• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.570-575
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• 2002

$SrBi_2Ta_2O_9$ thin films were etched in $Cl_2/CF_4/Ar$ inductively coupled plasma (ICP). The maximum etch rate was 1300 ${\AA}/min$ at 900 W ICP power in Cl$_2$(20%)/$CF_4$(20%)/Ar(60%). As RF source power increased, radicals (F, Cl) and ion ($Ar^+$) increased. The influence of plasma induced damage during etching process was investigated in terms of P-E hysteresis loops, chemical states on the surface, surface morphology and phase of X-ray diffraction. The chemical states on the etched surface were investigated with X-ray spectroscopy and secondary ion mass spectrometry. After annealing $700^{\circ}C$ for 1 h in $O_2$ atmosphere, the decreased P-E hysteresises of the etched SBT thin films in Ar and $Cl_2/CF_4/Ar$ plasma were recovered.

• 정보처리학회논문지C
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• 제12C권3호
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• pp.387-394
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• 2005

IEEE 802.11e를 포함한 IEEE 802.11x의 모든 매체접속제어 부계층은 형태는 다르지만 공통적으로 CP(Contention Period)와 CFP(Contention Free Period) 서비스 기능을 정의하고 있다. 본 논문에서는 현재 여러IEEE 802.11x PCF나 IEEE 802.11e HCCA 상에서 서비스되고 있는 기존 라운드로빈 방식의 폴링 기법을 수정하여 트래픽의 부하가 큰 채널을 선택하여 가중치를 주어 서비스할 수 있는 New-CF 방식을 제안하였다. NS-2로 기존 기법과의 비교를 수행한 시뮬레이션 결과 전체적인 통과율이 상승한 것을 검증하였다.

• Journal of information and communication convergence engineering
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• 제5권3호
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• pp.215-218
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• 2007

In this paper, amorphous semiconductor and insulator thin film are etched using reactive ion etcher. At that time, we experiment in various RIE conditions (chamber pressure, gas flow rate, rf power, temperature) that have effects on quality of thin film. The using gases are $CF_4,\;CF_4+O_2,\;CCl_2F_2,\;CHF_3$ gases. The etching of a-Si:H thin film use $CF_4,\;CF_4+O_2$ gases and the etching of $a-SiO_2,\;a-SiN_x$ thin film use $CCl_2F_2,\;CHF_3$ gases. The $CCl_2F_2$ gas is particularly excellent because the selectivity of between a-Si:H thin film and $a-SiN_x$ thin film is 6:1. We made precise condition on dry etching with uniformity of 5%. If this dry etching condition is used, that process can acquire high yield and can cut down process cost.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.62-65
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• 2001

$SrBi_2Ta_2O_{9}$ thin films were etched in inductively coupled $Cl_{2}$/$CF_{4}$/Ar plasma. The maximum etch rate was 1060 $\AA\textrm{m}$/min in $Cl_{2}$/$CF_{4}$/Ar (80). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy. The etching of SBT thin films in $Cl_{2}$/$CF_{4}$/Ar were etched by chemically assisted reactive ion etching. The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase Cl radical.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.393-397
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• 2002

Polyimide (PI) films have been studied widely as the interlayer dielectric materials due to a low dielectric constant, low water absorption, high gap-fill and planarization capability. The polyimide film was etched using inductively coupled plasma system. The etcying characteristics such as etch rate and selectivity were evaluated at different $CF_4/(CF_4+O_2)$chemistry. The maximum etch rate was 8300 ${\AA}/min$ and the selectivity of polyimide to SiO$_2$was 5.9 at $CF_4/(CF_4+O_2)$ of 0.2. Etch profile of polyimide film with an aluminum pattern was measured by a scanning electron microscopy. The vertical profile was approximately $90^{\circ}$ at $CF_4/(CF_4+O_2)$ of 0.2. As 20% $CF_4$ were added into $O_2$ plasma from the results of the optical emission spectroscopy, the radical densities of fluorine and oxygen increased with increasing $CF_4$ concentration in $CF_4/O_2$ from 0 to 20%, resulting in the increased etch rate. The surface reaction of etched PI films was investigated using x-ray photoelectron spectroscopy.

• Bulletin of the Korean Chemical Society
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• 제23권8호
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• pp.1106-1109
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• 2002

