• 센서학회지
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• 제1권2호
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• pp.107-116
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• 1992

$CH_{3}CN$ 감지를 위한 최적 모물질은 $CH_{3}CN$의 억분해 온도와 생성량을 적외선 흡수 스펙트럼으로부터 비교함으로써 선정되었다. $SnO_{2}$ 표면에서 $CH_{3}CN$은 $130^{\circ}C$에서부터 열분해되기 시작하여 $300^{\circ}C$에서는 많은 양의 생성물을 생성하였다. 산화반응에 의한 $CH_{3}CN$은 $CO_{2}$, $NH_{3}$ 및 $H_{2}O$로 열분해되었으며, $320^{\circ}C$에서부터 $N_{2}O$가 생성되기 시작하였다. $SnO_{2}$ 감지소자의 $CH_{3}CN$에 대한 감지특성은 $CH_{3}CN$과 금속산화물과의 산화반응으로 인해 생성된 흡착종에 의해 영향을 받았다. 감지물질표면과의 반응에서 생성된 흡착종은 CO, $NH_{3}$, $H_{2}O$ 및 $NO_{x}$ 등이었다. $NO_{x}$의 생성량은 감지특성에 큰 영향을 나타냄을 알 수 있다. 170 ppm의 $CH_{3}CN$에 대한 $SnO_{2}$의 감도와 동작온도는 각각 70% 정도와 $300^{\circ}C$이었다. 0.2wt% Pd 첨가된 $SnO_{2}/Al_{2}O_{3}/Pd$ 감지소자는 $CH_{3}CN$에 대해 높은 감도를 나타내었으며, 응답시간은 약 10초이었다.

• 한국정보통신학회논문지
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• 제13권1호
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• pp.115-120
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• 2009

PLD 법으로 3 wt.% Al이 도핑된 ZnO 타겟을 이용하여 corning 1737 기판위에 200 mTorr의 고정된 산소 분압에서 기판온도 ($100\;{\sim}\;250^{\circ}C$)에 따른 AZO 박막의 구조적, 광학적, 전기적 특성을 조사하였다. 모든 박막들은 c 축 배향되었으며, 오직 (002) 회절 피크만 관찰되었다. $250^{\circ}C$에서 제작한 AZO 박막에서 가장 우수한 (002) 배향성을 보였으며, 이때의 반가폭 값은 $0.44^{\circ}$ 였다. 모든 박막이 가시광 영역에서 85 % 이상의 투과율을 보였으며, Burstein-Moss 효과가 관찰되었다. 전기적 특성은 $250^{\circ}C$에서 제작한 박막에서 가장 우수한 캐리어 농도 ($3.48{\times}10^{20}cm^{-3}$)와 비저항 ($1.65{\times}10^{-2}{\Omega}cm$) 값을 나타냈다.

• 센서학회지
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• 제23권5호
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• pp.337-341
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• 2014

For various additives doped-$VO_2$ critical temperature sensors using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were systematically investigated. As a starting material of $VO_2$ sensor, vanadium pentoxide ($V_2O_5$) powders were used, and CaO, SrO, $Bi_2O_3$, $TiO_2$, and PbO dopants were used, respectively. The $V_2O_5$ powders with dopants were mixed with a vehicle to form paste. This paste was silk screen-printed on $Al_2O_3$ substrates and then $V_2O_5$-based thick films were heat-treated at $500^{\circ}C$ for 2 hours in $N_2$ gas atmosphere for the reduction to $VO_2$. From X-ray diffraction analysis, $VO_2$ phases for pure $VO_2$, and CaO and SrO-doped $VO_2$ thick films were confirmed and their grain sizes were 0.57 to $0.59{\mu}m$. The on/off resistance ratio of the $VO_2$ sensor in phase transition temperature range was $5.3{\times}10^3$ and that of the 0.5 wt.% CaO-doped $VO_2$ sensor was $5.46{\times}10^3$. The presented critical temperature sensors could be commercialized for fire-protection and control systems.

