• Journal of the Korean Society for Heat Treatment
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• v.11 no.2
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• pp.111-120
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• 1998

The effects of chemical composition and thermal cycling on the martensitic transformation characteristics in Cu-rich, equiatomic and Zr-rich CuZr binary alloys have been studied by calorimetry. Only martensite could be indentified in equiatomic $Cu_{49.9}Zr_{50.1}$ alloy, while $Cu_{10}Zr_7$ and $CuZr_2$ intermetallic compounds as well as martensite were formed by rapid cooling from the melts in Cu-rich $Cu_{52.2}Zr_{47.5}$ alloy and Zr-rich $Cu_{48.4}Zr_{51.6}$ alloy, respectively. The $M_s$ temperature of $Cu_{49.9}Zr_{50.1}$ was $156^{\circ}C$ but those of $Cu_{52.5}Zr_{47.5}$ and $Cu_{48.4}Zr_{51.6}$ alloys, being $109^{\circ}C$ and $138^{\circ}C$, were lower than that of equiatomic $Cu_{49.9}Zr_{50.1}$ alloy. In all the alloys, the $M_s$ temperature has fallen but the $A_s$ temperature has risen, resulting in widening of the transformation hysteresis with thermal cycling. The anomalous characteristics in the transformation temperature are due to the presence of the intermetallic compounds i.e. $Cu_{10}Zr_7$ and $CuZr_2$ formed by an eutectoid reaction during thermal cycling in the temperature range between $-100^{\circ}C$ < $T_c$ < $400^{\circ}C$.

• Clean Technology
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• v.19 no.2
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• pp.128-133
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• 2013

Catalytic combustion of benzene over $CeO_2$-supported copper oxides has been investigated. The supported copper oxides catalysts were prepared using ball mill method and characterized by XRD, FT-IR, TEM and TPR. In the CuO/$CeO_2$ catalysts prepared using ball mill method, highly dispersed copper oxide species were shown at high loading ratio. The CuO/$CeO_2$ prepared using ball mill method showed the higher activity than those prepared using impregnation method. The catalytic activity increased with an increase in the CuO loading ratio, 10 wt% loaded CuO/$CeO_2$ catalyst giving the highest activity. In addition, the promoting of 10 wt% loaded CuO/$CeO_2$ catalyst with $Fe_2O_3$ and CoO enhanced the dispersion of CuO and then increased the catalytic activity.

• Journal of Soil and Groundwater Environment
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• v.22 no.5
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• pp.30-39
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• 2017

In this study, the predictive toxicity of barley Hordeum vulgare was estimated using a modified terrestrial biotic ligand model (TBLM) to account for the toxic effects of $CuOH^+$ and $CuCO_3(aq)$ generated at pH 7 or higher, and this was compared to that from the original TBLM. At pH values higher than 7, the difference in $EA_{50}\{Cu^{2+}\}$ (half maximal effective activity of $Cu^{2+}$) between the two models increased with increasing pH. As Mg concentration increased from 8.24 to 148 mg/L in the pH range of 5.5 to 8.5, the difference in $EA_{50}\{Cu^{2+}\}$ increased, and it reached its maximum at pH 8. The difference in $EC_{50}[Cu]_T$ (half maximal effective concentration of Cu) between the two models increased as dissolved organic carbon (DOC) concentration increased when pH was above 7. Thus, for soils with alkaline pH, the toxic effect of $CuOH^+$ and $CuCO_3(aq)$ are greater at higher salt and DOC concentrations. The acceptable Cu concentration in soil porewater can be estimated by the modified TBLM through deterministic method at pH levels higher than 7, while combination of TBLM and species sensitivity distribution through the probabilistic method could be utilized at pH levels lower than 7.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.167.2-167.2
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• 2015

고 이동도(~10 cm/Vs), 낮은 공정온도 및 높은 투과율 등의 특성을 갖는 산화물 반도체는 저 소비전력, 대면적화 및 고해상도 LCD Panel에 적합한 재료로서 현재 일부 Mobile Panel 및 TFT-LCD Panel의 양산에 적용되고 있으나, 향후 UHD급(4 K, 8 K)의 대형, 고해상도 Panel에의 적용을 위해서는 30 cm2/Vs 이상의 고 이동도 재료의 개발 및 저 저항 배선의 적용에 따른 소자 신뢰성의 개선이 필요하다. Cu는 대표적인 저 저항 배선 재료로 일부 양산에 적용되고 있으나, Cu 전극과 산화물 반도체의 계면에서 Cu원자의 확산 및 Cu-O 층의 형성에 의한 소자 특성 저하의 문제가 있다. 본 연구에서는 고 이동도의 In doped-ZTO계 산화물 반도체를 기반으로 채널 층과 Cu source-Drain layer의 계면에서의 Cu element의 거동 및 TFT 소자 특성과의 상관관계를 고찰하고, 계면에 형성된 Cu-O layer에 대해 높은 전자 친화도를 갖는 Ca element를 첨가에 의한 TFT 소자 특성의 변화를 관찰하였다. 본 연구에서는 이러한 효과로 인한 소자 신뢰성의 향상을 기대하였으며, 우선 In doped-ZTO 채널 층에 Cu와 CuCa 2at% source-drain을 적용한 TFT 특성을 확인하였다. 그 결과, Cu는 Field-effect mobility: ~17.67 cm2/Vs, Sub-threshold swing: 0.76 mV/decade 및 Vth:, 4.40 V의 결과가 얻어졌으며 CuCa 2at%의 경우 Field-effect mobility: ~17.84 cm2/Vs, Sub-threshold swing: 0.86 mV/decade 및 Vth:, 5.74 V의 결과가 얻어졌다. 소자신뢰성 측면에서도 Bias Stress의 변화량 ${\delta}Vth$의 경우 Cu : 4.48 V에 대해 CuCa 2at% : 2.81 V로 ${\delta}Vth$:1.67 V의 개선된 결과를 얻었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.63-69
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• 2007

