Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

A Study on Etch Characteristics of CeO2 Thin Film in An Ar/CF4/Cl2 Plasma

Ar/CF4/Cl2 플라즈마에 의한 CeO2 박막의 식각 특성 연구

  • 장윤성 (중앙대학교 전자전기공학부) ;
  • 김동표 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부) ;
  • 장의구 (중앙대학교 전자전기공학부)
  • Published : 2002.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this work, the etching of $CeO_2$ thin films has been performed in an inductively coupled $Ar/CF_4/Cl_2$ plasma. The highest etch rate of the $CeO_2$ thin film ws 250 ${\AA}/min$ and the selectivity of CeO$_2$to SBT was 0.4 at a 10% additive $Cl_2$ into Ar/($Ar+CF_4$)gas mixing ratio of 0.8. From result of X-ray photoelectron spectroscopy (XPS) analysis, there are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. During the etching of $CeO_2$ thin films in $Ar/CF_4/Cl_2$ plama, Ce-Cl and Ce-F bond is formed, and these prodcuts can be removed by the physical bombardment of Ar ions. The 10% additive $Cl_2$ into the Ar/($Ar+CF_4$)gas mixing ratio of 0.8 could enhance the reaction between Cl, F and Ce.

Keywords

References

  1. 전기전자재료학회 논문지 v.13 no.3 Ar/CHF₃플라즈마를 이용한 SBT 박막에 대한 식각 메카니즘 연구 서정우;이원재;유병곤;장의구;김청일
  2. 한국전기전자재료학회 2000하계학술대회 논문집 v.1 no.2 LiNbO₃/AIN 구조를 이용한 MFIS 커패시터의 제작 및 특성 이남열;정순원;김용성;김진규;정상현;김광호;유병곤;이원재;유인규;양일석
  3. IEEE Electron Device Lett. v.18 no.4 Nonvolatile memory operations of metal ferroelectric insulator semiconductor (MFIS) FET's using PLZT/STO/Si(100) structures E. Tokumitsh;R. I. Nakamura;H. Ishiwara https://doi.org/10.1109/55.563315
  4. 한국전기전자재료학회 2000추계학술대회 논문집 유도 결합 플라즈마(Cl₂/Ar)를 이용한 CeO₂박막의 식각 특성 연구 오창석;김창일;권광호
  5. Thin Solid Films no.368 Characterization of CeO₂thin films as insulator of metal ferroelectric insulator semiconductor (MFIS) structures H. W. Song;C. S. Lee;D.G. Kim;K. S. No
  6. 전기전자재료학회논문지 v.14 no.3 OES를 이용한 SBT 박막 식각 특성 연구 신성욱;김창일;장의구
  7. 전기전자재료학회논문지 v.11 no.10 CP에 의한 BCI₃/CI₂플라즈마 내에서 Pt 박막의 식각 특성 김창일;권광호
  8. J. Vac. Sci. Technol. v.A19 Etch characteristics of CeO₂thin film as a buffer layer for the application of ferroelectric random access memory C. S. Oh;C. I. Kim;K.-H, Kwon https://doi.org/10.1116/1.1376703