• 한국재료학회지
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• 제31권3호
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• pp.150-155
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• 2021

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 ℃. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10-4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

• 한국재료학회지
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• 제10권5호
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• pp.375-381
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• 2000

전해콘텐서용 알루미늄박을 ammonium adipate 용액을 이용하여 $65^{\circ}C$에서 10분간 100V 및 140V로 각각 양극 산화시켜 산화 알루미늄 유전체를 만들었다. 유전층의 두께, 화학양론적 관계, 결정구조 등을 RBS 및 TEM을 이용하여 분석하였고, 알루미늄박의 에칭시 황산 첨가로 인한 표면적의 변화는 임피던스 분석법으로 조사 하였다. 생성된 유전피막은 100V 및 140V의 전압을 사용했을 경우 각각 약 130nm 및 190nm 두께의 비정질로 나타났으며 피막의 알루미늄과 산소원소의 화학양자론적 비는 약 2:3의 비율로 존재했다. 또한 유전피막은 전자빔은 조사에 의해 쉽게 $${\gamma}$-Al_2$$O_3$ 형태의 결정질로 변태 되었다. 염산 에칭욕에 황산 첨가시 나타나는 알루미늄박의 표면변화는 임피던스 분석결과와 정전 용략의 변화가 일치하는 경향을 나타냈다.

• 센서학회지
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• 제16권6호
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• pp.407-412
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• 2007

For $VO_{2}$ sensors applicable to temperature measurement by using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were investigated systematically as a function of the annealing condition. The starting materials, vanadium pentoxide ($V_{2}O_{5}$) powders, were mixed with vehicle to form paste. This paste was screen-printed on $Al_{2}O_{3}$ substrates and then $VO_{2}$ thick films were heat-treated at $450^{\circ}C$ to $600^{\circ}C$, respectively, for 1 hr in $N_{2}$ gas atmosphere for the reduction. As results of the temperature vs. resistance property measurements, the electrical resistance of the $V_{2}O_{5}$ sensor in phase transition range was decreased by $10^{3.9}$ order. The presented critical temperature sensor could be used in fire-protection and control systems.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• ETRI Journal
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• 제31권6호
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• pp.660-666
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• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• 전기학회논문지
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• 제58권10호
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• pp.1976-1981
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• 2009

Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Coming glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, $Al_2O_3$: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X -ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature $100^{\circ}C$, Ar 50 sccm, $O_2$ 5 sccm and working pressure 5 motor showed the best properties of an electrical resistivity of $1.763{\times}10^{-4}\;[{\Omega}{\cdot}cm]$, a carrier concentration of $1.801{\times}10^{21}\;[cm^{-3}]$, and a carrier mobility of $19.66\;[cm^2/V{\cdot}S]$, which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

• Corrosion Science and Technology
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• 제6권6호
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• pp.316-321
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• 2007

The effect of annealing on the pitting corrosion resistance of anodized Al-Mg alloy (AA5052) processed by equal-channel angular pressing (ECAP) was investigated by electrochemical techniques in a solution containing 0.2 mol/L of $AlCl_3$ and also by surface analysis. The Al-Mg alloy was annealed at a fixed temperature between 473 and 573 K for 120 min in air after ECAP. Anodizing was conducted for 40 min at $100-400A/m^2$ at 293 K in a solution containing 1.53 mol/L of $H_2SO_4$ and 0.0185 mol/L of $Al_2(SO_4)_3$. The internal stress generated in anodic oxide films during anodization was measured with a strain gauge to clarify the effect of ECAP on the pitting corrosion resistance of anodized Al-Mg alloy. The time required to initiate the pitting corrosion of anodized Al-Mg alloy was shorter in samples subjected to ECAP, indicating that ECAP decreased the pitting corrosion resistance. However, the pitting corrosion resistance was greatly improved by annealing after ECAP. The time required to initiate pitting corrosion increased with increasing annealing temperature. The strain gauge attached to Al-Mg alloy revealed that the internal stress present in the anodic oxide films was compressive stress, and that the stress was larger with ECAP than without. The compressive internal stress gradually decreased with increasing annealing temperature. Scanning electron microscopy showed that cracks occurred in the anodic oxide film on Al-Mg alloy during initial corrosion and that the cracks were larger with ECAP than without. The ECAP process of severe plastic deformation produces large internal stresses in the Al-Mg alloy; the stresses remain in the anodic oxide films, increasingthe likelihood of cracks. It is assumed that the pitting corrosion is promoted by these cracks as a result of the higher internal stress resulting from ECAP. The improvement in the pitting corrosion resistance of anodized AlMg alloy as a result of annealing appears to be attributable to a decrease in the internal stresses in anodic oxide films