• Economic and Environmental Geology
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• v.39 no.6 s.181
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• pp.643-651
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• 2006

The Pb-Ag-Bi-S system minerals such as galena-matildite solid solutions, cosalite and heyrovskyite occur in the Nakdong As-Bi deposits. Galena-matildite solid solutions commonly coexisting with native bismuth fill in microfractures of pyrite grains and form irregular shapes. Cosalite forms composite grains including native bismuth, heyrovskyite and Bi-Te-S system minerals in the matrix of quartz vein. Matildite from the Nakdong deposits has an end member composition, $Ag_{1.07-1.11}Bi_{1.12-1.20}S_2$, and an excess concentration of $0.3{\sim}2.4$ mole % $Bi_2S_3$ compared to the stoichiomeoic value. PbS concentrations in $PbS-AgBiS_2$ solid solutions do not exceed 54 mole %. The average chemical composition of cosalite in the study area is $Pb_{1.79}Bi_{2.29}Ag_{0.12}S_5$. Pb is slightly depleted compared to the ideal composition, but the concentrations of Ag and Cu reach as much as 1.47 wt.% and 0.27 wt.%, respectively. Heyrovskyite has the chemical formula of $Pb_{5.01}Ag_{0.26}Bi_{2.70}S_9$ suggesting that there occurs the coupled substitution of $2Bi^{3+}$ for $3Pb^{2+}$ as well as that of $Ag^++Bi^{3+}$ for $2Pb^{2+}$. The genetic condition of Pb-Ag-Bi-S system minerals can be confined to the temperature of $220{\sim}270^{\circ}C$ and the pressure below 200 bars.

• Bulletin of the Korean Chemical Society
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• v.20 no.3
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• pp.337-340
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• 1999

Luminescence of bismuth activated CaS, CaS:Bi, prepared in sodium polysulfide is studied. Excitation spectrum of CaS:Bi shows a band at 350 nm due to the recombination process between holes in Na+Ca2+ and electrons in conduction bands, in addition to bands at 260 nm from band gap of CaS, and at 320 nm (1S0→1P1) and at 420 nm (1S0→3P1) from electronic energy transitions of Bi. Emission band at 450 nm is from 3P1→1S0 transition of Bi3+, bands at 500 nm and 580 nm correspond to recombinations of electron donors (Bi3+Ca2+ and VS2-) with acceptors (VCa2+ and Na+Ca2+). Emission band of 3P1→1S0 transition is shifted to longer wavelength from CaS:Bi to BaS:Bi, due to the increase of the Stokes shift by the decrease of the crystal field parameter from CaS:Bi to BaS:Bi.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.4
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• pp.62-66
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• 1989

$Bi_2S_3$ polycrystalline and $Bi_2S_3$ amorphous thin tilm were grown by the evaporation method. The measured lattic parameters were $a=1.708{\AA},\;b=0.351{\AA},\;and\;C=3.943{\AA}$ at substrate temperature $210^{cric}C$ were shown to have the orthorhombic structure. The energy gape of $Bi_2S_3$ polycrystalline that was made from thin film were measured to be 1.375eV at $289^{cric}K.$ The optical band gap of $Bi_2S_3$ amorphous thin film was measured to be 1.71eV at $289^{cric}K.$ It was supposed to mechanism that a photon absorption was changed at the center of 674nm (1.84eV)

• Journal of the Korean Ceramic Society
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• v.53 no.1
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• pp.56-62
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• 2016

A heterogeneous $Bi_2S_3/TiO_2$ composite catalyst was synthesized via a green ultrasonic-assisted method and characterized by XRD, SEM, EDX, TEM analysis. The results clearly show that the $TiO_2$ particles were homogenously coated with $Bi_2S_3$ particles, indicating that $Bi_2S_3$ particle agglomeration was effectively inhibited after the introduction of anatase $TiO_2$. The Texbrite BA-L (TBA) degradation rate constant for $Bi_2S_3/TiO_2$ composites reached $8.27{\times}10^{-3}min^{-1}$ under visible light, much higher than the corresponding value of $1.04{\times}10^{-3}min^{-1}$ for $TiO_2$. The quantities of generated hydroxyl radicals can be analyzed by DPCI degradation, which shows that under visible light irradiation, more electron-hole pairs can be generated. Finally, the possible mechanism for the generation of reactive oxygen species under visible-light irradiation was proposed as well. Our result shows the significant potential of $Bi_2S_3$-semiconductor-based $TiO_2$ hybrid materials as catalysts under visible light for the degradation of industry dye effluent substances.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1212-1220
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• 2000

Bi-2223 초전도체계에서 석출물을 flux-pinning center로 이용할 수 있는지 가능성을 타진하기 위하여 $Bi_{1.8}$P $b_{0.4}$S $r_{2}$C $a_{2.2}$C $u_3$ $O_{8}$ 조성을 가진 Bi-2223/Ag 선재를 반응온도, 산소분압, 시간 등을 변화시키면서 열처리를 행하였다. 열처리 후 석출물들은 XRD, SEM, TEM, EDS로 분석하였다. Bi-2223 모상내의 (Ca, Sr)$_2$(Pb,Bi) $O_4$, B $i_{0.5}$ P $b_3$S $r_2$C $a_2$Cu $O_{12+}$$\delta$/ (3221)와 같은 2차상들의 크기와 분포는 2223 입자들의 연결성을 파괴하지 않고 열처리 조건에 의해서 조절할 수 있었다. 서냉 열처리가 된 시편은 임계전류밀도( $J_{c}$)값이 증가하였는데, 이는 2223 입자내 나노미터 크기로 형성된 석출물들이 flux-pinning sites로 작용한 것으로 추정된다.다.

