• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.75-78
• /
• 2004

$Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) thin films were deposited on the $LaNiO_3$ (LNO (100))/Si and Pt/Ti/$SiO_2$/Si substrates by the metal-organic decomposition method. Structural and dielectric properties of BLT thin films for the applications in nonvolatile ferroelectric random access memories were investigated. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures $650^{\circ}C$, the BET thinfilms were successfully deposited on LNO bottom electrode and exhibited (001) and (117) orientation. Compared with the Pt electrode films, the BET thin films on the LNO electrode annealed at $650^{\circ}C$ showed better dielectric constantsand remanent polarization. The BET thin films on the LNO electrode for the annealing temperature of $650^{\circ}C$, the remanent polarization Pr and coercive field were $45.6\;C/cm^2$ and 171 kV/cm, respectively.

• Journal of applied mathematics & informatics
• /
• 제40권1_2호
• /
• pp.341-350
• /
• 2022

We introduce certain subclasses of bi-univalent functions related to the strongly Janowski functions and discuss the Taylor-Maclaurin coefficients |a₂| and |a₃| for the newly defined classes. Also, we deduce certain new results and known results as special cases of our investigation.

• Nuclear Engineering and Technology
• /
• 제53권4호
• /
• pp.1323-1330
• /
• 2021

This work reported the radiation shielding characteristic of the bismuth titanium vanadium sodium tellurite glass system. The density of the specially-developed glass samples was increased from 2.21 to 4.01 g/cm³ with the addition of Bi₂O₃, despite the fact the molar volume is decease within 85.43-54.79 cm³/mol. The WinXcom program was used to approximate the effect of Bi₂O₃ on the gamma radiation shielding parameters of bismuth titanium vanadium sodium tellurite glasses. The ㎛ values decrease with the increase of Bi₂O₃ concentration. The computed data shows that the glass sample with 20 mol.% of Bi₂O₃ content has the greatest radiation attenuation performance in comparison to other selected glasses. The Bi₂O₃-TiO₂-V₂O₅-Na₂O-TeO₂ glass system shows excellent neutron shielding material with high long-term light transmittance and discharge resistance and could be potentially used as transparent radiation-resistant shielding glass applications.

• 한국세라믹학회지
• /
• 제42권3호
• /
• pp.150-154
• /
• 2005

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_{3}O_{12}(BSmT)$ thin films were synthesized by sol-gel process. In this experiments, $Bi(TMHD)_{3},\;Sm_{5}(O^{i}Pr)_{13},\;Ti(O^{i}Pr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. The BSmT thin films were deposited on the Pt/TiO/SiO/Si substrates by spin-coating. Thereafter, the thin films with the thickness of 240 nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 h, and post-annealed in oxygen atmosphere for 1 h after deposition of Pt electrode to enhance the electrical properties. To investigate the effects of Sm-substitution in the BTO thin films, the BTO and BSmT thin films were prepared, respectively. The remanent polarization and coercive voltage of the BSmT thin films annealed at $720^{\circ}C$ were $19.48{\mu}C/cm^2$ and 3.40 V, respectively.

• 한국전기전자재료학회논문지
• /
• 제13권3호
• /
• pp.254-258
• /
• 2000

Current leads of high $T_{c}$ superconductor were fabricated with Bi excess B $i_{2.2}$/S $r_{1.8}$/C $a_{1}$/C $u_{2}$/ $O_{x}$ composition by rapid cooling method. The dimensions of final samples were fixed 3 mm and 8 mm diameter with 50 mm length each To control uniform density the samples were preformed by CIP(Cold Isostatic Press) process and followed by partial or full melting process after raising up to 90$0^{\circ}C$ for 30min. Plate shaped microstructure was clearly observed adjacent to the Ag tube wall and the size of plate was about 100$\mu$m. However the severe destruction of growth orientation was shown in the inner growth part. critical temperature ( $T_{c}$) was about 53~71K after directional growth while Tc was decreased about 77~80 K before directional growth. After directional growth critical current( $I_{c}$) and critical current density( $J_{c}$) in the specimen of 8 mm diameter at 50 K were about 110 A and 280 A/c $m^2$ respectively.pectively.ely.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2009년도 춘계학술대회 논문집
• /
• pp.454-456
• /
• 2009

