• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.87-87
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• 2010

Photoelectrochemical (PEC) systems are promising methods of producing H2 gas using solar energy in an aqueous solution. The photoelectrochemical properties of numerous metal oxides have been studied. Among them, the PEC systems based on TiO2 have been extensively studied. However, the drawback of a PEC system with TiO2 is that only ultraviolet (UV) light can be absorbed because of its large band gap (3.2 - 3.4 eV). Two approaches have been introduced in order to use PEC cells in the visible light region. The first method includes doping impurities, such as nitrogen, into TiO2, and this technique has been extensively studied in an attempt to narrow the band gap. In comparison, research on the second method, which includes visible light water splitting in molecular photosystems, has been slow. Mallouk et al. recently developed electrochemical water-splitting cells using the Ru(II) complex as the visible light photosensitizer. the dye-sensitized PEC cell consisted of a dye-sensitized TiO2 layer, a Pt counter electrode, and an aqueous solution between them. Under a visible light (< 3 eV) illumination, only the dye molecule absorbed the light and became excited because TiO2 had the wide band gap. The light absorption of the dye was followed by the transfer of an electron from the excited state (S*) of the dye to the conduction band (CB) of TiO2 and its subsequent transfer to the transparent conducting oxide (TCO). The electrons moved through the wire to the Pt, where the water reduction (or H2 evolution) occurred. The oxidized dye molecules caused the water oxidation because their HOMO level was below the H2O/O2 level. Organic dyes have been developed as metal-free alternatives to the Ru(II) complexes because of their tunable optical and electronic properties and low-cost manufacturing. Recently, organic dye molecules containing multi-branched, multi-anchoring groups have received a great deal of interest. In this work, tri-branched tri-anchoring organic dyes (Dye 2) were designed and applied to visible light water-splitting cells based on dye-sensitized TiO2 electrodes. Dye 2 had a molecular structure containing one donor (D) and three acceptor (A) groups, and each ended with an anchoring functionality. In comparison, mono-anchoring dyes (Dye 1) were also synthesized. The PEC response of the Dye 2-sensitized TiO2 film was much better than the Dye 1-sensitized or unsensitized TiO2 films.

• Journal of the Korean Ceramic Society
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• v.33 no.5
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• pp.572-582
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• 1996

The porous silicon was prepared in the condition of 70mA/cm2 and 5.10 sec and then oxidized at 800~110$0^{\circ}C$ MOS(Metal Oxide Semiconductor) structure was prepared by Al electrode deposition and analyzed by C-V (Capacitance-Voltage) characteristics. Dielectric constant of oxidized porous silicon was large in the case of low temperature (800, 90$0^{\circ}C$) and short time(20-30min) oxidation and was nearly the same as thermal SiO2 3.9 in the case of high temperature (110$0^{\circ}C$) and long time (above 60 min) It is though to be caused byunoxidized silicon in oxidized porous silicon film and capacitance increase due to surface area increment effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.100-100
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• 2011

2004년 일본의 Hosono 그룹에 의해 처음 발표된 이래로, amorphous gallium-indium-zinc oxide (a-GIZO) thin film transistors (TFTs)는 높은 이동도와 뛰어난 전기적, 광학적 특성에 의해 큰 주목을 받고 있다. 또한 넓은 밴드갭을 가지므로 가시광 영역에서 투명한 특성을 보이고, 플라스틱 기판 위에서 구부러지는 성질에 의해 플랫 패널 디스플레이나 능동 유기 발광 소자(AM-OLED), 투명 디스플레이에 응용될 뿐만 아니라, 일반적인 Poly-Si TFT에 비해 백플레인의 대면적화에 유리하다는 장점이 있다. 최근에는 Y2O3나 ZrO2 등의 high-k 물질을 gate insulator로 이용하여 높은 캐패시턴스를 유지함과 동시에 낮은 구동 전압과 빠른 스위칭 특성을 가지는 a-GIZO TFT의 연구 결과가 보고되었다. 하지만 투명 디스플레이 소자 제작을 위해 플라스틱이나 유리 기판을 사용할 경우, 기판 특성상 공정 온도에 제약이 따르고(약 $300^{\circ}C$ 이하), 이를 극복하기 위한 부가적인 기술이 필수적이다. 본 연구에서는 p-type Si을 back gate로 하는 Inverted-staggered 구조의 a-GIZO TFT소자를 제작 하였다. p-type Si (100) 기판위에 RF magnetron sputtering을 이용하여 Gate insulator를 증착하고, 같은 방법으로 채널층인 a-GIZO를 70 nm 증착하였다. a-GIZO를 증착하기 위한 sputtering 조건으로는 100W의 RF power와 6 mTorr의 working pressure, 30 sccm Ar 분위기에서 증착하였다. 소스/드레인 전극은 e-beam evaporation을 이용하여 Al을 150 nm 증착하였다. 채널 폭은 80 um 이고, 채널 길이는 각각 20 um, 10 um, 5 um, 2 um이다. 마지막으로 Furnace를 이용하여 N2 분위기에서 $500^{\circ}C$로 30분간 후속 열처리를 실시한 후에, 전기적 특성을 분석하였다.

