• Title/Summary/Keyword: $E_c/I_o$

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Bi(Pb)SrCaCuO superconductor fabricated by interdiffusion of SrCaCuO and BiPbCuO double layers (SrCaCuO와 BiPbCuO 이중층의 상호확산에 의해 제조된 Bi(Pb)SrCaCuO 초전도체)

  • 최효상;이중근;정동철;한병성
    • Electrical & Electronic Materials
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    • v.9 no.7
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    • pp.680-689
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    • 1996
  • SrCaCuO와 BiPbCuO 화합물로 이루어진 이중층시료가 만들어 졌으며, 소결과정에서 나타나는 확산과 입자간의 상호작용으로 108K의 임계온도를 나타내었다. 이 시료는 820.deg. C에서 0-210 시간동안 소결되었다. 초전도체의 생성, 성장메카니즘과 임계온도의 관계가 연구되었으며, 최적조건은 820.deg. C에서 210시간 소결하고 SrCaCuO와 BiPbCuO의 도포비가 1:0.6인 시편에서 나타났다. 또한 이중층시료에서 가장 좋은 조성비는 S $r_{2}$C $a_{2}$C $u_{2}$ $O_{x}$와 B $i_{1.9}$P $b_{0.5}$C $u_{3}$ $O_{y}$ 이었다.다.

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Synthesis and Characterization of Aluminum and Gallium Complexes of Heterocyclic Thiosemicarbazones. Crystal Structures of $Me_2M[SC_4H_3CHNNC(S)SCH_3$] (M=Al, Ga)

  • 강영진;유병우;강상욱;고재정;강승주
    • Bulletin of the Korean Chemical Society
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    • v.19 no.1
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    • pp.63-67
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    • 1998
  • The synthesis and characterization of the monomeric group 13 heterocyclic thiosemicarbazone complexes $Me_2M[SC_4H_3CHNNC(S)SCH_3]$ (M=Al (2), Ga (3)) are described. Compounds 2-3 were prepared using $MMe_3$ (M=Al, Ga) in toluene with 2-thiophenecarboxaldehyde-S-methyldithiocarbazat e under anaerobic conditions. These complexes have been characterized by $^1H\;NMR,\; ^{13}C\; NMR$, elemental analyses, and single-crystal X-ray diffraction. 2 crystallizes in the monoclinic space group $P2_1/c$ with unit cell parameters a=10.2930(5) Å, b=18.564 (1) Å, c=7.3812(6) Å, V=1347.9(2) Å3, $D_{calc}=1.342\; gcm^{-3}$ for Z=4, 9281 reflections with $I_o<3{\sigma}\;(I_o),$ R1=0.0500 and wR2=0.0526. 3 crystalizes in the orthorhombic space group $P_{bca}$ with unit cell parameters a=13.340(3) Å, b=19.9070(5) Å, c=11.3690(2) Å, $V=2673.88(9)\;{\AA}^3$, $D_{calc}=1.511\; gcm^{-3}$ for Z=8, 17004 reflections with $I_o>3{\sigma}\;(I_o),$, R1=0.0480 and wR2=0.0524. Compound 3 is a monomeric gallium compound with a weak interaction between the pendant thiophene and the gallium center.

Effects of Preparation Conditions of $Y_1Ba_2Cu_3O_{7-y}$ Sintered with $Bi_2O_3$ on Superconductiog Properties ($Bi_2O_3$를 첨가하여 소결한 $Y_1Ba_2Cu_3O_{7-y}$ 초전도체의 제조 조건이 초전도 특성에 미치는 영향)

  • Kim, Shi-Yul;Park, Sung;Im, Ho-Bin
    • Electrical & Electronic Materials
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    • v.3 no.2
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    • pp.90-98
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    • 1990
  • Y-Bi-Ba-Cu-O계 초전도체를 보통의 ceramic방법과 screen printing과 소결법으로 원판형과 후막형으로 제작하였다. B $i_{2}$ $O_{3}$를 첨가하여 소결한 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 초전도 성질은 전기저항측정과 자석위에 부상 유무로 조사하였다. 또한 B $i_{2}$ $O_{3}$를 첨가함에 따라 소결된 시편의 미세구조에 어떠한 영향을 주었는지 알아보았다. 전기저항 측정시 Yttrium 대신에 Bi로 부분적으로 치환한 경우인 $Y_{0.85}$B $i_{0.15}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 상온 저항치가 기본조성인 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$의 그것보다 향상된 미세구조로 인해 더 작은 값을 나타낸다. 반면 $Y_{1}$B $a_{2}$C $u_{3}$ $O_{7-y}$에다가 초과로 B $i_{2}$ $O_{3}$를 첨가한 경우 오히려 미세구조는 불량하고 상온저항치도 더 높다. 이러한 사실은 입계에 잔류하는 이차상은 전기적 성질에는 크게 영향을 주나 자기적 성질에는 거의 영향을 주지않는 것으로 보인다. 후막으로 Y-Bi-Ba-Cu-O를 제작시 기판에 의해 좌우되는데 단지 magnesia 기판에서 소결시 bulk시편과 유사한 성질을 나타냈다.질을 나타냈다.다.

