• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.984-989
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• 2012

We have investigated the structural, electrical and optical properties of Ga-doped ZnO (GZO) thin films prepared by RF magnetron sputtering with laboratory-made ZnO targets containing 1, 3, 5, 7 wt% of $Ga_2O_3$ powder as a doping source. The GZO thin films show the typical crystallographic orientation with c-axis regardless of $Ga_2O_3$ content in the targets. The $3,000{\AA}$ thick GZO thin films with the lowest resistivity of $7{\times}10^{-4}{\Omega}{\cdot}cm$ are obtained by using the GZO ($Ga_2O_3$= 5 wt%) target. Optical transmittance of all films shows higher than 80% at the visible region. The optical energy band gap for GZO films increases as the carrier concentration ($n_e$) in the film increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.231-231
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• 2010

GaN는 상온에서 3.4 eV의 넓은 밴드갭을 갖는 직접천이형 반도체로 우수한 전기적/광학적 특성 및 화학적 안정성으로 발광 다이오드 및 레이저 다이오드 등과 같은 광전소자 응용을 위한 소재로 많은 연구가 진행되어왔다. 특히, GaN 나노구조의 경우 낮은 결함밀도, 빠른 구동 및 고집적 특성 등을 가지기 때문에 효과적으로 소자의 광학적/전기적 특성을 향상시킬 수 있어 나노구조 성장을 위한 연구가 활발히 진행되고 있다. 최근에는 Metal organic vapor deposition (MOCVD), hot filament chemical vapor deposition (CVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE) 등 다양한 방법을 통해 성장된 GaN 나노구조가 보고되고 있다. 하지만 고가 장비 사용 및 높은 공정 온도, 복잡한 공정과정이 요구되며 크기조절, 조성비, 도핑 등과 같은 해결되어야 할 문제가 여전히 남아있다. 본 연구에서는 나노구조를 형성하기 위하여 보다 간단한 방법인 전기화학증착법을 이용하여 GaN 나노구조를 ITO 및 FTO가 증착된 전도성 glass 기판 위에 성장하였고 성장 메커니즘 및 그 특성을 분석하였다. GaN 나노구조는 gallium nitrate와 ammonium nitrate가 혼합된 전해질 용액에 Pt mesh 구조 및 전도성 glass 기판을 1cm의 거리를 유지하도록 담가두고 일정한 전압을 인가하여 성장시켰다. Pt mesh 구조 및 전도성 glass 기판은 각각 상대전극 (counter electrode) 및 작업전극 (working electrode)으로 사용되었고 전해질 용액의 농도, 인가전압, 성장시간 등의 다양한 조건을 통하여 GaN 나노구조를 성장하고 분석하였다. 성장된 GaN 나노구조 및 형태는 field emission scanning electron microscopy (FE-SEM)를 이용하여 분석하였고, energy dispersive X-ray (EDX) 분석을 통하여 정량 및 정성적 분석을 수행하였다. 그리고 성장된 GaN 나노구조의 결정성을 조사하기 위해 X-ray diffraction (XRD)을 측정 및 분석하였다. 또한, photoluminescence (PL) 분석으로부터 GaN 나노구조의 광학적 특성을 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.135-135
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• 2010

본 연구에서는 ZnO를 기반으로 하여 $In_2O_3$, $Ga_2O_3$를 혼합한 IGZO 박막의 물성들을 분석하였다. 광학적 특성 결과 가시광 영역에서 모두 80%이상의 투과율을 나타내었으며, 전기적 특성을 조사한 결과 $In_2O_3:Ga_2O_3$:ZnO (1:9:90 wt.%)의 IGZO박막에서 $1.90{\times}10^{-3}\;\Omega/cm$의 비저항을 확인 할 수 있었다. 또한 상온에서 $400^{\circ}C$로 기판온도에 변화를 주어 실험하였으며, 결정성을 분석하기 위하여 XRD (PANALYTICAL CO.)를 사용하였고, SEM (JEOL CO.) 을 이용하여 IGZO박막의 미세 구조를 확인하였다. UV-ViS spectrophotometer (SHIMADZU CO.) 을 사용하여 광학적 특성을 측정하였으며, Hall effect측정 장비를 이용하여 캐리어 농도 및 Hall이동도 변화에 따른 비저항을 비교 분석하였다.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.42 no.1
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• pp.42-48
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• 1997

Ten days old rice seedlings were treated with NaCl and the contents of endogenous hormones such as GA$_3$, ABA, IAA and zeatin were measured by ELISA. Water content and seedling growth were decreased as the salt concentration was increased. GA$_3$ increased up to 24 hours after NaCl treatment and decreased thereafter. ABA was raised by four times in 48 hours after NaCl treatment. IAA and zeatin decreased as the NaCl concentration and duration of treatment increased. GA$_3$ and ABA showed positive and negative correlation with the water content in the plant tissue, respectively.

