• 한국환경과학회지
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• 제22권9호
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• pp.1097-1103
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• 2013

Tetrafluoromethane($CF_4$) have been widely used as etching and chemical vapor deposition gases for semiconductor manufacturing processes. $CF_4$ decomposition efficiency using microwave system was carried out as a function of the microwave power, the reaction temperature, and the quantity of $Al_2O_3$ addition. High reaction temperature and addition of $Al_2O_3$ increased the $CF_4$ removal efficiencies and the $CO_2/CF_4$ ratio. When the SA30 (SiC+30wt%$Al_2O_3$) and SA50 (SiC+50wt%$Al_2O_3$) were used, complete $CF_4$ removal was achieved at $1000^{\circ}C$. The $CF_4$ was reacted with $Al_2O_3$ and by-products such as $CO_2/CF_4$ and $AlF_3$ were produced. Significant amount of by-product such as $AlF_3$ was identified by X-ray powder diffraction analysis. It also showed that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ after microwave thermal reaction.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.393-397
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• 2002

Polyimide (PI) films have been studied widely as the interlayer dielectric materials due to a low dielectric constant, low water absorption, high gap-fill and planarization capability. The polyimide film was etched using inductively coupled plasma system. The etcying characteristics such as etch rate and selectivity were evaluated at different $CF_4/(CF_4+O_2)$chemistry. The maximum etch rate was 8300 ${\AA}/min$ and the selectivity of polyimide to SiO$_2$was 5.9 at $CF_4/(CF_4+O_2)$ of 0.2. Etch profile of polyimide film with an aluminum pattern was measured by a scanning electron microscopy. The vertical profile was approximately $90^{\circ}$ at $CF_4/(CF_4+O_2)$ of 0.2. As 20% $CF_4$ were added into $O_2$ plasma from the results of the optical emission spectroscopy, the radical densities of fluorine and oxygen increased with increasing $CF_4$ concentration in $CF_4/O_2$ from 0 to 20%, resulting in the increased etch rate. The surface reaction of etched PI films was investigated using x-ray photoelectron spectroscopy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.74-77
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• 2002

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1016-1020
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• 2002

Ru thin films were etched using CF/$_4$O$_2$ plasma in an ICP (inductively coupled plasma etching) system. The maximum etch rate of Ru thin films was 168 nm/min at a CF$_4$/O$_2$ gas mixing ratio of 10 %. The selectivity of SiO$_2$ over Ru was 1.3. From the OES (optical emission spectroscopy) analysis, the optical emission intensity of the O radical had a maximum value at 10% CF$_4$ gas concentration and drcrease with further addition of CF4 gas, but etch slope was enhanced. From XPS (x-ray photoelectron spectroscopy) analysis, the surface of the etched Ru thin film in CF$_4$/O$_2$ chemistry shows Ru-F bonds by the chemical reaction of Ru and F. RuF$_{x}$ compounds were suggested as a surface passivation layer that reduces the chemical reactions between Ru and O radicals. From a FE-SEM (field emission scanning electron microscope) micrograph, we had an almost perpendicular taper angle of 89$^{\circ}$.>.

• 멤브레인
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• 제22권3호
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• pp.201-207
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• 2012

본 연구에서는 PDMS (poly-dimethylsiloxane)와 PEBAX (polyether block amides) 분리막을 이용해 $N_2$, $O_2$, $CF_4$와 $SF_6$의 단일 기체 투과특성에 관하여 연구하였다. 다양한 압력으로 공급된 기체의 투과유량을 진공가압 연속흐름방식으로 측정하였으며, 이를 이용하여 투과도를 산정하였다. PDMS 분리막에서는 상부의 압력이 증가할수록 $SF_6$를 제외한 다른 기체의 투과도는 감소하였다. 또한 $SF_6$의 투과도가 $CF_4$보다 높게 나타나고 있으며 이것은 $SF_6$가 더 높은 임계온도를 가지고 있기 때문이다. PDMS 분리막에서 투과도는 $O_2$ > $N_2$ > $SF_6$ > $CF_4$ 순으로 감소하였다. 반면에 PEBAX 분리막에서 기체의 투과 경향은 $O_2$ > $N_2$ > $CF_4$ > $SF_6$ 순으로 감소하였다. 이러한 경향은 각 기체의 운동 반경의 크기(${\AA}$)($SF_6$ > $CF_4$ > $N_2$ > $O_2$) 순서와 반대로 나타났다. $SF_6/CF_4$의 순수 기체의 선택도는 PDMS 분리막에서 0.7 MPa일 때 2.1로 나타났다.

