• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.3
• /
• pp.318-326
• /
• 1996

This study is to investigate a chemical vapor deposition technique of copper film which is expected to be more useful as metallizations of microcircuit fabrication. An experimental equipment was designed and set-up for this study, and a Cu-precursor used that is a metal-organic compound, named (hfac)Cu(I)VTMS ; (hevaflouoroacetylacetonate trimethyvinylsilane copper). Base pressure of the experimental system is in $10^{-6}$ Torr, and the chamber pressure and the substrate temperature can be controlled in the system. Before the deposition of copper thin film, tungsten or titanium nitride film was deposited onto the silicon wafer. Helium has been used as carrier gas to control the deposition rate. As a result, deposition rate was measured as $1,800\;{\AA}/min$ at $220^{\circ}C$ which is higher than the results of previous studies, and the average surface roughness was measured as about $200\;{\AA}$. A deposition selectivity was observed between W or TiN and $SiO_{2}$ substrates below $250^{\circ}C$, and optimum results are observed at $180^{\circ}C$ of substrate temperature and 0.8 Torr of chamber pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.175-178
• /
• 2004

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.393-393
• /
• 2016

Cu(In,Ga)Se2 (CIGS) 박막 태양전지는 높은 효율과 낮은 제조비용, 높은 신뢰성으로 인해 박막 태양전지 중 가장 각광받고 있다. 특히 유리기판 대신 가볍고 유연한 철강소재나 플라스틱 소재를 이용하여 발전분야 외에 건물일체형, 수송용, 휴대용등 다양한 분야에 적용이 가능하다. 이러한 유연 기판을 이용한 CIGS 태양전지의 개발을 위해서는 기판의 특성에 따른 다양한 공정개발이 선행되어야 한다. Stainless steel과 같은 철강기판의 경우 Fe, Ni, Cr등의 불순물이 확산되어 흡수층의 특성을 저하시켜 효율을 감소시킨다. 따라서 이러한 철강 기판의 경우 불순물의 확산을 방지하는 확산방지막이 필수적이다. 이러한 유연기판의 특성을 고려하여 본 연구에서는 기존의 두껍고 추가 장비가 요구되는 SiOx나 Al2O3 대신 200nm 이하의 ZnO 박막을 이용하여 확산방지막을 제조하였다. 유연기판으로 STS 430 stainless steel을 이용하였다. 먼저 stainless steel 기판을 이용하여 기판에 의한 흡수층의 특성을 분석하였으며 ZnO 확산 방지막의 유무 및 두께에 따른 흡수층 및 소자의 특성을 분석하였다. 이때 확산 방지막은 기존 TCO 공정에서 사용되는 i-ZnO를 사용하였으며 RF sputter를 이용하여 50~200nm로 두께를 달리하며 특성 비교를 실시하였다. 효율은 확산방지막을 적용하지 않았을 때 약 5.9%에서 확산 방지막 적용시 약 10.7%로 증가하였다. 그 후 기판으로부터 확산되는 불순물의 유입에 의한 결함을 분석하기 위해 DLTS를 이용하여 소자 특성을 분석하였다. 온도는 80~300K으로 가변하며 측정을 실시하였으며 그 후 계산을 통해 activation energy와 capture cross section 값을 구하였다. DLTS 분석 결과 Ni이 CIGS 흡수층으로 확산되어 NiCu anti-site를 형성하여 태양전지의 효율을 감소시키는 것을 확인하였다. 모든 흡수층은 Co-Evaporation 방법을 이용하여 제조하였으며 제조된 흡수층은 SEM, XRF, XRD, GD-OES, PL, Raman등을 이용하여 분석하였으며 그 외 일반적인 방법을 이용하여 Mo, CdS, TCO, Al grid를 제조하였다. AR 코팅은 제외 하였으며 제조된 소자는 솔라 시뮬레이터를 이용하여 효율 특성 분석을 실시하였으며 Q.E. 분석을 실시하였다.

