• Journal of the Speleological Society of Korea
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• no.78
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• pp.17-22
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• 2007

The melting temperature and critical temperature (Tc) of $YBa_2Cu_3O_x$ with deferent content impurities of PbO and $BaPbO_3$ were studied. When the PbO was used as addition in $YBa_2Cu_3O_x$, although the melting point could be reduced, the superconductivity (the transition wide, ${\Delta}T_c$) became poor. From the XRD pattern of the sintered mixture of $YBa_2Cu_3O_x$ and PbO it was known that there is a reaction between $YBa_2Cu_3O_x$ and PbO, and the product is $BaPbO_3$. In the process of the reaction the superconducting phase of $YBa_2Cu_3O_x$ was decreased and in the sample $BaPbO_3$ became the main phase. Therefore the superconductivity was reduced. $BaPbO_3$ was chosen as the impurity for the comparative study. The single phase $BaPbO_3$ was synthesized by the simple way from both mixtures of $BaCO_3$ and PbO, $BaCO_3$ and $PbO_2$. Deferent contents of $BaPbO_3$ (10%, 20%, 30%) were added in the $YBa_2Cu_3O_x$. By the phase analysis in the XRD patterns it was proved that there were not reactions between $YBa_2Cu_3O_x$ and $BaPbO_3$. When $BaPbO_3$ was used as impurity in $YBa_2Cu_3O_x$ the superconductivity was much better than PbO as impurity in $YBa_2Cu_3O_x$. But the melting point of $YBa_2Cu_3O_x$ with $BaPbO_3$ could not be found when the temperature was lower than $1000^{\circ}C$ in the DTA measurement.

• Journal of the Optical Society of Korea
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• v.17 no.6
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• pp.543-547
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• 2013

A temperature dependent (10K-290K) photoluminescence (PL) study for two differently prepared ZnO thin films (as-grown and O-plasma treated) is presented. Four characteristic peaks were identified for both samples: (i) neutral donor-bound excitons ($D^oX$), (ii) two electron satellites (TES), (iii) phonon replica of $D^oX$ ($D^oX$-1LO), and (iv) donor-acceptor pair transition (DAP). As the sample temperature increased, $D^oX$-1LO and DAP transitions became indistinct. This was accompanied by newly-rising emission of free electron-acceptor transitions (e, $A^o$). The spectral evolution with temperature for as-grown samples also showed the optical emission from free excitons, which became dominant at higher temperatures. Some features related to O-plasma were identified in PL spectra: (i) different positions of TES transitions (28meV lower than $D^oX$ for as-grown samples and 35meV for O-plasma treated samples), (ii) the decrease of spectral intensity in both emissions of $D^oX$ and DAP after O-plasma treatment, and (iii) no noticeable transition from free excitons after the O-plasma treatment.

• Journal of the Korean Ceramic Society
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• v.37 no.6
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• pp.604-611
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• 2000

Glass-ceramics containing a cordierite (2MgO-2Al2O3-5SiO2) as a main crystal phase was prepared from MgO-Al2O3-SiO2 system glass through a controlled 2-step heat treatment for the application to magnetic memory disk substrate for higher storage capacity. Parent glasses prepared with addition of CeO2 as a fulx and TiO2 as a nucleating agent were crystallized by a 2-step heat treatment i.e. nucleation and crystal grwoth. Then the maximum nucleation and crystal growth rates were investigated and several properties such as bending strength, surface hardness and surface roughness were also studied for heat treated glass. As a result, only a $\alpha$-cordierite was precipitated as a main crystal phase for all heat treatment conditions and the maximum nucleation and crystal growth rates were 2.4$\times$109/㎣.hr at 80$0^{\circ}C$ and 0.3${\mu}{\textrm}{m}$/hr at 915$^{\circ}C$ respectively. After being nucleated at 80$0^{\circ}C$ for 5 hours and then crystallized at 915$^{\circ}C$ for 1 hour, the heat treated glass had a crystal volume fraction of 17.6% and crystal size fo 0.3${\mu}{\textrm}{m}$, and showed the optimum properties for the application to magnetic memory disk substrates as follows. ; Bending strength of 192 MPa, Vidkers hardness of 642.1kgf/$\textrm{mm}^2$, and surface roughness of 27$\AA$.

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1221-1226
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• 1997

The effects of sintering atmosphere and dopant addition on the behavior of densification and grain growth of SnO2 ceramics were investigated with consideration of defect chemistry. CoO and Nb2O5 were chosen as dopants, and oxygen and nitrogen were used for controlling of sintering atmospheres. With the decrease of oxygen partial pressure, densification was depressed due to evaporation of SnO2 ceramics. In the case of SnO2 sintering, the addition of CoO, which produced oxygen vacancy in SnO2 ceramics, led to acceleration of densification and grain growth. On the contrary, when Nb2O5 as a dopant producing Sn vacancy was added to SnO2 ceramics, densification and grain growth were simultaneously retarded. As results, it was conformed that diffusion of oxygen ions was rate determinant in densification and grain growth of SnO2 ceramics.

