• 혜화의학회지
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• 제9권2호
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• pp.269-276
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• 2001

In the literatual study about incurable case of C.V.A, the result were as follow: 1. The expressions of incurable C.V.A are sa(死), bulchi(不治), bulgabokchi(不可復治), hyung(凶), samang(死亡), danbulgu(斷不救), etc. 2. The symptoms of incurable C.V.A are balgiktomal(髮直吐沫),oudusangchan(搖頭上竄),augugijo(魚口氣粗),mokjingjiksi,ansohusungyuegue(眼小喉聲如鋸)myunjukyejang(面赤加粧), hanchulyueju(汗出如珠), sooneuimosang(循衣摸床), sinhonbuloe(神昏不語) dumyunsujokjogabchunghuk(頭面手足靑黑), dongjiguntong(動止筋痛), tohyulhayul(吐血下血), daetodaesa(大吐大瀉), gugaeanhab(口開眼合), suchul(手撤), bihan, yunyoe(遺尿) etc. 3. The pulse of incurable C.V.A is classified with maekgeubidaesakja(脈急而大數者) and maekgindaegeunjil(脈緊大急疾). 4. The symptoms of incurable C.V.A are classified into five viscerals and classify the differences between special symtom of each visceral and proenosis.

• 대한화학회지
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• 제14권4호
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• pp.321-326
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• 1970

The relation between the heating temperature and the V.C.P(Vacuum Condensing Point) at different degree of vacuum through the sublimatographic separation was studied where by ; (1) Anthracene and Anthraquinone, ${\alpha}$-Naphtol and ${\beta}$-Naphthol, o-Aminobenzoicacid and p-Aminobeenzoicacid were easily separated from each of its mixtures as shown in Figure9, 10 and 11, while tailings appeared appreciably. The results were in good agreement with those expected from the $t_k$-V.C.P curves in Figures 3,4,5,6,7 and 8. (2) The relation between the degree of vacuum and the V.C.P. of ${\alpha}$-Naphthol and Anthracene at different heating temperatures appeared as follows and are shown in Figures 12 and 13.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.800-806
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• 1997

The behavior of de levels in rapid thermal annealed Fe-doped semi-insulating InP(100) was studied by photoinduced current transient spectrocopy(PICTS). In bulk InP, T2(Ec-0.24 eV), T3(Ec-0.30 eV) and T5(Ec-0.62 eV) traps were observed. After annealing the T2 trap was annihilated at 20$0^{\circ}C$ and recreated at 35$0^{\circ}C$. T3 trap was not affected below 40$0^{\circ}C$. With increasing temperature the concentration of T5 trap reduced and it was annihilated at 30$0^{\circ}C$. However the T1(Ec-0.16 eV) and T4(Ec-0.42 eV) traps were began to appear at 40$0^{\circ}C$and these concentrations were increased with annealing temperature. The T1 and T4 traps seem to be related to the isolated phosphorus vacancy( $V_{p}$) and $V_{p}$-indium antisite( $V_{p}$- $P_{in}$ ) or $V_{p}$-indium interstitial( $V_{p}$-I $n_{I}$) respectiely.respectiely.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.274-274
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• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• 한국식품조리과학회지
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• 제12권1호
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• pp.6-12
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• 1996

Tryptic soy broth(TSB)와 광어, 굴 homogenate에 ethanol을 함유하지 않은 경우와 5%의 ethanol(v/v)을 함유한 경우에 ethanol이 V. parahaemolyticus의 증식과 생존에 미치는 영향을 이 세균의 최적온도(35$^{\circ}C$)와 저온(-20, 5$^{\circ}C$) 및 고온(45, 5$0^{\circ}C$)에서 검토하였다. 35$^{\circ}C$에서의 V parahaemolyticus의 증식은 TSB와 광어 homogenate에서 빨랐으나 굴 homogenate에서 약간 느렸다. 5%의 ethanol 존재하에서는 TSB와 광어 homogenate에서 긴 유도기를 거친 후에 증식이 시작되었으나 굴 homogenate에서는 저장초기부터 계속 생균수가 감소하였다. 5%의 ethanol을 함유한 것과 ethanol을 함유하지 않은 액체배지에 $10^{6}$-$10^{7}$ cells/ml의 V. parahaemolyticus를 접종하여 저온(5, -2$0^{\circ}C$)과 고온(45, 5$0^{\circ}C$)에 저장하면서 ethanol에 의한 생존억제 작용을 조사하였다. 5$^{\circ}C$에서 ethanol을 함유한 것과 ethanol을 함유하지 않은 액체배지에서 시료간의 생균수는 현저한 차이가 없었으나 -2$0^{\circ}C$에서는 5%의 ethanol 존재하에서 광어와 굴 homogenate에서 V. parahaemolyticus의 생존이 TSB에 비하여 현저히 억제되었다. 45$^{\circ}C$와 5$0^{\circ}C$에서 D-value는 ethanol을 함유하지 않은 경우와 5%의 ethanol을 함유한 경우 모두에서 굴 homogenate가 TSB와 광어 homogenate에 비하여 가장 낮은 값을 나타내었다. 45$^{\circ}C$와 5$0^{\circ}C$에서 ethanol을 함유하지 않은 각 액체배지에서의 D-value는 5%의 ethanol을 함유한 각각의 액체배지에서의 D-value보다 1.9-3.5배 높은 값을 나타내었다.

