• Proceedings of the Plant Resources Society of Korea Conference
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• 2022.09a
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• pp.46-46
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• 2022

본 연구의 목적은 약용과 식용으로서의 활용도가 높은 일당귀[Angelica acutiloba (Siebold & Zucc.) Kitagawa]의 GA₃농도에 따른 생육특성을 확인하고, 최적의 재배기술 개발 및 지속가능한 안정적인 작물생산에 대한 기초자료의 제공에 있다. 연구재료는 강원도 태백시에 위치하는 일당귀 재배농가에서 2021년 10월에 채종한 종자를 구입하였고, 영주시 풍기읍에 위치한 연구온실에서 연구를 수행하였다. 일당귀의 종자를 증류수에 48시간 침지 후 GA₃농도 4조건(50 ppm, 100 ppm, 500 ppm, 1,000 ppm)에 24시간 처리 후 72구 포트에 파종 후 출아율과 생육특성을 조사하였다. 연구결과 일당귀 종자는 16일이 경과한 시점부터 출아를 시작하였고, 500 ppm처리구에서 73.3%로 가장 높은 출아율을 나타냈다. 생육특성조사는 출아 후 40일(1차)과 80일(2차) 경과된 시점에서 총 2회를 수행하였는데 1차 생육조사에서는 주근길이와 직경을 제외한 모든 생육특성에서 처리구별 생육의 차이가 확인되지 않았으나 2차 생육조사에서는 지상부와 지하부의 모든 생육특성에서 처리구별 생육의 차이가 확인되었다. 잎수(6.3개)와 주근길이(4.26 cm)는 500 ppm처리구에서 가장 높은 생육량을 나타냈고, 지상부 높이(21.81 cm), 잎길이(9.0 cm), 잎너비(10.77 cm), 주근직경(5.71 mm)은 1,000 ppm처리구에서 가장 높은 생육량을 나타냈다. 따라서 GA₃ 처리에 따른 일당귀의 생육특성은 생육초기보다 후기로 갈수록 발현량이 높게 나타나는 것으로 판단된다. 또한 저농도의 GA₃처리보다 500-1,000 ppm 사이의 처리농도가 적합한 것으로 판단되며, 추후 일당귀의 유용성분 분석을 통한 이화학적 연구가 추가된다면 최적의 재배기술 확립을 통한 안정적인 작물 생산에 기여할 수 있을 것이라 사료된다.

• Electronics and Telecommunications Trends
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• v.4 no.3
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• pp.44-52
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• 1989

에피층을 이용하여 소자를 제작할 때 에피층의 품질은 그 소자의 성능에 결정적인 역할을 한다. 이러한 에피층의 결정성, 불순물의 종류 및 농도, 불순물의 에너지 준위, 조성 등을 평가 할 수 있는 방법으로 PL이 널리 사용되고 있다. 본 고에서는 MBE를 이용하여 GaAs, AlGaAs 층을 성장할 때 PL로 에피층을 평가하여 성장조건을 확립하기 위한 기초자료를 마련하고자 PL의 원리와 측정방법을 조사하고 MBE로 성장시킨 GaAs의 PL의 특성을 분석 정리하였다.

• Korean Journal of Weed Science
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• v.7 no.1
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• pp.78-83
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• 1987

This study was attempted to evaluate the combining effect of HBR (homobrassinolide) with the known growth regulators such as GA (gibberellic acid), BA(6-benzyl aminopurine), IAA (indole-3-acetic acid), B-9 (N-dimethylamino succinamic acid) and CCC (2-chloroethyl-trimethylammonium chloride) on the growth of radish hypocotyl. A single application of HBR increased hypocotyl growth as its rates increased from 0.1 to 1.0 ppm, showing a maximum increase at 1.0 ppm. GA and BA had no direct effects on hyopcotyl growth, but IAA showed some effect as its concentration increased. However, the mixed application of HBR with GA, BA and IAA increased the length of radish hypocotyl as the concentration of HBR became higher. The mixture of HBR with GA and BA showed antagonistic reaction on radish hypocotyl growth, but synergistic effect was shown in the higher rate mixture of HBR with IAA in the range of HBR at 0.03 to 0.30 ppm with IAA at 3.0 to 10.0 ppm, but antagonistic or additive response at the mixture of low rates. An increased growth of hypocotyl by HBR was ified by CCC, showing the strong antagonistic reaction, but B-9 was not able to ify HBR's effect on hypocotyl growth.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.10 s.340
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• pp.9-18
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• 2005

Analytical expressions for breakdown voltages of abrupt $p^{+}n$ junction of Si, GaAs, InP and In$In_{0.53}Ga_{0.47}AS$ were induced. Getting analytical breakdown voltages, effective ionization coefficients were extracted using lucky drift parameters of Marsland for each materials. The results of analytical breakdown voltages followed by ionization integral agreed well with experimental result within 10$\%$ in error for the doping concentration in the range of $10^{14}cm\;^{-3}\~5\times10\;^{17}cm\;^{-3}$.

