• 한국결정성장학회지
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• 제28권3호
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• pp.135-139
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• 2018

본 연구에서는 HVPE 성장법을 이용하여 사파이어 기판 위에 알파 갈륨옥사이드를 성장시키며 VI/III 비의 변화에 따른 효과를 확인하였다. 성장된 알파 갈륨옥사이드의 표면은 평평하고 crack 없이 성장되었다. 성장된 갈륨옥사이드의 광학적 특성을 분석하기 위해 투과율을 측정하고 광학 밴드갭을 얻었다. 광학 밴드갭은 약 5.0 eV로 나타났고 VI/III 비가 증가함에 따라 비례하여 증가하는 결과를 보여주었다. 이론적 광학 밴드갭에 가장 근접한 VI/III 비가 23인 조건에서 성장된 알파 갈륨옥사이드의 결정성을 확인하기 위해 HR-XRD를 이용하여 FWHM을 측정하였고 이를 바탕으로 전위밀도를 계산하였을 때 나선형 전위밀도는 $1.5{\times}10^7cm^{-2}$, 칼날 전위 밀도는 $5.4{\times}10^9cm^{-2}$로 계산되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1229_1230
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• 2009

$SiO_2$ 패시베이션 층에 As+ 이온을 주입한 1.2 kV급 AlGaN/GaN 쇼트키 장벽 다이오드( Schottky Barrier Diode, SBD )를 제작하였다. 주입된 As+ 이온들은 역방향 바이어스에서 공핍 영역의 곡률을 변화 시켰고, 이로 인해 항복 전압이 증가하고 누설 전류가 감소하였다. 제안된 소자의 항복전압이 1204 V 이었고, 기존 소자의 항복전압은 604 V 이었다. 캐소드 전압이 100 V일 때 제안된 소자의 누설전류는 21.2 nA/mm 이었고, 같은 조건에서 제안된 소자는 $80.3{\mu}A/mm$ 이었다. 주입된 As+ 양이온은 이차원 전자 가스( Two-Dimensional Electron Gas, 2DEG )에 전자를 유도했고, 채널의 농도가 미세하게 증가하였다. 따라서 순방향 전류가 증가하였다.

• 대한화학회지
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• 제35권5호
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• pp.480-486
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• 1991

아닐린 및 o-클로로아닐린 용액내에서 브롬화에탄의 용해도를 5, 1.5$^{\circ}$ 및 25$^{\circ}$C에서 브롬화칼륨이 존재할 때와 존재하지 않을 때의 두 경우에 대하여 각각 측정하여 보았다. 브롬화칼륨이 존재하지 않을 때에 o-클로로아닐린에서 브롬화에탄의 용해도가 아닐린에서 보다 크다. 이것은 브롬화에탄과 o-클로로아닐린의 상호작용이 아닐린보다 더 강하다는 것을 나타낸다. 그리고 브롬화칼륨이 존재할 경우에는 용액내에서 브롬화에탄과 브롬화칼륨이 불안정한 착물이 생성된다. 이 착물을 여러 경우로 가정하여 계산하여 본 결과 1:1 착물일 때, 불안정 상수 K값이 비교적 일정한 값을 나타내었다. 그러므로 1:1 착물 $C_2H_5Br[\cdot}GaBr_3$가 형성됨을 알았으며, 이 착물은 용액내에서 다음 평형식에 의해서 이루어진다고 본다. $C_2H_5Br{\cdot}GaBr_3\;{\rightleftharpoons}\;C_2H_5Br+1/2Ga_2Br_6$ 브롬화칼륨과 브롬화에탄의 착물의 불안정도를 이와 대응하는 브롬화메탄과 비교하여 보았다. 또한 이 착물의 해리에 대한 엔탈피, 자유에너지 및 엔트로피 변화도 산출하였다.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.24-28
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• 2012

In this study, we fabricated an amorphous InGaZnO pseudo-MOS transistor (a-IGZO ${\Psi}$-MOSFET) with a stacked $Si_3N_4/SiO_2$ (NO) gate dielectric and evaluated reliability of the devices with various thicknesses of a $SiO_2$ buffer layer. The roles of a $SiO_2$ buffer layer are improving the interface states and preventing degradation caused by the injection of photo-created holes because of a small valance band offset of amorphous IGZO and $Si_3N_4$. Meanwhile, excellent electrical properties were obtained for a device with 10-nm-thick $SiO_2$ buffer layer of a NO stacked dielectric. The threshold voltage shift of a device, however, was drastically increased because of its thin $SiO_2$ buffer layer which highlighted bias and light-induced hole trapping into the $Si_3N_4$ layer. As a results, the pseudo-MOS transistor with a 20-nm-thick $SiO_2$ buffer layer exhibited improved electrical characteristics and device reliability; field effective mobility(${\mu}_{FE}$) of 12.3 $cm^2/V{\cdot}s$, subthreshold slope (SS) of 148 mV/dec, trap density ($N_t$) of $4.52{\times}1011\;cm^{-2}$, negative bias illumination stress (NBIS) ${\Delta}V_{th}$ of 1.23 V, and negative bias temperature illumination stress (NBTIS) ${\Delta}V_{th}$ of 2.06 V.

• 대한금속재료학회지
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• 제47권1호
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• pp.38-43
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• 2009

To investigate the effect of RF power on the structural, optical and electrical properties of amorphous InGaZnO (a-IGZO), its thin films and TFTs were prepared by RF magnetron sputtering method with different RF power conditions of 40, 80 and 120 W at room temperature. In this study, as RF power during the deposition process increases, the RMS roughness of a-IGZO films increased from 0.26 nm to 1.09 nm, while the optical band-gap decreased from 3.28 eV to 3.04 eV. In the case of the electrical characteristics of a-IGZO TFTs, the saturation mobility increased from $7.3cm^2/Vs$ to $17.0cm^2/Vs$, but the threshold voltage decreased from 5.9 V to 3.9 V with increasing RF power. It is regarded that the increment of RF power increases the carrier concentration of the a-IGZO semiconductor layer due to the higher generation of oxygen vacancies.

