• Title/Summary/Keyword: $BaTiO_{3}$

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Dielectric Properties of $BaTiO_3$ System Ferroelectric Thick Films Doped with $Dy_2O_3$ ($Dy_2O_3$$BaTiO_3$계 강유전체 후막의 유전특성)

  • Noh, Hyun-Ji;Yun, Sang-Eun;Park, Sang-Man;Ahn, Byeong-Lib;Lee, Sung-Gap
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.9
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    • pp.1609-1613
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    • 2007
  • (Ba,Sr,Ca)$TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-, Sr- and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectirc properties were investigated for various $Dy_2O_3$ doping contents. As a result of thermal analysis, the exothermic peak was observed at around 670^{\circ}C $ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size of the specimens decreased with increasing amount of $Dy_2O_3$. The average grain size and thickness of the BSCT specimens doped with 0.1 mol% $Dy_2O_3$ were approximately $1.9{\mu}m$ and $70{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss increased with increasing amount of $Dy_2O_3$, the values of the BSCT thick films doped with 0.1 mol% $Dy_2O_3$ were 3697 and 0.4% at 1 kHz, respectively. The leakage current densities in all BSCT thick films were less than $10^{-9}A/cm^2$ at the applied electric field range of 0-20 kV/cm.

Dielectric and piezoelectric properties of 0.96(Na0.5K0.5)NbO3-0.04(Ba(1-x)Srx)TiO3 lead-free ceramics (0.96(Na0.5K0.5)NbO3-0.04(Ba(1-x)Srx)TiO3 무연 세라믹스의 유전 및 압전 특성)

  • Kim, Mi-Ro;Yoon, Seok-Jin;Choi, Ji-Won
    • Journal of Sensor Science and Technology
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    • v.19 no.2
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    • pp.155-159
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    • 2010
  • 0.96$(Na_{0.5}K_{0.5})NbO_3$-0.04$(Ba_{(1-x)}Sr_x)TiO_3$ lead free piezoelectric ceramics were synthesized to enhance the piezoelectric properties of (Na,K)$NbO_3$. The systhesis and sintering method were the conventional solid state reaction method and general sintering method in air atmosphere. The polymorphic phase transition(PPT) was observed at all composition(0 $\leq$ x $\leq$ 0.05) when $(Ba_{(1-x)}Sr_x)TiO_3$ were added in the $(Na_{0.5}K_{0.5})NbO_3$. As Sr concentration was increased, grain size, dielectric loss(tan$\delta$) and mechanical quality factor($Q_m$) were decreased and piezoelectric constant($d_{33}$) and electromechanical coupling factor($k_p$) were increased within a limited value. The optimized piezoelectric and properties, $d_{33}$, $k_p$, $Q_m$, and tand, of 0.96$(Na_{0.5}K_{0.5})NbO_3$-0.04$(Ba_{(1-x)}Sr_x)TiO_3$ were 139 pC/N, 0.31 %, 95, 0.04 at the composition of x=0.04.

The Structure and Dielectric Properties of the (Ba,Sr)TiO$_3$ Thin Films with the Substrate Temperature (기판온도에 따른 (Ba,Sr)TiO$_3$ 박막의 구조와 유전특성)

  • 이상철;이문기;이영희
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.11
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    • pp.603-608
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    • 2000
  • $(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

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Effect According to Additive (Bi0.5Na0.5)TiO3 in BT-BNT System (BT-BNT계에서 (Bi0.5Na0.5)TiO3 첨가에 따른 효과)

