• 제목/요약/키워드: $Eu_2O_3$

검색결과 510건 처리시간 0.036초

LED용 Ba2+ Co-Doped Sr2SiO4:Eu 황색 형광체의 발광특성 (Luminescence Characteristics of Ba2+ Co-Doped Sr2SiO4:Eu Yellow Phosphor for Light Emitting Diodes)

  • 최경재;박정규;김경남;김창해;김호건
    • 한국세라믹학회지
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    • 제43권3호
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    • pp.169-172
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    • 2006
  • We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.

$Dy^{3+}$$Eu^{3+}$ 함량비가 $Ca_{2-1.5x}SiO_4 $형광체의 발광 특성에 미치는 영향

  • 김동균;조신호
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.170-170
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    • 2013
  • 형광체를 조명과 디스플레이 산업에 응용하기 위해서는 충분히 밝은 빛을 제공하는 형광체의 발광 세기가 중요한 변수이다. 이러한 발광 특성은 주로 모체 격자에 도핑 되는 활성제의 농도, 입자의 형상과 크기 분포의 균일성, 결정성에 따라 달라진다. 본 연구에서는 Ca2SiO4 모체 결정에 도핑한 활성제 Eu3+와 Dy3+ 이온의 농도를 변화시키면서 고상 반응법을 사용하여 높은 발광 효율을 갖는 Ca2-1.5xSiO4::Eux3+ 적색 형광체와 Ca2-1.5xSiO4:Dyx3+ 백색 형광체를 합성하였다. 특히, 활성제 Eu3+와 Dy3+ 이온 농도의 변화가 형광체의 결정 구조, 소성 온도, 입자의 표면 형상, 광학 스펙트럼의 발광 효율에 미치는 영향을 조사하여 최적의 합성 조건을 결정하였으며, 회절 신호의 반치폭과 발광 세기의 상호 관계를 조사하였다. Ca2-1.5xSiO4::Eux3+와 Ca2-1.5xSiO4:Dyx3+ 형광체 초기 분말 시료는 CaO (99.9% 순도), SiO2 (99.9%), Dy2O3 (99.9%)와 Eu2O3 (99.9%)인 화학 물질을 구입하여 초정밀 저울로 화학양론적으로 측정하였다. 이때 Eu와 Dy의 함량비는 x=0, 0.01, 0.05, 0.1, 0.15, 0.2 mol로 변화 시키면서 합성하였다. Ca2-1.5xSiO4: Dyx3+ 형광체 분말 시료의 경우에 소결 온도를 각각 $1000^{\circ}C$$1100^{\circ}C$로 달리하여 흡광과 발광 스펙트럼의 세기를 비교해 본 결과, 서로 다른 두 소결 온도에서 합성한 두 형광체 분말은 동일하게 Dy3+의 몰 비가 0.05 mol일 때 주 발광 스펙트럼의 세기는 최대값을 나타내었다. 파장 355 nm로 여기시킨 Dy3+ 함량비에 따른 Ca2-1.5xSiO4:Dyx3+ 형광체 분말의 발광 스펙트럼은 Dy3+ 함량비에 관계 없이 581 nm에서 가장 강한 황색 발광을 보였다. 함량비가 증가함에 따라 발광 스펙트럼의 변화가 관측되었는데, Dy3+의 몰 비가 0.01 mol~0.05 mol인 영역에서는 발광 세기가 증가하여 0.05 mol에서 최대를 나타내다가 Dy3+의 몰 비가 더욱 증가함에 따라 발광세기는 현저히 감소하는 경향을 나타내었는데, 이 현상은 농도 소광 현상으로 해석 할 수 있다. 이외에도, Eu3+와 Dy3+ 이온의 함량비와 소결 온도가 결정 입자의 크기와 흡광 스펙트럼에 미치는 결과를 조사하였다.

