• Korean Journal of Materials Research
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• v.1 no.3
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• pp.139-144
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• 1991

The geometries and energies of $C_2-C_5$ clusters have been calculated using simple semiempirical potential energy functions. The results of the calculations show that the most stable structure of the $C_2-C_5$ clusters is linear and that not only the rhombic $C_4$ but also the Y-shaped $C_4$ hale similar energy to the linear $C_4$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.739-744
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• 1994

The B4C-C system was investigated to gain an understanding of the sintering behaviors of B4C. In order to get sintered density of 97% TD, sintering temperature of 225$0^{\circ}C$ was necessary. Since such a high temperature operation is actually difficult on a commercial basis, our objective was to examine the possibility of decreasing the sintering temperature by adding SiC. The addition of SiC in B4C increases the sintering rate about at 210$0^{\circ}C$ and results in a fine microstructure with more than 98% relative density on 55 wt% B4C-40wt% SiC-5 wt% C composition. The probability of liquid phase sintering was investigated, but the evidences of liquid phase formation were not observed with XRD and TEM observation. It was proposed that the addition of SiC and carbon to B4C reduce interface energy during sintering, which results in enhanced grain-boundary diffusion. Thus, the enhanced grain-boundary diffusion and retarded grain growth by SiC improve densification.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.93-93
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• 2008

This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + $H_2$).The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which mean that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at $1180^{\circ}C$ on AlN of after annealing.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.376-380
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• 2003

The microstructure and the mechanical properties of RS-SiC and RS-$SiC_f/SiC$ materials have been investigated in conjunction with the content of residual silicon and porosity. The mechanical properties of RS-SiC materials suffered from the thermal exposure were also examined. RS-SiC based materials bave been fabricated using the complex matrix slurry with different composition ratios of SiC and C panicles. The characterization of RS-SiC based materials was investigated by means of SEM, EDS ~d three point bending test. Based on the mechanical property-microstructure correlation, the high temperature applicability of RS-SiC based materials was discussed.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.514-520
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• 1989

The early hydration characteristics according to the C3S/C3A ratio and presence of gypsum, in order to establish the hydration mechanism of the system C3S-C3A, have been studied. The rate of C3S dissolution in the system C3S-Gypsum was higher than that in the system C3S. Consequently, the induction period was reduced and the rate of Ca(OH)2 formation in the accleration period was increased. The hydration of C3S in the system C3S-C3A was retarded because Al3+ in the liquid phase originating from the hydration of C3A was incorporated into calcium hydrosilicates formed. The retardation phenomenon of C3S hydration was not appeared in the system C3S-C3A-gypsum because the reaction of monosulfate formation became the rate-determining step.

• Journal of the Korean Society of Costume
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• v.54 no.5
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• pp.71-81
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• 2004

The purpose of this study was to investigate the customer service factors and evaluation of consumer satisfaction on the purchase through the C2C E- commerce, focusing on the fashion goods. 190 college students who have purchased products via C2C E-commerce were surveyed. For data analysis, descriptive statistics, 1-test, Pearson＇s correlations, and multiple regression were used. As the results, 50.5% of respondents have purchased fashion products through C2C. Out of 4 C2C characteristics factors. there was statistically the significant difference in only ＇entertainment factor＇ between males and females. All five SERVQUAL＇s factors used for measuring service factors in this study were correlated to customer satisfactions scores. Also. results of multiple regression revealed that assurance, empathy, and reliability were significantly to related to customer satisfaction. Based on these results, fashion marketing strategy for C2C development would be suggested.

• Journal of Sensor Science and Technology
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• v.18 no.3
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• pp.207-209
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• 2009

This paper describes the characteristics of poly 3C-SiC micro resonators with $3{\times}10^{17}{\sim}1{\times}10^{19}cm^{-3}$ doping concentrations. The 1.2 ${\mu}m$ thick cantilever and the 0.4 ${\mu}m$ thick doubly clamped beam resonators with different lengths were fabricated using poly 3C-SiC thin films. The characteristics of poly 3C-SiC micro resonators were evaluated by quartz and a laser vibrometer in vacuum at room temperature. The resonant frequencies of micro resonators decreased with doping concentrations owing to reduction in the Young's modulus of poly 3C-SiC thin films. It was confirmed that the resonant frequencies of poly 3C-SiC resonators are controllable by doping concentrations. Therefore, poly 3C-SiC resonators could be applied to MEMS devices and bio/chemical sensor applications.

• Journal of Korean Society for Quality Management
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• v.30 no.4
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• pp.44-57
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• 2002

In this paper we study two vector-valued process capability indices $C_{p}$＝($C_{px}$, $C_{py}$ ) and $C_{pk}$＝( $C_{pkx}$, $C_{pky}$) considering process capability indices $C_{p}$ and $C_{pk}$. First, we derive two asymptotic distributions of plug-in estimators (equation omitted) and (equation omitted) under. some proper. conditions. Second, we examine the performance of asymptotic confidence regions of our process capability indices $C_{p}$＝( $C_{px}$ , $C_{py}$ ) and $C_{pk}$＝( $C_{pkx}$, $C_{pky}$) under BN($\mu$$_{x}$, $\mu$$_{y}$, $\sigma$$^2$$_{x}$, $\sigma$$^2$$_{y}$,$\rho$)$\rho$)EX>)EX>)EX>)

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.1
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• pp.55-62
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• 2016

In this paper, we propose a hybrid multi.system-on-chip (H-MSoC) architecture that provides a high-flexibility system in a rapid development time. The H-MSoC approach provides a flexible system-on-chip (SoC) architecture that is easy to configure for physical- and application-layer development. The physical- and application-layer aspects are dynamically designed and modified; hence, it is important to consider a design methodology that supports rapid SoC development. Physical layer development refers to intellectual property cores or other modular hardware (HW) development, while application layer development refers to user interface or application software (SW) development. H-MSoC is built from multi-SoC architectures in which each SoC is localized and specified based on its development focus, either physical or application (hybrid). Physical HW development SoC is referred to as physical-SoC (Phy-SoC) and application SW development SoC is referred to as application-SoC (App-SoC). Phy-SoC and App-SoC are connected to each other via Ethernet. Ethernet was chosen because of its flexibility, high speed, and easy configuration. For prototyping, we used a LEON3 SoC as the Phy-SoC and a ZYNQ-7000 SoC as the App-SoC. The proposed design was proven in real-time tests and achieved good performance.