• 한국표면공학회지
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• 제32권2호
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• pp.165-171
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• 1999

The etching reaction of $UO_2$ in $CF_4/O_2$ gas plasma is examined as functions of $CF_4/O_2$ ratio, plasma power, and substrate temperature at up to $370^{\circ}C$ under the total pressure of 0.30 Torr. It is found that the highest etching rate is obtained at 20% $O_2$ mole fraction, regardless of r. f. power and substrate temperature. The existence of the optimum $CF_4/O_2$ ratio is confirmed by SEM, XPS and XRD analysis. The highest etching reaction rate at $370^{\circ}C$ under 150W exceeds 1000 monolayers/min., which is equivalent to 0.4$\mu\textrm{m}$/min. The mass spectrometry analysis results reveal that the major reaction product is uranium hexa-fluoride $UF_6$. Based on the experimental findings, dominant overall reaction of uranium dioxide in $CF_4/O_2$ plasma is determined : $8UO_2+12CF_4+3O_2=8UF_6+12CO_{2-x}$ where $CO_{2-x}$ represents the undetermined mix of $CO_2$ and CO.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.388-392
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• 2002

In this work, the etching of $CeO_2$ thin films has been performed in an inductively coupled $Ar/CF_4/Cl_2$ plasma. The highest etch rate of the $CeO_2$ thin film ws 250 ${\AA}/min$ and the selectivity of CeO$_2$to SBT was 0.4 at a 10% additive $Cl_2$ into Ar/($Ar+CF_4$)gas mixing ratio of 0.8. From result of X-ray photoelectron spectroscopy (XPS) analysis, there are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. During the etching of $CeO_2$ thin films in $Ar/CF_4/Cl_2$ plama, Ce-Cl and Ce-F bond is formed, and these prodcuts can be removed by the physical bombardment of Ar ions. The 10% additive $Cl_2$ into the Ar/($Ar+CF_4$)gas mixing ratio of 0.8 could enhance the reaction between Cl, F and Ce.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1509-1511
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• 2001

In this study, etching characteristics of polyimide(Pl) film with $O_2/CF_4$ gas mixing ratio was studied using inductively coupled plasma (ICP). The etch rate and selectivity were evaluated to chamber pressure and gas mixing ratio. High etch rate (over 8000$\AA$/min) and vertical profile were acquired in $CF_4$/($CF_4+O_2$) of 0.2. The selectivities of polyimide to PR and polyimide to $SiO_2$ were 1.15, 5.85, respectively. The profiles of polyimide film etched in $CF_4/O_2$ were measured by a scanning electron microscope (SEM) with using an aluminum hard mask pattern. The chemical states on the polyimide film surface were measured by x-ray photoelectron spectroscopy (XPS).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.267-267
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• 2014

디스플레이용 유도결합 플라즈마 시스템에서 CF4/O2 혼합가스를 이용하여 SiO2 식각공정에 대한 연구를 하기 위해 플라즈마 변수들에 대한 공간 분포를 살펴 보았다. 장비의 규격은 8세대 급, 안테나는 4turn을 기본으로 하며 동일한 크기의 안테나 9개를 배치하였다. 시뮬레이션 결과에 따른 플라즈마 주요변수들(전자밀도, 전자온도, 전위차)의 공간분포와 CF3+, CF2+, CF+, O2+, O-, F+, F- 이온들에 대한 공간분포를 확인 할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.62-65
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• 2001

$SrBi_2Ta_2O_{9}$ thin films were etched in inductively coupled $Cl_{2}$/$CF_{4}$/Ar plasma. The maximum etch rate was 1060 $\AA\textrm{m}$/min in $Cl_{2}$/$CF_{4}$/Ar (80). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy. The etching of SBT thin films in $Cl_{2}$/$CF_{4}$/Ar were etched by chemically assisted reactive ion etching. The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase Cl radical.