• ETRI Journal
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• v.11 no.3
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• pp.3-10
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• 1989

변조도핑 AIGaAs/GaAs 이종구조의 양자우물에 감금된 이차원 전자가스층의 생성과 그 농도 및 이동도의 파악은 이 구조를 이용한 소자의 성능을 평가하기 위해 필수적이다. 그리고소자제작에 앞서 이차원 전자가스층 생성여부의 확인은 에피층 성장공정과 제작공정을 분리 검증하여 소자 제작후에 나타나는 문제점을 해결하기 위한 진단 단계를 줄일 수 있다. 본 논문에서는 이차원 전자가스층의 확인방법을 개발하기 위하여 변조도핑 이종구조의 PL을 측정하여 분석하고 지금까지 보고된 자료를 분석하여 새로운 피크에 대한 기구해석과 검증방법을 마련하였다.

• Journal of Korean Society of Forest Science
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• v.89 no.4
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• pp.522-526
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• 2000

We tried to mass-propagate Prunus yedoensis from Jeju through tissue culture. We investigated the effect of bud collection time, the concentration of $NH_4NO_3$ in media and plant growth regulators(BAP, $GA_3$ and IBA) on the differentiation of winter buds. Buds, taken in February, flushed well regardless of various in vitro conditions. Bud flushing rate was significantly different depending on the collection time. BAP appeared to be effective on bud flushing. Sixty percent of buds taken in October flushed on the media containing $3.0mg/{\ell}$ BAR. No buds flushed on the medium supplemented with IBA. Buds, after flushing in BAP media, grew as foliated shoots and showed a rosette of leaves. When $GA_3$ supplemented to the BAP-containing media as a higher concentration than that of BAP, shoots elongated and developed into normal shoots. The combination of BAP $1.0mg/{\ell}$ and $GA_3$ $2.0mg/{\ell}$ is most recommendable for shoot elongation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.1-5
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• 2000

Optical and electrical properties of GaSe:Er\ulcorner single crystals grown by the Bridgenman technique have been investigated by using optical absorption and h\Hall-effect measurement system. The Hall coefficients were mea-sured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration show the characteristic of a partially compensated p-type semiconductor. Carrier density(N\ulcorner) of GaSe doped with Erbium was measured about 3.25$\times$10\ulcorner [cm\ulcorner] at temperature 300K, which was higher than undoped specimen. Photon energy gap (E\ulcorner) of GaSe:Er\ulcorner specimen was measured about 1.79eV.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.42 no.5
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• pp.548-555
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• 1997

Sorghum seedlings lacking one of the phytochromes, phyB, have elongated internode, suggesting that they may have an alteration in gibberellin physiology. To test the possibility that phyB mutations affect seedling gibberellin perception and metabolism, the responsiveness of wild-type and phyB-1 seedlings to exogenous $GA_3$ was investigated. The phyB-1 showed higher internode elongation rate than the wild type in response to lower concentrations of exogenous $GA_3$ application, showing that the mutation causes an increase in responsiveness to GA. However, at the higher concentrations of $GA_3$ application, phyB-l and wild-type showed similar elongation rate, impling that responsiveness to higher concentrations of GA is not controlled by phytochrome. These results suggest that, although GAs are required for internode elongation, phyB does not act primarily by changing absolute levels of GAs but rather by decreasing seedling responsiveness to GAs at lower concentrations.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.23-28
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• 2010

In this paper, we investigated the polarization effects on the electrical and structural characteristics of AlGaN/GaN HEMT. Both the Al mole-fraction and the barrier thickness of AlGaN, which determine the profiles of a two-dimensional electron gas, were simulated to obtain the optimum HEMT structure affecting the polarization effect. As a results, we found that the amount of bound sheet charges was increased by 16% and the maximum drain current density ($I_D$,max) was increased by more than 37%, while AI mole fractions are changed from 0.3 to 0.4. We also observed a 37% improvement in maximum drain current density ($I_D$,max) by increasing AIGaN layer thickness from 17 to 38 nm. However when AlGaN layer thickness reached the critical thickness, DC characteristics were dramatically lowered due to 'bulk' relaxation in AlGaN layer.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.341-347
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• 1998

We analyzed photoreflectance (PR) characterization of the $Al_xGa_{1-x}As$ epilayer grown by molecular beam epitaxy (MBE) method. The band-gap energy $(E_0)$ satisfying low power Franx-Keldysh (LPFK) due to GaAs buffer layer is 1.415 eV, interface electricall field $(E_i)$ is 1.05$\times$$10^4$V/cm, carrier concentration (N) is $1.3{\times}10^{15}\textrm{cm}^{-3}$. In PR spectrum intensity analysis at 300 K the $A^*$ peak below $(E_0)$ signal is low and distorted because of residual impurity in sample growth. The trap characteristic time ${\tau}_i$ of GaAs buffer layer is about 0.086 ms, and two superposed PR signal near 1.42eV consist of the third derivative signal of chemically eteched GaAs substrate and Franz-Keldysh oscillation (FKO) signal due to GaAs buffer layer.