• Journal of Life Science
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• v.25 no.4
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• pp.390-396
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• 2015

This study was carried out to investigate the action of phytohormones which influence the adventitious root formation of calli originating from the leaves of Persicaria perfoliata. The optimal medium condition for callus formation was ½-strength MS, 1% sucrose, and 4.5 μM 2,4-D. In order to determine which phytohormones had an effect on the adventitious root formation, the calluses were cultured in various media with different kinds of phytohormones. As a result, the medium with GA₃ or IAA was shown to induce root formation. To deeply investigate the effects of GA₃ and IAA, calli were cultured in 0.1, 1, and 10 mg/l levels of phytohormones. Numbers of roots formed per callus were 10.9, 14.2, 22.6 in GA₃, 5.8, 3.9, 1.1 in IAA, respectively. Therefore, the higher GA₃ or the lower IAA concentration, the more roots formed. To confirm this role of GA₃ we tested with inhibitors PBZ and NPA. GA₃ with PBZ resulted in reduction by 52.4~69.4% compared to GA₃ alone. In contrast, GA₃ with NPA resulted in an increase by -8~45.6% compared to GA₃ alone in root formation. Also, results were determined on the effect of GA₃ with other phytohormones on root formation. Kinetin, 2iP and ABA with GA₃ had a negative effect, but IAA with GA₃ showed a similar result to GA₃ alone. From these results we infer GA plays a key role and auxin has subsidiary activity on adventitious root formation. This is the first report that indicates GA₃ promotes adventitious root formation from calli in P. perfoliata.

• Journal of Bio-Environment Control
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• v.23 no.2
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• pp.77-82
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• 2014

The present study was conducted to establish an effect and a proper concentration for treatment with gibberellic acid ($GA_3$) and thidiazuron (TDZ), resulting with increase berry size and yield in Gaeryangmeoru grapes. Berry size was increased by treatment with $GA_3$, and the fruit clusters obtained for the groups treated with $GA_3$ concentrations of 100 and $200mg{\cdot}L^{-1}$ were bigger. The berry number was also enhanced in $GA_3$ treated groups, but the soluble solid content and acidity was not significantly different. Damage caused by $GA_3$ treatment, such as peel pollination and berry shatter, was observed in the group with $200mg{\cdot}L^{-1}$. The berry size was larger in group treated with a high concentration of $GA_3$ and TDZ respectively than in those treated with low concentrations in the treatment mixed $GA_3$ and TDZ; however, fruit with low soluble solid content and high acidity was harvested after $GA_3$ and TDZ treatment due to delay of berry ripening. The pericarp tissue layers were not changed, but the distance from the epidermis layer to vascular bundle tissue was increased as a result of $GA_3$ and TDZ treatment. Therefore, $GA_3$ and TDZ did not affect an cell division but not cell size, resulting in an enlarged berry size. It is necessary to treat plant growth regulators 2~3 times and immediately after berry set to enhance berry set rate, because the period of berry set is short. This study suggests that the proper concentration for enhancing berry size and set were up to $100mg{\cdot}L^1$ $GA_3$ or $50mg{\cdot}L^{-1}GA_3+1.25mg{\cdot}L^{-1}$ TDZ, and it is necessary to pay attention to harvest mature fruits because of the delay of ripening caused by the usage of TDZ.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.41.1-41.1
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• 2011

