GeO_2$, embryos grew slower than controls and developed growth abnormalities. After 24 h, initial zygote divisions were often oblique rather than transverse. Rhizoids had inflated tips in $GeO_2$ and were less branched, and apical hairs were deformed, with irregularly aligned, spheroidal cells. Minimum fluorescence ($F_0$) showed minor differences over the 10 days experiment, and pigment levels (chlorophylls $a$, $c$ and total carotenoids) showed no difference after 10 days. Optimum quantum yield increased from ca. 0.52 at 24 h to 0.67 at 5 days, and $GeO_2$-treated embryos had higher mean values (significant at 3 and 5 days). Optimum quantum yield of photosystem II (${\Phi}_{PSII}$) was stable in control thalli after 5 days, but declined significantly in $GeO_2$. Addition of silica (as $SiO_2$) did not reverse the effects of $GeO_2$. These results suggest that $GeO_2$ toxicity in brown algae is associated with negative impacts at the cytological level rather than metabolic impacts associated with photosynthesis.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.4
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• pp.281-286
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• 2007

In this paper, sub-circuits for 24 GHz phase locked 100ps(PLLs) using $0.5{\mu}m$ SiGe HBT are presented. They are 24 Ghz voltage controlled oscillator(VCO), 24 GHz to 12 GHz regenerative frequency divider(RFD) and 12 GHz to 1.5 GHz static frequency divider. $0.5{\mu}m$ SiGe HBT technology, which offers transistors with 90 GHz fMAX and 3 aluminum metal layers, is employed. The 24 GHz VCO employed series feedback topology for high frequency operation and showed -1.8 to -3.8 dBm output power within tuning range from 23.2 GHz to 26 GHz. The 24 GHz to 12 GHz RFD, based on Gilbert cell mixer, showed 1.2 GHz bandwidth around 24 GHz under 2 dBm input and consumes 44 mA from 3 V power supply including I/O buffers for measurement. ECL based static divider operated up to 12.5 GHz while generating divide by 8 output frequency. The static divider drains 22 mA from 3 V power supply.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.584-588
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• 2011

The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300~800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.713-721
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• 1997

Molecular dynamic (MD) simulations with new interatomic potential function including the covalent bond were performed on the phase transition of $\alpha$-quartz-type GeO2 under high pressure. The optimized crystal structure and the pressure dependence of the lattice constant showed higher reproducibility than the previous models and were in very good agreement with the experimental data. A phase transition of $\alpha$-quartz and $\alpha$-quartz-type GeO2 by simulation was found approximately 24 GPa and 6-7 GPa, respectively. This phase transition involved an abrupt volume shrinkage and showed 4-6 coordination mixed structure with the increasing in the coordination number of cation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.192-192
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• 2013

본 연구에서는 RF/DC 마그네트론 스퍼터링 시스템을 이용하여co-sputtering 방법으로 성장시킨 고이동도를 갖는Ge-doped $In_2O_3$In2O3 (IGO) 박막의 전기적, 광학적, 구조적 특성을 평가하고, 이를 유기태양전지와 유기발광다이오드에 적용함으로써 고이동도 IGO 투명전극의 소자 적용가능성을 타진하였다. GeO2 타겟에 인가되는 도핑 Power와 급속열처리 온도가 30 W, $500^{\circ}C$일 때, 최적화 된 IGO 박막으로부터 $2.8{\times}10^{-4}$ Ohm-cm의 낮은 비저항과 86.9% (550 nm)의 높은 투과도를 확보하였다. 뿐만 아니라 Near Infra-red (750~1,200 nm) 영역에서의 IGO투명전극의 광투과율이 결정질의 ITO보다 높은(약15%) 투과도를 보이는 것을 통해 IGO박막의 높은 LAS (Lewis Acid Strength) 값을 가지는 Ge 원소의 도핑이 NIR 영역의 광투과율 향상에 미치는 영향을 확인할 수 있었다. 최적 조건의 IGO 박막을 적용하여 Fill Factor 67.38%, Short circuit current density 8.43 mA/cm2, open circuit voltage 0.60 V, efficiency 3.44%의 유기태양전지 및 19.24%의 외부양자효율을 갖는 유기발광다이오드를 제작함으로써 결정질 ITO 전극(20.05%)을 대체할 수 있는 고투과, 고이동도 IGO 투명 전극 및 이를 이용한 광전소자 적용 가능성을 타진하였다.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1424-1432
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• 1995

Chalcogenide glasses having IR (8~12${\mu}{\textrm}{m}$) transmittance were prepared and their densities, thermal and mechanical properties, IR-transmittances and chemical durabilities were determined. Glass transition temperatures (Tg) of Ge-As-Se, Ge-As-Se-Te and Ge-SE-Te system glasses were in the range of 280~3$65^{\circ}C$, 210~236$^{\circ}C$ and 210~26$0^{\circ}C$, respectively. Crystallization temperature (Tc) of Ge-Se-Te system glass was in the range of 305~40$0^{\circ}C$. Their thermal expansion coefficients($\alpha$) were in the range of 11.7~15.2$\times$10-6/K, 15.4~16.0$\times$10-6/K and 17.4~27.8$\times$10-6/K, respectively. Their MOR, hardness and fracture toughness were in the range of 15.2~18.6MPa, 36.1~58.2Kg/$\textrm{mm}^2$, 1.0~1.3 MPa.mm1/2, 18.9~24.9 MPa, 40.9~65.1Kg/$\textrm{mm}^2$, 1.3~1.5 MPa.mm1/2, and 24.1~30.8 MPa, 40.9~86.0Kg/$\textrm{mm}^2$, 1.4~1.8 MPa.mm1/2, respectively. IR transmittance of Ge-Se-Te system glass was about 60%. Ge-O extrinsic absorption peaks at 8, 12 ${\mu}{\textrm}{m}$ were significantly eliminated by the addition of Mg. Chemical durabilities in deionizied water of Ge-Se-Te system glass were good and IR-transmittances decreased with leaching time and temperature.

