• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1061-1062
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• 2006

This paper presents a new approach for analyzing the microstructure of $SiC_p$-reinforced aluminum matrix composites from digital images. Various samples of aluminum matrix composite were fabricated by hot pressing the powder mixtures with certain volume and size combinations of pure Al and SiC particles. Microstructures of the samples were analyzed by computer-based image processing methods. Since the conventional methods are not suitable for separating phases of such complex microstructures, some new algorithms have been developed for the improved recognition and characterization of the particles in the metal matrix composites.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.278-279
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• 2006

The increasing demand for automotive industries to reduce the weight of the vehicles has led to a growing usage of Al alloy powder metallurgy (P/M) parts. In order to control the sintered microstructure and mechanical properties of the aluminium alloy powder metallurgical (P/M) parts, it is essential to establish a fundamental understanding of the microstructural development during the sintering process. This paper presents a detailed study of the effect of temperature and initial starting materials on the evolution of microstructure during the sintering of Al-Cu-Mg-Si blends for PM.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.291-297
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• 1996

The surface properties of AI(Si, Cu) alloy film after plasma etching using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched AI(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxidized (partially chlorinated) states, copper shows Cu metallic states and Cu-Cl$_{x}$(x$_{x}$ (x$_{x}$ (1

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• Korean Journal of Materials Research
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• v.4 no.7
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• pp.759-766
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• 1994

Our investigation aimed to reduce the leakage current of $Ta_2O_5$ thin film capacitor by layering SnOz thin film layer under Ta thin film, thereby supplying extra oxygen ions from the $SnO_{2}$ underlayer to enhance the stoichiometry of $Ta_2O_5$ during the oxidation of Ta thin film. Tantalum was evaporated by e-beam or sputtered on p-Si wafers with various deposition temperatures and was oxidized by dry--oxygen at the temperatures between $500^{\circ}C$ and $900^{\circ}C$. Aluminum top and bottom electrodes were formed to make Al/$Ta_2O_5$/p-Si/Al or $Al/Ta_2O_5/SnO_2$p-Si/AI MIS type capacitors. LCR meter and pico-ammeter were used to measure the dielectric constants and leakage currents of the prepared thm film capacitors. XRD, AES and ESCA were employed to confirm the crystallization of the thin f~lm and the compositions of the films. Dielectric constant of $Ta_2O_5$ thin film capacitor with $SnO_{2}$ underlayer was found to be about 200, which is about 10 times higher than that of $Ta_2O_5$ thin film capacitor without $SnO_{2}$ underlayer. In addition, higher oxidation temperatures increased the dielectric constants and reduced the leakage current. Higher deposition temperature generally gave lower leakage current. $Ta_2O_5/SnO_2$ capacitor deposited at $200^{\circ}C$ and oxidized at $800^{\circ}C$ showed significantly lower leakage current, $10^{-7}A/\textrm{cm}^2$ at $4 \times 10^{5}$V/cm, compared to the one without $SnO_{2}$ underlayer. XRD showed that $Ta_2O_5$ thin film was crystallized above $700^{\circ}C$. AES and ESCA showed that initially the $SnO_{2}$, underlayer supplied oxygen ions to oxidize the Ta layer, however, Sn also diffused into the Ta thin film layer to form a new $Ta_xSn_YO_Z$ , ternary oxide layer after all.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2004.11a
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• pp.114-114
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.43-44
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• 2008

PECVD 방식에 의거 low-k 유전상수를 갖는 층간 절연막 (ILD)를 제작하였다. 전구체 BTMSM 액체를 기화하여 16sccm 에서부터 1 sccm씩 증가하면서 25sccm 까지 p-Si[100] 기판위에 유량비를 조절하였으며 60 sccm으로 일정산소 $O_2$ 가스를 반응 챔버에 도달하도록 하였다. 제작된 시편의 구성성분은 FTIR의 흡수선으로 확인하였고, 알루미늄 전극을 구현한 MIS (Al/SiOCH/p-si(100)) 구조의 커패시터를 가지고 정전용량-전압 (C-V) 특성을 측정하여 유전상수를 계산하였다. BTMSM/$O_2$에 의한 층간절연막의 k ~ 2 근방의 저유전상수는 유량비에 민감하게 의존되고 열처리에 의하여 $CH_3$의 소멸 및 Si-O-Si(C) 성장하는 효과에 의하여 더 낮아짐을 확인할 수 있었다. 또한 상온 및 대기압에서 공기 중에 노출시켜 자연 산화과정을 겪은 시편들의 유전상수는 전체적으로 증가하였지만, 열처리한 박막이 상대적으로 안정화된 것을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.122.2-122.2
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• 2015

n-type 실리콘은 p-type과 비교하여 더 높은 소수캐리어 lifetime 으로 금속 불순물에 대하여 더 좋은 내성을 갖는다. 고효율 실리콘 태양전지를 위하여 p-type 웨이퍼를 n-type으로 교체하여 빛을 조사했을 때, 광전자들이 형성되어 p-type과 비교하여 더 좋은 lifetime 안정성을 갖는다. n-type 태양전지의 전면 전극은 AgAl paste로 형성하였다. AgAl 페이스트는 소성 온도와 밀접하게 관련되어 전극의 접합 깊이에 영향을 미친다. p+ emitter 층에 파고드는 금속 접촉의 최적화된 깊이는 접촉 저항에 영향을 미치는 중요한 요소이다. 본 연구에서는 소성 조건을 변화시킴으로써, 금속 깊이의 효과적인 형성을 위한 소성 조건을 최적화하였다. $670^{\circ}C$ 이하의 온도에서 소성을 진행 하였을 때, 충분한 접촉 깊이를 형성하지 못하여 높은 접촉저항을 갖는다. 소성 온도가 증가함에 따라, 접촉 저항은 감소하였다. 최적 소성 온도 $865^{\circ}C$에서 측정된 접촉저항은 $5.99mWcm^2$이다. $900^{\circ}C$ 이상에서 contact junction은 emitter를 통과하여 실리콘과 결합하였다. 그 결과로 접촉저항 shunt가 발생한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.41-46
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• 2009

The low dielectric SiOCH films were deposited on p-type Si(100) substrates through the dissociation of BTMSM $(((CH_3)_3Si)_2CH_2)$ precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 to 60 sccm by 2 sccm step into reaction chamber but with the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed large reduction of the maximum capacitance yielding low dielectric constant owing to reductions of surface charge density. After exposure at room temperature and atmospheric pressure, dielectric constant of SiOCH films was totally increased. However, annealed SiOCH thin films were more stable than as-deposited SiOCH thin films for natural oxidation.