• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.50-53
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• 1992

The GaP crystals are growth by Synthesis Solute Diffusion(SSD) method and its properties are investigated. Etch pits density along vertical direction of ingot is increased from 3.8${\times}$10$^4$cm$\^$-2/ of first freeze to 2.3${\times}$10$\^$5/cm$\^$-2/ of last freeze part. The carrier concentration and mobilities are measured to 197.49$\textrm{cm}^2$/V. sec and 6.75${\times}$10$\^$15/cm$\^$-3/ at room temperature. The temperature dependence of optical energy gap is empilically fitted to E$\_$g/(T)=2.3383-(6.082${\times}$10$\^$-4/T${\times}$/(373.096+T)[eV]. Photo-luminescence spectra measured at low temperature are consist with sharp line-spectra near band-gap energy and radiative recombination between shallow Si-donor to Zn-acceptor and its phonon reprica, and broad emission. The infrared absorption in GaP is cause to phonon coupling modes of TO, LO, LA, TA$_1$, TA$_2$and vibration modes of Ga$_2$O, Si-donor and Zn-acceptor, respectively.

• ETRI Journal
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• v.18 no.4
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• pp.339-346
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• 1997

Good quality a-axis oriented thin films of $YBa_2Cu_3O_{7-x}$ may be grown by the use of a $PrBa_2Cu_3O_{7-x}$ (PBCO) layer as a template. Here we present a detailed study of the nucleation of the PBCO layer, explaining the orientations observed. It is determined that the wavy surface of a $LaSrGaO_4$ (LSGO) (100) substrate consists of the {101} planes by observing cross-sectional transmission electron microscopy images of the interface between the PBCO film and the substrate. The images and selected area diffraction patterns show that a mixed c-and b-axis oriented PBCO layer was initially grown on the substrate, followed by pure b-axis oriented PBCO growth. We explain that the c-axis oriented growth is the result of the growth of the PBCO (019) planes on the LSGO (101) planes. We conclude that the nucleation and growth of the PBCO films at the initial stages depends on the crystallographic plane of the substrate surfaces, however, as the film grows further, the kinetics of the deposition process favors b-axis oriented growth.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.28 no.4
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• pp.445-450
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• 1983

To investigate the effect of harvest time after heading, storage temperature and duration on the dormancy and germination in barley cultivars, the kernels were collected at 5 day intervals from 20 days after heading until 35 days. The kernels were dried at 2$0^{\circ}C$ for 7 days and storaged in freezing chamber (-15$^{\circ}C$). The kernels germinated better at 15$^{\circ}C$ than at $25^{\circ}C$, and 1% $H_2O$$_2$ and 3 ppm GA$_3$ treatments gave much higher germination percentage than non-treatment; $H_2O$$_2$ and GA$_3$ treatments were good for promoting germination of immature harvested kernels. Germination rate index were significantly correlated with germination percentage under $25^{\circ}C$ and 15$^{\circ}C$ temperature conditions. Hangmi, Jogangbori and Muanbori had deep or slight dormancy at the different harvesting time, especially Dusan #8 had the deepest dormancy. The dormancy broke more rapidly under 3$0^{\circ}C$ than 2$0^{\circ}C$ storage conditions, so high temperature accelerated dormancy breaking. Those results showed that dormancy was various with the cultivars, harvesting time, storage temperature and storage duration.

• Economic and Environmental Geology
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• v.31 no.5
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• pp.399-413
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• 1998

Daegang granite is located around the Namwon-gun, Cheolabuk-do, and is an elongate stock $(80 km^{2})$ in the NNE-SSW direction. Daegang granite has the very same mineralogical and geochemical characteristics as those of the typical A-type granites; (1) it is a one feldspar hypersolvus granite, and is classified as an alkali feldspar granite in the lUGS scheme, (2) has small amounts of Fe-rich biotite (annite) and alkali amphibole (ribeckite) that are late in the crystallization sequence of the granitic magma, (3) always contains opaque oxides, fluorite and zircon, (4) shows high and quite homogeneous $SiO_2$, content (mostly 72~77 wt.%) and $(Na_{2}O+K_{2}O)/Al_{2}O_{3}$ ratio (0.90~0.98), (5) contains high Ga, lOOOO*Ga/Ai, $K_{2}O+Na_{2}O$, $(K_{2}O+Na_{2}O)/CaO$, $K_{2}O/MgO$, FeO/MgO, agpaitic index, Zr, Nb, Ce, Y, Zn value or ratio that resemble to those of the Australian A-type granites (Whalen et al., 1987), and (6) has enriched LREE and HREE that show flat variation pattern with slightly depleted in HREE and profound Eu anomalies (Eu/Eu*=0.04~0.l4). In the tectonic discrimination diagrams of Pearce et al. (1984) and Eby (1992), Daegang granite is classified as a within plate granite and $A_{2}-type$.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.313-320
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• 1996

