• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.456-459
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• 2003

In this thesis, We observed the characteristic of the diffraction efficiency according to the wave length of the chalcogenide thin films. The used an $Ag(200{\AA})/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. We made grating formation by each wave length 325nm, 442nm, 632.8nm. After measure diffraction efficiency of the time. We expressed the maxium saturation value at fast time as were the short wavelength and stable characteristic. On the other hand we appeard to the by a maxium diffraction efficiency the 1.7% in 325nm, 0.8% in 442nm, 0.27% in 632.8nm. The maximum diffraction efficiency expressed high value as were the long wavelength.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.299-302
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• 2000

In this study, we have made the large holographic surface relief gratings on amorphous chalcogenide $As_{40}$$Ge_{10}$$Se_{15}$$S_{35}$ films by two beam interference using a He-Ne laser(632.8nm) light. The film thickness was about 0.6$\mu\textrm{m}$, we could magnify beam size by using beam expander. We made use $90^{\circ}$ holder which was made of reflection mirror and sample. Formed the surface relief structures were investigated using optical microscope. The diffraction efficiency was obtained by measuring +lst order intensity. In addition we investigated grating formation and diffraction efficiency as a function of polarization states which is linear or circular polarization. The results indicate that the grating was formed by linear polarized beam is better clear than that by circular polarized beam.

• Transactions on Electrical and Electronic Materials
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• 제5권6호
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• pp.219-222
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• 2004

This paper discovers that there are some peculiar properties that can remove holography grating, which was made in chacogenide thin film by impressed voltage. The thin films were used are $As_{40}Ge_{10}Se_{15}S_{35}$, and we use He-Ne laser in order to form thin films. I-V curved line in a thin film before a lattice was made has the critical point, about 3.7 V. Moreover, the I-V curved line increased current intensity at over 4 V after it made thin film. In addition, while holography grating is being made, and when it has the highest diffraction efficiency, a lattice can be deleted if put more voltage into it.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.139-144
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• 2001

In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1058-1061
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• 2003

In this thesis, we observed the optical characteristic of amorphous chalcogenide thin films by He-Cd laser. Also, grating formation by He-Ne laser and He-Cd laser. After analyze diffraction efficiency of the time on the $Ag(200{\AA})/As_{40}Ge_{10}Se_{15}S_{35}$ thin films. The result diffraction efficiency of Maximun 0.2% reduced according to time grating formation by He-Ne laser. Diffraction efficiency of Maximun 0.1% showed stabiliy characteristic according to time grating formation by He-Cd laser.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1861-1863
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• 1999

The polarization gratings were fabricated in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film applicable to a medium of the polarization holography and their diffraction efficiencies$(\eta)$ were monitored by real-time measurement. The polarization gratings prepared consisted of the multi-layer thin film system. As a method to improve the $\eta$, we have investigated its change for the field effect. As the results, the value of $\eta$ strongly depended on the voltage applied to the film and the maximum value, $\eta_{max}$ was enhanced to be about 4 times in comparison with that of not biased sample. In addition, an increase in the $\eta$ can be estimated to be due to additional creation of new defects caused by the electric field across the film.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.791-795
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• 2000

Amorphous chalcogenide glasses have a wide variety of light-induced effects. In this study, we have investigated the diffraction efficiency of chalcogenide. As$_{40}$ Ge$_{10}$ Se$_{15}$ S$_{35}$ thin films by the various applied electric fields. The holographic grating in these thin films has been formed using a linearly polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two method of applied electric field in the perpendicular and parallel to the direction of inducing beam. We obtained that properties of diffraction efficiency in the two methods of applied electric field. The result is shown that the diffraction efficiency of parallel electric field is 285% increase, η=1.1$\times$10$^{-3}$ and the diffraction efficiency of perpendicular electric field is 80% decrease, η=9.83$\times$10$^{-5}$ . Also, we have investigated the anisotropy property on chalcogenide thin films by the electric field effects.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1500-1502
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• 2000

In this study, we have investigated the photoinduced anisotropy (PA) phenomena by the assisted. electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Investigation of photoinduced anisotropy on the assisted electric field effect was carried out using a He-Ne laser beams (inducing and probing beams) illuminating the same area of the thin film. To investigate the effect of electric field, various bias voltages applied. The result is shown the photoinduced anisotropy dependence on electric field. Also. we obtained the property of photoinduced anisotropy in the electric field effects by various voltages.