• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.678-686
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• 2001

Origins for the transconductance dispersion and the gate leakage current in a GaAs metal semiconductor field effect transistor were found using capacitance deep-level transient spectroscopy (DLTS) measurements. In DLTS spectra, we observed two surface states with thermal activation energies of 0.65 $\times$ 0.07 eV and 0.88 $\times$ 0.04 eV and an electron trap EL2 with thermal activation energy of 0.84 $\times$ 0.01 eV. Transconductance was decreased in the frequency range of 5.5 Hz ~ 300 Hz. The transition frequency shifted to higher frequencies with the increase of temperature and the activation energy for the change of the transition frequency was determined to be 0.66 $\times$ 0.02 eV. From the measurements of the gate leakage current as a function of the device temperature, the forward and reverse currents are coincident with each other below gate voltages lower than 0.15 V, namely Ohmic behavior between gate and source/drain electrodes. The activation energy for the conductance of electrons on the surface of MESFET was 0.63 $\times$ 0.01 eV. Comparing activation energies obtained by different measurements, we found surface states H1 caused the transconductance dispersion and the fate leakage current.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.249-254
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• 1997

We investigated characteristics of Fe-doped semi-insulating InP by means of photoreflectance(PR) measurement. The band gap energy($E_0$) and broadening parameter($\Gamma$) from PR signals at 300K are 1.336 eV and 11.2 meV, respectively. As the temperature is decreased from 300 to 80 K, PR signals are varied from an overlapped shape of exciton and 2-dimensional band gap transitions(300 K) to that of exciton transition(80 K). We calculated Varshni coefficient($\alpha=0.94\pm$0.07 meV/K, $\beta=587\pm$35.2 K) and Bose-Einstein coefficient ($a_B=33.6{\pm}2.02meV$ , $\theta=165\pm$33K). After annealing of isothermal and isochronism crystallinity of InP is found to be excellent when annealed at $300^{\circ}C$ for 10~20 min, qualitatively.

• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.368-373
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• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.33-36
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• 1994

The characteristics of the nonvolatile MONOS memory devices as the nitride thickness is scaled down while maintaining constant tunneling oxide thickness and blocking oxide thickness have been investigated in order to obtain the 5V-programmable E$^2$PROM. We have found that 1V memory window for a 5V programming voltage and 10 year data retention can be achieved in the scaled MONOS memory devices with a 50 blocking oxide, a 57 nitride and a 19 tunneling oxide.

• Electrical & Electronic Materials
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• v.1 no.3
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• pp.269-277
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• 1988

P형 Si(100)로 제작한 MOS 커패시터에 $Co^{60}$-.gamma.선을 주사한 후 고주파 C-V특성 곡선으로 부터 방사선 조사에 의해 유발된 산화막안의 트랩전하의 거동 및 Si- $SiO_{2}$계면에서의 트랩밀도 분포의 변화를 검토하였다. 산화막 느랩전하는 .gamma.선 흡수선량 증가와 더불어 증가하다가 $10^{7}$ rad 부근에서부터 서서히 포화하는 경향이 나타났으며 게면트랩밀도의 분포모양은 흡수선량의 증가와 더불어 전형적인 이그러진 W자형에서 넓혀진 V자형 분포로 변화하였으나 최소값은 항상 진성페르미준위( $E_{i}$)부근에 있었으며 그 밀도는 1.0*$10^{11}$~7.5*$10^{11}$[개/$cm^{2}$/eV]로 계산되었다. 또한, 일정 바이어스전압하에서의 조사선량에 따른 $V_{fb}$ 의 변화는 현저하지는 않았으나 바이어스 전압을 +12V로 인가할 때 변화방향의 반전상태가 관측되었다. 그 이유로는 Si측의 계면 부근에서 일어난 눈사태 전자가 산화막내로 주입됨에 따라 도너형 양전하의 수가 감소되기 때문으로 추정되었다.되었다.

