• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.996-1002
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• 2000

Ferroelectric (Ba, Sr) TiO$_3$(BST) thin films have attracted much attention for use in new capacitor materials of dynamic random access memories (DRAMs). In order to apply BST to the DRAMs, the etching process for BST thin film with high etch rate and vertical profile must be developed. However, the former studies have the problem of low etch rate. In this study, in order to increase the etch rate, BST thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) that have much higher plasma density than RIE (reactive ion etching) and ICP (inductively coupled plasma). Experiment was done by varying the etching parameters such as CF$_4$/(CF$_4$+Ar) gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 170nm/min under CF$_4$/CF$_4$+Ar) of 0.1, 600 W/-350 V and 5 mTorr. The selectivities of BST to Pt and PR were 0.6 and 0.7, respectively. Chemical reaction and residue of the etched surface were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS).

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1411-1413
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• 2001

The $(Ba_{0.5}Sr_{0.5})(Nb_{0.5}Ti_{0.5})O_3$ [BSNT] ceramics were prepared by conventional mixed oxide method. The structural properties of the BSNT ceramics with sintering temperature were investigated by XRD, SEM, EDS. Increasing the sintering temperature, diffraction intensity of the BST(110) peak was increased. The average grain size of BSNT ceramics were increased with sintering temperature. In the case of BSNT ceramics sintered at 1550$^{\circ}C$, the grain was uniform and the pore was not existed. Increasing the sintering temperature from 1400$^{\circ}C$ to 1500$^{\circ}C$, the amount of Nb and Sr were decreased. The density of BSNT ceramics sintered at 1550$^{\circ}C$ was $1.125g/cm^2$.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.679-684
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• 1998

Dielectricand pyroelectric properties of {{{{ { { {Ba }_{0.67 }Sr }_{0.33 } }`TiO_{3 } ^{ } }} (BST) thin plates and films were investigated. For BST thin plates maximum dielectric constant and pyrolelectric coefficient were observed at around 24$^{\circ}C$ and pyroelectric characteristics were improved as applied bias field was increased. When the electric field of 4kV/cm was applied to the thin plates sintered at 140$0^{\circ}C$ the pyroelectric coefficients over 4$\times$10-7C/{{{{ { cm}^{2 }K }} were obtained in the range of 0-4$0^{\circ}C$ BST thin films deposited using rf magnetron sputtering showed [001] preferred orientation at substrate temperatures above 50$0^{\circ}C$ On the contrary to the thin plates the dielectric constants of the thin films gradually increased above 15$^{\circ}C$ and decreased as applied bias field in-creased. The pyroelectric coefficients of thin films were lower than 1/10 those of thin plates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.311-311
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• 2010

Aerosol deposition method(ADM)은 상온에서 에어로졸화 된 고상의 원료분말을 노즐을 통해 분사시켜 소결과정을 거치지 않고도 상온에서 고밀도 후막을 제조할 수 있는 공정이다. 이러한 Aerosol deposition method의 장점은 상온에서 고밀도 후막을 제조할 수 있고, 다양한 재료의 코팅이 가능하며, 코팅층의 조성 및 화학 양론비의 제어가 용이하다. 본 연구에서는 많은 장점을 가지고 있는 Aerosol deposition method를 이용하여 높은 유전상수, 압전계수, 초전계수를 갖는 $BaTiO_3$ 분말을 원료로 하여 압전소자, 커패시터, 고전압용 유전체 등에 응용이 가능한 유전체 형성에 관한 연구를 진행하였다. 또한 $BaTiO_3$ 같은 강유전체 세라믹을 이용하여 여러 가지 소자를 제조하는 경우 소자의 미세조직에 따라 물성이 영향을 받는 것으로 확인되어져 있다. 이에 본 연구에서는 세라믹 분말보다 상대적으로 탄성이 큰 polymer 분말 중 높은 유전율을 갖고 압전특성이 있는 Polyvinyl difluoride(PVDF)를 선정하여 $BaTiO_3$ 분말에 첨가하여 동시분사법을 사용해 복합체 후막을 성장시켰고, 또한 금속 분말을 첨가하여 동시분사법을 사용해 복합체 후막을 성장시켰다. 성장된 복합체 후막은 유전율과 유전손실 그리고 leakage current, breakdown voltage, 미세구조 분석 등 다양한 분석이 이루어 졌으며, embedded capacitor 유전체 층으로 응용 가능성을 가늠하였고, 상온에서 제조된 유전체 층의 응용을 위한 최적의 공정조건을 제시하고자 한다.