• 공업화학
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• 제8권3호
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• pp.382-388
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• 1997

본 연구는 펄스 반응기 및 고정층 연속반응기를 사용하여 ${\gamma}$-알루미나에 담지된 니켈촉매상에서 이산화탄소에 의한 프로판의 개질반응 특성을 고찰한 것이다 Ni/${\gamma}$-$A1_2O_3$촉매가 NiO/${\gamma}$-$A1_2O_3$촉매보다 $CO_2$의 해리능력과 프로판의 개질 능력이 우수한 것으로 나타났다. 프로판과 $CO_2$의 혼합물에 산소를 추가한 결과 프로판의 전환율이 증가하였고 표면의 탄소침적도 감소함을 알 수 있었다. Ni/${\gamma}$-$A1_2O_3$와 $Ga_2O_3$의 기계적 혼합 촉매는 Ni/${\gamma}$-$A1_2O_3$자체보다 촉매의 활성이 오래 유지되었고 두 상의 협동에 의한 상승효과(synergistic effect)가 관찰되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.237-238
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• 2006

The electrical properties such as dielectric constants and dielectric losses in the spinel samples of $LiGaTiO_4$, Li(Ga,Eu)$TiO_4$, $Li(Ga.Yb)TiO_4$ have been characterized by varying measuring temperature and frequency. The long range order structures are analyzed by rietveld refinement method. and local atomic disorder structures are analyzed by MEM (maximum entropy method). The relation between the crystal structure and dielectric properties are discussed. $LiGaTiO_4$ spinel has the IMMA with lattice constant, a = 5.86333, b=17.5872. c = 8.28375 ${\AA}$, Li-sites are partially substituted by Ga or Ti. Two crystallographic oxygen sites are partially occupied(40~50%). The dielectric constants of $LiGaTiO_4$, $LiYbTiO_4$, and $LiGa_{2/6}Eu_{1/6}Ti_{1.5}O_4$ ceramics were 127, 75 and 272, respectively at 100 kHz. The dielectric relaxation were observed in the $LiGaTiO_3$ ceramics and the temperature where dielectric loss shows maximum was $390^{\circ}C$ at 1 kHz and increased with increasing the measuring frequency.

• 한국분말재료학회지
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• 제28권2호
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• pp.143-149
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• 2021

In this study, (GaN)_1-x(ZnO)_x solid solution nanoparticles with a high zinc content are prepared by ultrasonic spray pyrolysis and subsequent nitridation. The structure and morphology of the samples are investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The characterization results show a phase transition from the Zn and Ga-based oxides (ZnO or ZnGa₂O₄) to a (GaN)_1-x(ZnO)_x solid solution under an NH3 atmosphere. The effect of the precursor solution concentration and nitridation temperature on the final products are systematically investigated to obtain (GaN)_1-x(ZnO)_x nanoparticles with a high Zn concentration. It is confirmed that the powder synthesized from the solution in which the ratio of Zn and Ga was set to 0.8:0.2, as the initial precursor composition was composed of about 0.8-mole fraction of Zn, similar to the initially set one, through nitriding treatment at 700℃. Besides, the synthesized nanoparticles exhibited the typical XRD pattern of (GaN)_1-x(ZnO)_x, and a strong absorption of visible light with a bandgap energy of approximately 2.78 eV, confirming their potential use as a hydrogen production photocatalyst.

• 한국표면공학회지
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• 제44권4호
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• pp.144-148
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• 2011

$Ga_2O_3$ doped $SnO_2$ thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to $600^{\circ}C$). The best opto-electrical properties is shown by the film deposited at substrate temperature of $300^{\circ}C$ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is $9.57{\times}10^{-3}\;{\Omega}cm$ with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.

• 생명과학회지
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• 제7권4호
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• pp.342-346
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• 1997

This experiment was carried out to clarify the effects of gibberellin(GA) aplication and bagging on repeening and quality in 'Delaware' grape berries. Treatments are 4 plots(2X2 factorial experiment); GA, GA+bagging, bagging and control. The clusters were dipped twice in 100 ppm GA with GA treatment : 10 days before and after the full bloom. The results obtained as follows: 1. GA treatment made the seedless grape berry reduced in the fresh weight but it hastened the ripening period about 2 weeks. 2. Total soluble solid(TSS), viscosity and pH value of berry juice increased with maturation. The concentration of TSS and viscosity were higher in GA treatment plot than GA non-treatment. 3. Berry-hardness, titratable acidity and alcohol inslouble solid(AIS) decreased with maturation. Expically berry-hardness and AIS decreased more greatly in GA non-treatment than GA treatment. 4. The concentration of anthocyanin increased with ripening but pectic substance didn't fluctuate nearly. These of anthocyanin and pectin were higher in GA non-treatment plot than GA treatment. 5. By analysis of factorial experiment GA treatment was highly significant with the $^{o}$Brix/Acidity ratio, juice viscosity and AIS, but high negatively, significant with berry-hardness and berry fresh weight. And it was significant with T S S and negatively, titratable acidity. Bagging was significant with $^{o}$Brix/Acidity ratio and AIS content, but negatively, titratable acidity. 6. Qualitative characters were high correlated with the $^{o}$Brix/Acidity ratio in simple correlation but direct effect by the path-coefficient analysis didn't coincide with simple correlation. The direct effect of pH was large and juice viscosity, the next. And that of berry-hardness was negligible but, AIS, small negatively.