• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.249-252
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• 2014

The aim of this work is to investigate the effect of $Ca_xSr_{2-x}$ and activator on the structural and luminescent properties of green-emitting $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ nano phosphor. Using urea as fuel and ammonium nitrate as oxidizer, $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ has been successfully synthesized, using a combustion method. The particles were found to be small, spherical and of round surface. SEM imagery showed that the phosphors particles are of nanosize. The $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ emission spectrum for 360 nm excitation showed a single band, with a peak at 490 nm, which is a green emission. The highest luminous intensity was at $1,000^{\circ}C$, which was obtained when the $Eu^{2+}$ content (y) was 0.05. The results support the application of $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ phosphor as a fluorescent material for ultraviolet light-emitting diodes (UV-LEDs). Characteristics of the synthesized $Ca_xSr_{2-x}SiO_4:Eu^{2+}$ phosphor were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and photoluminescence (PL) detection.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.189-194
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• 1999

Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.41-45
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• 2012

Oxynitride green phosphors for white light emitting diodes (LEDs) were synthesized and their optical properties were evaluated. The N/O ratio ($\delta$) of $SrSi_2O_{2-{\delta}}N_{2+2/3{\delta}}:Eu^{2+}$ closely depended on the synthesizing conditions. The most excellent green emission (545 nm), which was assigned to the $5d{\rightarrow}4f$ transition of $Eu^{2+}$ ions, was achieved at the conditions of $1700^{\circ}C$, 5 mol% $Eu^{2+}$, and $H_2$ atmosphere. The well-developed $Ca-{\alpha}-SiAlON:Yb^{2+}$ particles with homogeneous size were obtained at m = 3 (n = 0.15) for the compound of $Ca_{0.5m-0.005}Yb_{0.005}Si_{12-(m+n)}Al_{m+n}O_nN_{16-n}$, resulting in the strong green emission at around 550 nm.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.147-151
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• 2007

An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.5
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• pp.795-801
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• 1994

The BiPbSrCaCuO superconductor was fabricated by diffusion of The dual layer composed of SrS12TCaS11TCuS12TOS1xT in upper layer and BiS12TPbSI0.3TCuS12TOS1yT in lower layer, and varified growh-mechanism of BiPbSrCaCuO superconducting phase. And, we produced optimum conditions of spread volume and each stage of sintering time were upper layer:Lower layer=1:0.2, 1:0.4, 1:0.6 and 24hr., 120hr., 210hr. From the result, the optimum conditions are spread volume(Upper layer:Lower layer=1:0.6), sintering time(210hrs.) at 820$^{\circ}C$.The BiPbSrCaCuO superconductor, fabricated optimum condition, showed zero resistance at critical temperature of 70k.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.626-633
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• 1998

For the fabrication of low temperature cofirable glass/ceramic with high dielectric constant, crystallizing glass [$SiO_2-TiO_2-RO (RO:BaO, CaO:SrO)$] was formed. The glass/ceramic composites were made by mixing this glass and alumina ceramic as filler, and its characteristics was investigated. With this glass compositon, it was possible to fabricate the glass which could be crystallized under $900^{\circ}C$. And it was found that the crystallizing temperature was changed in accordance with the composition of RO in glass. By adding $Bi_2O_3$ as flux, using $Al_2O_3$ as filler and sintering at $860^{\circ}C$, low temperature cofirable glass/ceramic with high dielectric constant was fabricated. The density of that composites was 3.96 g/$\textrm{cm}^3$, dielectric constant was 17 and Q. f was 600.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.9
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• pp.397-402
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• 2005

The ($Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode (Pt/TiN/SiO$_{2}$Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O$_{2}$ ratio were 140(W) and 80/20, respectively. Deposition rate of SCT thin film was about $18.75{\AA}$/min. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over $15[mol\%]$. The capacitance characteristics had a stable value within $\pm4[\%]$ in temperature ranges of $-80\~+90[^{\circ}C]$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.171-176
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• 2012

As langasite $A_3BC_3D_2O_{14}$ compounds with piezoelectric properties exhibit no phase transition up to the melting point of 1,400-$1,500^{\circ}C$, many high temperature applications are expected for the SAW filter, temperature sensor, pressure sensor, and so on, based on the digital transformation of wider bandwidth and higher-bit rates. It has a larger electromechanical coupling factor compared to quartz and also nearly the same temperature stability as quartz. The $La_3Ga_5SiO_{14}$ (LGS) crystal with the $Ca_3Ga_2Ge_4O_{14}$-type crystal structure was synthesized and the crystal structure was analyzed by Mill et al. It is also an important feature that the growth of the single crystal is easy. In the case of three-element compounds such as $[R_3]_A[Ga]_B[Ga_3]_C[GaSi]_DO_{14}$ (R=La, Pr and Nd), the piezoelectric constant increases with the ionic radius of R. In this study, crystal structures of four-element compounds such as $[A_3]_A[B]_B[Ga_3]_C[Si_2]_DO_{14}$ (A = Ca or Sr, B = Ta or Nb) are analyzed by a single crystal X-ray diffraction, and the mechanism and properties of the piezoelectricity depending on the species of cation was clarified based on the crystal structure.

• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.5-9
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• 2006

The SCT thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with Sr/Ca ratio. The maximum grain of thin films is obtained by ratio of Ca at 15 mol%. The dielectric constant was increased with increasing the ratio of Ca, while it was decreased if the ratio of Ca exceeded over 15 mol%. The dielectric constant changes almost linearly in temperature ranges of $-80{\sim}+90$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200 kHz. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the measuring temperature increases.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.11
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• pp.526-530
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The composition of SCT thin film deposited on Si substrate at room temperature is close to stoichiometry(1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by ammealing at $600^{\cric}C$. The temperature dependence of dielectric loss showed a value within 0.02 in temperature ranges of -80 ${\sim}$ +90$^{\circ}C$. The capacitance characteristics showed a stable value within ${\pm}$4%. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films was observed at the frequency above 200kHz.