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Effects of Doping Concentration on the Properties of Ga-doped ZnO Thin Films Prepared by RF Magnetron Sputtering

Ga의 도핑농도에 따른 ZnO 박막의 특성

  • Kim, Hyoung Min (Department of Semiconductor Engineering, Gyeongsang National University) ;
  • Ma, Dae Young (Department of Electrical Engineering, Gyeongsang National University) ;
  • Park, Ki Cheol (Department of Semiconductor Engineering, Gyeongsang National University)
  • 김형민 (경상대학교 반도체공학과) ;
  • 마대영 (경상대학교 전기공학과) ;
  • 박기철 (경상대학교 반도체공학과)
  • Received : 2012.09.11
  • Accepted : 2012.11.21
  • Published : 2012.12.01

Abstract

We have investigated the structural, electrical and optical properties of Ga-doped ZnO (GZO) thin films prepared by RF magnetron sputtering with laboratory-made ZnO targets containing 1, 3, 5, 7 wt% of $Ga_2O_3$ powder as a doping source. The GZO thin films show the typical crystallographic orientation with c-axis regardless of $Ga_2O_3$ content in the targets. The $3,000{\AA}$ thick GZO thin films with the lowest resistivity of $7{\times}10^{-4}{\Omega}{\cdot}cm$ are obtained by using the GZO ($Ga_2O_3$= 5 wt%) target. Optical transmittance of all films shows higher than 80% at the visible region. The optical energy band gap for GZO films increases as the carrier concentration ($n_e$) in the film increases.

Keywords

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