• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.427-428
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• 2006

LED(Light-Emitting Diode)내에서의 전류 분포를 계산하기 위한 SPICE 기반의 3차원 회로 모델을 개발하였다. 이 모델은 고전압, 고전류에서 구동되는 고휘도 LED의 전류 밀집(current crowding) 현상을 최소화하기 위한 설계 최적화에 이용할 수 있다. 본 논문에서는 $GaN/Al_2O_3$ 고휘도 청색 LED 내에서의 전류 분포를 분석하여 전극 설계를 최적화하기 위한 연구를 수행하였다.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.17-20
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• 2000

We have enhanced the yield of 0.25 ${\mu}{\textrm}{m}$ T-gate $Al_{0.25}$G $a_{0.75}$As/I $n_{0.2}$G $a_{0.8}$As P-HEMT using three-layer E-beam lithography process and selective etching process. The three-layer resist structure (PMMA/copolymer/ PMMA=2000 $\AA$/3000 $\AA$/2000 $\AA$) and three developers (Benzene：IPA=1：1,Methanol：IPA =1：1,MIBK：IPA=1：3) were used for fabrication of a wide-head T-gate by the conventional double E-beam exposure technology. Also 1 wt% citric acid： $H_2O$$_2$：N $H_{4}$OH(200m1：4ml：2.2ml) solution were used for uniform gate recess. The etching selectivity of GaAs over $Al_{0.25}$G $a_{0.75}$As is measured to be 80. So these P-HEMT processes can be used in X-band MMIC LNA fabrication.ion.ion.ion.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.533-533
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• 2013

본 연구에서는 선형 대향 타겟 스퍼터 시스템을 이용하여 hetero sputtering방법으로 증착한Al-Ga-Zn-O (AGZO) 박막의 기판-타겟간 거리(Target-to-Substrate distance)에 따른 전기적, 광학적, 구조적 특성을 분석하였다. 타겟과 기판 사이의 거리 변화(30~120 mm)에 따른 AGZO 박막의 특성 변화를 관찰하기 위하여 일정한 DC 파워 250 W, 공정압력 0.3 mTorr, Ar 20 sccm에서 서로 다른 AZO 타겟과 GZO 타겟을 이용하여 hetero-sputtering 공정을 진행하였다. 최적의 타겟과 기판 사이의 거리를 결정하기 위해 AGZO 박막의 투과도(T)와 면저항($R_{sh}$)을 기반으로 figure of merit ($T^{10}/R_{sh}$)값을 계산하였다. 기판-타겟간 거리는 AGZO 박막의 밀도에 영향을 주는 핵심 인자로 30 mm에서 120 mm로 증가수록 밀도가 낮은 AGZO 박막이 형성되었다. 최적의 타겟과 기판 사이의 거리(30 mm)에서 AGZO 박막은 132 Ohm/sq의 낮은 면저항과 87.2%의 높은 투과도를 나타내었다. 그러나 기판-타겟간 거리가 증가할수록 같은 두께에서 면저항은 급격히 증가함을 발견할 수 있었으며 이러한 특성 변화는 스퍼터되어 기판에 도달하는 입자의 에너지 차이로 설명이 가능하다. 따라서 본 연구에서는 기판-타겟간 거리에 따른 AGZO 박막의 특성 변화를 설명할 수 있는 메커니즘을 다양한 분석을 통해 제시하였다. 또한 적화된 AGZO 투명 전극을 이용해 제작한 GaN-LED의 Damage free sputtering 기술에 대해서 소개한다.

• Journal of Korean Society of Forest Science
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• v.84 no.1
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• pp.87-96
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• 1995