N-Type $SbI_3$ doped $95%Bi_2Te_3+5%\;Bi_2Se_3$ compounds were newly fabricated by the combination of gas atomization process and Magnetic Pulsed Compaction process. The thermoelectric properties of the MPCed bulks according to consolidation temperatures were investigated by a combination of microscopy, XRD and thermoelectric property testing. The microstructure of MPCed bulk shows homogeneous and fine distribution through consolidated bulks due to the high solidification of compound powders. The research presented the challenges toward the successful consolidation of thermoelectric powder using magnetic pulsed compaction (MPC) and analysis of thermoelectric properties of the consolidated bulks.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2008년도 춘계학술대회 논문집
• /
• pp.525-527
• /
• 2008

N-Type $SbI_3$-doped $95%{Bi_2}{Te_3}-5%{Bi_2}{Se_3}$ compounds were prepared by a gas atomization and Magnetic Pulsed Compaction process. The dynamic recrystallization and thermoelectric properties of the MPCed bulks with consolidation temperatures and times were investigated by a combination of microscopy, XRD and thermoelectric property testing. The microstructure of MPCed bulk shows homogeneous and fine distribution through consolidated bulks due to dynamic recrystallization during hot MPC. This research presented the challenges toward the successful consolidation of thermoelectric powder using magnetic pulsed compaction (MPC).

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.259-260
• /
• 2006

This study was progressed to value of Bi2212 tubes uniformity depend on cooling conditions. The tube from 150 mm in length, 30 mm in O.D., 20 mm in I.D., 5 mm in thickness was combined with electrodes by 3 sections. The tube from 60, 70 mm in length, 30, 50 mm in O.D., 20.4, 40.4 mm in I.D., 4.8 mm in thickness was in controled of cooling rate by a heat exchanger. Bi2212 tubes were fabricated by Centrifugal Forming Process (CFP) and they were annealed at $840^{\circ}C$ for 80 h in oxygen atmosphere. The tube from 150 mm in length was analyzed by EFDLab of NIKA to show cooling rate and temperature distributions. When the tube was cooled for 100s, the temperature distributions was $663^{\circ}C$ in the middle, $500{\sim}647^{\circ}C$ in inlet, $598{\sim}647^{\circ}C$ in the other side. Electric characteristics from $I_c$ was 450 A in the middle, 650 A in inlet, 600 A in the other side. Electric characteristics by a heat exchanger showed the more fast cooling rate, the more high $I_c$.

• 한국전기전자재료학회논문지
• /
• 제16권6호
• /
• pp.522-531
• /
• 2003

Samples with the nominal composition, B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$C $a_{2.03}$C $u_{3.06}$ $O_{10+{\delta}}$ high- $T_{c}$ superconductors containing MgO as an additive were fabricated by a solid-state reaction method. Samples with MgO of 5~30 wt% each were sintered at 820~86$0^{\circ}C$ for 24 hours. The structural characteristics, critical temperature, grain size and image of mapping with respect to MgO contents were analyzed by XRD(X-Ray Diffraction), SEM(Scanning Electron Microscope) and EDS(Energy dispersive X-ray spectrometer) respectively. As MgO contents increased, intensity of MgO Peaks and ratio of Bi-2212 phase in superconductors intensified and the proportion of the phase transition from Bi-2223 to Bi-2212 was increased.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.183-186
• /
• 2004

The metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using a metalorganic decomposition (MOD)method. The $CeO_2$ thin films were deposited as a buffer layer on Si substrate and $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated by varying the $CeO_2$ layer thickness. The width of the memory window in the capacitance-voltage (C-V)curves for the MFIS structure decreased with increasing thickness of the $CeO_2$ layer. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) show no interdiffusion by using the $CeO_2$ film as buffer layer between the BLT film and Si substrate. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory field-effect-transistors (FETs) with large memory window.