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Microwave Thermal Decomposition of CF4 using SiC-Al2O3

SiC-Al2O3 촉매를 이용한 CF4의 마이크로파 열분해

  • Choi, Sung-Woo (Department of Environmental Science and Engineering, Keimyung University)
  • Received : 2012.12.10
  • Accepted : 2013.05.08
  • Published : 2013.09.30

Abstract

Tetrafluoromethane($CF_4$) have been widely used as etching and chemical vapor deposition gases for semiconductor manufacturing processes. $CF_4$ decomposition efficiency using microwave system was carried out as a function of the microwave power, the reaction temperature, and the quantity of $Al_2O_3$ addition. High reaction temperature and addition of $Al_2O_3$ increased the $CF_4$ removal efficiencies and the $CO_2/CF_4$ ratio. When the SA30 (SiC+30wt%$Al_2O_3$) and SA50 (SiC+50wt%$Al_2O_3$) were used, complete $CF_4$ removal was achieved at $1000^{\circ}C$. The $CF_4$ was reacted with $Al_2O_3$ and by-products such as $CO_2/CF_4$ and $AlF_3$ were produced. Significant amount of by-product such as $AlF_3$ was identified by X-ray powder diffraction analysis. It also showed that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ after microwave thermal reaction.

Keywords

References

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