We have fabricated an in-plane aligned a-axis oriented YBa2Cu3O7-x (a-YBCO) thin film on a LaSrGaO4(100) substrate with a PrBa2Cu3O7-x(PBCO) template layer by two step plused laser deposition using 308 nm XeCl excimer laser. A YBCO layer and PBCO layer grown at low temperatures were used as template layers. We have investigated the effect of the deposition temperature of template layers on the superconducting and struc-tural properties of in-plane aligned a-YBCO thin films. An optimal deposition temperature of the PBCO template layers was 630. In-plane aligned a-YBCO thin films showed an anisotropy ratio in resistivity of 11.5 and a zero resistance temperature of 88 K.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.14-14
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• 2014

STT-MRAM의 구성물질인 magnetic tunnel junction의 효과적인 식각을 위하여 다양한 가스 조합을 연구하였다. 그 결과 $CH_4/N_2O$ gas 조합보다는 $CH_3OH$ gas 가 보다 향상된 식각 특성을 나타내었고 pulse duty ratio 변화와 기판온도 변화가 식각특성 향상에 영향을 주었음을 알 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.215.1-215.1
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• 2015

본 연구에서는 용액 공정 기반 ZrO2 절연막의 우수한 특성을 확인하기 위해 SiO2 절연막을 가지는 IGZO (Indium-Gallium-Zinc Oxide) 박막 트랜지스터와 비교했다. In:Ga:Zn=1:1:1의 비율의 0.3 M IGZO 용액과 0.2 M ZrO2용액을 사용하였다. ZrO2 박막 트랜지스터는 0.2M ZrO2 용액을 5번 반복 증착하며 140nm 두께의 ZrO2 절연막을 가지는 IGZO 박막 트랜지스터와 비교대상으로 동일한 두께의 SiO2의 절연막을 가지는 IGZO 박막 트랜지스터를 제작하였다. ZrO2 박막 트랜지스터의 문턱전압은 4.3V로 SiO2 박막 트랜지스터의 -6.1V보다 낮았고, 이동도는 $1.2356cm^2/V{\cdot}s$로 $0.0554cm^2/V{\cdot}s$ 보다 약 20배 높았다. 실험 결과를 통해 ZrO2를 절연막으로 사용한 박막 트랜지스터의 특성이 더 향상되었음을 확인하였다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.145-145
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• 1997

Recent progress of electric technology requires new piezoelectric crystals having superior properties such as zero temperature coefficients and large electromechanical coupling factors. We have developed a series of new leading chandidates, La$_3$Ga5SiO14(langasite, LGS), La3Nb0.5Ga5.5O14(LNG), La3Ta0.5O14(LTG), to satisfy those requirements. High quality LGS, LNG and LTG single crystals, with dimensions of 2 inches in diameter, were successfully grown by the Czochralski method at a pulling rate of 1mm/h. Since no variation of chemical composition was observed when whole melt in a crucible was crystallized, congruency of these compositions was confirmed. Physical constants such as elastic constants, dielectric constants and piezoelectric constants were measured. Filters and oscillators made of grown LGS, LNG and LTG single crystals showed superior properties such as three times wider passband than that of quartz, low insertion loss and easy processing, Langasite family crystals were shown to be superior materials to other known materials such as quartz, LiTaO$_3$, $\alpha$-AlPO$_4$ and Li$_2$B$_4$O7.

• Electrical & Electronic Materials
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• v.30 no.6
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• pp.3-9
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• 2017

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.486-486
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• 2014

CIGS 박막태양 전지는 I-III-VI2 Chalcopyrite 결정구조를 가진 화합물 반도체 태양전지로 인위적인 밴드갭 조작이 용이하여 효율 향상에 높은 가능성을 보이고 있다. 4원소 화합물인 CIGS 광흡수층의 대표적인 제조 방법으로는 co-evaporation 공정법이 있다. 동시 증발법은 CIGS 결정을 최적화하기 위하여 박막이 증착되는 동안 기판의 온도를 3단계로 변화시켜주는 3-stage 공정을 통하여 제작된다. 일반적으로 CIGS 박막태양전지는 전면전극으로 투명전도막이 사용되며 높은 광투과성과 전기전도성을 가져야 한다. 투명전도막의 광학적, 전기적 특성은 CIGS 박막태양전지의 효율에 영향을 미치기 때문에 최적화된 조건이 요구된다. 본 연구에서는 CIGS 광흡수층은 Ga/(In+Ga)=0.31, Cu/(In+Ga)=0.86으로 최적화 시켰으며, 투명전도막은 Al이 도핑된 ZnO 박막을 RF 마그네트론 스퍼터링법을 이용하여 증착하였다. ZnO:Al 박막의 두께를 가변하여 증착하였으며 박막의 특성을 평가하고, CIGS 광흡수층에 이를 적용함으로써 태양전지 변환효율 특성을 연구하였다. CIGS 박막 태양전지의 투명전극인 ZnO:Al 박막의 두께가 500 nm 일 때, Jsc=29.521 mA/cm2, Voc=564 mV, FF factor=71.116%, Efficiency=12.375%의 광 변환효율을 얻을 수 있었으며, 이에 따른 투명 전도막의 전기적, 광학적 특성을 통해 CIGS 박막태양전지에 미치는 영향에 대해 조사하였다.