• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.249-249
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• 2012

최근 주목받고 있는 Flexible Organic Light Emitting Diode (OLED) display에서는 Flexible 특성이 요구된다. 이는 현재 쓰이는 유리기판 대신 플라스틱기판으로 만들어야 가능하다. 하지만 플라스틱기판은 구성물질로 유기물을 사용하므로 수분과 산소의 투과에 매우 취약하다. 이는 장시간 사용 시 기판 위에 제작된 소자성능저하를 야기하는 등의 소자 신뢰도에 치명적 결함을 갖게 하는 원인이 된다. 따라서 기판 위의 소자를 보호할 수 있는 봉지기술 개발이 필요한데 가장 잘 알려진 플라스틱 기판에 적합한 Barrier기술로 유기물과 무기물을 교대로 적층하는 기술[1] 등이 있다. 본 연구에서는 PE-CVD 공정기술을 이용한 Flowable Oxide 박막과 ALD 공정기술을 이용한 Al2O3 무기물 박막을 적층하여 봉지박막을 구성하려 한다. Flowable Oxide는 저온공정이 가능하며 높은 증착속도와 뛰어난 Gap fill 특성을 가지고 있는데 이는 플라스틱기판의 엉성한 분자구조를 치밀하게 만들 것으로 예상되며 표면의 Pin-hole 또한 쉽게 채우는 특성이 있다. 실험은 Polyethylene Naphthalate (PEN) film 위에 PE-CVD 공정을 이용하여 Flowable Oxide를 증착하고, 그 후에 ALD 공정을 이용하여 Al2O3을 적층한 것을 하나의 샘플로 하였다. 샘플의 분석은 Ca test를 이용한 Water Vapor Transmission rate(WVTR)과 FT-IR, FE-SEM을 이용하여 분석하였다. FT-IR로 박막의 구성요소를 확인 하고 FE-SEM으로 박막의 Cross section image를 얻을 수 있었으며 또한 $4.85{\times}10^{-5}g/m^2$ day의 초기 WVTR 값을 얻을 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.466-467
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• 2005

Al doped zinc oxide films (ZnO:Al) were deposited on glass substrate by RF magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The as-deposited ZnO:Al films were rapid-thermal annealed. Electrical properties and structural evolution of the films, as annealed by rapid thermal process (RTP), were studied and compared with the films annealed by conventional annealing process. RTP, the (002) peak intensity increases and the electrical resistivity decreases by 20%, after RT annealing. The effects of RT annealing on the structural evolution and electrical properties of RF sputtered films were further discussed and compared also with the films deposited by DC magnetron sputtering.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.351-357
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• 1995

The surface layer of the aluminum film reactively ion etched in $CF_4$ plasma was ana alyzed by using XPS. $AlF_3$ which is nonvolatile is formed at the aluminum surface. As the analyzed depth increases, the intensity of the $Al_{2p}$ peak of Al - F bonds decreases while that of a aluminum metallic bond increases. The thickness of the $AlF_x$ surface layer is 50~100 $\AA$ and the deep penetration of fluorine atoms is attributed to the mixing effect by the bombardment of incident particles. For the aluminum oxide film which is etched in $CF_4$ plasma under the same conditions, oxygen atoms are substituted by fluorine atoms to form $$AIF_x$ surface layer, which is m much thinner than that formed on aluminum surface.

• Journal of the Korean Magnetic Resonance Society
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• v.12 no.1
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• pp.26-32
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• 2008

We report on the ferromagnetic characteristics of $Zn_{1-x}Mn_xO$ films (x = 0.3) prepared by sol-gel method on the silicon and (0001) ${\alpha}-Al_2O_3$ substrates at the annealing temperature of 700$^{\circ}C$. Magnetic measurements show that Curie temperature ($T_C$) and the coercive field ($H_C$) for the film on the silicon are about 32 K and about 275 Oe, while those for that on the sapphire are about 32 K and 425 Oe, respectively. Energy dispersive spectroscopy and transmission electron microscopy measurements suggest that ferromagnetic precipitates originated by manganese oxide compound formed at the interfaces of the both substrates may be responsible for the observed ferromagnetic behavior of the films. Electron paramagnetic resonance study of the powders up to the concentration of x=0.15 supports the result.

• Korean Journal of Materials Research
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• v.17 no.12
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• pp.629-633
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• 2007

This study examined the effect of growth temperature on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% $Al_2O_3$). Various AZO films on glass were prepared by changing the substrate temperature from room temperature to $200^{\circ}C$. It was shown that intentionally incorporated hydrogen plays an important role on the electrical properties of AZO : H films by increasing free carrier concentration. As a result, in the 2% $H_2$ addition at the growth temperature of $150^{\circ}C$, resistivity of $3.21{\times}10^{-4}{\Omega}{\cdot}cm$, mobility of $21.9cm^2/V-s$, electric charge carrier concentration of $9.35{\times}10^{20}cm^{-3}$ was obtained. The AZO : H films show a hexagonal wurtzite structure preferentially oriented in the (002) crystallographic direction.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.10
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• pp.1311-1316
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• 1995

