• 제목/요약/키워드: $CH_4$ addition

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MWPCVD에 의해 합성된 다이아몬드 박막 특성에 대한 증착조건의 영향 (Effect of deposition condition on the properties of diamond thin films synthesized by MWPCVD)

  • 이병수;신태현;육재호;조기선;유도현;박상현;이능헌;이덕출
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1696-1698
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    • 1999
  • The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including $CH_4$ conentrations, Oxygen additions, Operating pressure, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the $CH_4-H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure, the growth rate and crystallinity were increased simultaneously.

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마이크로웨이브 화학기상성장법을 이용한 다이아몬드 박막의 합성에 관한 연구 (A Study on the Diamond thin film synthesized by Microwave Plasma Enhanced Chemical Vapor Deposition)

  • 이병수;이상희;박상현;박구범;박종관;조기선;유도현;이덕출
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 D
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    • pp.1490-1492
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    • 1998
  • The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including $CH_4$ conentrations, Oxygen additions, Operating pressure, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the $CH_4-H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure, the growth rate and crystallinity were increased simultaneously.

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Microwave Plasma CVD에 의한 Diamond 박막의 합성에 관한연구 (A Study on the Diamond thin firms Synthesized by Microwave Plasma Enhanced Chemical Vapor Deposition)

  • 이병수;이상희;이덕출;박상현;박구범;박종관;유도현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.289-292
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    • 1998
  • The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including CH$_4$ concentrations, Oxygen additions, Operating pressure, deposition time, etc. on the growth rate and crystallinity were investigated. The best crystallinity of the finn at 3% methane concentration addition of oxygen to the CH$_4$-$H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure and time, the growth rate and crystallinity were increased simultaneously.

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Anion Recognition by a Simple Colorimetric Benzthiazole-Based Receptor

  • Kang, Sung-Ok;Nguyen, Quynh Pham Bao;Kim, Taek-Hyeon
    • Bulletin of the Korean Chemical Society
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    • 제30권11호
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    • pp.2735-2738
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    • 2009
  • A simple colorimetric anion chemosensor based on 2-amino-6-nitrobenzothiazole was synthesized. The addition of tetrabutylammonium (TBA) salts of $F^-,\;{CH_3COO}^-,\;and\;{H_2PO_4}^-$ to the solution of receptor 3 caused dramatic and clearly observable color changes from light to dark yellow due to the deprotonation process which is totally different from previously reported receptors based on the same motif. According to the basicity of the anions, the sensitivity of receptor 3 towards various anions decreased in the following order: ${CH_3COO}^-\;>\;F^-\;>\;{H_2PO_4}^-$.

New Transition Metal Mediated Alkylation Reaction of arachno-$S_{2}B_{7}H_{8}$, Insertion Reaction of arachno-$S_{2}B_{7}H_{8}^{-}$ with $(CO)_{5}M$ {${C(R_{1})(R_{2})}$} $(M=Cr,\;W;\;R_{1}=CH_{3},\;C_{6}H_{5};\;R_{2}=OCH_{3},\;SC_{6}H{5})$: Synthesis and Characterization of arachno-$4-RCH_{2}-6,8-S_{2}B_{7}H_{8}\;(R=CH_{3},\;IIa;\;C_{6}H_{5},\;IIb)$

  • Hee-Joo Jeon;Jae-Jung Ko;Kang-bong Lee;Sang Ook Kang
    • Bulletin of the Korean Chemical Society
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    • 제14권1호
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    • pp.113-117
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    • 1993
  • Good yield synthetic routes for the production of new B-alkyl-dithiaborane clusters are reported. The syntheses of the B-alkyl-dithiaboranes are based on the use of Fischer-type carbene reagents to activate the B-H bonds of dithiaborane for alkyl-addition reactions and are the first examples of transition-mediated reactions of dithiaborane to be reported. Thus, reactions employing arachno-$S_2B_7H_8$- and $(CO)_5M{C(R_1)R_2}$ (M = Cr, W; $R_1 = CH_3,\;C_6H_5;\; R_2 = OCH_3,\;SC_6H_5)$ were found to yield the intermidiate anions I, $[(CO)_5M{C(R_1)R_2S_2B_7H_8}]^-$, which upon protonation gave the corresponding neutral, air-sensitive cluster arachno-4-$RCH_2-6,8-S_2B_7H_8(R=CH_3,\;IIa;\;C_6H_5,\;IIb)$ range from 30 to 35% yield. Complexes IIa and IIb are isoelectronic with arachno-6,8-$S_2B_7H_9$ and, on the basis of the spectroscopic data, are proposed to adopt a similar arachno cage geometry in which an $RCH_2$ units are substituted to 4 position boron atom of the arachno-6,8-$S_2B_7H_9$.

DRY ETCHING CHARACTERISTICS OF INGAN USING INDUCTIVELY COUPLED $Cl_2/CHF_3,{\;}Cl_2/CH_4$ AND Cl_2/Ar PLASMAS.