• Journal of the Korean Ceramic Society
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• v.46 no.2
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• pp.123-130
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• 2009

To understand the formation of core-shell structure in $BaTiO_3$ (BT) grains in multilayer ceramic capacitors, specimens were prepared with BT powders mixed with Y and Mg, and their microstructures were investigated with scanning electron microscopy, x-ray diffractometry, and transmission electron microscopy. Microstructural investigation showed that Y dissolved easily in BT lattice to a certain depth inside of the grain, whereas Mg tended to stay at grain boundaries rather than become incorporated into BT. It was considered that in case of Y and Mg addition in a proper ratio, Y could play a dominant role in the formation of shell leading to a slight dissolution of Mg in the shell. Next, the effects of ball-milling conditions on the core-shell formation were studied. As the ball-milling time increased, the milled powders did not show a significant change in size distribution but rather an increase of residual strain, which was attributed to the milling damage. The increase in milling damage facilitated the shell formation, leading to the increased shell portion in the core-shell grain.

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.56-64
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• 1996

A large amount of papers about the cubic-to-tetragonal phase transition the ferroelectric domain structures of the BaTiO3 were already reported but there exist still some needs to observe the domain behaviors directly. In this study the domain structures of the tinned plates prepared from ta single crystal grown by the TSSG technique were observed using a polarizing microscope TE and X-ray topography. The spatial relation be-tween the orientation states of domains was investigated and the effects of external stresses and electric fields on the behaviors of ferroelectric and ferroelastic domains were studied. All the 90$^{\circ}$walls cut off in the crystal are the wedge shaped lamellar domains and all the straight boundaries in the observed domain patte군 can be interpreted as the head-to-tail 90$^{\circ}$walls. The irregular overlapped boundaries commonly observed by using a polarizing microscope and X-ray topography are complex combinations of well-known 90$^{\circ}$walls and are domain walls were predominant and were stabilized after surface polishing. In the paraelectric phase region the domain walls vanished but the residual surface strain patterns could be seen at the same positions of the stabilized 90$^{\circ}$a-a walls in the tetragonal phase region, These stabilized walls resulted from the surface strain had a memory effect in domain formation during the repeated phase transitions and could notr be affected by an external electtric field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.801-805
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• 2013

In this study, electrocaloric effects of Pb-free $(Ba_{0.85}Ca_{0.15})(Ti_{0.92}Zr_{0.08})O_3$ ferroelectric ceramics were investigated and discussed using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to $140^{\circ}C$. The remnant polarization $P_r$ and coercive field $E_c$ were decreased with increasing temperature. The temperature change ${\Delta}T$ by the electrcaloric effect was calculated by Maxwell's relations, and reached the maximum of ~0.15 at $120^{\circ}C$ under applied electric field of 30 kV/cm.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.2
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• pp.110-113
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• 2008

Embedded capacitor technology is one of the effective packing technologies for further miniaturization and higher performance of electric packaging system. In this paper, the embedded capacitors were simulated and fabricated in 8-layered printed circuit board employing standard PCB processes. The composites of barium titanante($BaTiO_3$) powder and epoxy resin were employed for the dielectric materials in embedded capacitors. Theoretical considerations regarding the embedded capacitors have been paid to understand the frequency dependent impedance behavior. Frequency dependent impedance of simulated and fabricated embedded capacitors was investigated. Fabricated embedded capacitors have lower self resonance frequency values than that of the simulated embedded capacitors due to the increased parasitic inductance values. Frequency dependent capacitances of fabricated embedded capacitors were well matched with those of simulated embedded capacitors from the 100MHz to 10GHz range. Quality factor of 20 was observed and simulated at 2GHz range in the 10 pF embedded capacitors. Temperature dependent capacitance of fabricated embedded capacitors was presented.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.95-101
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• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.339-339
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• 2007

Metal coating on ceramic powder has long been attracting interest for various applications such as superconductor where the brittle nature of high temperature ceramic superconductor was complemented by silver coating and metalloceramics where mechanical property improvement was achieved via electroless plating. More recently it has become of great interest in embedded passive device applications since metal coating on ceramic particles may result in the enhancement of the dielectric properties of ceramic-polymer composite capacitors. In our study, nickel ion-containing solution was used for coating commercial capacitor-grade $BaTiO_3$ powder. After filtering process, the powder was dried and heat-treated in 5% forming gas at $900^{\circ}C$. XRD and TEM were utilized for the observation of crystallization behavior and morphology of the particles. It was found that the nickel coating characteristics were strongly dependent on the several parameters and processing variables, such as starting $BaTiO_3$ particle size, nickel source, solution chemistry, coating temperature and time. In this paper, the effects of these variables on the coating characteristics will be presented in some detail.