• Nuclear Engineering and Technology
• /
• v.54 no.3
• /
• pp.1024-1029
• /
• 2022

Composite scintillation screens on a base of Gd_1.2Y_1.8Ga_2.5Al_2.5O₁₂:Ce (GYAGG) scintillator have been evaluated for neutron detection. Besides the powdered scintillator, the composite includes ⁶LiF particles; both are merged with a binder and deposited onto the light-reflecting aluminum substrate. Results obtained demonstrates that screens are suitable for use with a silicon photomultiplier readout to create a prospective solution for a compact and low-cost thermal neutron sensor. Composite GYAGG/⁶LiF scintillation screen shows a pretty matched sensitivity and γ-background rejection with a widely used ZnS/⁶LiF screens however, possesses forty times faster response.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.176-177
• /
• 2013

Surface plasmon polaritons (SPPs) have attracted the attention of scientists and engineers involved in a wide area of research, microscopy, diagnostics and sensing. SPPs are waves that propagate along the surface of a conductor, usually metals. These are essentially light waves that are trapped on the surface because of their interaction with the free electrons of conductor. In this interaction, the free electrons respond collectively by oscillating in resonance with the light wave. The resonant interaction between the surface charge oscillation and the electromagnetic field of the light constitutes the SPPs and gives rise to its unique properties. In this papers, we studied theoretical and experimental extraordinary transmittance (T) and reflectance (R) of 2 dimensional metal hole array (2D-MHA) on GaAs in consideration of the diffraction orders. The 2d-MHAs was fabricated using ultra-violet photolithography, electron-beam evaporation and standard lift-off process with pitches ranging from 1.8 to $3.2{\mu}m$ and diameter of half of pitch, and was deposited 5-nm thick layer of titanium (Ti) as an adhesion layer and 50-nm thick layer of gold (Au) on the semiinsulating GaAs substrate. We employed both the commercial software (CST Microwave Studio: Computer Simulation Technology GmbH, Darmstadt, Germany) based on a finite integration technique (FIT) and a rigorous coupled wave analysis (RCWA) to calculate transmittance and reflectance. The transmittance was measured at a normal incident, and the reflectance was measured at variable incident angle of range between $30^{\circ}{\sim}80^{\circ}$ with a Nicolet Fourier transmission infrared (FTIR) spectrometer with a KBr beam splitter and a MCT detector. For MHAs of pitch (P), the peaks ${\lambda}$ max in the normal incidence transmittance spectra can be indentified approximately from SP dispersion relation, that is frequency-dependent SP wave vector (ksp). Shown in Fig. 1 is the transmission of P=2.2 um sample at normal incidence. We attribute the observation to be a result of FTIR system may be able to collect the transmitted light with higher diffraction order than 0th order. This is confirmed by calculations: for the MHAs, diffraction efficiency in (0, 0) diffracted orders is lower than in the (${\pm}x$, ${\pm}y$) diffracted orders. To further investigate the result, we calculated the angular dependent transmission of P=2.2 um sample (Fig. 2). The incident angle varies from 30o to 70o with a 10o increment. We also found the splitting character on reflectance measurement. The splitting effect is considered a results of SPPs assisted diffraction process by oblique incidence.

• Journal of the Korean Ceramic Society
• /
• v.48 no.4
• /
• pp.328-333
• /
• 2011

The influence of Al-doped ZnO (AZO) thin films degraded under high temperature and damp heat on the performance deterioration of Cu(In,Ga)$Se_2$ (CIGS) solar cells was investigated. CIGS solar cells with AZO/CdS/CIGS/Mo structure were prepared on glass substrate and exposed to high temperature ($85^{\circ}C$) and damp heat ($85^{\circ}C$/85% RH) for 1000 h. As-prepared CIGS solar cells had 64.91% in fill factor (FF) and 12.04% in conversion efficiency. After exposed to high temperature, CIGS solar cell had 59.14% in FF and 9.78% in efficiency, while after exposed to damp heat, it had 54.00% in FF and 8.78% in efficiency. AZO thin films in the deteriorated CIGS solar cells showed increases in resistivity up to 3.1 times and 4.4 times compared to their initial resistivity after 1000 h of high temperature and damp heat exposure, respectively. These results can be explained by the decreases in carrier concentration and mobility due to diffusion or adsorption of oxygen and moisture in AZO thin films. It can be inferred that decreases in FF and conversion efficiency were caused by an increase in series resistance, which resulted from an increase in resistivity of AZO thin films degraded under high temperature and damp heat.

