• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.88-93
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• 2004

We, for the first time, present novel test patterns and conclusive on-chip data indicating that the variation of coupling capacitance, ${\Delta}C_C$ by crosstalk can be larger than static coupling capacitance, $C_C$. The test chip is fabricated using a generic 150 nm CMOS technology with 7 level metallization. It is also shown that ${\Delta}C_C$ is strongly dependent on the phase of aggressive lines. For antiphase crosstalk ${\Delta}C_C$ is always larger than $C_C$ while for in-phase crosstalk $D_{\Delta}C_C$is smaller than $C_C$.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2007년도 춘계학술발표회
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• pp.78.2-78.2
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• 2007

• 대한수학회논문집
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• 제13권4호
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• pp.759-764
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• 1998

We define the rational lens algebra (equation omitted)(n) as the crossed product by an action of Z on C( $S^{2n＋l}$). Assume the fibres are $M_{ k}$/(C). We prove that (equation omitted)(n) $M_{p}$ (C) is not isomorphic to C(Prim((equation omitted)(n))) $M_{kp}$ /(C) if k > 1, and that (equation omitted)(n) $M_{p{\infty}}$ is isomorphic to C(Prim((equation omitted)(n))) $M_{k}$ /(C) $M_{p{\infty}}$ if and only if the set of prime factors of k is a subset of the set of prime factors of p. It is moreover shown that if k > 1 then (equation omitted)(n) is not stably isomorphic to C(Prim(equation omitted)(n))) $M_{k}$ (c).

• Korean Journal of Mathematics
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• 제18권2호
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• pp.161-166
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• 2010

For an abelian extension K of ${\mathbb{Q}}$, let $C_W(K)$ be the group of Washington units of K, and $C_S(K)$ the group of Sinnott units of K. A lot of results about $C_S(K)$ have been found while very few is known about $C_W(K)$. This is mainly because elements in $C_S(K)$ are more explicitly defined than those in $C_W(K)$. The aim of this paper is to find a basis of $C_W(K)$ and use it to compare $C_W(K)$ and $C_S(K)$ when K is a subfield of ${\mathbb{Q}}({\zeta}_{p^e})$, where p is a prime.

• Applied Biological Chemistry
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• 제34권2호
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• pp.81-85
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• 1991

완두의 트리아실글리세롤의 조성을 구명하기 위하여 TLC로 트리아실글리세롤을 분리 한 후 HPLC를 이용하여 PN별로 분획하고 GLC로 분석 하였다. 이들 결과를 종합하여 트리아실글리세롤의 조성을 추정한 결과 건조된 완두의 트리아실글리세롤은 33종류였으며 주요 트리아실글리세롤은 $C_{16:0}C_{18:2}C_{18:2}(13.4%),\;C_{18:1}C_{18:2}C_{18:3}(9.3%),\;C_{18:1}C_{18:2}C_{18:2}(9.2%),\;C_{18:2}C_{18:2}C_{18:2}(8.1%),\;C_{18:2}C_{18:2}C_{18:3}(6.4%)$ 및 $C_{18:0}C_{18:1}C_{18:2}(5.4%)$이었다.

• 한국식품저장유통학회지
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• 제15권1호
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• pp.15-20
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• 2008