• Korean Journal of Materials Research
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• v.32 no.9
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• pp.379-383
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• 2022

In this study, Barium Germanium glasses were prepared with a composition of xBaO-(72-x)GeO₂-8La₂O₃-20ZnO where x = 16.0, 18.0, 20.0, 22.0 and 24.0 mol% respectively. Their physical and optical properties, such as refractiveness index, glass transition temperature (T_g), softening temperature (T_s), transmittance and Knoop hardness were studied. The results showed that refractive index, T_g, T_s and coefficient of thermal expansion (CTE) increased with increasing BaO concentration. The refractive index of all the prepared samples was observed between 1.7811 to 1.7881. The Abbe number was calculated by formula using n_d (589.3 nm), n_f (656.3 nm) and n_c (486.1 nm) and observed to be between 38 to 40. The Abbe number of the prepared sample was similar to that of BaO and GeO₂. The transmittance of the prepared glasses was observed to be between 80 ~ 82 % throughout the range from 200 nm to 800 nm. Knoop hardness divided into seven steps were measured 5 class (≥ 450 ~ < 550) of all prepared samples.

• Korean Journal of Medicinal Crop Science
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• v.24 no.3
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• pp.214-221
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• 2016

Background: This study was conducted to investigate the effects of germanium treatment on the growth and organic germanium production in the roots of Oplopanax elatus plantlets. Methods and Results: O. elatus plantlets were cultured in Murashige and Skoog (MS) medium with different concentrations of germanium dioxide ($GeO_2$) to analyze optimum growth conditions. Exogenous treatment of $10mg/{\ell}\;GeO_2$ promoted growth and an increase in the contents of chlorophyll a, b and carotenoid in O. elatus. The germanium accumulation and production in roots of O. elatus plantlets treated with organic germanium reached the highest levels. The growth of the aerial and underground portion of O. elatus with organic germanium was greater than that of the control. The accumulation and production of organic germanium reached the highest level ($40.89{\mu}g/plantlet$) with the treatment of $50mg/{\ell}\;GeO_2$. Antioxidant activity measured by DPPH and ABTS assays also increased with the germanium treatment and improved the DPPH and ABTS radical activity by 200% compared with that in the control. In addition, the total phenol and flavonoid contents of the plantlets with a treatment of $50mg/{\ell}\;GeO_2$ were higher than in the control. Conclusions: Taken together, the growth of O. elatus was increased with the treatment of $50mg/{\ell}\;GeO_2$ germanium and the biological references improved, with increased antioxidant activity and organic germanium production.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.146-152
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• 2011

Thermal stability of $Ge_2Sb_2Te_5$ (GST) and $SiO_2$ doped GST (SGST) films for phase change random access memory applications was investigated by observing the change of surface roughness, layer density and composition of both films after isothermal annealing. After both GST and SGST films were annealed at $325^{\circ}C$ for 20 min, root mean square (RMS) surface roughness of GST was increased from 1.9 to 35.9 nm but that of SGST was almost unchanged. Layer density of GST also steeply decreased from 72.48 to 68.98 $g/cm^2$ and composition was largely varied from Ge : Sb : Te = 22.3 : 22.1 : 55.6 to 24.2 : 22.7 : 53.1, while those of SGST were almost unchanged. It was confirmed that the addition of a small amount of $SiO_2$ into GST film restricted the deterioration of physical and chemical properties of GST film, resulting in the better thermal stability after isothermal annealing.

• Korean Journal of Environmental Agriculture
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• v.24 no.1
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• pp.40-44
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• 2005

In order to obtain the basic information for agricultural utilization of Germanium(Ge), the growth characteristics and Ge absorption of rice plant were investigated with different Ge concentration in soil. Ge concentrations were treated with 0, 2.5, 5.0 7.5 and 10.0 mg/kg in pot(1/5,000a), respectively. As higher the Ge concentration in soil, the Ge absorption amount in straw, husk and brown rice were increased. But the yields were decreased with the increase of Ge phytotoxicity. When rice plant was grown more than 2.5 mg/kg Ge(as $GeO_2$) in the soil, growth was inhibited by germanium phytotoxicity and necrosis spots were observed in the rice leaf blades. Therefore the optimum concentration of Ge was less than 2.5 mg/kg in rice plant. When rice plant was cultivated on soil supplemented with 2.5 mg/kg Ge, Ge content in straw, husk and brown rice was 103.4, 30.2 and 3.02 mg/kg, respectively. The Ge content in plant was high in the order of straw > husk > brown rice. Most of the amino acids in rice were increased with the increase of Ge treatment, besides, total amino acid contents also increased.