• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.294-297
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• 2012

In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (AFM-LO) has been performed on the implanted samples, with and without activation anneal, using an applied bias (~25 V). It has been clearly shown that the post-implantation annealing process at $1,650^{\circ}C$ has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.577-580
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• 2005

Surface quality of a micro-processed sample with laser has been investigated by using of scanning confocal microscope(SCM) and atomic force microscope(AFM). Samples are bump electrodes and ITO glass of LCD module used in a mobile phone and a wafer surface scribed by UV laser. A image of $140\times120{\mu}m^2$ is obtained within 1 second by SCM because scan speed of a x-axis and y-axis are 1kHz and 1Hz, respectively. AFM is able to measure correctly hight and width of ITO and scribing depth and width of a wafer with a resolution less than 300 . However, the scan speed is slow and it is difficult to distinguish a surface composed of different nm kinds of materials. Results show that SCM is preferable to obtain a image of a sample composed of different kinds of material than AFM because the intensity of a reflected light from surface is different from each material.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.4 s.181
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• pp.52-59
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• 2006

Surface qualities of a micro-processed sample with a pulse laser have been investigated by making use of scanning confocal microscope(SCM) and atomic force microscope(AFM). Samples are bump electrodes and ITO glass of LCD module used in a mobile phone and a wafer surface scribed by UV laser. A image of $140{\times}120{\mu}m^2$ is obtained within 1 second by SCM because scan speed of a x-axis and y-axis are 1kHz and 1Hz, respectively. AFM is able to correctly measure the hight and width of ITO, and scribing depth and width of a wafer with a resolution less than 300nm. However, the scan speed is slow and it is difficult to distinguish a surface composed of different kinds of materials. Results show that SCM is preferable to obtain a image of a sample composed of different kinds of material than AFM because the intensity of a reflected light from the surface is different for each material.

• Applied Microscopy
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• v.52
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• pp.1.1-1.8
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• 2022

As semiconductor device architecture develops, from planar field-effect transistors (FET) to FinFET and gate-all-around (GAA), there is an increased need to measure 3D structure sidewalls precisely. Here, we present a 3-Dimensional Atomic Force Microscope (3D-AFM), a powerful 3D metrology tool to measure the sidewall roughness (SWR) of vertical and undercut structures. First, we measured three different dies repeatedly to calculate reproducibility in die level. Reproducible results were derived with a relative standard deviation under 2%. Second, we measured 13 different dies, including the center and edge of the wafer, to analyze SWR distribution in wafer level and reliable results were measured. All analysis was performed using a novel algorithm, including auto fattening, sidewall detection, and SWR calculation. In addition, SWR automatic analysis software was implemented to reduce analysis time and to provide standard analysis. The results suggest that our 3D-AFM, based on the tilted Z scanner, will enable an advanced methodology for automated 3D measurement and analysis.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.3
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• pp.537-543
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• 2002

This paper examines a new in-process measurement system for the measurement of micro-defects on the surfaces of brittle materials by using the AFM (Atomic Force Microscopy). A new AFM scanning stage that can also perform nano-scale bending of the sample was developed by adding a bending unit to a commercially available AFM scanner. The bending unit consists of a PZT actuator and sample holder, and can perform static and cyclic three-point bending. The true bending displacement of the bending unit is approximately 1.8mm when 80 volts are applied to the PZT actuator. The frequency response of the bending unit and the stress on the sample were also analyzed, both theoretically and experimentally. Potential surface defects of the sample were successfully detected by this measurement system. It was confirmed that the number of micro-defects on a scratched surface increases when the surface is subjected to a cyclic bending load.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.411-416
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• 2006

A new reading technology for the ultra-high density data storage device utilizing AFM technology was proposed and its experimental results were discussed in this paper. For the experiments, an about $2{\mu}m$ thick conductive polymer layer was spin-coated on the heavily doped n-type Si wafer and an about $0.1{\mu}m$ thick PMMA layer was also been spin-coated on it. After then, the $5{\times}5$ memory way was fabricated by making indents on the surface of the wafer with the heated AFM tip, and the data reading was performed by scanning the surface with the tip biased at 10 V and the measuring the current flowing out at the end of the tip. The experimental results clearly showed that the new data reading technology worked superbly. The current measured was about 0.92 pA at the cell with the indent, and it was not only below 0.31 pA at the cell without the indent, but also at the cell where the indent was erased.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.208.1-208
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• 2002

• Journal of Magnetics
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• v.13 no.1
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• pp.1-6
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• 2008

MacDonald and co-workers recently predicted that high current densities could affect the magnetic order of antiferromagnetic (AFM) multilayers, in ways similar to those that occur in ferromagnetic (F) multilayers, and that changes in AFM magnetic order can produce an antiferromagnetic Giant Magnetoresistance (AGMR). Four groups have now studied current-driven effects on exchange bias at F/AFM interfaces. In this paper, we first briefly review the main predictions by MacDonald and co-workers, and then the results of experiments on exchange bias that these predictions stimulated.

• Journal of the Korean Applied Science and Technology
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• v.26 no.1
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• pp.102-108
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• 2009

Behaviors of saturated fatty acid halides (CI4, C16, C18) were measured by LB method when the molecules were stimulated by pressure. The saturated fatty acid halides were deposited on the indium tin oxide(lTO) glass by the LB method. The average organic ultra thin film size and the surface roughness of the fatty acid halides thin films were investigated using AFM. It was found that AFM images show small surface roughness ($2.5{\sim}5.0\;nm$) and the organic ultra thin film size of $2.5{\sim}12\;nm$. Both aggregations and pin-holes were also seen on the AFM images. However we found that the surface roughness. These effects seem to be reasonable to be related to the increase of the organic ultra thin film size of fatty acid halides.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.7
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• pp.1047-1054
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• 2001

Atomic Force Microscope (AFM) was used to study cross sectional profiles and dimensions of fatigue striations in 2017-T351 aluminum alloy. Their widths(SW) and heights (SH, SH(sub)h, SH(sub)ι) were measured from the cross sectional profiles of three-dimension AFM images. The following results that will be helpful to understand the fatigue crack growth mechanism were obtained. (1) The relation of SH=$\alpha$(SW)(sup)1.2 was obtained. (2) The ratio of the striation height to its width SH/SW, SH(sub)h/SW and SH(sub)ι/SW did not depend on the stress intensity factor range ΔK and the stress ratio R( =P(sub)min/P(sub)max = K(sub)min/K(sub)max). (3) Effect of precipitate on the morphology of striation was changed by the relative dimensional difference between the striation width SW and the precipitates. From these results, the applicability of the AFM to nano-fractography is discussed.