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A STUDY OF ORAL STATUS OF MENTAL RETARDED CHILDREN (정신(精神) 박약아(薄弱兒)의 구강(口腔) 상태(狀態)에 관(關)한 고찰(考察))

  • Jhee, In-Ae
    • Journal of the korean academy of Pediatric Dentistry
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    • v.8 no.1
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    • pp.77-88
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    • 1981
  • The purpose of this study was to make a comprehensive study & evaluation of the oral status of mental retarded children. The auther examined intraorally 486 (male; 311, female;175) mental retarded children. The result was as follows; (General mental retarded children means the children who live in their parent's home, & orphan mental retarded children means the children who live in orphanage.) 1. The dft rate was 31.6% in general mental retarded children (G.m.r.c.) & 20.7% in orphan mental retarded children (O. m. r. c.). The dft index was 3.73 in G.m.r.c. & 2.15 in O.m.r.c. 2. The DMFT rate was 24.6% in female G.m.r.c., 16.7% in male G.m.r.c., 12.7% in female O.m.r.c., 8.4% in male O.m.r.c. The DMFT index was 4.94 in female G.m.r.c., 4.01 in male G.m.r.c., 1.40 in male O.m.r.c., 2.75 in female O.m.r.c. 3. The malocclusion prevalence was 57.3%. the class I malocclusion was 14.2% Class II malocclusion 19.3%, Class III malocclusion 23.5%. The children with Down's syndrome had 60.0% of class III malocclusion prevalence. 4. The dental calculus index was 1.97 in male O.m.r.c., 1.81 in female O.m.r.c., 1.30 in male G.m.r.e., 1.13 in female G.m.r.c. 5. The dental plaque index was 3.06 in female G.m.r.c., 3.00 in male Gm.r.e. 2.70 in male O.m.r,c., 2.32 in female O.m.r.c.

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Effect of particle size distribution on the magnetidc properties of hexagonal strontium ferrite (육방정 스트론튬 페라이트의 자기적 특성에 미치는 입도 분포의 영향)

  • 송창열;신용덕
    • Electrical & Electronic Materials
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    • v.8 no.3
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    • pp.324-331
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    • 1995
  • 0.36[wt%l $SiO_{2}$ and 0.1[wt%] $H_{3}$B $O_{3}$ were added to strontium ferrite magnets of the magnetoplumbite phase SrO.5.7F $e_{2}$ $O_{3}$ to hinder grain growth and accelerate sintering, respectively. This experiment was carried out to investigate effect of particle size distribution as a function of milling time(20, 30, 40, 50, 60, 70 hours) on the magnetic properties of SrO.5.7F $e_{2}$ $O_{3}$ ferrite magnet. The B-H curve, density and the degree of orientation were measured. And the microstructure of ferrite magnets was examined with a SEM. The optimal conditions and properties of the typical sample are the following : The milling time was 60 hours. Magnetic and physical properties are $B_{r}$=4, 000[G], $_{b}$ $H_{c}$=3, 330[Oe], (BH)max=3.786[MGOe], $_{I}$ $H_{c}$=3, 525[Oe], density=5.0063[g/c $m^{3}$] and orientation factor f=0.813.0.813.3.3.

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Electrical Properties of Pr-doped ZnO Varistors (Pr-첨가 ZnO 바리스터의 전기적 특성)

  • 곽민환;이상기;조성걸
    • Journal of the Korean Ceramic Society
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    • v.34 no.12
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    • pp.1275-1281
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    • 1997
  • ZnO varistors containing 5.0 at% Co3O4 and Pr6O11, ranging from 0.1 to 1.0 at%, were sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$. The I-V characteristics and nonlinear coefficients of the specimens were investigated with respect to Pr addition and sintering temperature. In general the specimens sintered at 130$0^{\circ}C$ showed better varistor characteristic than those fired at 135$0^{\circ}C$, which seemed to be related with the liquid phase formation during sintering. The barrier heights obtained from C-V relations, 0.29-1.36 eV, were different from those acquired using resistivity-temperature plots measured at low voltage per grain boundary. Therefore the estimation of potential barrier heights using C-V relations is better suited for the specimens prepared in this study. The carrier densities obtained using C-V relations were ~1018 cm-3.

