• Title/Summary/Keyword: $Ag_2Se$

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Investigation of thermal Characteristics with Amorphous Chalcogenide Thin Film for Programmable Metallization Cell (PMC 응용을 위한 비정질 칼코게나이드 박막의 열적특성)

  • Ju, Long-Yun;Nam, Ki-Hyeon;Choi, Hyuk;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1331-1332
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    • 2007
  • In the present works, we investigate the thermal characteristics on Ag/$As_{2}S_{3}$ and Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film structure for PMC (Programmable Metallization Cell).As the results of resistance change with the temperature on Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film, the resistance was abruptly dropped from the initial resistance of 1.32 M ${\Omega}$ to the saturated value of 800 ${\Omega}$ at $203^{\circ}C$. On the other hand, the resistance increased to 1.3 $M{\Omega}$ at $219^{\circ}C$.

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The Photoinduced Birefringence of Chalcogenide Thin Film by the Ag Polarized-photodoping (Ag 편광-광도핑에 의한 칼코게이나이드 박막의 광유기 복굴절)

  • 장선주;박종화;박정일;정홍배
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.2
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    • pp.139-144
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    • 2001
  • In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.

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Biogeochemistry of Metal and Nonmetal Elements in the Surface Sediment of the Gamak Bay (가막간 표층퇴적물 중의 금속 및 비금속 원소의 생지화확적 분포특성)

  • Kim, Pyoung-Joong;Shon, Sang-Gyu;Park, Soung-Yun;Kim, Sang-Soo;Jang, Su-Jeong;Jeon, Sang-Baek;Ju, Jae-Sik
    • Journal of the Korean Society of Marine Environment & Safety
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    • v.18 no.2
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    • pp.67-83
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    • 2012
  • In order to evaluate die geochemical characteristics of sediment in a semi-enclosed bay used as shellfish and fish farming area, the concentrations of metallic(V, Cr, Mn, Fe, Co. Ni, Cu, Zn, Ag, Cd, Hg, Ph, As) and non-metallic(P, Se) elements and uranium were measured in the surface sediment samples collected from 19 stations of Gamak Bay in April 2010. Metal contamination status in the sediments were also evaluated using the sediment quality guidelines(SQGs) proposed by the National Oceanic and Atmospheric Administration(NOAA) and the enrichment factor(EF). The concentrations of elements in sediment were mainly controlled by quartz-dilution effect(V, Cr, Fe, Co and Ni), the dilution effect of organic matter(Cd and U), and metal redistribution by the decomposition of organic matter(Mn, Ag, As, and Se). The concentrations of metals, except As and Ni, in sediments from all sampling stations were lower than ERL values of NOAA. Conclusively, the surface sediment of Gamak Bay was slightly polluted with Ni, Ag, Cd, and Cd but was not polluted with other elements on the basis of EF results. Our results suggest that the surface sediment in Gamak Bay is not polluted by metallic elements.

Electromagnetic Shielding Characteristics of Polyaniline and Its Mixtures (폴리아닐린과 그 혼합물의 전자기파 차폐특성)

  • 박종수;임인호;최병수
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.2
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    • pp.293-298
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    • 2001
  • EB-NMP free standing film is manufactured from NMP solution of polyaniline(emeraldine base EB). Also ES(emeraldine salt EB . HCl) film is manufactured by doping of EB-NMP film with 1 mole HCI aqueous solution. And EB-mixture films containing conductor(carbon black, graphite, Ag etc.) are prepared, In this study, electromagnetic interference shielding efficiency(EMI SE) of ES free standing film ($\sigma$=5 S/cm, t=0.14mm) is 23~25 dB in the frequency range of 10 MHz~1 GHz. ES-mixture(carbon black, graphite, Ag etc.) films, polyaniline film doped camphorsulfonic acid(CSA) show higher EMI SE(30~34 dB, 36~42 dB, 44~52 dB, 34~43 dB) property than that of ES free standing film, respectively.

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Interfacial Adhesion between Screen-Printed Ag and Epoxy Resin-Coated Polyimide (에폭시수지가 도포된 폴리이미드와 스크린 프린팅 Ag 사이의 계면접착력 평가)

  • Park, Sung-Cheol;Kim, Jae-Won;Kim, Ki-Hyun;Park, Se-Ho;Lee, Young-Min;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.1
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    • pp.41-46
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    • 2010
  • The interfacial adhesion strengths between screen-printed Ag film and epoxy resin-coated polyimide were evaluated by $180^{\circ}$ peel test method. Measured peel strength value was initially around $164.0{\pm}24.4J/m^2$, while the heat treatment during 24h at $120^{\circ}C$ increase peel strength up to $220.8{\pm}19.2J/m^2$. $85^{\circ}C/85%$ RH temperature/humidity treatment decrease peel strength to $84.1{\pm}50.8J/m^2$, which seems to be attributed to hydrolysis bonding reaction mechanism between metal and adhesive epoxy resin coating layer.