• Biomedical Science Letters
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• v.27 no.4
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• pp.283-290
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• 2021

Severe acute respiratory syndrome coronavirus (SARS-CoV2) is a major coronavirus that infects humans with human Coronavirus (HuCoV)-229E, HCoV-OC43, HCoV-HKU1, HCoV-NL63, Severe acute respiratory syndrome coronavirus (SARS-CoV) and Middle east respiratory syndrome coronavirus (MERS-CoV). SARS-CoV2 is currently a global pandemic pathogen. In this study, we developed conventional RT-PCR based diagnostic system for the detection of SARS-CoV2 which is relatively inexpensive but has high stability and a wide range of users. Three conventional RT-PCR primer sets capable of forming specific band sizes by targeting the ORF1ab [232 nucleotide (nt)], E (200 nt) and N (288 nt) genes of SARS-CoV2 were developed, respectively, and it were confirmed to be about 10~100 times higher detection sensitivity than the previously reported methods. In addition, a standard positive control that can generate specific amplicons by reacting with the developed RT-PCR primers and verify the false-positiv from contamination of the laboratory was produced. Therefore, the diagnostic system that uses the RT-PCR method is expected to be used to detect SARS-CoV2.

• Journal of the Korean Chemical Society
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• v.54 no.1
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• pp.120-124
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• 2010

$TiO_2$ and N-substituted $TiO_{2-x}N_x$ were synthesized by using precipitation method. $TiO_{2-x}N_x$ compound absorbed whole UV light as well as long wavelength of visible light (400 - 700 nm) because of the change of band gap from 3.2 eV to 1.77 eV. Results obtained revealed that $TiO_{2-x}N_x$ showed higher activity than pure $TiO_2$ or P-25 for visible-photocatalytic degradation of 1,4-dichlorobenzene.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.187-189
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• 1994

The degree of the photodoping process in Ag(100 )/a-$Se_{75}Ge_{25}$(2000 ) films has been measured as a funcition of photon energy between 1.5eV and 2.9eV with the exposing time. The window of Ag occurs at 3400 (3.65eV) and Ag is almost transparent in this region. It was shown that transmitance is always constant (40∼50%) for the wavelength ranges of our experiment. It was found that the energy gap of a unexposed a-$Se_{75}Ge_{25}$ film is 1.81eV. Ag photodoping process result in the photodarkenting effect which the absorption edge shift to the large wavelength. Especially, we could obtain very large band shut ( ∼0.3eV) resulting in exposing He-Ne laser(6328[ ]). From the result of our experimental, we suggest that Ag photodoping process depends on the photon absorption in Ag.

• Electrical & Electronic Materials
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• v.1 no.3
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• pp.261-268
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• 1988

본 논문에서는 두께 50[.mu.m]의 미연신 .alpha.형 폴리비닐덴 후로라이드 필름을 시료로 선정, .+-.4~.+-.6[kV]사이의 코로나대전 전압을 인가하여 얻은 코로나 일렉트렛트로 부터 온도 범위 -100[.deg.C]-100[.deg.C] 사이에서 열자격전류를 측정한 결과, 저온으로 부터 .delta., ..gamma., .betha. 및 .alpha.인 4개의 TSC 피크를 얻었다. 이들 피크의 기원을 정성적으로 고찰한 결과, .delta., .gamma.피크는 비정질 영역에서 카보닐기, 주쇄 및 극성기들에 의한 쌍극자의 탈분극으로 또 70[.deg.C]부근에서 관측된 .betha.피크는 비정질 영역 또는 비정질과 결정질의 경계면에서 전극으로 부터 공간전하의 탈트랩으로 그리고 180[.deg.C]근방에서 관측된 .alpha.피크는 결정영역에 깊이 트랩된 캐이어들의 탈트랩으로 각각 피크가 나타나는 것으로 사료된다. .delta., .gamma., .betha.및 .alpha.인 4개의 TSC 피크에 대하여 초기 상승법으로 얻은 활성화 에너지는 각각 0.54[eV], 0.24[eV], 0.99[eV] 및 1.26[eV]를 얻었다.