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Electrical Conductivities of [(CeO2)1-x(ZrO2)x]0.8(SmO1.5)0.2 Solid Solution ([(CeO2)1-x(ZrO2)x]0.8(SmO1.5)0.2 고용체의 전기전도도)

  • 이충연;김영식;김남철
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.9
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    • pp.775-782
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    • 2003
  • In the study, the total conductivies in [(Ce $O_2$)$_{1-x}$ (Zr $O_2$)$_{x}$]$_{0.8}$(Sm $O_{1.5}$)$_{0.2}$ (x- 0, 0.05, 0.1, 0.2) solid solution were measured as a function of temperature and oxygen partial pressure between 80$0^{\circ}C$ and 1,00$0^{\circ}C$ using 4-probe d.c method. Under pure oxygen atmospere, the oxygen ionic conductivity of [(Ce $O_2$)$_{1-x}$ (Zr $O_2$)$_{x}$]$_{0.8}$(Sm $O_{1.5}$)$_{0.2}$ decreased with the concentration of Zr $O_2$At high oxygen partial pressure, the electrical conductivity is almost independent of oxygen partial pressure and decreased with the increase in Zr content. However, the electrical conductivity increase with decreasing oxygen partial pressure and is almost independent of Zr content at low oxygen partial pressure. Empirically, Total conductivity( $\sigma$ ) was expressed by the p$o_{2}$ -independent conductivity as $\sigma$$_{i}$, and the $p_{-1/4}$ $o_{2}$sup -dependent part as $\sigma$$_{e}$. Total, ionic and electronic conductivities fitted by data enabled to determine the transference number. The ionic transference number( $t_{i}$ ) decreased while the electronic transference( $t_{e}$ ) increase with the increase in Zr content and p$o_{2}$.

Chromatic Number Algorithm for Exam Scheduling Problem (시험 일정 계획 수립 문제에 관한 채색 수 알고리즘)

  • Lee, Sang-Un
    • Journal of the Korea Society of Computer and Information
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    • v.20 no.4
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    • pp.111-117
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    • 2015
  • The exam scheduling problem has been classified as nondeterministic polynomial time-complete (NP-complete) problem because of the polynomial time algorithm to obtain the exact solution has been unknown yet. Gu${\acute{e}}$ret et al. tries to obtain the solution using linear programming with $O(m^4)$ time complexity for this problem. On the other hand, this paper suggests chromatic number algorithm with O(m) time complexity. The proposed algorithm converts the original data to incompatibility matrix for modules and graph firstly. Then, this algorithm packs the minimum degree vertex (module) and not adjacent vertex to this vertex into the bin $B_i$ with color $C_i$ in order to exam within minimum time period and meet the incompatibility constraints. As a result of experiments, this algorithm reduces the $O(m^4)$ of linear programming to O(m) time complexity for exam scheduling problem, and gets the same solution with linear programming.

Dielectric and electric properties of sol-gel derived PZT thin Films (솔-젤법으로 제조한 PZT박막의 유전 및 전기적 특성)

  • Hong, Kwon;Kim, Byong-Ho
    • Electrical & Electronic Materials
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    • v.9 no.3
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    • pp.251-258
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    • 1996
  • Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

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The Formation of ConTiOn+2 Compounds in CoOx/TiO2 Catalysts and Their Activity for Low-Temperature CO Oxidation (CoOx/TiO2 촉매상에 ConTiOn+2 화합물의 생성과 저온 CO 산화반응에 대한 촉매활성)

  • Kim, Moon-Hyeon;Ham, Sung-Won
    • Journal of Environmental Science International
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    • v.17 no.8
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    • pp.933-941
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    • 2008
  • The formation of $Co_nTiO_{n+2}$ compounds, i.e., $CoTiO_3$ and $CO_2TiO_4$, in a 5wt% $CoO_x/TiO_2$ catalyst after calcination at different temperatures has been characterized via scanning electron microscopy (SEM), Raman and X-ray photoelectron spectroscopy (XPS) measurements to verify our earlier model associated with $CO_3O_4$ nanoparticles present in the catalyst, and laboratory-synthesized $Co_nTiO_{n+2}$ chemicals have been employed to directly measure their activity profiles for CO oxidation at $100^{\circ}C$. SEM measurements with the synthetic $CoTiO_3$ and $CO_2TiO_4$ gave the respective tetragonal and rhombohedral morphology structures, in good agreement with the earlier XRD results. Weak Raman peaks at 239, 267 and 336 $cm^{-1}$ appeared on 5wt% $CoO_x/TiO_2$ after calcination at $570^{\circ}C$ but not on the catalyst calcined at $450^{\circ}C$, and these peaks were observed for the $Co_nTiO_{n+2}$ compounds, particularly $CoTiO_3$. All samples of the two cobalt titanate possessed O ls XPS spectra comprised of strong peaks at $530.0{\pm}0.1$ eV with a shoulder at a 532.2-eV binding energy. The O ls structure at binding energies near 530.0 eV was shown for a sample of 5 wt% $CoO_x/TiO_2$, irrespective to calcination temperature. The noticeable difference between the catalyst calcined at 450 and $570^{\circ}C$ is the 532.2 eV shoulder which was indicative of the formation of the $Co_nTiO_{n+2}$ compounds in the catalyst. No long-life activity maintenance of the synthetic $Co_nTiO_{n+2}$ compounds for CO oxidation at $100^{\circ}C$ was a good vehicle to strongly sup port the reason why the supported $CoO_x$ catalyst after calcination at $570^{\circ}C$ had been practically inactive for the oxidation reaction in our previous study; consequently, the earlier proposed model for the $CO_3O_4$ nanoparticles existing with the catalyst following calcination at different temperatures is very consistent with the characterization results and activity measurements with the cobalt titanates.