A Study on the Diamond thin firms Synthesized by Microwave Plasma Enhanced Chemical Vapor Deposition

Microwave Plasma CVD에 의한 Diamond 박막의 합성에 관한연구

  • 이병수 (인하대학교 공대 전기공학과) ;
  • 이상희 (인하대학교 공대 전기공학과) ;
  • 이덕출 (인하대학교 공대 전기공학과) ;
  • 박상현 (경남대학교 공대 전기공학과) ;
  • 박구범 (유한대학 전기과) ;
  • 박종관 (유한대학 정보통신과) ;
  • 유도현 (인하대학교 공대 전기공학과)
  • Published : 1998.06.01

Abstract

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including CH$_4$ concentrations, Oxygen additions, Operating pressure, deposition time, etc. on the growth rate and crystallinity were investigated. The best crystallinity of the finn at 3% methane concentration addition of oxygen to the CH$_4$-$H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure and time, the growth rate and crystallinity were increased simultaneously.

Keywords