  • Lee, Mi-Jai;Paik, Jong-Hoo;Kim, Sei-Ki;Kim, Bit-Nam;Lee, Woo-Yong;Lee, Kyung-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.1
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    • pp.35-40
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    • 2009
  • Lead free positive temperature coefficient of resistivity (PTCR) ceramics based on $BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ solid solution were prepared by a conventional solid state reaction method. The phase structure was showed single phase with perovskite structure regardless calcinations temperature and $Ba_{1-x}(Bi_{0.5}Na_{0.5})_xTiO_3$ structure was transformed from tetragonal to orthorhombic phase at $x{\geq}0.15$ mole. The XRD peaks with $45^{\circ}{\sim}46^{\circ}$ shifted in right the influence of crystal structure change and the intensity of peak was decreased with additive $(Bi_{0.5}Na_{0.5})TiO_3$. The curie temperature risen with additive $(Bi_{0.5}Na_{0.5})TiO_3$ but disappeared for $(Bi_{0.5}Na_{0.5})TiO_3$ addition more than 0.15 mole in TMA. In relative permittivity, the curie temperature by the transform of ferroelectric phase risen with additive $(Bi_{0.5}Na_{0.5})TiO_3$ but decreased in relative permittivity. Also, the peak of new curie temperature showed the sample containing $0.025{\sim}0.045$ mole of $(Bi_{0.5}Na_{0.5})TiO_3$ near $70^{\circ}C$ caused by phase transform from ferroelectric to ferroelectric and the peak of new curie temperature disappeared at 0.045 mole of $(Bi_{0.5}Na_{0.5})TiO_3$. In our study, it was found that the PTCR in $BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ system was possible for $0{\sim}0.025$ mole of $(Bi_{0.5}Na_{0.5})TiO_3$ and the maximum curie temperature by phase transition showed about at $145^{\circ}C$.

Microwave Dielectric Properties of Nonstoichiometric BSSNT Ceramics (비화학양론성 BSSNT 세라믹스의 마이크로파 유전 특성)

  • Park, In-Gil;Lee, Young-Hie;Ryu, Ki-Won;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
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    • 1994.11a
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    • pp.190-192
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    • 1994
  • Microwave dielectric properties of $0.15(Ba_xSr_{0.05})O-0.15(Sm_{2(1-y)}Nd_{2y})O_3-0.7TiO_2$ ($x=0.9{\sim}1.0[mol.]$, y=6[m/0]) and $0.15(Ba_{0.95}Sr_{0.05})O-0.15(Sm_{2(1-y)}Nd_{2y})O_3-zTiO_2$(y=6[m/o], $z=0.66{\sim}0.7[mol.]$) ceramics were investigated with the contents of BaO and $TiO_2$. In the specimen with contents of BaO (0.975[mol.]), dielectric constant, quality factor and temperature coefficient of resonant frequency have good values of 76.52, 3001(at 3[GHz]), +0.71[ppm/$^{\circ}C$], respectively. In the specimen with contents of $TiO_2$(0.69[mol.]), dielectric constant, quality factor and temperature coefficient of resonant frequency showed the maximum values of 80.89, 3057(at 3[GHz]), +26.12[ppm/$^{\circ}C$], respectively.

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A study on Dielectric and Electrical Properties Using PMN-PT-BT Ceramics (PMN-PT-BT계 세라믹스의 유전 및 전기적 특성)

  • Ji, S.H.;Lee, N.H.;Kim, Y.H.;Kim, J.S.;Cho, S.W.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1481-1483
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    • 1994
  • The dielectric and electrical properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3-BaTiO_3$ have been investigated. Perovskite crystalline phase of the specimens is confimed by XRD. The curie temperature decrease with increasing $BaTiO_3$ and hysteresis phenomena decrease with increasement of $BaTiO_3$. The strain vs. applied voltage characteristics exhibit nonlinear relationship and the specimen. of 0.9PMN-0.08PT-0.02BT shows the largest strain.

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Chemical Design of Highly Water-Soluble Ti, Nb and Ta Precursors for Multi-Component Oxides

  • Masato Kakihana;Judith Szanics;Masaru Tada
    • Bulletin of the Korean Chemical Society
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    • v.20 no.8
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    • pp.893-896
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    • 1999
  • Novel citric acid based Ti, Nb and Ta precursors that are highly stable in the presence of water were developed. No alkoxides of Ti, Nb and Ta were utilized in the preparation, instead much less moisture-sensitive metallic Ti, NbCl5 and TaCl5 were chosen as starting chemicals for Ti, Nb and Ta, respectively. The feasibility of these chemicals as precursors is demonstrated in the powder synthesis of BaTi4O9, Y3NbO7 and LiTaO3. The water-resistant Ti precursor was employed as a new source of water-soluble Ti in the amorphous citrate method, and phase pure BaTi4O9 in powdered form was successfully synthesized at 800 ?. The Pechini-type polymerizable complex method using the water-resistant Nb and Ta precursors was applied to the synthesis of Y3NbO7 and LiTaO3, and both the powder materials in their pure form were successfully synthesized at reduced tempera-tures, viz. 500-700 ?. The remarkable retardation of hydrolysis of these water-resistant precursors is explained in terms of the partial charge model theory.

