• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.135-140
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• 1997

The influences of ZrB$_2$ additions to SiC on microstructural, DDM(Electrical Discharge Machining), mechanical and electrical properties were investigated. composites were prepared by adding 15, 30, 45 vol.% ZrB$_2$particles as a second phase to SiC matrix. SiC-ZrB$_2$ composites obtained by hot pressing for high temperature structural application were fully dense with the relative densities over 99%. The fracture toughness of the composites were increased with the ZrB$_2$contents. In case of composite containing 30vol.% ZrB$_2$, the flexural strength and fracture toughness showed 45% and 60% increase, respectively compared to that of monolithic SiC sample. The electrical resistivities of SiC-ZrB$_2$ composites decreased significantly with the ZrB$_2$ contents. The electrical resistivity of SiC-30vol.% ZrB$_2$ composite showed 6.50$\times$10$^{-4}$ $\Omega$.cm. Cutting velocity of EDM of SiC-ZrB$_2$ composites are directly proportional to duty factor of pulse width. Surface roughness, however, are not all proportional to pulse width. Higher-flexural strength composites show a trend toward smaller crater volumes, leaving a smoother surface; the average surface roughness of the SiC-ZrB$_2$ 15 vol.% composite with the flexural strengthe of 375㎫ was 3.2${\mu}{\textrm}{m}$, whereas the SiC-ZrB$_2$ 30.vol% composite of 457㎫ was 1.35${\mu}{\textrm}{m}$. In the SEM micrographs of the fracture surface of SiC-ZrB$_2$ composites, the SiC-ZrB$_2$ two phases are distinct; the white phase is the ZrB$_2$and the gray phase is the SiC matrix. In the SEM micrographs of the EDM surface, however, these phases are no longer distinct because of thicker recast layer of resolidified-melt-formation droplets present. It is shown that SiC-ZrB$_2$ composites are able to be machined without surface cracking.

• 대한화학회지
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• 제39권6호
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• pp.440-445
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• 1995

메탄올 용액에서 Nd(III)과 B15C5(benzo-1,4,7,10,13-pentaoxacyclopentadecane)의 치환체들간의 착물형성에 따른 화학적 조겅비 및 온도변화에 따른 안정도상수, 열역학적 파라메타들을 분광광도법과 전기전도도법을 이용하여 결정하였다. 이때 B15C5의 치환기들은 $CH_3,\;Br\;CHO,\;NO_2$ 및 43,4-(NO_2)_2$이었다. 메탄올 용액에서 Nd(III)과 이들 리간드와의 착물의 조성비는 1:1임을 알 수 있었으며, 안정도상수는 치환기효과에 $B15C5-3,4(NO_2)2 의하여 순으로 증가함을 알 수 있었다. 또한 용매변화에 따른 안정도상수의 순위는 용매 염기도(DN)에 역비례하는데 이는 용매의 염기도, 리간드의 염기도, 금속이온의 용매화 현상 및 착물형성에 따른 엔트로피변화 등으로 설명할 수 있었다.

• 한국동물학회지
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• 제34권2호
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• pp.228-231
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• 1991

한국인 383명의 Compiement Component 6(C6)의 유전적 다형을 등전점 전기영동과 immunoblotting으로 조사하였다. 5가지 allotypes, C6 A, C6 B, C6 B2, C6 Ml, C6 M11이 나타났고, 이들의 대립유전인자 빈도는 C6*A=0.4399, C6*B=0.5144, C6*B2=0.0392로 산출되어 이는 동아시아인과 비슷하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1303-1304
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• 2007

The composites were fabricated, respectively, using 61[vol.%]SiC-39[vol.%]$TiB_2$ and using 61[vol.%]SiC-39[vol.%]$ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_{2}O_{3}+Y_{2}O_{3}$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was occurred on the SiC-$TiB_2$ and SiC-$ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 226.06[Mpa] and 86.38[Gpa] in SiC-$ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SiC-$ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the SiC-$TiB_2$ and SiC-$ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the value of $6.88{\times}10^{-3}/[^{\circ}C]$ and $3.57{\times}10^{-3}/[^{\circ}C]$ for SiC-$ZrB_2$ and SiC-$TiB_2$ composite in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1080-1081
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• 2006

In this investigation, $B_4C$ based ceramic composites were fabricated by in-situ reaction hot pressing using $B_4C$, TiC SiC powder as starting materials. The reaction synthesized composites by hot pressing at $1950^{\circ}C$ was found to posses very high relative density. The reaction synthesized $B_4C$ composites comprise $B_4C$, $TiB_2$, SiC and graphite by the reaction between TiC and $B_4C$. The newly formed $TiB_2$ and graphite was embedded both inside grain and at grain boundary $B_4C$. The mechanical properties of reaction synthesized $B_4C-TiB_2-SiC$-graphite composites were more enhanced compared to those of monolithic $B_4C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.381-384
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• 2001

The $\beta$-SiC+ZrB$_2$ and $\beta$-SiC+TiB$_2$ceramic electroconductive composites were pressureless-sintered and annealed by adding l2wt% A1$_2$ $O_3$+Y$_2$ $O_3$(6 : 4wt%) powder as a function of sintering temperature. The relative density showed highest value of 84.92% of the theoretical density for SiC-TiB$_2$ at 190$0^{\circ}C$ sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), TiB$_2$, $Al_{5}$Y$_2$ $O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest of 230 MPa for SiC-ZrB$_2$ composites sintered at 190$0^{\circ}C$. The vicker's hardness increased with increasing sintering temperature and showed the highest for SiC-ZrB$_2$ composites sintered at 190$0^{\circ}C$. Owing to YAG, the fracture toughness showed the highest of 6.50 MPa . m$^{1}$2/ for SiC-ZrB$_2$ composites at 190$0^{\circ}C$. The electrical resistivity was measured by the Rauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity).).