• Journal of the Korean Ceramic Society
• /
• v.39 no.10
• /
• pp.935-942
• /
• 2002

Gallium-doped ZnO (GZO) films were deposited on soda-lime glass substrate without heating using Ne, Ar, or Kr gas. Electrical properties of GZO films deposited at various total gas pressures were investigated for the film positions corresponding to the erosion region (region B) and outside the erosion region (region A) of the target. Region B showed high resistivity, which was attributed to the decrease in carrier density and Hall mobility, compared to region A. GZO films deposited using Ne gas showed the degradation in resistivity and crystallinity, whereas, GZO films deposited using Kr gas showed the improvement in resistivity and crystallinity. This degradation in film properties could be attributed to the film damage caused by the bombardment of high-energy particles. Especially, the energies of recoiled neutral atoms ($Ne^0,\;Ar^0,\;Kr^0$) calculated by Monte Carlo simulation corresponded to experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.94-95
• /
• 2007

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program speed, reliability of memory device on interface trap between Si substrate and tunneling oxide was investigated. The devices were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SONOS cell transistors with larger interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. Therefore, to improve SANOS memory characteristic, it is very important to optimize the interface trap and charge trapping layer.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.7
• /
• pp.37-43
• /
• 2008

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program/erase (P/E) speed, reliability of memory device on interface trap between Si substrate and tunneling oxide and bulk trap in nitride layer were investigated using charge pumping method which has advantage of simple and versatile technique. We analyzed different SANOS memory devices that were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SANOS cell transistors with larger capture cross section and interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. The data retention was deteriorated as increasing P/E cycling number but not coincides with interface trap increasing tendency. This result once again confirmed that interface trap independence on data retention. And the result on different program method shows that HCI program method more degraded by locally trapping. So, we know as a result of experiment that analysis the SANOS Flash memory characteristic using charge pumping method reflect the device performance related to interface and bulk trap.

• Korean Journal of Microbiology
• /
• v.45 no.4
• /
• pp.411-415
• /
• 2009

Some microorganisms are capable of leaching Mn(II) from nonsulfidic manganese ores indirectly via nonenzymatic processes. Such reductive dissolution requires organic substrates, such as glucose, sucrose, or galactose, as a source of carbon and energy for microbial growth. This study investigated characteristics of Mn(II) leaching from manganese nodules by using heterotrophic Bacillus sp. strain MR2 provided with corn starch as a less-expensive substrate. Leaching of Mn(II) at 25.6 g Mn(II) $kg^{-1}$ nodule $day^{-1}$ was accompanied with cell growth, but part of the produced Mn(II) re-adsorbed onto residual $MnO_2$ particles after 24 h. Direct contact of cells to manganese nodule was not necessary as a separation between them with a dialysis tube produced similar amount [24.6 g Mn(II) $kg^{-1}$ nodule $day^{-1}$]. These results indicated an involvement of extracellular diffusible compound(s) during Mn(II) leaching by strain MR2. In order to optimize a leaching process we tested factors that influence the reaction, and the most efficient conditions were $25\sim35^{\circ}C$, pH 5~7, inoculum density of 1.5~2.5% (v/v), pulp density of 2~3 g/L, and particle size <75 ${\mu}m$. Although Mn(II) leaching was enhanced as particle size decrease, we suggest <212 ${\mu}m$ as a proper size range since more grinding means more energy consumption The results would help for the improvement of bioleaching of manganese nodule as a less expensive, energy-efficient, and environment-friendly technology as compared to the existing physicochemical metal recovery technologies.