• 한국한의학연구원논문집
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• 제1권1호
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• pp.1-14
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• 1995

The clinical study was carried out on 1737 cases of inpatient and outpatient which have been diagnosed as C.V.A at hospital attached to 8 colleges of oriental medicine in Korea or National Medical Center from January 1st 1994 to December 31st 1994. The results were as follows; 1. In this study, the case of Occlusive C.V.D was 70.1%, Cerebral hemorrhage was 20.5%, Transient ischemic attack (T.I.A) was 5.3%, Subdural hemorrhage was 3.0%, Subarachnoid hemorrhage was 0.8% 2. It was confirmed by C.T (20%), E.K.G. (19%), X-ray (19%), Urinalysis (19%), Hematoscopy (20%). 3. The mean days of hospital treatment was 27.88 days, mean days of ambulation was 70.34 days. The mean days of hospital treatment of Occlusive C.V.D, Cerebral hemorrhage, T.I.A., Subdural hemorrhage, Subarachnoid hemorrhage were 25.79, 39.32, 12.49, 16.23, 23.40 days, respectively. The mean days of ambulation of Occlusive C.V.D, Cerbral hemorrhage, T.I.A., Subdural hemorrhage, Subarachnoid hemorrhage were 74.40, 93.68, 69.10, 29.75, 32.57 days, respectavely. 4. Oriental medical treatment of C.V.A was mainly Acupuncture (25%), Paper of Chinese herbs (22%), Chinese physiotherapy (14%), Extract of Chinese herbs (11%). 5. Oriental medical physiotherapy for C.V.A was mostly E.S.T., Kinesiatrics, electric negative therapy, others Aerohydrotherapy, interferential current therapy (I.C.T.), Carbon, Samhogi, T.E.N.S., Ultra-sound, Infra-red, Microwave, T.D.P., Ultraviolet, S.S.P., Chinese herbs beth, Prarffin bath, Magnetic treatment and tractions.

• 전기전자학회논문지
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• 제18권4호
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• pp.447-455
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• 2014

본 연구에서는 4H-SiC MOSFET의 주요 문제점인 $SiC/SiO_2$ 계면의 특성을 향상시키기 위해 PECVD (plasma enhanced chemical vapor deposition) 공정을 이용하여 n-based 4H-SiC MOS Capacitor를 제작하였다. 건식 산화 공정의 낮은 성장속도, 높은 계면포획 밀도와 $SiO_2$의 낮은 항복전계 등의 문제를 극복하기 위하여 PECVD와 NO어닐링 공정을 사용하여 MOS Capacitor를 제작하였다. 제작이 끝난 후, MOS Capacitor의 계면특성을 hi-lo C-V 측정, I-V 측정 및 SIMS를 이용해 측정하고 평가하였다. 계면의 특성을 건식 산화의 경우와 비교한 결과 20% 감소한 평탄대 전압 변화, 25% 감소한 $SiO_2$ 유효 전하 밀도, 8MV/cm의 증가한 $SiO_2$ 항복전계 및 1.57eV의 유효 에너지 장벽 높이, 전도대 아래로 0.375~0.495eV만큼 떨어져 있는 에너지 영역에서 69.05% 감소한 계면 포획 농도를 확인함으로써 향상된 계면 및 산화막 특성을 얻을 수 있었다.

• 전기학회논문지
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• 제56권7호
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• pp.1255-1260
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• 2007

[ $TiO_2-V_2O_5$ ] sol was prepared using sol-gel method. Sol changed to gel with hydrolysis and polymerization. DTA properties of gel powder had endothermic reaction due to evaporation of propanol about $80^{\circ}C$, had exothermic reaction due to combustion of propanol about $230^{\circ}C$ and had exothermic reaction due to combustion of alkyl group about $350^{\circ}C$. Crystalline properties of gel powder retained amorphous phase at $50^{\circ}C$, retained anatase phase from $400^{\circ}C\;to\;600^{\circ}C$ and had all rutile phase over $700^{\circ}C$ at 0.01mole $V_2O_5$ additive. The capacitance of thin films increased with increasing heat treatment temperature and thin films had best properties at $700^{\circ}C$. The capacitance of thin films increased a lot with decreasing measurement frequency.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.