본 연구에서는 MOCVD법으로 사파이어 기판위에 u-GaN를 성장한 후 Mg을 도핑시켜 p-GaN를 성장하고, RF 스퍼터를 이용하여 n-ZnO를 도포하여 n-ZnO/p-GaN 이종접합을 형성한 후 진공증착기를 이용하여 Au/Ni를 증착시켜 발광다이오드(LED)를 제작하고 전기 광학적 특성을 조사하였다. 두께가 500 nm인 u-GaN 위에 성장된 p-GaN의 운반자 농도는 $1.68{\times}10^{17}\;cm^{-3}$ 이었다. 그리고 150, 300 nm 두께의 p-GaN에 대하여 측정된 DXRD 반치폭은 각각 450 arcsec, 396 arcsec 이었고, 상온에서 2.8~3.0 eV 영역에서 Mg 억셉터와 관련된 광루미네센스가 검출되었다. RF 스퍼터링에 의해 0.7 nm/min의 속도로 증착된 n-ZnO 박막은 증착 두께에 따라 비저항이 27.7 $m{\Omega}{\cdot}cm$ 에서 6.85 $m{\Omega}{\cdot}cm$ 까지 감소하였다. 그리고 n-ZnO 박막은 (0002)면으로 우선 배향되었으며, 상온에서 에너지갭 관련된 광루미네센스가 3.25 eV 부근에서 주되게 검출되었다. n-ZnO/p-GaN 이종접합 LED의 전류전압 특성곡선은 다이오드 방정식에 만족하는 특성을 나타내었다. 다이오드 지수는 3 V 이하 영역에서 1.64, 3~5 V 영역에서 0.85이었다. 그리고 5 V 이상 영역에서 공간전하의 제한을 받았으며, 다이오드 지수는 3.36이었다. 한편, 역방향 전류전압 특성은 p-GaN 박막의 두께에 영향을 받았으며, p-GaN 박막의 두께가 150, 300 nm 일 때 각각의 누설 전류는 $1.3{\times}10^{-3}$ mA와 $8.6{\times}10^{-5}$ mA 이었다. 상온에서 측정된 EL 스펙트럼의 주된 발광피크는 430 nm이었고, 반치폭은 49.5 nm이었다.

• Korean Journal of Materials Research
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• v.13 no.11
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• pp.717-720
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• 2003

Heavily $p^{ ＋}$-typed ($10^{20}$ $cm^{-3}$ ) GaAs epilayers have been grown on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A by a low-pressure metalorganic chemical vapor deposition. Carbon (C) tetrabromide (CBr$_4$) was used as a C source. At moderate growth temperatures and high V/III ratios, the hole concentration of C-doped GaAs epilayers shows the crystallographic orientation dependence. The bonding strength of As sites on a growing surface plays an important role in the C incorporation into the high-index GaAs substrates.

• Horticultural Science & Technology
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• v.29 no.6
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• pp.555-560
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• 2011

The objective of this study was carried out to investigate the proper plant growth regulator for increasing the number of flower, fruit set, and to enlarge the size of the berries in Ardisia pusilla. Flower bud formation was used rooted cutting, and fruit set, enlargement, and coloration of fruit were used with two years-old. $GA_3$ concentrations were treated with 0, 100, 200, or $400mg{\cdot}L^{-1}$. Flower bud formation was effective in $400mg{\cdot}L^{-1}$ $GA_3$ and it was 1.8 times greater than control. Plant growth regulators were applied by foliar spray at full bloom stage to increase the fruit set. As a result, $GA_3$ was the most effective for increasing fruit set. Also, auxins of 4-CPA (Tomatotone, Donbu hitech Co., Korea) and dichloprop triethanol amine (Antifall, Bayer Crop Science Co., Ltd., Korea) were effective. When $GA_3$ concentrations of 0.5 and $1.0mg{\cdot}L^{-1}$ were used, fruit set (%) reached to 70% and 77%, respectively. Effectiveness of $GA_3$ was 1.8 times greater than control. Also, auxins, dichloprop triethanol amine increased to about 7-12% during fruit setting, but cytokinin and anti-gibberellin were ineffective. To investigate the fruit enlargement and coloration, $GA_3$ was treated with 0.3, 0.6, and $1.2mg{\cdot}L^{-1}$. Fruit enlargement was achieved to about 15% by $GA_3$ $0.6mg{\cdot}L^{-1}$ when $GA_3$ was treated 3 times at the interval of 1 month per treatment when fruit size was about 2-3mm (after full-blooming two months). But anthocyanin contents for coloration of fruit skin were not significant according to $GA_3$ concentration. The results showed that $GA_3$ enhanced bud formation, fruit set and enlargement of fruit size in Ardisia pusilla.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.171-176
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• 2001

HgCdTe films were grown on the (100). (111), (211) CdZnTe, and (100) GaAs substrates by metal organic chemical vapor epitaxy. We have investigated the surface morphology, electrical properties, crystalline qualities, and composition of HgCdTe with substrates orientation. Three dimensional facet growth was occurred on (111) CdZnTe substrate. The crystalline quality of HgCdTe on (100) CdZnTe was superior to that of HgCdTe on (100) GaAs. FWHM values of double crystal x-ray diffraction of HgCdTe on (100) CdZnTe and (100) GaAs were 55 and 125arcsec, respectively. HgCdTe on GaAs substrate showed n-type conductivity with high mobility, however, HgCdTe on CdZnTe showed p-type conductivity with carrier concentration of higher than 10/sup 16/㎤.