Characteristics of Ag, Cu films deposited by magnetron sputtering after the annealing temperature (마그네트론 스퍼터링을 이용한 초박막 Ag, Cu 금속 박막의 열처리에 따른 물질 특성 변화)

  • Choe, Min-Seung;Gang, Se-Won;Kim, Dong-Ho;Lee, Geon-Hwan;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.177-177
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    • 2013
  • DC 마그네트론 스퍼터링을 이용하여 열처리 온도 변화에 따른 금속 박막의 물성 변화 및 특성 분석을 위해 유리기판 위에 박막의 두께 10 nm로 증착하여 열처리 공정을 진행하였다. 상온에서 Ag 박막의 비저항은 평균 $6.9{\times}10^{-6}{\Omega}.cm$로 Cu 박막의 $4.9{\times}10^{-5}{\Omega}.cm$보다 낮은 전기 전도성을 가지는 것을 확인 할 수 있었다. 또한 Ag 박막은 열처리 온도의 증가와 관계없이 전기전도성에 대한 큰 차이가 없으나 Cu 박막의 경우 열처리 온도 $150^{\circ}C$에서 $2.5{\times}10^{-4}{\Omega}.cm$로 비저항의 변화를 가졌다. 광학적 특성으로 Ag 박막은 58%에서 42%로 감소하는 반면 Cu 박막은 50%에서 75%이상의 광 투과도를 가지는 것을 확인 하였다.

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Crystal Structures of Dehydrated $Ag^{+}\;and\;Ca^{2+}$ Exchanged Zeolite A, $Ag_{3.3}Ca_{4.35}$-A and of Its Ethylene Sorption Complex

  • Se Bok Jang;Jong Yul Park;Yunghee Oh Kim;Yang Kim
    • Bulletin of the Korean Chemical Society
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    • v.14 no.1
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    • pp.82-86
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    • 1993
  • Two crystal structures of dehydrated $Ag_{3.3}Ca_{4.35}-A ({\alpha} = 12.256(2){\AA})$ and of its ethylene sorption complex (${\alpha} = 12.259(2){\AA}$) have been determined by single-crystal X-ray diffraction techniques in the cubic space group Pm3m at 21(l)$^{\circ}$C. Both crystals were dehydrated at 360$^{\circ}$C and $2{\times}10^{-6}$ Torr for 2 days and one crystal was treated with 200 Torr of ethylene at 24(2)$^{\circ}$C. The structures were refined to final error indices, $R_1$=O.065 and $R_2$ = 0.088 with 202 reflections and $R_1$=0.049 and $R_2$ = 0.044 with 259 reflections, respectively, for which I>3${\sigma}$(I). In these structures, all Ag$^+$ and Ca$^{2+}$ ions are located on two and three different threefold axes associated with 6-ring oxygens, respectively. In $Ag_{3.3}Ca_{4.35}-A{\cdot}6.65\;C_2H_4,\;3.3\;Ag^+\;and\;3.35\;Ca^{2+}$ ions are recessed 1.09 ${\AA}$ and 0.21 ${\AA}$, respectively, into the large cavity from the (111) plane at O(3). Each Ag$^+$ and Ca$^{2+}$ ion in the large cavity forms a complex with one $C_2H_4$$^{2+}$ ions and ethylene molecules are longer than those between Ag$^+$ ions and ethylene molecules.

Influence of Thermal Aging at the Interface Cu/sn-Ag-Cu Solder Bump Made by Electroplating (전해도금에 의해 형성된 Sn-Ag-Cu 솔더범프와 Cu 계면에서의 열 시효의 영향)

  • Lee, Se-Hyeong;Sin, Ui-Seon;Lee, Chang-U;Kim, Jun-Gi;Kim, Jeong-Han
    • Proceedings of the KWS Conference
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    • 2007.11a
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    • pp.235-237
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    • 2007
  • In this paper, fabrication of Sn-3.0Ag-0.5Cu solder bumping having accurate composition and behavior of intermetallic compounds(IMCs) growth at interface between Sn-Ag-Cu bumps and Cu substrate were studied. The ternary alloy of the Sn-3.0Ag-0.5Cu solder was made by two binary(Sn-Cu, Sn-Ag) electroplating on Cu pad. For the manufacturing of the micro-bumps, photo-lithography and reflow process were carried out. After reflow process, the micro-bumps were aged at $150^{\circ}C$ during 1 hr to 500 hrs to observe behavior of IMCs growth at interface. As a different of Cu contents(0.5 or 2wt%) at Sn-Cu layer, behavior of IMCs was estimated. The interface were observed by FE-SEM and TEM for estimating of their each IMCs volume ratio and crystallographic-structure, respectively. From the results, it was found that the thickness of $Cu_3Sn$ layer formed at Sn-2.0Cu was thinner than the thickness of that layer be formed Sn-0.5Cu. After aging treatment $Cu_3Sn$ was formed at Sn-0.5Cu layer far thinner.

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