  • Lee, D.H.;Kim, H.S.;G.Y. Yeom;Lee, J.W.;Kim, T.I.
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 1999년도 추계학술발표회 초록집
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    • pp.59-59
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    • 1999
  • In this study, planer inductively coupled $Cl_2$ based plasmas were used to etch InGaN and the effects of plasma conditions on the InGaN etch properties have been characterized using quadrupole mass spectrometry(QMS) and optical emission spectroscopy(OES). As process conditions used to study the effects of plasma characteristics on the InGaN etch properties, $Cl_2$ was used as the main etch gas and $CHF_3,{\;}CH_4$, and Ar were used as additive gases. Operational pressure was varied from SmTorr to 3OmTorr, inductive power and bias voltage were varied from 400W to 800W and -50V to -250V, respectively while the substrate temperature was fixed at 50 centigrade. For the $Cl_2$ plasmas, selective etching of GaN to InGaN was obtained regardless of plasma conditions. The small addition of $CHF_3$ or Ar to $Cl_2$ and the decrease of pressure generally increased InGaN etch rates. The selective etching of InGaN to GaN could be obtained by the reduction of pressure to l5mTorr in $CI_2/IO%CHF_3{\;}or{\;}CI_2/IO%Ar$ plasma. The enhancement of InGaN etch rates was related to the ion bombardment for $CI_2/Ar$ plasmas and the formation of $CH_x$ radicals for $CI_2/CHF_3(CH_4)$ plasmas.

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IgA Isotype Switching 연구를 위한 마우스 B Lymphoma Cell (CH12F3-2A)의 특성 연구 (Characterization of Mouse B Lymphoma Cells (CH12F3-2A) for the Study of IgA Isotype Switching)

  • 장영생;최서현;박석래;김현아;박재봉;김평현
    • IMMUNE NETWORK
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    • 제4권4호
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    • pp.216-223
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    • 2004
  • Background: It is well known that IgA isotype switching is induced by $TGF-{\beta}1$. LPS-activated mouse normal B cells well differentiate into IgA secreting plasma cells under the influence of $TGF-{\beta}1$. Nevertheless, there are lots of difficulties in studying normal B cells in detail because it is not simple to obtain highly purified B cells, showing low reproducibility and transfection efficacy, moreover impossible to keep continuous culture. To overcome these obstacles, it is desperately needed to develop B cell line which acts like normal B cells. In the present study, we investigated whether CH12F3-2A lymphoma cells are appropriate for studying IgA isotype switching event. Methods: CH12F3-2A B cell line was treated with LPS and $TGF-{\beta}1$, then levels of germ-line (GL) transcripts were measured by RT-PCR, and $GL{\alpha}$ promoter activity was measured by luciferase assay. In addition, membrane IgA (mIgA) expression and IgA secretion were determined by FACS and ELISA, respectively. Results: $TGF-{\beta}1$, regardless of the presence of LPS, increased level of $GL{\alpha}$ transcripts but not $GL{\gamma}2b$ transcripts. However, IgA secretion was increased dramatically by co-stimulation of LPS and $TGF-{\beta}1$. Both mIgA and IgA secretion in the presence of $TGF-{\beta}1$ were further increased by over-expression of Smad3/4. Finally, $GL{\alpha}$ promoter activity was increased by $TGF-{\beta}1$. Conclusion: CH12F3-2A cell line acts quite similarly to the normal B cells which have been previously reported regarding IgA expression. Thus, CH12F3-2A lymphoma cell line appears to be adequate for the investigation of the mechanism(s) of IgA isotype switching at the cellular and molecular levels.

ATO 처리후, 플라즈마 전해 산화 처리된 Ti-6Al-4V 합금의 표면 형태 (Surface Morphology of PEO-treated Ti-6Al-4V Alloy after Anodic Titanium Oxide Treatment)

  • Kim, Seung-Pyo;Choe, Han-Cheol
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.75-75
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    • 2018
  • Commercially pure titanium (CP-Ti) and Ti-6Al-4V alloys have been widely used in implant materials such as dental and orthopedic implants due to their corrosion resistance, biocompatibility, and good mechanical properties. However, surface modification of titanium and titanium alloys is necessary to improve osseointegration between implant surface and bone. Especially, when titanium oxide nanotubes are formed on the surface of titanium alloy, cell adhesion is greatly improved. In addition, plasma electrolytic oxide (PEO) coatings have a good safety for osseointegration and can easily and quickly form coatings of uniform thickness with various pore sizes. Recently, the effects of bone element such as magnesium, zinc, strontium, silicon, and manganese for bone regeneration are researching in dental implant field. The purpose of this study was researched on the surface morphology of PEO-treated Ti-6Al-4V alloy after anodic titanium oxide treatmentusing various instruments. Ti-6Al-4V ELI disks were used as specimens for nanotube formation and PEO-treatment. The solution for the nanotube formation experiment was 1 M $H_3PO_4$ + 0.8 wt. % NaF electrolyte was used. The applied potential was 30V for 1 hours. The PEO treatment was performed after removing the nanotubes by ultrasonics for 10 minutes. The PEO treatment after removal of the nanotubes was carried out in the $Ca(CH_3)_2{\cdot}H_2O+(CH_3COO)_2Mg{\cdot}4H_2O+Mn(CH_3COO)_2{\cdot}4H_2O+Zn(CH_3CO_2)_2Zn{\cdot}2H_2O+Sr(CH_2COO)_2{\cdot}0.5H_2O+C_3H_7CaO_6P$ and $Na_2SiO_3{\cdot}9H_2O$ electrolytes. And the PEO-treatment time and potential were 3 minutes at 280V. The morphology changes of the coatings on Ti-6Al-4V alloy surface were observed using FE-SEM, EDS, XRD, AFM, and scratch tester. The morphology of PEO-treated surface in 5 ion coating solution after nanotube removal showed formation or nano-sized mesh and micro-sized pores.