We examined the effects of seed treatment on field germination rate and seedling growth for four woody species, Euonymus alatus, Thea sinensis, Zanthoxylum piperitum, Nandina domestia which are economically useful in Korea. The seeds of each species were purified carefully after collection during Oct. and Nov.. E. alatus, T. sinensis, and Z. piperitum were sowed in the experimental field after stored in open ground with treatment of Pon-Pon. $H_2O_2$, $GA_3$, scarification. and N. domestica was sowed in container within green house after treatment of three different periods(7, 15, 21days) in growth chamber(4, 25, $32^{\circ}C$). Germination rate and seedling growth were measured in mid-Oct.. In E. alatus germination rate was higher in storaging in open ground after soaking in $GA_3$(67.1%) than in only storaging in open ground(18.4%). But the rate in T. sinensis showed no differences between storage in open ground after treatment of $GA_3$, and scarification, and only storage in open ground, Germination rate of Z. piperitum was much higher in storaging in open ground after treatment of Pon-Pon(80.3%) than in only storaging in open ground(12.4%). In N. domestica. seeds stored for 7 days at $32^{\circ}C$ were germinated faster than those stored for 7 days at $4^{\circ}C$, and germination rate of the former was also higher than that of the latter. Peak Times of seed germination in field were order of E. alatus (32 days). Z. piperitum (49 days). T. sinensis (83 days), N. domestica (87 days). The growth of seedling germinated in field showed a good result because of early germination following the effect of seed treatment. The periods of highest growth performances of the seedlings were 72 days in late Jun.-mid Jul. in E. alatus. 59 days in late Jun.- mid Jul. in Z. Piperitum, and 45 days in mid Aug.- mid Sep. in T. sinensis.

• Korean Journal of Medicinal Crop Science
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• v.22 no.1
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• pp.53-59
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• 2014

This study was conducted to determine the effects of seed storage temperature and pre-treatment on seed germination, seedling quality and vigor index of wild Trichosanthes kirilowii and Trichosanthes kirilowii var. japonica. As a result the highest germination rate of T. kirilowii was the 95% at seed stored in room temperature and then soaking for 24 hours in $dH_2O$. And the highest germination rate of T. kirilowii var. japonica was 96% at seed stored in $2^{\circ}C$ and then soaking for 24 hours in $GA_3$ (100 ppm). But the seed germination rate was non-significance in pre-treatment at seed stored in room temperature $2^{\circ}C$. Seedlings of T. kirilowii and T. kirilowii var. japonica showed not only the best seedling quality but also seedling vigor index in seed stored at $2^{\circ}C$ and then soaking for 24 hours in $GA_3$ (100 ppm). In this research, T. kirilowii and T. kirilowii var. japonica seed were stored in room temperature or $2^{\circ}C$, and then sown in peat moss, seed germination rate was more than 90% and production of superior quality seedlings.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.431-431
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• 2016

Typical Cu(In,Ga)Se2 (CIGS)-based solar cells have a buffer layer between CIGS absorber layer and transparent ZnO front electrode, which plays an important role in improving the cell performance. Among various buffer materials, chemical bath deposition (CBD)-ZnS is being steadily studied to alternative to conventional CdS and the efficiency of CBD-ZnS/CIGS solar cell shows the comparable values with that of CdS/CIGS solar cell. The intriguing thing is that reversible changes occur after exposure to illumination due to the metastable defect states in completed ZnS/CIGS solar cell, which induces an improvement of solar cell performance. Thus, it implies that the understanding of metastable defects in CBD-ZnS/CIGS solar cell is important issue. In this study, we fabricate the ITO/i-ZnO/CBD-ZnS/CIGS/Mo/SLG solar cells by controlling the NH4OH mole concentration (from 2 M to 3.5 M) of CBD-ZnS buffer layer and observe their conversion efficiency with and without light soaking for 1 hr. From the results, NH4OH mole concentration and light exposure can significantly affect the CBD-ZnS/CIGS solar cell performance. In order to investigate that which layer can contain metastable defect states to influence on solar cell performance, impedance spectroscopy and capacitance profiling technique with exposure to illumination have been applied to CBD-ZnS/CIGS solar cell. These techniques give a very useful information on the density of states within the bandgap of CIGS, free carriers density, and light-induced metastable effects. Here, we present the rearranged charge distribution after exposure to illumination and suggest the origin of the metastable defect states in CBD-ZnS/CIGS solar cell.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.121-122
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• 2012

