• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.06a
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• pp.313-318
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• 2001

The sliding wear behavior of Plasma-Sprayed Al$_2$O$_3$-TiO$_2$ Coating against Cemented Carbide were Investigated using a pin on disk type tester. The experiment was conducted using Al$_2$O$_3$-TiO$_2$ Coaling as pin material and Cemented Carbide as disk material and different operating conditions, at room temperature under a dry conditions. The results showed that the type B(250kw power) appeared average wear rate Is lowed than type A(80kw power). The specific wear rate of Specimen A1 Increased with normal load. But The specific wear rate of Specimen B1 decreased with normal load. Average wear rate of specimen A3, B3 are lowed than other but the sliding wear mechanism of edge were rough.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.933-938
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• 2004

The clinkerbility and the behaviour of formation of $3CaO{\cdot}Al_{2}O_3$ were studied using the mixture of waste oyster shell and spent oil-refining catalyst mainly by the mineral and microstructural observation. By virtue of the formation of $12CaO{\cdot}7Al_{2}O_3$ at relatively low temperature and its successive reaction with CaO, the $3CaO{\cdot}Al_{2}O_3$ clinkers were formed easily without affection of minor constituents contained in oyster shell. Thus clinkers were formed at $1400^{\circ}C$ directly but began to melt incongruently at higher temperature above that. Aluminium hydroxide, however, was not desirable as an aluminous raw materials of the clinker because rapid melting occurs before $3CaO{\cdot}Al_{2}O_3$ forms main clinker mineral.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.309-315
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• 1982

$FeAl_2O_4$ was formed from the starting material of $Fe_2O_3$ and $Al_2O_3$ by controlling the oxygen partial pressure using $H_2-CO_2$ gas mixture, over the temperature range of 800~120$0^{\circ}C$. The formation mechanism of $FeAl_2O_4$ was found to be a second order chemical reaction, and the activation energy of formation was observed as 39.97 kcal/mole. Vaporization behavior of $FeAl_2O_4$ under $CO_2$ atmosphere was observed over the temperature range of 800~120$0^{\circ}C$. $FeAl_2O_4$ was vaporized by a second order chemical reaction and the activation energy was found to be 21.8kcal/mole. Electrical conductivity of $FeAl_2O_4$ was also measured.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.785-790
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• 2003

We have synthesized some phosphors in the system $CaO-Y_2$$O_3$-$Al_2$$O_3$by combinatorial polymerized-complex method. Composition and synthetic temperature of phosphors in the library was screened from the emission intensities of individual samples under VUV excitation. In $Tb^{ 3＋}$-activated $CaO-Y_2$$O_3$-$Al_2$$O_3$, green phosphors showing good intensity were found to be X$O_3$$O_{7}$, CaYA1O$_4$, YA1O$_3$, $Y_3$$Al_{5}$$O_{12}$, $Y_4$$A1_2$$O_{9}$ .

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.461-464
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• 1987

With the fabrication of Al-$Al_2O_3$-n(p) type Si devices, the analysis and measurement of various characteristics, this study presented the electric physical property theory for the charge distribution of MAS device $Al_2O_3$ films, and inquired out the devices available. In order to study them, Al-(450A)$Al_2O_3$-n(p) type Si was the main objects in the study. They were examined through carrier injection, C-V curves of devices on time, ${\Delta}V_{FB}$-t curves, I-V curves and $Al_2O_3$ film's breakdown characteristics.

• Journal of the Korean Chemical Society
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• v.35 no.4
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• pp.422-426
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• 1991

In order to synthesize high-purity alpha alumina fine powder, the aluminum hydroxide and ammonium aluminum sulfate(alum) precursor were prepared from natural alumino-silicate(halloysite). The thermal decomposition mechenism for both precursors was elucidated by DTA/TG, XRD and IR analysis. The microstructure, specific surface area and purity of ${\alpha}-Al_2O_3$ were characterized by SEM, and BET analysis. The particle size of ${\alpha}-Al_2O_3$ was determined to be ${\phi}$ = 0.1∼0.5 ${\mu}$m. However, the specific surface area for the alum derived ${\alpha}-Al_2O_3$(89.0 m$^2$/g) was extremely higher than that for the aluminum hydroxide derived one(7.3 m$^2$/g).

