• Journal of the Korean Ceramic Society
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• v.43 no.10 s.293
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• pp.595-600
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• 2006

The preparation of $\beta$-SiAlON powder by SHS in the system of $Si-Al-SiO_2-NH_4F(\beta-Si_3N_4)$ was investigated in this study. In the preparation of SiAlON powder, the effect of gas pressure, compositions such as Si, $NH_4F$, \beta-Si_3N_4$ and additive in mixture on the reactivity were investigated. At 50 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure $\beta$-SiAlON was $3Si+Al+2SiO_2+NH_4F$. The $\beta$-SiAlON powder synthesized in this condition was a single phase $\beta$-SiAlON with a rod like morphology.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.351-357
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• 1995

The surface layer of the aluminum film reactively ion etched in $CF_4$ plasma was ana alyzed by using XPS. $AlF_3$ which is nonvolatile is formed at the aluminum surface. As the analyzed depth increases, the intensity of the $Al_{2p}$ peak of Al - F bonds decreases while that of a aluminum metallic bond increases. The thickness of the $AlF_x$ surface layer is 50~100 $\AA$ and the deep penetration of fluorine atoms is attributed to the mixing effect by the bombardment of incident particles. For the aluminum oxide film which is etched in $CF_4$ plasma under the same conditions, oxygen atoms are substituted by fluorine atoms to form $$AIF_x$ surface layer, which is m much thinner than that formed on aluminum surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.59-65
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• 2006

Al-doped and F-doped ZnO (ZnO : Al & ZnO : F) thin films were coated onto glass substrate by sol-gel method. These films showed c-axis orientation in common, but different I(002)/[I(002) + I(101)] and FWHM (full width at half-maximum). In particular, the grain size of the ZnO : Al films decreased with the increase in the Al-doping concentration, while for the ZnO : F films the grain siae increased up to F 3 at% and then decreased. For the electrical properties, Hall effect measurement was used. The resistivity of the ZnO : Al films and the ZnO : F films were, respectively, $2.9{\times}10^{-2}{\Omega}cm$ at Al 1 at% and $3.3{\times}10^{-1}{\Omega}cm$ at F 3 at%. Moreover compared with ZnO:Al films, ZnO:F films have lower carrier concentration (ZnO : Al $4.8{\times}10^{18}cm^{-3}$, ZnO : F $3.9{\times}10^{16}cm^{-3}$) and higher mobility (ZnO : Al $45cm^2/Vs$, ZnO : F $495cm^2/Vs$). For average optical transmittances, ZnO : Al thin films have $86{\sim}90%$ and ZnO : F films have $77{\sim}85%$ comparatively low.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.133-140
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• 2006

The growth characteristics and properties of large size $SrAlF_5$ single crystals are described and compared with those of $BaMgF_4$. Transmission spectra in the vacuum ultraviolet wavelength region indicate a high transparency of $SrAlF_5$ (about 90% without considering surface reflection loses) down to 150 nm, on contrast to the optical loses observed for $BaMgF_4$. The ferroelectric character of $SrAlF_5$ is evidenced by the reversal of the spontaneous polarization in a hysteresis loop. The higher potential of $SrAlF_5$ in comparison with $BaMgF_4$ for the realization of all-solid-state lasers in the ultraviolet wavelength region by the quasi-phase matching (QPM) technique is pointed out. $SrAlF_5$, besides a higher grade of transparency, shows a nonlinear effective coefficient similar to that of quartz and uniaxial nature, on contrast to the one order smaller nonlinear coefficient and biaxial character of $BaMgF_4$. The refractive index of $SrAlF_5$ from the ultraviolet to the near-infrared wavelength region is measured by the minimum deviation method. The Sellmeier and Cauchy coefficients are obtained from the fits to the curves of the ordinary and extraordinary refractive indices, and the grating period for the first order QPM is estimated as a function of the wavelength. The poling periodicity for 193 nm SHG from 386 nm is $4{\mu}m$.

• Communications of the Korean Mathematical Society
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• v.20 no.4
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• pp.723-729
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• 2005

Let F be a non-trivial non-Archimedian field. The sequence spaces $\Gamma\;(F)\;and\;{\Gamma}^{\ast}(F)$ were defined and studied by Soma-sundaram[4], where these spaces denote the spaces of entire and analytic sequences defined over F, respectively. In 1997, these spaces were generalized by Mursaleen and Qamaruddin[1] by considering an arbitrary sequence $U\;=\;(U_k),\;U_k\;{\neq}\;0 \;(\;k\;=\;1,2,3,{\cdots})$. They characterized some classes of infinite matrices considering these new classes of sequences. In this paper, we further generalize the above mentioned spaces and define the spaces $\Gamma(u,\;F,\;{\Delta}),\;{\Gamma}^{\ast}(u,\;F,\;{\Delta}),\;l_p(u,\;F,\;{\Delta})$), and $b_v(u,\;F,\;{\Delta}$). We also study some matrix transformations on these new spaces.

