• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.5 no.3
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• pp.171-177
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• 2007

This study suggested a new method to stabilize molten salt wastes generated from the pyre-process for the spent fuel treatment. Using conventional sol-gel process, $SiO_2-Al_2O_3-P_2O_5$ (SAP) inorganic material that is reactive to metal chlorides were prepared. In this paper, the reactivity of SAP with the metal chlorides at $650{\sim}850$, the thermal stability of reaction products and their leach-resistance under the PCT-A test method were investigated. Alkali metal chlorides were converted into metal aluminosilicate($LixAlxSi1-_xO_{2-x}$) and metal phosphate($Li_3PO_4\;and\;Cs_2AlP_3O_{10}$) While alkali earth and rare earth chlorides were changed into only metal phosphates ($Sr_5(PO_4)_3Cl\;and\;CePO_4$). The conversion rate was about $96{\sim}99%$ at a salt waste/SAP weight ratio of 0.5 and a weight loss up to $1100^{\circ}C$ measured by thermogravimetric analysis were below 1wt%. The leach rates of Cs and Sr under the PCT-A test condition were about $10^{-2}g/m^2\;day\;and\;10^{-4}g/m^2\;day$. From these results, it could be concluded that SAP can be considered as an effective stabilizer for metal chlorides and the method using SAP will give a chance to reduce the volume of salt wasteform for the final disposal through further researches.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.92-100
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• 1985

New N+N/P HLE solar cells with N+ surface charge accumulated layer in the emitter region are fabricated on the N/P Si epiwafer by incorporating high fixed positive charge density (Qss) at the Si-AR layer interface. Solar cells are classified into two categories, i.e, OCI and NCI Cell depending on AR layer, SiOl and Si3 N4/sioxynitride layer respectively. The distribution of Qss in the Si-AR layer interface is examined by C-V plot. It shows that the surface charge accumulated layer is formed more effectively in the NCI cell (Qss=1.79-1.84$\times$1012cm-2) than in the OCI cell (Qss=3.03~4.40$\times$1011 cm-2). The efficiency characteristics are evaluated under the JCR halogen lamp of 100 mw/cm2. The average (maximum) conversion efficiency for active area is 15.18 (15.46)% in the OCI cell and 16.31 (17.07)% in the NCI cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.133-133
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• 2011

최근 나노입자를 이용한 비휘발성 메모리 소자의 제작에 대한 연구가 진행되고 있다. 특히, 실리사이드 계열의 나노입자를 적용한 소자는 일함수가 크지만 실리콘 내의확산 문제를 가지고 있는 금속 나노입자와 달리 현 실리콘 기반의 반도체 공정 적용이 용이한 잇 점을 가지고 있다. 따라서 본 연구에서는 실리사이드 계열의 화합물 중에서 4.63 eV인 Vanadium Silicide ($V_3$Si) 박막을 열처리 과정을 통하여 수 nm 크기의 나노입자로 제작하였다. 소자의 제작은 p-Si기판에 5 nm 두께의 $SiO_2$ 터널층을 dry oxidation 방법으로 성장시킨 후 $V_3$Si 금속박막을 RF magnetron sputtering system을 이용하여 3~5 nm 두께로 tunnel barrier위에 증착시켰다. Rapid thermal annealing법으로 질소 분위기에서 $1000^{\circ}C$의 온도로 30초 동안 열처리하여 $V_3$Si 나노 입자를 형성 하였으며. 20 nm 두께의 $SiO_2$ 컨트롤 산화막층을 ultra-high vacuum magnetron sputtering을 이용하여 증착하였다. 마지막으로 thermal evaporation system을 통하여 Al 전극을 직경 200, 두께 200nm로 증착하였다. 제작된 구조는 metal-oxide-semiconductor구조를 가지는 나노 부유 게이트 커패시터 이며, 제작된 시편은 transmission electron microscopy을 이용하여 $V_3$Si 나노입자의 크기와 균일성을 확인했다. 소자의 전기적인 측정은 E4980A capacitor parameter analyzer와 Agilent 81104A apulse pattern generator system을 이용한 전기용량-전압 측정을 통해 전하저장 효과를 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.71-74
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• 1996