• Electrical & Electronic Materials
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• v.3 no.3
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• pp.242-252
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• 1990

본 논문에서는 $Al_{2}$ $O_{3}$박막을 GAIVB(Gas Assisted and Ionized Vapour Beam)법에 의해 저온에서 300.angs.-1400.angs.의 두께로 성장하여 그 조건을 제시하였다. 아울러 Al-Al$_{2}$ $O_{3}$-Si의 MOS구조를 제작하여 Breakdown 현상을 고찰하고 그 결과를 분석 제시함으로써 GAIVB법에 의해 저온으로 형성된 $Al_{2}$ $O_{3}$막의 활용 가능성을 보고하였다. 한편, 본 연구에서 제작한 $Al_{2}$ $O_{3}$ 박막의 저항율은 막의 두께 100.angs.-1000.angs.인 시료소자에서 $10^{8}$ ohm-cm와 $10^{13}$ ohm-cm로 측정되었고 비유전율은 8.5-10.5, 절연파괴강도는 6~7 MV/cm(+바이어스)와 11~12MV/cm(-바이어스)이었다.

• Journal of the Mineralogical Society of Korea
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• v.22 no.4
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• pp.343-352
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• 2009

High-resolution Solid-state NMR provides element specific and quantitative information and also resolves, otherwise overlapping atomic configurations in multi-component non-crystalline silicates. Here we report the preliminary results on the effect of composition on the structure of CMAS (CaO-MgO-$Al_2O_3-SiO_2$) silicate glasses, as a model system for basaltic magmas, using the high-resolution 1D and 2D solid-state NMR. The $^{27}Al$ MAS NMR spectra for the CMAS silicate glasses show that four-coordinated Al is predominant, demonstrating that $Al^{3+}$ is network forming cation. The peak position moves toward lower frequency about 4.7 ppm with increasing $X_{MgO}$ due to an increase in $Q^4$(4Si) fraction with increasing Si content, indicating that Al are surrounded only by bridging oxygen. $^{17}O$ MAS NMR spectra for $CaAl_2SiO_6$ and $CaMgSi_2O_6$ glasses qualitatively suggest that NBO fraction in the former is smaller than that in $CaMgSi_2O_6$ glasses. As $^{17}O$ 3QMAS NMR spectrum of model quaternary aluminosilicate glass resolved distinct bridging and non-bridging oxygen environments, atomic structure for natural magmas can also be potentially probed using high-resolution 3QMAS NMR.

• Journal of the Korean Institute of Gas
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• v.20 no.2
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• pp.1-9
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• 2016

Combined removal of n-heptane and carbon monoxide (CO) using a plasma-catalytic process was investigated. The performance of the plasma-catalytic process was compared with that of the catalyst-alone process to characterize the decomposition of n-heptane and CO with the operation parameters such as the type of catalyst, reaction temperature, and discharge power. From several sets of experiments, it was found that the decomposition efficiency of n-heptane mainly depended on the specific input energy rather than the reactor temperature, whereas the oxidation of CO on both the energy density and the reaction temperature. The results conducted over several metal oxide catalysts exhibited that the decomposition efficiency of n-heptane was in the order: $Pd/{\gamma}-Al_2O_3$ > $Ru/{\gamma}-Al_2O_3{\approx}Ag/{\gamma}-Al_2O_3$. Especially, $Pd/{\gamma}-Al_2O_3$ catalyst did hardly generate CO as a byproduct during the decomposition of n-heptane under an appropriate condition, revealing $CO_2$ selectivity of nearly 100%. The CO oxidation efficiency was largely affected by the type of catalyst ($Pd/{\gamma}-Al_2O_3$ > $Ru/{\gamma}-Al_2O_3$ > $Ag/{\gamma}-Al_2O_3$). At temperatures below $180^{\circ}C$, the plasma-catalytic process was more effective in the oxidation of CO, while above $180^{\circ}C$, the catalytic process resulted in slightly higher CO oxidation efficiency.