• Korean Journal of Materials Research
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• v.21 no.12
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• pp.644-649
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• 2011

[ $A_{3-2x/3}Al_{1-z}In_{z}O_4F:Eu_x^{3+}$ ](A = Ca, Sr, Ba, x = -0.15, z = 0, 0.1) oxyfluoride phosphors were simply prepared by the solid-state method at $1050^{\circ}C$ in air. The phosphors had the bright red photoluminescence (PL) spectra of an $A_{3-2x/3}Al_{1-z}In_{z}O_4F$ for $Eu^{3+}$ activator. X-ray diffraction (XRD) patterns of the obtained red phosphors were exhibited for indexing peak positions and calculating unit-cell parameters. Dynamic excitation and emission spectra of $Eu^{3+}$ activated red oxyfluoride phosphors were clearly monitored. Red and blue shifts gradually occurred in the emission spectra of $Eu^{3+}$ activated $A_3AlO_4F$ oxyfluoride phosphors when $Sr^{2+}$ by $Ca^{2+}$ and $Ba^{2+}$ ions were substituted, respectively. The concentration quenching as a function of $Eu^{3+}$ contents in $A_{3-2x/3}AlO_4F:Eu^{3+}$ (A = Ca, Sr, Ba) was measured. The interesting behaviors of defect-induced $A_{3-2x/3}Al_{1-z}In_{z}O_{4-{\alpha}}F_{1-{\delta}}$ phosphors with $Eu^{3+}$ activator are discussed based on PL spectra and CIE coordinates. Substituting $In^{3+}$ into the $Al^{3+}$ position in the $A_{3-2x/3}AlO_4F:Eu^{3+}$ oxyfluorides resulted in the relative intensity of the red emitted phosphors noticeably increasing by seven times.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.696-700
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• 2010

We fabricated red and blue organic light emitting display (OLEDs) which had the two kinds of multi-structure of ITO/HIL/HTL/EML/ETL/LiF/Al and ITO/HIL/HTL/EML/ETL/LiF/Al/LiF. In the case of red OLED that had LiF/Al/LiF structure compared to LiF/Al structure, the current density increased from 4.3 mA/$cm^2$ to 7.3 mA/$cm^2$, and the brightness increased from 488 cd/$m^2$ to 1,023 cd/$m^2$ at 7.0 V, and as a result the current efficiency was improved from 11.28 cd/A to 13.95 cd/A. Also in the case of blue OLED that had LiF on Al cathode layer, the current density increased from 1.2 mA/$cm^2$ to 1.8 mA/$cm^2$, and the brightness increased from 45 cd/$m^2$ to 85 cd/$m^2$ at 7.0 V, and as a result the current efficiency was improved from 3.69 cd/A to 4.82 cd/A. Through these experimental results it could be suggested that the LiF layer formed on Al prevents the oxidation of Al surface, and the electrode resistance become low with increase of supplied electrons, therefore the brightness and the efficiency are improved from the influence to the well-balanced bonding of electron and hole at emitting layer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.18-23
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• 2000

In this paper, we propose the organic light-emitting devices with vacuum evaporated ultrathin CsF layer between the AI electrode and conjugated polymer MEH-PPV which was spin coated. In this structure, the CsF layer will be well transferred the electron injection from the electrode to the emission layer MEH-PPV. Finally this structure enhances the emission efficiency of the organic light-emitting device. And we measured the I-V-L properties with the split of CsF thickness into the $2{\AA},\;4{\AA},\;8{AA},\;10{\AA},\;20{\AA},\;50{\AA},\;75{AA}$ respectively. And also we evaporated CsF/Al, CsF/Au Cs/Au electrode respectively for the comparison. As the results, we obtained the maximum quantum efficiency 0.6% at $4{\AA}$ CsF thickness and then at $8{\AA}$, it decreased a little but it's still better than pure Al electrode which has 0.01%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1017-1024
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• 2000

Effect of the microwave dielectric properties and the microstructure on a mole fraction(x=0.1~0.9) of (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ ceramics was investigated. When (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$(x=0.1~0.9) ceramics were sintered at 130$0^{\circ}C$, 135$0^{\circ}C$ and 140$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$r=6.8~8.3, Q.f$_{0}$=36000~77600. On the other hand, the temperature coefficients of resonant frequency($\tau$$_{f}$) were obtained in the properties of -62ppm/$^{\circ}C$ to -49ppm/$^{\circ}C$. In order to adjust the temperature coefficient of resonant frequency($\tau$$_{f}$), CaTiO$_3$was added in (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ceramics. 0.7Mg$_2$SiO$_4$-0.2ZnAl$_2$O$_4$-0.1CaTiO$_3$ceramics sintered at 135$0^{\circ}C$ for 2hr showed the excellent microwave dielectric properties of $\varepsilon$r=7.7, Q.f$_{0}$=32000, and $\tau$$_{f}$=-7.9 ppm/$^{\circ}C$.EX>.>.EX>.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.204-210
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• 2000

The control of dissolved aluminum concentration in the hot dip zinc galvanizing bath is greatly important in producing galvannealed steel sheets. The purpose of present study is to provide basic data for measurement of the aluminum concentration in site in hot dip zinc bath at the temperature of $460^{\circ}C\~500^{\circ}C$ using $CaF_2$ solid electrolyte sensor with three kinds of reference electrode. Good workability and stability of the sensor were confirmed with the $Bi+BiF_3$ reference electrode from the emf measurement. In order to measure the aluminum concentration in Zn-Al bath, the galvanic cell of fluorine ion was constructed with $CaF_2$ solid electrolyte as follows; $$(-)W|Zn-Al,\;AlF_3|CaF_2|Bi,BiF_3|W(+)$$. The emf measurement was made at the temperature of $460\pm10^{\circ}C$ in the Zn-Al bath. The following correlationship between aluminum concentration and emf was obtained by the least square regression analysis; $$E/mV=56.795log[\%Al]+1881.7\;R=0.9704$$,$$0.026wt\%{\leq}[\%Al]{\leq}0.984wt\%$$