Study on the Epoxy/BaTiO$_3$Embedded Capacitor Films for PWB Applications (인쇄회로기판 용 Epoxy/BaTiO$_3$내장형 커패시터 필름에 관한 연구)

  • 조성동;이주연;백경욱
    • Journal of the Microelectronics and Packaging Society
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    • v.8 no.4
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    • pp.59-65
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    • 2001
  • Epoxy/$BaTiO_3$composite capacitor films with excellent stability at room temperature, uniform thickness, and electrical properties over a large area ware successfully fabricated. The composite capacitor films with good film formation capability and easy process ability were made from epoxy resin developed for ACF as a matrix and two kinds of $BaTiO_3$powders as fillers to increase the dielectric constant of the composite film. The crystal structure of the powders and its effects on dielectric constant of the films were investigated by X-ray diffraction (XRD). And the optimum amount of dispersant, phosphate ester, was determined by viscosity measurement of suspension. DSC and dielectric property tests were conducted to decide the right curing temperature and the optimum amount of the curing agent. As a result, the capacitors of 7 $\mu \textrm{m}$ thick film with 10 nF/$\textrm{cm}^2$ and low leakage current were successfully demonstrated.

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Implementation of Stable Optical Information Security System using Interference-based Computer Generated Hologram iud $BaTiO_3$ (간섭을 기반으로한 컴퓨터형성홀로그램과 $BaTiO_3$를 이용한 안정한 광 정보보호 시스템의 구현)

  • 김철수;김종윤;박영호;김수중;조창섭
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.28 no.8C
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    • pp.827-834
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    • 2003
  • In this paper, we implemented an optical information security system using computer generated hologram based on the principle of interference and BaTiO$_3$that is photorefractive material. First of all, we would generate binary phase hologram which can reconstruct the original image perfectly, and regard this hologram as the image to be encrypted. And then applying the interference rule to the hologram, encrypted and reference (fkey information) images are generated. In the decrypting process, we can get an interference intensity by interfering the reference image and the encrypted image in the Mach-Zehnder interferometer. and transforming interference intensity information into phase information using LCD(liquid crystal display) and finally recover original image by inverse Fourier transforming the phase information. In this process, the Intensity information generated by interference of two images is very sensitive to external vibrations. So, we get a stable interference using the characteristic of SPPCM(self pumped phase conjugate mirror) of BaTiO$_3$that is photorefractive material. The proposed method has an advantage of double image encryption by encrypting the hologram of the image instead of original image.

Orientation States of Ferroelectric Domains and {111} Twins in $BaTiO_3$ ($BaTiO_3$의 {111}쌍정계면과 강유전 분역의 배향성)

  • 박봉모;정수진
    • Journal of the Korean Ceramic Society
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    • v.33 no.2
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    • pp.228-234
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    • 1996
  • It is very important to understand the domain structures of ferroelectric BaTiO3 in the poling process. Especially because {111} twinning is frequently observed in most BaTiO3 ceramics it is required to know the relations between the ferroelectric domains and the structural twin. In this study the domain structures of a {111} twinned crystal sample were observed under a polarizing microscope. and the relation between the {111} twin and the domain configurations could be classified into two types of 'V'-shape and linear shape penetrating perpendicular to the twin boundary. Domain formation obeys the symmetry of the {111} twining when a new domain structure is developed by heat treatment and surface deformation due to domain formation is also occured symmetrically between the both sides of the{111} twin boundary. This symmetrical behavior of the domains could be interpreted with the "head-to-tall" orientation of the domains across the {111} twin boundary.

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