Iron-excess gallium ferrite, $Ga_{0.6}Fe_{1.4}O_3$ (GFO), is known to have room-temperature ferromagnetic phases and potentially exhibit ferroelectricity as well [1]. But, leaky polarization-electric field (PE) hysteresis curves of the GFO thin film are hurdle to prove its spontaneous polarization, in other words, ferroelecticity. One of the reasons that the GFO films have leaky PE hysteresis loop is carrier hopping between $Fe^{2+}$ and $Fe^{3+}$ sites due to oxygen deficiency. We focus on reducing conducting current by substituting divalent cations at $Fe^{2+}$ sites. GFO thin films were grown epitaxially along b-axis normal to $SrRuO_3/SrTiO_3$ (111) substrates by pulsed laser deposition. Current density of the ion-substituted GFO thin films was reduced by $10^3$ or more. Ferroelectric properties of the ion-substituted GFO thin films were measured using macroscopic and microscopic schemes. In particular, local ferroelectric properties of the GFO thin films were exhibited and their remnant polarization and piezoelectric d33 coefficient were obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.178.2-178.2
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• 2015

In and Ga doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered Polycarbonate (PC) substrates with RF magnetron sputtering and then the effect of Cu buffer layer on the optical and electrical properties of the films was investigated. While IGZO single layer films show the electrical resistivity of $1.2{\times}10-1{\Omega}cm$, IGZO/Cu bi-layered films show a lower resistivity of $1.6{\times}10-3{\Omega}cm$. Although the optical transmittance of the films in a visible wave length range is deteriorated by Cu buffer layer, IGZO films with 5 nm thick Cu buffer layer show the higher figure of merit of $2.6{\times}10-4{\Omega}-1$ than that of the IGZO single layer films due to the enhanced opto-electrical performance of the IGZO/Cu bi-layered films.

• The Journal of Natural Sciences
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• v.4
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• pp.103-142
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• 1991

These studies were carried out to select somatic hybrid using selectable marker genes of Nicotiana glauca transformed by NPTII gene and Solanum tuberosum transformed by T- DNA, and to study characteristics of transformant. The results are summarized as follows. 1. Crown gall tumors and hairy roots were formed on potato tuber disc infected by A. tumefaciens Ach5 and A. rhizogenes ATCC15834. These tumors and roots could be grown on the phytohormone free media. 2. Callus formation from hairy root was prompted on the medium containing 2, 4 D 2mg/I with casein hydrolysate lg/l. 3. The survival ratio of crown gall tumor callus derived from potato increased on the medium containing the activated charcoal 0. 5-2. 0mg/I because of the preventions on the other hand, hairy roots were necrosis on the same medium. 4. Callus derived from hairy root were excellently grown for a short time by suspension culture on liquid medium containing 2, 4-D 2mg/I and casein hydrolysate lg/l. 5. The binary vector pGA643 was mobilized from E. coli MC1000 into wild type Agrobacteriurn tumefaciens Ach5, A. tumefaciens $A_4T$ and disarmed A. tuniefaciens LBA4404 using a triparental mating method with E. ccli HB1O1/pRK2013. Transconjugants were obtained on the minimal media containing tetracycline and kanamycin. pGA643 vectors were confirmed by electrophoresis on 0.7% agarose gel. 6. Kanamycin resistant calli were selected on the media supplemented with 2, 4-D 0.5mg/1 and kanamycin $100\mug$/ml after co- cultivating with tobacco stem explants and A. tumefaciens LBA4404/pGA643, and selected calli propagated on the same medium. 7. The multiple shoots were regenerated from kanamycin resistant calli on the MS medium containing BA 2mg/l. 8. Leaf segments of transformed shoot were able to grow vigorusly on the medium supplemented with high concentration of kanamycin $1000\mug$/ml. 9. Kanamycin resistant shoots were rooting and elongated on medium containing kanamycin $100\mug$/ml, but normal shoot were not. 10. For the production of protoplast from potato calli transformed by T-DNA and mesophyll tissue transformed by NPTII gene, the former was isolated in the enzyme mixture of 2.0% celluase Onozuka R-10, 1.0% dricelase, 1.0% macerozyme. and 0.5M mannitol, the latter was isolated in the enzyme mixture 1.0% Celluase Onozuka R-10, 0.3% macerozyme, and 0.7M mannitol. 11. The optimal concentrationn of mannitol in the enzyme mixture for high protoplast yield was 0.8M at both transformed tobacco mesophyll and potato callus. The viabilities of protoplast were shown above 90%, respectively. 12. Both tobacco mesophyll and potato callus protoplasts were fused by using PEG solution. Cell walls were regenerated on hormone free media supplemented with kanamycin after 5 days, and colonies were observed after 4 weeks culture.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.