Ta$_2$O$_{5}$ film ale recognized as promising capacitor dielectric for future DRAM\`s. The electrical properties of Ta$_2$O$_{5}$films greatly depend on the heating condition. In the practical fabrication process, several annealing process, such as the annealing of Al in H$_2$(about 40$0^{\circ}C$) and reflow of BPSG (borophosphosilicate glass) film in $N_2$(about 80$0^{\circ}C$), exist after deposition of Ta$_2$O$_{5}$ film. In this paper, we describe the temperature effect on the electrical properties of W/Ta$_2$O$_{5}$/Si structure. The thin film of Ta$_2$O$_{5}$ and tungsten have been deposited on p-si(100) wafer using the sputtering system. The heating temperature was varied from 500 to 90$0^{\circ}C$ in $N_2$for 30min and The degree of temperature is 100\`C. In a log(J/E$^2$) Vs 1/E plot of typical I-V data, we find a linear relationship for the temperature of 500, $600^{\circ}C$ and as deposition. This could indicate Fowler-Nordheim tunneling as the dominant mode of current transports. However, we can not find a linear relationship for the temperature above $700^{\circ}C$. This could not indicate Fowler-Nordheim tunneling as the dominant mode of current transport. The high frequency (1MHz) capacitance-voltage (C-V) of W/Ta$_2$O$_{5}$/Si Capacitor were investigated on the basis of shift in the threshold voltage and dielectric constant. The magnitude of the threshold voltage and dielectric constant depends on the heating temperature, and increases with heating temperature.temperature.

• Journal of the Korean Ceramic Society
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• v.28 no.5
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• pp.365-372
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• 1991

LAS (lithium aluminosilicate) sol was synthesized using the hydrolysis-condensation reaction of TEOS, chelated Al(OBus)3 and Li-salt with H2O in alcohol (EtOH+2-Propanol) medium. Effects of important reaction parameters on the properties of sol and gel-derived LAS were examined. The crystallization of the sol-gel derived LAS with ${\beta}$-spodumene composition began at ∼600$^{\circ}C$, and a series of polymorphic transformations occurred as temperature was increased to 1100$^{\circ}C$: amorphous LAS\longrightarrowhexagonal LiAl(SiO3)2\longrightarrow${\beta}$-spodumene. Lowering Li content in the gel enhanced densification and retarded the crystallization significantly. Optimum reaction conditions of LAS sol formation for thin coating applications were derived from rheological measurements, and these can be summarized as: H2O/total alkoxides molar ratio=4, pH=∼2.5, and aging time of ∼250h.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.242-243
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• 2007

Highly transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Corning glass substrate using an Nd:YAG pulsed laser deposition technology. AZO thin films deposited with 650nm thickness showed the best electrical properties of the electrical resistivity of $4.6{\times}10^{-4}[{\Omega}{\cdot}cm]$, a carrier concentration of $9.3{\times}10^{20}[cm^{-3}]$, and a carrier mobility of $31[cm^2/V{\cdot}s]$. Besides, the optical transmittance spectra in visible region (200-800nm) of AZO thin films show an high average transmittance over 90%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1232-1236
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• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/oxidized PS/PS/P-Si/Al, where the p-Si is etched anisotropically to be prepared into a membrane-shape. We used alcohol gases vaporized from different alcohol (or ethanol) solutions mixed with pure water at 36$^{\circ}C$, similarly with an alcohol breath measurement to check drunk driving. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator-semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.592-597
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• 2004

Porous silicon(PS) has received much attention as a sensitive material of chemical sensors because of its large internal surface area. In this work, we fabricated gas-sensing devices based on the porous silicon layer which could be applicable to the measurement of blood alcohol content(BAC), and estimated their electrical properties. The structure of the sensor is similar to an MIS (metal-insulator-semiconductor) diode and consists of thin Au/oxidized PS/PS/p-Si/Al, where the p-Si substrate is etched anisotropically to reduce the thickness. We measured C-V curves from two types of the samples with the PS layer treated by the different anodization current density of 60 or 100 mA/cm$^2$, in order to compare the sensitivity. As a result, the magnitude and variation of capacitances from the devices with the PS formed under the current density of 100 mA/cm$^2$ were found to be more detectable due to the larger internal surface.

• Applied Biological Chemistry
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• v.38 no.5
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• pp.414-421
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• 1995

In order to establish informations important to the measurement of lipoxygenase (LOX) activity, providing conditions most favorable for its action and determining factors that inhibit activity, the influence of extraction buffer, substrate, pH, storage, temperature, NaCl, $CaCl_2$, other cations and antioxidants on LOX activity, and localization of LOX in cucumber tissues were carried out. The most favored substrate for LOX was linolenic acid followed by linoleic and arachidonic acids. LOX activity in both peel and mesocarp tissue extracts was maximum at pH 5.5 and relatively stable at $40^{\circ}C\;and\;50^{\circ}C$ temperature. The condition of 0.2 M NaCl with pH 5.0 was observed to provide optimum LOX stability. The enzyme activity was reduced by addition of cations, $Mn^{2+},\;Cu^{2+}\;or\; Al^{3+}$, except $Ca^{2+}$ which stimulated activity of LOX. Butylated hydroxy anisole (BHA) and propyl gallate decreased LOX activity with increasing concentration. Cucumber peel had higher activity than other tissues, locule or mesocarp, of cucumber.