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방전플라스마에 의한 NOx, SOx 분해시 메탄첨가의 영향 (Effect of CH4 Addition in Case of Decomposition of NOx, SOx by Discharge Plasma)

  • 강현춘;우인성;강안수
    • 한국안전학회지
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    • 제15권2호
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    • pp.70-77
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    • 2000
  • For hazardous air pollutants(HAP) such as NO, $NO_2$ and $SO_2$ decomposition efficiency, power consumption, and applied voltage were investigated by SPCP(Surface induced discharge Plasma Chemical Processing) reactor to obtain optimum process variables and maximum decomposition efficiencies. Decomposition efficiency of HAP with various electric frequencies(5~50 kHz), flow rates(100~1,000 mL/min), initial concentrations(100~1,000 ppm) and additive($CH_4$) were measured and the products were analyzed with FT-IR. Experimental results showed that for the frequency of 10 kHz, the highest decomposition efficiency of 94.3 % for NO, 84.7 % for $NO_2$ and 99 % far $SO_2$ were observed at the power consumptions of 19.8, 20 and 19W, respectively, and that decomposition efficiency decreased with increasing frequency above 20 kHz. And decomposition efficiency per unit power were 5.21 %/W for $SO_2$, 4.76 %/W for NO and 4.24 %/W for $NO_2$ and the highest decomposition efficiency was observed with $SO_2$. Decomposition efficiency was increased with increasing residence times and with decreasing initial concentration of pollutants. When the additive of $CH_4$ was used, decomposition efficiency was increased with increasing $CH_4$ content, and NO, $NO_2$ and $SO_2$ were almost completely decomposed with the efficiency of 99 %, 98 % and 99 %, respectively and therefore $CH_4$ was a good additive material. The optimum power for the maximum decomposition efficiency were 7.5 W for $SO_2$, 9.5 W for NO and 15.5 W for $NO_2$, respectively. Optimum power with the maximum decomposition efficiency were 9.5 W at 1,000 ppm of NO, 7~8 W at 100~500 ppm of NO and 15.5 W at all concentration range of $NO_2$ and 11.5 W at 1,000 ppm, 4.9 W at 500 ppm, 3.7 W at 100~300 ppm of $SO_2$ and power efficiency was best in these case.

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알칸의 탈수소화반응에서의 촉매독 화합물의 분자구조 (Molecular Structure of PCP Pincer Complexes: Poisoning Catalyst on the Dehydrogenation of Alkanes)

  • 이지현;전상진;권기혁;이도원
    • 한국결정학회지
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    • 제16권1호
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    • pp.43-53
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    • 2005
  • 알칸화합물(alkanes)에서 탄소-수소결합을 활성화시켜서 더욱 값이 비싸고 더 유용한 알켄화합물(alkenes)로 만들 수 있는 촉매를 만들고자 지난 수 십 년간 많은 화학자들이 연구해왔다 이러한 목적의 하나로서 두개의 수소를 가지는 이리디움 P-C-P핀서(pincer) 착물 $(IrH_2{C_6H_3-2,6-(CH_2PBu_2^t)_2})$을 성공적으로 합성하였다. 이 착물은 알칸의 탈수소화반응(dehyrogenation)에 아주 효과적인 촉매로 알려졌다 알칸의 탈수소화반응에 촉매독으로 작용하는 질소, 물, 이산화탄소 및 일산화탄소와 같은 작은 화합물들과 직접 반응시켜서 어떻게 촉매독으로 작용하는지를 알아봤다. 촉매독으로 작용할 수 있는 화합물들을 합성하여 핵자기공명분광법(NMR)과 적외선분광법(IR)으로 확인하였고 분자구조를 알아보기 위해서 단결정X-ray 회절법을 통하여 확인하였다. 본 논문에서는 촉매 및 촉매독물질의 합성과 분자구조와 각각의 화합물의 반응성과 특이성을 알아보았다.