• Journal of the Korean Ceramic Society
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• v.23 no.3
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• pp.44-52
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• 1986

$Al_2O_3-ZrO_2$ ceramics was obtained by the co-precipitation method using $Al_2(SO_4)_2$.$18H_2O$ and $ZrOCl_2$.$8H_2O$ as starting materials $MgCl_2$.$6H_2O$ as a sintering aid and NH4OH as a hydrolyzing agent. The coprecipitate from the above raw materials was calcined at 125$0^{\circ}C$ for 1h and again sintered at 1$650^{\circ}C$ for 2h before measurements of strength hardness and fracture toughness. MgO addition was found to increase mechanical properties of the $Al_2O_3-ZrO_2$ system. The strength and frac-ture toughness of $Al_2O_3-ZrO_2$ ceramics were considered to be increased by stress-induced phase tranforma-tion of $ZrO_2$.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1274-1279
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• 1998

The glass forming ability of the PbO-B2O3-TiO3-BaO system was investigated in relation to transitieon tem-peratures and the atomic ratio between constituents. Glass forming tendency was improved as the tem-peratures and the atomic ratio between constituents. Glass forming tendency was improved as the tem-perature differences between liquidus temperature and crystallization(or glass transition) temperature de-creased and the temperature difference between crystallization and glass transition temperature increases. The atomic ratio could be used as a criterion to deign glass systems. The interposition of B and Ba atoms between Pb and Ti atoms was one of important factors in glass formation.

• Journal of environmental and Sanitary engineering
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• v.13 no.3
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• pp.58-65
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• 1998

Monodispersed $SiO_2/ZnO$ composite fine powders were prepared by Sol-Gel processing and their surface electrical and UV absorbance properties were investigated. Pseudomorph ZnO fine powders were microcapsuled by $SiO_2/ZnO$ sol fabricated using TEOS[tetraethylorthosilicate, purity 98% and ethanol as a solvent with $NH_3$ catalyst. The effects of experimental parameters such as molar ratio of starting materials on the final particle size and shape of $SiO_2/ZnO$ composite fine powder were discussed. As a result, we could controlled the size of monodispersed $SiO_2/ZnO$ composite fine powders without agglomeration, as well as the good dispersibility in aquous solution. The prepared powders were observed to have the mean particle sizes of $0.26-0.78{\mu}m$ with standard deviations of $0.020-0.063{\mu}m$.

• Journal of the Korean Ceramic Society
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• v.41 no.1
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• pp.57-61
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• 2004

Zinc Oxide (ZnO) have the crystal structure of wurtzite which is semiconducting oxide with band gap energy of 3.3eV. $In_2O_3$-doped ZnO films were fabricated by electron beam evaporation at $400^{\circ}C$ and their characteristics were investigated. The content of $In_2O_3$ in ZnO films had a marked effect on the electrical properties of the films. As $In_2O_3$ content decreased. $In_2O_3$-doped ZnO films was converted amorphous into crystallized films and showed a better characteristics generally as a transparent conducting oxide. As $In_2O_3$-doped ZnO films were prepared by $In_2O_3$-doped ZnO pellet with 0.2at% of $In_2O_3$ content, the value of resistivity was about $6.0 {\times} 10^{-3} {\Omega}cm$. The transmittance was higher than 85% throughout the visible range.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.423-437
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• 1989

Al2O3/ZrO2 composites were prepared by precipitation method using Al2(SO4)3.18H2O, ZrOCl2.8H2O and YCl3.6H2O as starting materials and NH4OH as a precipitation agent. Al2O3/ZrO2 composites(series A) were prepared by mixing Al2O3 powder obtained by single precipitation method with ZrO2(＋3m/o Y2O3) powder obtained by co-predipitation method. Al2O3/ZrO2 composites (series B) were prepared by co-precipitation method using the three starting materials. In all cases, the composition was controlled as Al2O3-15v/o ZrO2(＋3m/o Y2O3). The composites of series A showed higher final relative densities than those of series B and tetagonal ZrO2 in all cases was retained to about 95% at room temperature. ZrO2 particles were coalesced more rapidly in grain boundary of Al2O3 than within Al2O3 grain. ZrO2 particles were located at 3-and 4-grain junction of Al2O3 and limited the grain growth of Al2O3. It was observed that MgO contributed to densification of Al2O3 but limited grain growth of Al2O3 by MgO was not remarkable. In all Al2O3/ZrO2 composites, exaggerated grain growth of Al2O3 was not observed and Al2O3/ZrO2 composites were found to have homogeneous microstructures.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.479-486
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• 1989

According to the phase diagram, 6Bi2O3.GeO2 composition melts congruently at 93$0^{\circ}C$ and forms a stable ${\gamma}$-6Bi2O3.GeO2 crystal phase below the melting point. But when the melt of this composition was cooled at a rate 1-15$0^{\circ}C$/min without tapping by a glass rod or impurity addition, a metastable $\delta$-6Bi2O3.GeO2 crystal phase was formed. It is due to that as the nucleation energy barrier of $\delta$-6Bi2O3.GeO2 crystals, which have more open and defective structure, is lower than that of ${\gamma}$-6Bi2O3.GeO2 crystals. When impurities or ${\gamma}$-6Bi2O3.GeO2 crystals existed in the melt, stable ${\gamma}$-6Bi2O3.GeO2 crystal phase was formed at various cooling rate. It is because of that the impurities or the ${\gamma}$-6Bi2O3.GeO2 crystals role as a seed crystal and as a result the nucleation energy barrier of ${\gamma}$-6Bi2O3.GeO2 crystals is lowered.