• The Journal of Korean Academy of Prosthodontics
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• v.41 no.6
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• pp.699-713
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• 2003

Statement of problem. Titanium is the most important material for biomedical and dental implants because of their high corrosion resistance and good biocompatibility. These beneficial properties are due to a protective passive oxide film that spontaneously forms on the surface. Purpose. The purpose of this study was to evaluate the responses of osteoblast-like cells on different surface treatments on Ti discs. Material and Methods. Group 1 represented the machined surface with no treatment. Group 2 surfaces were sandblasted with $50{\mu}m\;Al_2O_3$ under $5kgf/cm^2$ of pressure. Groups 3 and 4 were sandblasted under the same conditions. The samples were treated on a titanium oxide surface with reactive sputter depositioning and thermal oxidation at $600^{\circ}C$ (Group 3) and $800^{\circ}C$ (Group 4) for one hour in an oxygen environment. The chemical composition and microtopography were analyzed by XRD, XPS, SEM and optical interferometer. The stability of $TiO_2$ layer was studied by petentiodynamic curve. To evaluate cell response, osteoblast extracted from femoral bone marrow of young adult rat were cultured for cell attachment, proliferation and morphology on each titanium discs. Results and Conclusion. The results were as follows : 1. Surface roughness values were, from the lowest to the highest, machined group, $800^{\circ}C$ thermal oxidation group, $600^{\circ}C$ thermal oxidation group and blasted group. The Ra value of blasted group was significantly higher than that of $800^{\circ}C$ thermal oxidation group (P=0.003), which was not different from that of $600^{\circ}C$ thermal oxidation group (P<0.05). 2. The degree of cell attachment was highest in the $600^{\circ}C$ thermal oxidation group after four and eight hours (P<0.05), but after 24 hours, there was no difference among the groups (P>0.05). 3. The level of cell proliferation showed no difference among the groups after one day, three days, and seven days (P>0.05). 4. The morphology and arrangement of the cells varied with surface roughness of the discs.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.450-455
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• 2004

NiCr thin films were fabricated by thermal evaporation method using NiCr alloy as evaporating source. NiCr thin films were annealed at various temperatures in air atmosphere in order to investigate effects of annealing conditions on phase change, composition, and microstructures of NiCr films. Typical multilayer was formed after annealing in air atmosphere. This results from the diffusion and oxidation of Cr toward surface during annealing. In the case of annealing at 700$^{\circ}C$, large columnar grains of NiO were formed on Cr-oxide layer through the diffusion and oxidation of Ni over Cr-oxide layer. Especially, NiO layer was formed additionally on surface, sustaining the underlayer structure with the formation of porous Ni layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• Progress in Superconductivity
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• v.12 no.2
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• pp.118-123
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• 2011

The properties of $2^{nd}$ generation high temperature superconducting wire, coated conductor strongly depend on the quality of superconducting oxide layer and property of metal substrate is one of the most important factors affecting the quality of coated conductor. Good mechanical and chemical stability at high temperature are required to maintain the initial integrity during the various process steps required to deposit several layers consisting coated conductor. And substrate need to be nonmagnetic to reduce magnetization loss for ac application. Hastelloy and stainless steel are the most suitable alloys for metal substrate. One of the obstacles in using stainless steel as substrate for coated conductor is its difficulties in making smooth surface inevitable for depositing good IBAD layer. Conventional method involves several steps such as electro polishing, deposition of $Al_2O_3$ and $Y_2O_3$ before IBAD process. Chemical solution deposition method can simplify those steps into one step process having uniformity in large area. In this research, we tried to improve the surface roughness of stainless steel(SUS310). The precursor coating solution was synthesized by using yttrium complex. The viscosity of coating solution and heat treatment condition were optimized for smooth surface. A smooth amorphous $Y_2O_3$ thin film suitable for IBAD process was coated on SUS310 tape. The surface roughness was improved from 40nm to 1.8 nm by 4 coatings. The IBAD-MgO layer deposited on prepared substrate showed good in plane alignment(${\Delta}{\phi}$) of $6.2^{\circ}$.