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LED용Mg2+·Ba2+Co-Doped Sr2SiO4:Eu 노란색 형광체의 발광특성 (Luminescence Characteristics of Mg2+·Ba2+ Co-Doped Sr2SiO4:Eu Yellow Phosphor for Light Emitting Diodes)

  • 최경재;지순덕;김창해;이상혁;김호건
    • 한국세라믹학회지
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    • 제44권3호
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    • pp.147-151
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    • 2007
  • An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

Synthesis and characterization of $Y_2O_3$:Eu nano phosphor powder by a new technique

  • Kwak, Min-Gi;Hong, Sung-Jei;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1367-1369
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    • 2006
  • In this paper, a new technique has been adopted for synthesis of nanophosphor particles of $Y_2O_3:Eu$ at low temperature. The optical properties of the prepared nanophosphor particles have been measured and the results have been compared with the properties of its bulk phosphor particles. The particle sizes of $Y_2O_3:Eu$ nanophosphor powder with doped-Eu concentration of 10wt% synthesized by our procedure is about 40nm. When the concentration of Eu was 10wt%, intensity of PL appeared the highest and 95% efficient as compared with bulk phosphor.

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Photoluminescence Properties of $Eu^{3+}-Activated\;YCa_3(GaO)_3(BO_3)_4$ phosphor

  • Lee, Dae-Won;Kwak, Chung-Heop;Jung, Ha-Kyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1360-1363
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    • 2006
  • A borate compound was adopted as new host material for $EU^{3+}$ activator. The $Eu^{3+}-doped\;YCa_3(GaO)_3(BO_3)_4$ (YCGB) phosphors were successfully synthesized. Also, their photoluminescence properties under the excitation of UV ray were measured. In the XRD patterns of the synthesized powders, most peaks were well-matched to a gaudefroyite phase. The emission of $Eu^{3+}$ in YCGB consists of a strong peak centered at 622 nm, which is attributed to $^5D_O-^7F_2$ transition of $Eu^{3+}$ and several weak peaks at near the wavelength. Optimum $Eu^{3+}$ concentration of the red phosphor under the excitation with the wavelength of 395 nm was about 75 mol%. This indicates that the red phosphor has a relatively higher critical concentration than that of the other $Eu^{3+}-doped$ phosphors. The dominant interaction character of $Eu^{3+}$ might be dipole-dipole interaction.

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열처리 분위기가 Eu 이온이 첨가된 Li-Al-O계 형광체 특성에 미치는 영향 (Effect of Heat-treatment Atmosphere on Photoluminescence of Eu-doped Li-Al-O System)

  • 김정석;천채일;채기웅
    • 한국세라믹학회지
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    • 제51권1호
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    • pp.25-31
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    • 2014
  • New green phosphor is synthesized by reducing $LiAlO_2:xEu^{3+}$ phosphors in a low pressure $H_2$ atmosphere. The $LiAlO_2:xEu^{3+}$ prepared by a solid state reaction method is reported as red phosphor. The effect of the reduction treatment on the $LiAlO_2:xEu^{3+}$ on the crystalline phase change and photoluminescence (PL) property are characterized. The reduced phosphor had a broad green light spectrum centered at 524 nm. The PL intensity of the reduced phosphor increased to a maximum at the reduction temperature of $1100^{\circ}C$. The PL intensity decreased with a further increase in the reduction temperature. The crystalline phase constituting the reduced phosphor varied with the temperature. A new crystalline phase $Li_2Al_4O_7$ was observed at $1100^{\circ}C$. The origin of the green-light emission is discussed in relation to the crystalline phase change.