Studies on subtle spacer ligand effects of AgCF3SO3 with 3,3'-Py2X (X = O vs S) have been carried out. The reaction of AgCF3SO3 with 3,3'-Py2O and 3,3'-Py2S produces [Ag(CF3SO3)(3,3'-Py2O)] and [Ag(3,3'-Py2S)] (CF3SO3), respectively. Crystallographic characterization of [Ag(CF3SO3)(3,3'-Py2O)] (monoclinic P1, a =8.405(2) $\AA$, b = 10.714(2) $\AA$, c = 18.031(2) $\AA$, $\alpha=$ 77.36(2), $\beta=107.83(2)^{\circ}$, $\gamma=$ 66.92(2), V = 1438.0(5) $\AA3$ , Z =2,R = 0.0486) reveals that the skeletal structure is an anion-bridged double-strand. The double-strands are packed like a plywood. The framework of [Ag(3,3'-Py2S)](CF3SO3) (orthorhombic Pcab, a = 17.330(2) $\AA$, b = 8.640(1) $\AA$, c = 19.933(6) $\AA$, V = 2985(1) $\AA3$ , Z =8, R = 0.0437) is a sinusoidal single-strand. The formation of each coordination polymer appears to be primarily associated with the donating ability and the confor ma-tional energy barrier of the spacer ligands. Thermal analyses indicate that [Ag(CF3SO3)(3,3'-Py2O)] and [Ag(3,3'-Py2S)](CF3SO3) are stable up to 250 $^{\circ}C$ and 210 $^{\circ}C$, respectively. For the anion exchangeability, the nature of the spacer ligand is more significant factor than the distance of silver(Ⅰ)···triflate.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.314-318
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• 2002

The etching behaviors of the ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). The maximum etch rate of $YMnO_3$ thin film is 300 ${\AA}/min$ at Ar/$Cl_2$of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, nonvolatile $YF_x$ compounds were found on the surface of $YMnO_3$ thin film which is etched in Ar/$Cl_2$/CF$_4$plasma. The etch profile of YMnO$_3$film is improved by addition of $CF_4$ gas into the Ar/$Cl_2$ plasma. These results suggest that YF$_{x}$ compound acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.

• 한국환경과학회지
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• 제22권9호
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• pp.1097-1103
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• 2013

Tetrafluoromethane($CF_4$) have been widely used as etching and chemical vapor deposition gases for semiconductor manufacturing processes. $CF_4$ decomposition efficiency using microwave system was carried out as a function of the microwave power, the reaction temperature, and the quantity of $Al_2O_3$ addition. High reaction temperature and addition of $Al_2O_3$ increased the $CF_4$ removal efficiencies and the $CO_2/CF_4$ ratio. When the SA30 (SiC+30wt%$Al_2O_3$) and SA50 (SiC+50wt%$Al_2O_3$) were used, complete $CF_4$ removal was achieved at $1000^{\circ}C$. The $CF_4$ was reacted with $Al_2O_3$ and by-products such as $CO_2/CF_4$ and $AlF_3$ were produced. Significant amount of by-product such as $AlF_3$ was identified by X-ray powder diffraction analysis. It also showed that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ after microwave thermal reaction.

• 한국광물학회지
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• 제21권3호
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• pp.307-312
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• 2008

리트벨트 분석법과 저온에서 측정한 방사광 가속기 분말회절 자료를 이용하여 CFC-13 ($CF_{3}Cl;$ chlorotrifluoromethane) 분자체가 흡착된 제올라이트 Na,K-LSX (low-silica X or synthetic faujasite)의 구조분석을 수행하였으며, supercage 내의 6-ring주변에 CFC-13 분자체의 불소 원자와 LSX 제올라이트의 나트륨 양이온 간의 결합이 일어남을 확인하였다.

• BMB Reports
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• 제37권6호
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• pp.700-708
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• 2004

The genes located within the p74 gene region of the Choristoneura fumiferana granulovirus (ChfuGV) were identified by sequencing an 8.9 kb BamHI restriction fragment on the ChfuGV genome. The global guanine-cytosine (GC) content of this region of the genome was 33.02%. This paper presents the ORFs within the p74 gene region along with their transcriptional orientations. This region contains a total of 15 open reading frames (ORFs). Among those, 8 ORFs were found to be homologues to the baculoviral ORFs: Cf-i-p , Cf-vi, Cf-vii, Cf-viii (ubiquitin), Cf-xi (pp31), Cf-xii (lef-11), Cf-xiii (sod) and Cf-xv-p (p74). To date, no specific function has been assigned to the ORFs: Cf-i, Cf-ii, Cf-iii, Cf-iv, Cf-v, Cf-vi, Cf-vii, Cf-ix and Cf-x. The most noticeable ORFs located in this region of the ChfuGV genome were ubiquitin, lef-11, sod, fibrillin and p74. The phylogenetic trees (constructed using conceptual products of major conserved ORFs) and gene arrangement in this region were used to further examine the classification of the members of the granulovirus genus. Comparative studies demonstrated that ChfuGV along with the Cydia pomonella granulovirus (CpGV), Phthorimaea operculella granulovirus (PhopGV), Adoxophyes orana granulovirus (AoGV) and Cryptophlebia leucotreta granulovirus (ClGV) share a high degree of amino acids sequence and gene arrangement preservation within the studied region. These results support a previous report, which classified a granuloviruses into 2 distinct groups: Group I: ChfuGV, CpGV, PhopGV and AoGV and Group II: Xestia c-nigrum granulovirus (XcGV) and Plutella xylostella granulovirus (PxGV). The phylogenetic and gene arrangement studies also placed ClGV as a novel member of the Group I granuloviruses.