• Electronic Materials Letters
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• v.14 no.6
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• pp.689-699
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• 2018

Nanostructured Ni doped $Bi_2S_3$ ($Bi_{2-x}Ni_xS_3$, $0{\leq}x{\leq}0.07$) is explored as a candidate for telluride free thermoelectric material, through a combination process of mechanical alloying with subsequent consolidation by cold pressing followed with a sintering process. The cold pressing method was found to impact the thermoelectric properties in two ways: (1) introduction of the dopant atom in the interstitial sites of the crystal lattice which results in an increase in carrier concentration, and (2) introduction of a porous structure which reduces the thermal conductivity. The electrical resistivity of $Bi_2S_3$ was decreased by adding Ni atoms, which shows a minimum value of $2.35{\times}10^{-3}{\Omega}m$ at $300^{\circ}C$ for $Bi_{1.99}Ni_{0.01}S_3$ sample. The presence of porous structures gives a significant effect on reduction of thermal conductivity, by a reduction of ~ 59.6% compared to a high density $Bi_2S_3$. The thermal conductivity of $Bi_{2-x}Ni_xS_3$ ranges from 0.31 to 0.52 W/m K in the temperature range of $27^{\circ}C$ (RT) to $300^{\circ}C$ with the lowest ${\kappa}$ values of $Bi_2S_3$ compared to the previous works. A maximum ZT value of 0.13 at $300^{\circ}C$ was achieved for $Bi_{1.99}Ni_{0.01}S_3$ sample, which is about 2.6 times higher than (0.05) of $Bi_2S_3$ sample. This work show an optimization pathway to improve thermoelectric performance of $Bi_2S_3$ through Ni doping and introduction of porosity.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.741-742
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• 2011

XRD 결과와 TEM 분석으로부터 열처리효과에 따른 Bi-Te 박막의 미세구조 변화를 확인하였다. $Bi_2Te_3$ 상이 $SiO_2$ 와 Bi-Te 박막의 경계면을 따라서 성장하였고 이는 열전성능에 중요한 영향을 미치는 것을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1121-1129
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• 1998

Reactions between Ag-Pd internal electrode materials and{{{{ { {Bi }_{2 }O }_{3 } }} in multilayer chip varistor were in-vestigated. For more than 1 mol%{{{{ { {Bi }_{2 }O }_{3 } }} in varistor composition internal electrode structure was destroyed due to the reaction between internal electrode and{{{{ { {Bi }_{2 }O }_{3 } }} But for typical varistor compositions (below 1 mol% of{{{{ { {Bi }_{2 }O }_{3 } }} content) microstructural changes around the internal electrode were not observed. However SEM-EDS and TEM-EDS analysis showed the uneven distribution of{{{{ { {Bi }_{2 }O }_{3 } }} in the internal electrode which was due to the migration of{{{{ { {Bi }_{2 }O }_{3 } }} to the electorde during sintering. As a results the nonlinear coefficient of multilayer varistor showed very large distribution as well as the breakdown voltage.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.184-189
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• 2002

This study, compared with data of PbO-base glass system is a part of new glass composition design with Bi-base composition for PDP Rib. As $Bi_2O_3-B_2O_3-ZnO$ glass composition including Bi, which have similar density value and work facility to PbO, properties of softening point, thermal expansion coefficient, chemical durability, dielectric constant, and structural changing by XPS were investigated. $Bi_2O_3-B_2O_3-ZnO$ glass system, added 50∼80 wt% $Bi_2O_3$ widely, were presented 400∼480$^{\circ}C$ softening temperature, $68{\sim}72{\times}10^{-7}/^{\circ}C$ thermal expansion coefficient and 13∼25 dielectric constant. These results were showed similar physical properties with Pb-base glass system of same composition content, application possibility as starting composition of rib material was identified through micro-control of components and physical properties. The bonding energy of $O_{1s}$ as the $Bi_2O_3$ content decreasing was increased and full width at half-maximum (FWHM) was decreased, which is caused by non-bridging oxygen increasing.

• Journal of the Korean Magnetics Society
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• v.12 no.5
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• pp.195-200
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• 2002

Low temperature sintering of Co$_2$Z type Ba ferrites with various oxide additives has been studied. Co$_2$Z phase was obtained by 2 step calcination and XRD peaks showed a good agreement with the peaks of the standard Co$_2$Z phase, except for some minor extra peaks. ZnO-B$_2$O$_3$ glass, ZnO-B$_2$O$_3$ and CuO, ZnO-B$_2$O$_3$ and Bi$_2$O$_3$, and ZnO-Bi$_2$O$_3$ glass were added to lower sintering temperatures. Specimens were sintered at the temperature range between 900 $^{\circ}C$ and 1000 $^{\circ}C$. In the single addition of ZnO-B$_2$O$_3$ glass, the specimen with 7.5 wt％ showed the highest shrinkage. Specimens with complex addition of ZnO-B$_2$O$_3$ glass with CuO or Bi$_2$O$_3$ showed higher shrinkages and initial permeabilities than single addition of ZnO-B$_2$O$_3$ glass. Shrinkages and initial permeabilities of the specimens with ZnO-Bi$_2$O$_3$ glass were higher than those of ZnO-B$_2$O$_3$ glass addition.