• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1106-1111
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• 2006

To improve warpage, delamination and the chemical reaction between 2 different co-fired materials, the bonding behavior with common glass was studied. As shown in the previous paper, the phenomenon of the infiltration is different with the composition of the glass. In particular, in the case of low temperature melting glass, infiltration is experimented in this study. GA-1 glass is infiltrated among $BaTiO_3$ particles below $800^{\circ}C$ and is made by glass/ceramic composite. Until the laminate is fired under $850^{\circ}C$, provskite phase is observed. Although in the case of GA-12 glass, the temperature of the glass infiltration is lower than it of GA-l glass, the perovskite phase already disappears at $800^{\circ}C$. As a result, GA-1 and GA-12 glasses are infiltrated among particles at low temperature, however, the chemical reactivity of the glass/ceramic and sintering temperature should be considered.

• 한국전기전자재료학회논문지
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• 제35권4호
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• pp.412-417
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• 2022

Capacitive-type humidity sensors with a high sensitivity and fast response/recovery times have attracted a great attention in non-contact respiration biological signal monitoring applications. However, complicated fabrication processes involving high-temperature heat treatment for the hygroscopic film is essential in the conventional ceramic-based humidity sensors. In this study, a non-toxic ceramic/metal halide (BaTiO₃(BT)/NaCl) humidity sensor was prepared at room temperature using a solvent-free aerosol deposition process (AD) without any additional process. Currently prepared BT/NaCl humidity sensor shows an excellent sensitivity (245 pF/RH%) and superior response/recovery times (3s/4s) due to the NaCl ionization effect resulting in an immense interfacial polarization. Furthermore, the non-contact respiration signal variation using the BT/NaCl sensor was determined to be over 700% by maintaining the distance of 20 cm between the individual and the sensor. Through the AD-fabricated sensor in this study, we expect to develop a non-contact biological signal monitoring system that can be applied to various fields such as respiratory disease detection and management, infant respiratory signal observation, and touchless skin moisture sensing button.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1091-1094
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• 2004

High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.869-873
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• 2004

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

• 한국세라믹학회지
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• 제49권5호
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• pp.475-483
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• 2012

High capacitance X5R MLCCs based on $BaTiO_3$ ceramic dielectric layers exhibit a single broad, asymmetric arc shape impedance and modulus response over the wide frequency range between 1 MHz to 0.01 Hz. Analysis according to the conventional brick-layer model for polycrystalline conductors employing a series connection of multiple RC parallel circuits leads to parameters associated with large errors and of little physical significance. A new parametric impedance model is shown to satisfactorily describe the experimental spectra, which is a parallel network of one resistor R representing the DC conductivity thermally activated by 1.32 eV, one ideal capacitor C exactly representing bulk capacitance, and a constant phase element (CPE) Q with complex capacitance $A(i{\omega})^{{\alpha}-1}$ with ${\alpha}$ close to 2/3 and A thermally activated by 0.45 eV or ca. 1/3 of activation energy of DC conductivity. The feature strongly indicate the CK1 model by J. R. Macdonald, where the CPE with 2/3 power-law exponent represents the polarization effects originating from mobile charge carriers. The CPE term is suggested to be directly related to the trapping of the electronic charge carriers and indirectly related to the ionic defects responsible for the insulation resistance degradation.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.98-103
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• 2013

The alumina substrates that Ni electrode was printed on and the multi-layered PTCR thermistors of which composition is $(Ba_{0.998}Ce_{0.002})TiO_3+0.001MnCO_3+0.05BN$ were fabricated by a thick film process, and the effect of re-oxidation temperature on their resistivities and resistance jumps were investigated, respectively. Ni electroded alumina substrate and the multi-layered PTC thermistor were sintered at $1150^{\circ}C$ for 2 h under $PO_2=10^{-6}$ Pa and then re-oxidized at $600{\sim}850^{\circ}C$ for 20 min. With increasing the re-oxidation temperature, the room temperature resistivity increased and the resistance jump ($LogR_{290}/R_{25}$) decreased, which seems to be related to the oxidation of Ni electrode. The small sized chip PTC thermistor such as 2012 and 3216 exhibits a nonlinear and rectifying behavior in I-V curve but the large sized chip PTC thermistor such as 4532 and 6532 shows a linear and ohmic behavior. Also, the small sized chip PTC thermistor such as 2012 and 3216 is more dependent on the re-oxidation temperature and easy to be oxidized in comparison with the large sized chip PTC thermistor such as 4532 and 6532. So, the re-oxidation conditions of chip PTC thermistor may be determined by considering the chip size.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.72-79
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• 2022

Piezoelectric energy harvesting technologies, which can be used to convert the electricity from the mechanical energy, have been developed in order to assist or power the wearable electronics. To realize non-toxic and biocompatible electronics, the lead-free (Ba_0.85Ca_0.15)(Ti_0.90Zr_0.10)O₃ (BCTZ) nanoparticles (NPs) are being studied with a great attention as flexible energy harvesting device. Herein, piezoelectric hybrid nanocomposites were fabricated using BCTZ NPs-embedded poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] matrix to improve the performance of flexible energy harvester. Output performance of the fabricated energy device was investigated by the well-optimized measurement system during the periodically bending and releasing motions. The generated open-circuit voltage and the short-circuit current of the piezoelectric hybrid nanocomposite-based energy harvester reached up to ~15 V and ~1.1 ㎂, respectively; moreover, the instantaneous power of 3.5 ㎼ is determined from load voltage and current at the external load of 20 MΩ. This research is expected to cultivate a new approach to high-performance wearable self-powering electronics.