• Title/Summary/Keyword: $Cu(In,\

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A Study on Building a Holistic Model of the Corporate University : Focused on Its Roles (사내대학의 통합적 모델 수립에 관한 연구 : 사내대학 역할을 중심으로)

  • Park, Cho Hyun;Oh, Jeong Rok
    • Knowledge Management Research
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    • v.16 no.2
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    • pp.193-212
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    • 2015
  • A corporate university (CU) is an educational institution established by an organization whose primary purpose is not education. Traditionally, a CU is considered a training facility to improve organizational performance. However, the proliferation of the CU has engendered its diverse purposes, roles, and forms. This study attempts to identify three types of the existing CUs: (a) a CU to improve organizational performance; (b) a CU to satisfy employees' learning needs; and (c) a CU to develop a competent national workforce. Also, this study suggests a holistic CU model including the three CU types. In order to transform a CU to a multifunctional CU embracing all three types of CU, organizations should (a) provide communication and collaboration channels, (b) present clear organizational goals, (c) establish organizational policies/systems to encourage learning in CUs, and (d) devise an effective approach to evaluate the impact of CUs. Organization' s critical roles in the development of CUs can assist CUs in becoming the core of knowledge management.

Electrical Properties of Organic Photovoltaic Cell using CuPc (CuPc를 이용한 유기 광기전 소자의 전기적 특성)

  • Lee, Ho-Shik;Park, Yong-Pil
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2008.10a
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    • pp.612-614
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    • 2008
  • Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10nm to 50nm, we have obtained that the optimum CuPc layer thickness is around 40nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

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Ag and Cu Precipitation in Multi-Layer Chip Inductors Prepared with V2O5 Doped NiCuZn Ferrites (V2O5 도핑된 NiCuZn 페라이트로 제조된 칩인덕터에서의 Ag/cu 석출)

  • Je, Hae-June;Kim, Byung-Kook
    • Korean Journal of Materials Research
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    • v.13 no.8
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    • pp.503-508
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    • 2003
  • The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

Thermal Stability of the Interface between TaN Deposited by MOCVD and Electroless-plated Cu Film (MOCVD 방법으로 증착된 TaN와 무전해도금된 Cu박막 계면의 열적 안정성 연구)

  • 이은주;황응림;오재응;김정식
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.12
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    • pp.1091-1098
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    • 1998
  • Thermal stability of the electroless deposited Cu thin film was investigated. Cu/TaN/Si multilayer was fabricated by electroless-depositing Cu thin layer on TaN diffusion barrier layer which was deposited by MOCVD on the Si substrate, and was annealed in $H_2$ ambient to investigate the microstructure of Cu film with a post heat-treatment. Cu thin film with good adhesion was successfully deposited on the surface of the TaN film by electroless deposition with a proper activation treatment and solution control. Microstructural property of the electroless-deposited Cu layer was improved by a post-annealing in the reduced atmosphere of $H_2$ gas up to $600^{\circ}C$. Thermal stability of Cu/TaN/Si system was maintained up to $600^{\circ}C$ annealing temperature, but the intermediate compounds of Cu-Si were formed above $650^{\circ}C$ because Cu element passed through the TaN layer. On the other hand, thermal stability of the Cu/TaN/Si system in Ar ambient was maintained below $550^{\circ}C$ annealing temperature due to the minimal impurity of $O_2$ in Ar gas.

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Cu Thickness Effects on Bonding Characteristics in Cu-Cu Direct Bonds (Cu 두께에 따른 Cu-Cu 열 압착 웨이퍼 접합부의 접합 특성 평가)

  • Kim, Jae-Won;Jeong, Myeong-Hyeok;Carmak, Erkan;Kim, Bioh;Matthias, Thorsten;Lee, Hak-Joo;Hyun, Seung-Min;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.4
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    • pp.61-66
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    • 2010
  • Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.

Synthesis and Characteristics of CU/CUO Nanopowders by Pulsed Wire Evaporativn(PWE) Method (전기폭발법에 의한 CU/CUO 나노분말의 제조 및 분말특성)

  • Maeng, D.Y.;Rhee, C.K.;Lee, N.H.;Park, J.H.;Kim, W.W.;Lee, E.G.
    • Korean Journal of Materials Research
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    • v.12 no.12
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    • pp.941-946
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    • 2002
  • Both Cu and Cu-oxide nanopowders have great potential as conductive paste, solid lubricant, effective catalysts and super conducting materials because of their unique properties compared with those of commercial micro-sized ones. In this study, Cu and Cu-oxide nanopowders were prepared by Pulsed Wire Evaporation (PWE) method which has been very useful for producing nanometer-sized metal, alloy and ceramic powders. In this process, the metal wire is explosively converted into ultrafine particles under high electric pulse current (between $10^4$ and $10^{ 6}$ $A/mm^2$) within a micro second time. To prevent full oxidations of Cu powder, the surface of powder has been slightly passivated with thin CuO layer. X-ray diffraction analysis has shown that pure Cu nanopowders were obtained at $N_2$ atmosphere. As the oxygen partial pressure increased in $N_2$ atmosphere, the gradual phase transformation occurred from Cu to $Cu_2$O and finally CuO nanopowders. The spherical Cu nanopowders had a uniform size distribution of about 100nm in diameter. The Cu-oxide nanopowders were less than 70nm with sphere-like shape and their mean particle size was 54nm. Smaller size of Cu-oxide nanopowders compared with that of the Cu nanopowders results from the secondary explosion of Cu nanopowders at oxygen atmosphere. Thin passivated oxygen layer on the Cu surface has been proved by XPS and HRPD.