본 연구는 저온 유통 시스템을 구축하기 위해 이동식 저온 컨테이너에서 잠열재, 내부온도의 유지특성과 운영조건별 사과의 내부 품온을 살펴보았으며, 그 결과를 요약하면 축냉식 저온유통 체계에서 다목적용 농산물 유통에 적합하도록 $0{\sim}5^{\circ}C$, $5{\sim}10^{\circ}C$, $10{\sim}15^{\circ}C$ 3가지 온도대역별 잠열재를 개발하였다. $0{\sim}5^{\circ}C$ 잠열재$(K_1)$는 $C_{14}H_{30}$과 Sodium polyacrylate, $5{\sim}10^{\circ}C$ 잠열재$(K_2)$는 $C_{14}H_{30}$, $C_{18}H_{38}$, Sodium polyacrylate, $10{\sim}15^{\circ}C$ 잠열재$(K_3)$는 $C_{14}H_{30}$, $C_{18}H_{38}$, Sodium polyacrylate를 혼합하여 제조하여 잠열재로 사용한 결과 이동식 저온 컨테이너의 내부온도 유지특성은 $K_1$ 잠열재는 보냉 온도유지가 21시간 이상으로 유지되는 결과를 얻을 수 있었다. $K_2$의 경우 보냉 온도유지가 18시간 이상으로 유지되는 결과를 얻을 수 있었다. $K_3$의 경우 모든 잠열재에서 61시간 이상으로 $10{\sim}15^{\circ}C$ 내부온도 유지특성을 나타내었다. 사과 내부 품온 변화는 잠열재 온도 $0^{\circ}C$에서 고내온도 $5^{\circ}C$에 도달할 때까지의 이동식 저온 컨테이너에서 잠열재 보냉 유지시간은 $K_1$, $K_2$, $K_3$ 처리구에서 20시간 이상으로 유지되는 것으로 나타났으며, 사과의 내부 품온 변화는 자연대류 방식의 경우 5시간 후에 표면과 중심온도가 각각 $15^{\circ}C$, $16^{\circ}C$로 나타났으나 강제대류방식은 한 시간 후에 모든 측정지점에서 $7^{\circ}C$의 품온을 보였으며, 보냉 온도유지시간을 15시간 이상유지 하는 것으로 나타나 자연대류 방식의 이동식 저온 유통체계보다는 강제 대류식 유통체계가 우수한 깃으로 나타났다.

• 한국세라믹학회지
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• 제38권4호
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• pp.314-318
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• 2001

SiC-TiC composites have been fabricated by using a mechanochemical processing of a mixture of Si, Ti, and C at room temperature and subsequent hot pressing. TiC powders have been obtained by the mechanochemical processing of a mixture of Ti and C whereas SiC powders has not been obtained from a mixture of Si and C. By using the exothermic reaction between Ti and C, SiC-TiC powder could be obtained from the mixture of Si, Ti, and C using the mechanochemical processing for more than 12h. The X-ray diffraction analysis has shown that the powder subjected to the mechanochemical processing consisted of the particles having crystallite size below 10nm. Fully densified SiC-TiC composites have been obtained by hot-pressing of the powder at 1850$\^{C}$ for 3h and it has shown comparable mechanical properties to those of the SiC-TiC composites prepared from the commercially available SiC and TiC powders. Flexural strength of 560 MPa and fracture toughness of 4.8 MP$.$am$\_$1/2/ have been shown for the SiC-TiC composites with composition corresponding to 0.75:0.25:1 mole ratio of Si:Ti:C.

• 한국전기전자재료학회논문지
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• 제27권11호
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• pp.730-735
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• 2014

In this study, the temperature characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film which is degradated at the $120^{\circ}C{\sim}200^{\circ}C$ temperature range in the oven for 10 hours has been measured in through the applied frequency range of 0.1 kHz~4,800 kHz at temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Also, in the same conditions, the frequency characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film has been measured in through the applied temperature range of $30^{\circ}C{\sim}70^{\circ}C$ on setting frequency of 0.1 kHz, 1 kHz, 10 kHz, 100 kHz. The results of this study are as follows. When the frequency range of 0.1 kHz~4,800 kHz applied to the sample of Teflon film, the electrostatic capacity has been measured at the temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Through this measurement, it found that the electrostatic capacity decreased with increasing temperature. Regarding this result, may be it is because the electromagnetic coupling is degraded by thermal degradation. When the sample of Teflon film heated at $280^{\circ}C$ for 10 hours in oven, the dielectric loss has changed from unstable status to stabilizing status with increasing the degradation temperature in the $120^{\circ}C$, $160^{\circ}C$, $200^{\circ}C$ range. In this measurement, the two spectrums of dielectric loss appeared. It considers that this spectrum of dielectric loss appeared in 300 Hz is caused by the molecular motion of the C-F or OH group. Through this study, It found that the electrostatic capacity decreased with increasing frequency and temperature, and there is no change in dielectric loss, although the frequency increases.

• 정보처리학회지
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• 제17권6호
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• pp.58-66
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• 2010

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.250-250
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• 2008

This paper describes the resonant characteristics of polycrystalline SiC micro resonators. The $1{\mu}m$ thick polycrystalline 3C-SiC cantilevers with different lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at room temperature. For the 100 ~ $40{\mu}m$ long cantilevers, the fundamental frequency appeared at 147.2 kHz - 856.3 kHz. The $100{\mu}m$ and $80{\mu}m$ long cantilevers have second mode resonant frequency at 857.5 kHz and 1.14 MHz. Therefore, polycrystalline 3C-SiC micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.