We investigated interconnection processes using Cu vias for MEMS sensor packages. Ag paste layer was formed on a glass substrate and used as a seed layer for electrodeposition of Cu vias after bonding a Si substrate with through-via holes. With applying electrodeposition current densities of $20mA/cm^2\;and\;30mA/cm^2$ at direct current mode to the Ag paste seed-layer, Cu vias of $200{\mu}m$ diameter and $350{\mu}m$ depth were formed successfully without electrodeposition defects. Interconnection processes for MEMS sensor packages could be accomplished with Ti/Cu/Ti line formation, Au pad electrodeposition, Sn solder electrodeposition and reflow process on the Si substrate where Cu vias were formed by Cu electrodeposition into through-via holes.

• Journal of the Korean Society of Food Science and Nutrition
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• v.16 no.2
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• pp.63-68
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• 1987

The effects of various levels of copper(Cu) intake on the concentrations of copper, iron (Fe) and 3inc(Zn) in rat tissues were studied in growing rats. For different groups the drinking water was supplemented with 0(control), 25, 50, 100 and 200ppm Cu(as copper sulphate) for 1 day respectively. All animal groups were fed with the control diet (Cu contents, 12.8%mg/kg diet) during the experiment. At the end of the 4 week experiment, body weight gain was slightly lower in the Cu supply groups than in control group. Liver and serum Cu were significantly higher in 50, 100 and 200ppm Cu of male and in 200ppm Cu of female than in control groups. Spleen Cu was significantly increased by the supplementation of Cu. Liver and heart Fe of male and heart Fe of female were increased by incresing supplementary Cu levels. In 50ppm Cu group, liver, spleen and kidney Fe of female increased but the others did not. Fe of tissues was different in male and female rats according to Cu levels supplied. Serum Zn of male and female was significantly lower in 50, 100 and 200ppm Cu groups than in control and 25ppm Cu groups. When supplemented with Cu levels there were no significant differences among groups for liver, kidney, spleen and heart Zn as well as heart and kidney Cu.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.81-85
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• 2013

Wafer stacking technology becomes more important for the next generation IC technology. It requires new process development such as TSV, wafer bonding, and wafer thinning and also needs to resolve wafer warpage, power delivery, and thermo-mechanical reliability for high volume manufacturing. In this study, Cu CMP which is the key process for wafer bonding has been studied using Cu CMP and oxide CMP processes. Wafer samples were fabricated on 8" Si wafer using a damascene process. Cu dishing after Cu CMP and oxide CMP was $180{\AA}$ in average and the total height from wafer surface to bump surface was approximately $2000{\AA}$.

• Journal of Korea Foundry Society
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• v.39 no.6
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• pp.103-109
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• 2019

Cu-added SKD11 was manufactured through the casting process and the effects of Cu addition with different contents (0, 1, 2 and 3 wt%) and aging treatment on microstructure, mechanical characteristics such as tensile strength and hardness, and thermal conductivity were investigated. The microstructure was analyzed by FE-SEM and XRD, the mechanical characteristics by Rockwell hardness tester and Tensile tester, and the thermal conductivity by Laser flash. As a result, SKD11 containing Cu had higher hardness than as-received SKD11. The hardness of as-cast SKD11 containing 1 wt% Cu was 42.4 HRC, whereas the hardness of asreceived SKD11 cast alloy was 19.5 HRC, indicating that the hardness was greatly improved when Cu was added. In the case of tensile strength, Cu-added SKD11 cast alloy had lower tensile strength than as-received SKD11, and the tensile strength tended to increase as Cu content increased. After heat treatment, however, tensile strength of as-received SKD11 was significantly increased, whereas in the case of Cu-added SKD11, as the Cu contents increased, the tensile strength increased less and even reduced at 3 wt% Cu. The thermal conductivity of Cu-added SKD11 cast alloy was about 13 W m^-1 K^-1, which was lower than that of the asreceived SKD11 cast alloy (28 W m^-1 K^-1). After the heat treatment, however, the thermal conductivity of as-received SKD11 was reduced, while the thermal conductivity of the SKD11 added with Cu was increased. Thermal conductivity was generally larger with less Cu content, and this tendency became more pronounced after heat treatment.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.37-41
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• 2014

One of the important developments in next generation electronic devices is the technology for power delivery and heat dissipation. In this study, the Cu-to-Cu flip chip bonding process was evaluated using the square ABL power bumps and circular I/O bumps. The difference in bump height after Cu electroplating followed by CMP process was about $0.3{\sim}0.5{\mu}m$ and the bump height after Cu electroplating only was about $1.1{\sim}1.4{\mu}m$. Also, the height of ABL bumps was higher than I/O bumps. The degree of Cu bump planarization and Cu bump height uniformity within a die affected significantly on the misalignment and bonding quality of Cu-to-Cu flip chip bonding process. To utilize Cu-to-Cu flip chip bonding with ABL bumps, both bump planarization and within-die bump height control are required.