Interfacial Reactions of Sn-Ag-Cu solder on Ni-xCu alloy UBMs (Ni-xCu 합금 UBM과 Sn-Ag계 솔더 간의 계면 반응 연구)

  • Han Hun;Yu Jin;Lee Taek Yeong
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.84-87
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    • 2003
  • Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

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Study on the cold pressure welding by upsetting (업셋팅 을 이용한 냉간압접 에 대한 연구)

  • 안기원;김재도
    • Journal of Welding and Joining
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    • v.3 no.2
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    • pp.27-34
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    • 1985
  • The mechanical properties and bonding mechanism of aluminum, copper and mild steel have been determined in cold pressure welding. The brittle cover layer to be established by scratch-brushing plays an important role in bond strength and has an influence on the threshold of deformation. The cold pressure welding was achieved at 54% of height reduction in A1-A1, 75% in Cu-Cu, 56% in Al-Cu, and 74% in Cu-steel. The height reduction at which the bond strength of weld interface was the same as the tensile strength of base metal should be over 76% in Al-Al, 82% in Cu-Cu, and 78% in Al-Cu.

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The Effect of Fe and Cu on the Pb Toxicity in Rats (Pb 중독에 Fe, Cu가 흰쥐의 체내에 미치는 효과에 관한 연구)

  • 김애정
    • Journal of Nutrition and Health
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    • v.26 no.6
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    • pp.743-757
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    • 1993
  • This study was undertaken to investigate the effects of dietary Fe and Cu levels on Pb accumulation of Pb poisoned rats. 80 male Sprague weaning Dawley rate weighing 80-90g were divided into 8 groups(Pb groups: LFLCPb-low Fe, low Cu and Pb group, LFACPB-low Fe, adequate Cu and Pb group, AFLCPb-adequate Fe, low Cu and Pb group, AFACPb-adequate Fe, adequate Cu and Pb group, without Pb gorups: LFLC-low Fe, low Cu and without Pb grooup, LFAC-low Fe, adequate Cu and without Pb group, AFLC-adequate Fe, low Cu and without Pb group, AFAC-adequate Fe, adequate Cu and without Pb group) according to Pb administration (0, 500ppm in drinking water) and Fe and Cu levels(Fe :6ppm, 40ppm, Cu : 0.5ppm, 0.8ppm) for 12 weeks. The food intake, body weight, gain, and FER of Pb groups were significantly lower than those of without Pb groups(p<0.01, p<0.001, p<0.001). The weights of liver in Pb groups were significantly lower than that of adequate Fe and Cu group in without Pb group(AFAC) (p<0.001). The Cu contents of liver in Pb groups were significantly lower than that of AFAC (p<0.01). The liver Pb accumulation of LFLCPb was significantly higher than those of LFACPb, AFLCPb, AFACPb(p<0.05). The serum Pb content of LFLCPb was significantly higher than those of LFACPb, AFLCPb, AFACPb(p<0.05). The levels of Hb, and Hct, of 12 weeks in Pb poisoned rats were lower than those of 8 weeks, in other words, long term Pb poisoned rats were affected more serious on hematoopoiesis. The fecal excretions of Fe and Cu in Pb groups were significantly higher than those of without Pb groups(p<0.001, p<0.001). The urinary Fe and Cu excretions were significantly higher than those of AFAC(p<0.001, p<0.001). There were significant differences between Pb groups and without Pb groups according to dietary Fe and Cu levels. So, dietary levels of adequate Fe and Cu were effective to reduce Pb accumulation in rats. It were showed that the decrease of food intake, FER, body weight gain, serum level of Fe and Cu in Pb groups than those of without Pb groups. And the increase of liver Pb accumulation, serum Pb levels, fecal and urinary Fe and Cu excretions were showed in Pb groups than those of without Pb groups by long term lead poisoning. Otherwise, adequate Fe and Cu administrations in Pb groups have preventive effects on the Pb poisoned rats.

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A Study on the Corrosion of Cu-Ni Alloy in Chlorinated Seawater for Marine Applications (잔류 염소가 포함된 해수에서의 Cu-Ni 합금의 부식 거동 연구)

  • Jung, Geunsu;Yoon, Byoung Young;Lim, Chae Seon
    • Corrosion Science and Technology
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    • v.17 no.4
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    • pp.176-182
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    • 2018
  • Corrosion of the Cu alloy with 10wt% Ni in stagnant seawater with residual free chlorine was investigated. Despite that fact that Cu alloys are widely used for seawater applications due to their stubborn resistance to chloride attack, not much is known as to how the residual free chlorine in seawater affects corrosion of Cu and its alloys. In this work, immersion tests were conducted in the presence of different levels of chlorine for 90-10 Cu-Ni samples, one of the most frequently used Cu alloys for seawater application, mostly in shipbuilding. The results revealed no evidence for accelerated corrosion of the Cu-Ni alloy even in the presence of 5 ppm residual chlorine in seawater, signifying that the Cu-Ni alloy can be more tolerant to residual chlorine that has been commonly cited by the shipbuilding industry. However, comparison of polarization behavior of the alloy samples in the presence of different electrolytes with different concentrations of residual chlorine suggests that higher concentration of chlorine could increase the corrosion rate of the Cu-Ni alloy. Furthermore, it is suggested that microorganisms in the seawater could increase the corrosion rate of the Cu-Ni alloy by encouraging exfoliation of the corrosion product off the metal surface.