The electrical properties of the Langmuir-Blodgett (LB) films layered with arachidic acid were studied at the room temperature. The sample was formed with 2 different structure ; One was Al/LB/Al and the other was Au/LB/Au. The precise structure of Al/LB/Al was considered as Al/Al$_{2}$O$_{3}$/LB/Al, because the natural oxide layer was formed on surface of lower Al electrode. The electrical conductivity of Al/Al$_{2}$O$_{3}$/LB/Al structure was determined the value of 3.5 * 10$^{-14}$ S/cm from the measurement of current-voltage (I-V) characteristics. The sample with the structure of Au/LB/Au was made to eliminate the influence of oxide layer in the electrical properties of the LB films. The short circuit current was observed in this sample from the I-V characteristics. To verify the reason of short circuit current generation, copper decoration method was employed to the 15 layers of LB films deposited on the Al and Au electrode each. The defects were shown on the films deposited with Au electrode. This results means that the defects on the LB films which layered with the Au electrode were contributed to the short circuit current. Several films (15, 31, 51, 71L) were deposited on the Au electrode and measured the size of defects with the copper decoration method. The size of defects becomes smaller as the film layer was increased. We conclude that the existence of defects affects the short circuit current generation.

• Korean Journal of Materials Research
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• v.19 no.5
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• pp.259-264
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• 2009

In this study we investigated the effect of the multi-step texturing process on the electrical and optical properties of hydrogenated Al-doped zinc oxide (HAZO) thin films deposited by rf magnetron sputtering. AZO films on glass were prepared by changing the $H_2/(Ar+H_2)$ ratio at a low temperature of $150^{\circ}C$. The prepared HAZO films showed lower resistivity and higher carrier concentration and mobility than those of non-hydrogenated AZO films. After deposition, the surface of the HAZO films was multi-step textured in diluted HCl (0.5%) for the investigation of the change in the optical properties and the surface morphology due to etching. As a result, the HAZO film fabricated under the type III condition showed excellent optical properties with a haze value of 52.3%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.161-161
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• 2013

Two-dimensional electron gas (2DEG) has been investigated at the heterointerface between two insulating dielectric perovskite oxides, $LaAlO_3$ (LAO)/$SrTiO_3$ (STO). Properties of the 2DEG have attracted an enormous interest in condensed matter physics due to multifunctional properties such as the coexistence of ferromagnetism and superconductivity, as well as the high electron mobility. Here, we have grown $Ta_2O_5$ thin films using pulsed laser deposition on $SrTiO_3$ substrate to investigate the electric properties of the $Ta_2O_5$/STO heterointerface. Our research reveal that the non-polar $Ta_2O_5$/$TiO_2$ heterointerface favors the formation of 2DEG similar to that at the LAO/STO heterointerface. The metallic behavior was found in this heterointerface with the current about $10{\sim}100{\mu}A$ at 5 V by using conventional I-V measurements, when the $Ta_20_5$ film thickness reaches over critical thickness, $d_c{\simeq}2uc$. The finding that electrons was localized at $Ta_2O_5$/STO heterointerface have attracted to be strong and new candidate for nanoscale oxide device applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.38-42
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• 2001

Electric and dielectric(Ba,Sr)$TiO_3$[BST] thin films for emtal-Insulator-Semiconductor(MIS) capacitors have been studied. BST thin films wre deposted on p-Si(100) substrates bythe RF magnetron sputtering with tempratue range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of Al/BST/$SiO_2$/Si sandwich structure were evaluated ot redcue the leakage current density. The charge state densities of the MIS capacitors were determined by high frequency (1 MHz) C-V measurement. In order to reduce the leakage current in MIS capacitor, high quality $SiO_2$ layer was deposited on bare p-Si substrate. Depending on the oxygen pressure and substrate temperature both positive and negative polarities of effective oxide charge in the MIS capacitors were evaluated. It is considered that the density of electronic states, generated at the BST/$SiO_2$/p-Si interface due to the asymmetric structure within BST/$SiO_2$/Si structure, and the oxygen vacancy content has influence on the behavior of oxide charge.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.211-217
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• 2004

The oxidation behaviors of Ti-10Ta-10Nb alloy and Ti-6Al-4V alloy were studied in dry air atmosphere. Specimens were melted in consumable vacuum arc furnace and homogenized at $1050^{\circ}C$ for 24 h. Hot rolling was performed at $1000^{\circ}C$. Specimens of the alloys were oxidized as the temperature range $400~650^{\circ}C$ for 30 min. The oxidation behavior of the alloys was analysed by optical microscope, SEM/EDX, XRD, XPS and TGA. Immersion test was performed in 1% Lactic acid. In the microscope observation, oxide layer of Ti-10Ta-10Nb alloy was denser and thinner than Ti-6Al-4V's. The weight gains during the oxidation rapidly increased at the temperature above $600^{\circ}C$ in Ti-6Al-4V's alloy and$ 700^{\circ}C$ in Ti-10Ta-10Nb alloy. According to XRD results, oxide layers were composed of mostly $TiO_2$(rutile) phase. It was analysed that the passive film of the Ti alloys consisted of $TiO_2$ through X-ray photoelectron spectroscopy(XPS) analysis.