• 한국분말재료학회지
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• 제1권1호
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• pp.15-20
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• 1994

The effect of SiC addition on sintering behaviors and microstructures of TiB2 ceramics were studied. The sintering of TiB2 was limited due to the surface diffusion and rapid grain growth at high temperature. However the addition of SiC to TiB2 ceramics improved the densification to above 99% of the theoretical density. The sintering of TiB2-SiC composite starts at 120$0^{\circ}C$ with the melting of the oxides in particle surface as impurities. After the reduction of the oxide by additional cabon at above 140$0^{\circ}C$, the grain boundary diffusion through the interface of TiB2-SiC play an important role. TEM observation showed neither chemical reactions nor other phases formed at the TiB2-SiC interfaces but the microcracks were observed due to the mismatch of thermal expansion between TiB2-SiC.

• 한국세라믹학회지
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• 제40권1호
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• pp.18-23
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• 2003

정량의 B$_2$O$_3$/A1/C의 혼합분말을 화학노 대신 고압의 알곤 분위기를 사용하여 SHS 공정으로 B$_4$C-A1$_2$O$_3$ 복합분말을 제조하였다. 2B$_2$O$_3$+4A1+C=B$_4$C-2A1$_2$O$_3$의 반응식에 해당하는 B$_2$O$_3$(-100 메쉬), Al(-200 메쉬), C(-200 메쉬)의 분말을 2시간 건식 볼밀로 혼합한 후, 고온 고압의 SHS 반응기에 넣고 약 10기압의 알곤 분위기에서 점화하여 SHS을 일으켰다. 반응 생성물은 XRD 분석으로 안과 겉이 균일하게 반응이 일어났으며 반응 생성물로 화학노 사용시 동반되는 부산물 AlB$_{12}$C$_2$가 없는 B$_4$C-A1$_2$O$_3$ 복합 분말을 얻었다. 이 복합 분말은 SEM으로 보면 약 0.3~l $mu extrm{m}$ 크기의 결정이 모인 약 60~100$\mu\textrm{m}$ 크기이었다. 그러나 약 15기압을 사용하였을 때는 부분 소결이 일어나 15~25$\mu\textrm{m}$ B$_4$C 분말에 0.1~0.2$\mu\textrm{m}$의 알루미나가 분산되어 있는 고강도의 복합 분말이 생성되었다.

• 전기학회논문지
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• 제58권4호
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• pp.770-776
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• 2009

The composites were fabricated by adding 0, 15, 30, 45[vol.%] $ZrB_2$ powders as a second phase to SiC matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by spark plasma sintering(SPS) were investigated. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed in the XRD and the phase analysis of the electroconductive SiC ceramic composites. The relative density of mono ${\beta}$-SiC, ${\beta}$-SiC+15[vol.%]$ZrB_2$, ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]$ZrB_2$ composites are respectively 99.24[%], 87.53[%], 96.41[%] and 98.11[%] Phase analysis of the electroconductive SiC ceramic composites by XRD revealed mostly of ${\beta}$-SiC, $ZrB_2$ and weakly of $ZrO_2$ phase. The flexural strength showed the lowest of 114.44[MPa] for ${\beta}$-SiC+15[vol.%]$ZrB_2$ powders and showed the highest of 210.75[MPa] for composite no added with $ZrB_2$ powders at room temperature. The trend of the mechanical properties of the electroconductive SiC ceramic composites is accorded with the trend of the relative density. The electrical resistivity of the electroconductive SiC ceramic composites decreased with increased $ZrB_2$ contents. The electrical resistivity of mono ${\beta}$-SiC, ${\beta}$-SiC+15[vol.%]$ZrB_2$, ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]$ZrB_2$ composites are respectively $4.57{\times}10^{-1},\;2.13{\times}10^{-1},\;2.68{\times}10^{-2}\;and\;1.99{\times}10^{-2}[{\Omega}{\cdot}cm]$ at room temperature. The electrical resistivity of mono ${\beta}$-SiC and ${\beta}$-SiC+15[vol.%]$ZrB_2$ are negative temperature coefficient resistance(NTCR) in temperature ranges from $25[^{\circ}C]\;to\; 100[^{\circ}C]$. The electrical resistivity of ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]ZrB_2$ are positive temperature coefficient resistance(PTCR) in temperature ranges from $25[^{\circ}C]\;to\;100[^{\circ}C]$. It is convinced that ${\beta}$-SiC+30[vol.%]$ZrB_2$ composites by SPS for heater or ignitors can be applied.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1254_1255
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• 2009

The composites were fabricated by adding 30, 35, 40, 45[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by Spark Plasma Sintering(hereafter, SPS) were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed in the XRD analysis. The relative density of SiC+30[vol.%]$ZrB_2$, SiC+35[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ composites are 88.64[%], 76.80[%], 79.09[%] and 88.12[%], respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of $ZrO_2$ phase. The electrical resistivity of SiC+30[vol.%]$ZrB_2$, SiC+35[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ composites are $6.74{\times}10^{-4}$, $4.56{\times}10^{-3}$, $1.92{\times}10^{-3}$ and $4.95{\times}10^{-3}[{\Omega}{\cdot}cm]$ at room temperature, respectively. The electrical resistivity of SiC+30[vol.%]$ZrB_2$, SiC+35[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$ and SiC+45[vol.%]$ZrB_2$ are Positive Temperature Coefficient Resistance(hereafter, PTCR) in temperature ranges from 25[$^{\circ}C$] to 500[$^{\circ}C$]. It is convinced that SiC+40[vol.%]$ZrB_2$ composite by SPS can be applied for heater or electrode.