Highly Luminescent (Zn0.6Sr0.3Mg0.1)2Ga2S5:Eu2+ Green Phosphors for a White Light-Emitting Diode

  • Jeong, Yong-Kwang;Cho, Dong-Hee;Kim, Kwang-Bok;Kang, Jun-Gill
    • Bulletin of the Korean Chemical Society
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    • 제33권8호
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    • pp.2523-2528
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    • 2012
  • Green phosphors $(Zn_{1-a-b}M_aM^{\prime}_b)_xGa_yS_{x+3y/2}:Eu^{2+}$ (M, M' = alkali earth ions) with x = 2 and y = 2-5 were prepared, starting from ZnO, MgO, $SrCO_3$, $Ga_2O_3$, $Eu_2O_3$, and S with a flux $NH_4F$ using a conventional solidstate reaction. A phosphor with the composition of $(Zn_{0.6}Sr_{0.3}Mg_{0.1})_2Ga_2S_5:Eu^{2+}$ produced the strongest luminescence at a 460-nm excitation. The observed XRD patterns indicated that the optimized phosphor consisted of two components: zinc thiogallate and zinc sulfide. The characteristic green luminescence of the $ZnS:Eu^{2+}$ component on excitation at 460 nm was attributed to the donor-acceptor ($D_{ZnGa_2S_4}-A_{ZnS}$) recombination in the hybrid boundary. The optimized green phosphor converted 17.9% of the absorbed blue light into luminescence. For the fabrication of light-emitting diode (LED), the optimized phosphor was coated with MgO using magnesium nitrate to overcome their weakness against moisture. The MgO-coated green phosphor was fabricated with a blue GaN LED, and the chromaticity index of the phosphor-cast LED (pc-LED) was investigated as a function of the wt % of the optimized phosphor. White LEDs were fabricated by pasting the optimized green (G) and the red (R) phosphors, and the commercial yellow (Y) phosphor on the blue chips. The three-band pc-WLED resulted in improved color rendering index (CRI) and corrected color temperature (CCT), compared with those of the two-band pc-WLED.

EU 역외가공규정의 주요 내용과 한-EU FTA에 대한 시사점 - EU CCC and Origin Protocol 역외가공규정을 중심으로 - (A Study on the Rules of Origin of Outward Processing and Its Implication - focused on the EU CCC and Origin Protocol -)

  • 안재진
    • 통상정보연구
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    • 제9권2호
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    • pp.205-230
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    • 2007
  • In modern manufacturing practice it is sometimes necessary to send products to another country for special processing which cannot be performed inside the territory of the zone and Outward Processing(OP) covers such situation. What's more, process and Rules of Origin(RoO) of OP is implicated in Korea' Free Trade Agreement(Korea-Singapore, Korea-EFTA and Korea-Asean FTA) because of the goods to be producted in Kaesong Industrial Complex. Thus, In this paper analyse a implication of OP's process and RoO focused on the two fold : (1) provide an overview of the objectives, types, effects of Outward Processing described in customs law and FTA provisions of EU and Korea; (2) present a comparative analysis of EU and Korean rules; (3) offer an appropriate proposal to Korea-EU FTA negotiation.

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Eu와 V 동시 도핑에 의한 BiFeO3 박막의 구조와 전기적 특성 (Structural and Electrical Properties of BiFeO3 Thin Films by Eu and V Co-Doping)

  • 장성근;김윤장
    • 한국전기전자재료학회논문지
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    • 제32권3호
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    • pp.229-233
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    • 2019
  • Pure $BiFeO_3$ (BFO) and (Eu, V) co-doped $Bi_{0.9}Eu_{0.1}Fe_{0.975}V_{0.025}O_{3+{\delta}}$ (BEFVO) thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by chemical solution deposition. The effects of co-doping were observed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the BEFVO thin film were improved as compared to those of the pure BFO thin film. The remnant polarization ($2P_r$) of the BEFVO thin film was approximately $26{\mu}C/cm^2$ at a maximum electric field of 1,190 kV/cm with a frequency of 1 kHz. The leakage current density of the co-doped BEFVO thin film ($4.81{\times}10^{-5}A/cm^2$ at 100 kV/cm) was two orders of magnitude lower than of that of the pure BFO thin film.