• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.13-20
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• 2008

In this paper, an 1.8V 12-bit 10MSPS CMOS A/D converter (ADC) is described. The architecture of the proposed ADC is based on a folding and interpolation using an even folding technique. For the purpose of improving SNR, cascaded-folding cascaded-interpolation technique, distributed track and hold are adapted. Further, a digital encoder algorithm is proposed for efficient digital process. The chip has been fabricated with $0.18{\mu}m$ 1-poly 4-metal n-well CMOS technology. The effective chip area is $2000{\mu}m{\times}1100{\mu}m$ and it consumes about 250mW at 1.8V power supply. The measured SNDR is about 46dB at 10MHz sampling frequency.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2011.06a
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• pp.197-197
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• 2011

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38B no.6
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• pp.427-434
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• 2013

In this paper, the design and layout of a 2.5 Gbps arrayed VCSEL driver for optical transceiver having arrayed multi-channel of integrating module is confirmed. In this paper, a 4 channel 2.5 Gbps VCSEL (vertical cavity surface emitting laser) driver array with automatic optical power control is implemented using $0.18{\mu}m$ CMOS process technology that drives a $1550{\mu}m$ high speed VCSEL used in optical transceiver. To enhance the bandwidth of the optical transmitter, active feedback amplifier with negative capacitance compensation is exploited. We report a distinct improvement in bandwidth, voltage gain and operation stability at 2.5Gbps data rate in comparison with existing topology. The 4-CH chip consumes only 140 mW of DC power at a single 1.8V supply under the maximum modulation and bias currents, and occupies the die area of $850{\mu}m{\times}1,690{\mu}m$ excluding bonding pads.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2369-2379
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• 2013

A CMOS x-ray line scan sensor which is used in both medical imaging and non-destructive diagnosis is designed. It has a pixel array of 512 columns ${\times}$ 4 rows and a built-in DC-DC converter. The pixel circuit is newly proposed to have three binning modes such as no binning, $2{\times}2$ binning, and $4{\times}4$ binning in order to select one of pixel sizes of $100{\mu}m$, $200{\mu}m$, and $400{\mu}m$. It is designed to output a fully differential image signal which is insensitive to power supply and input common mode noises. The layout size of the designed line scan sensor with a $0.18{\mu}m$ x-ray CMOS image sensor process is $51,304{\mu}m{\times}5,945{\mu}m$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.77-83
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• 2009

In this paper, a selective feedback low-noise amplifier (LNA) has been realized in a $0.18{\mu}m$ CMOS technology to cover a number of wireless multi-standards. By exploiting notch filter, the SF-LNA demonstrates the measured results of the power gain (S21) of 11.5~13dB and the broadband input/output impedance matching of less than -10dB within the frequency bands of 820~960MHz and 1.5~2.5GHz, respectively. The chip dissipates 15mW from a single 1.8V supply, and occupies the area of $1.17\times1.0mm^2$.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.142-147
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• 2012

This paper presents a mixed-mode CMOS duty-cycle corrector (DCC) circuit that has a dynamic frequency scaling (DFS) counter and coarse and fine tuning adjustments. A higher duty-cycle correction accuracy and smaller jitter have been achieved by utilizing the DFS counter that reduces the bit-switching glitch effect of a digital to analog converter (DAC). The proposed circuit has been designed using a 0.18-${\mu}m$ CMOS process. The measured duty cycle error is less than ${\pm}1.1%$ for a wide input duty-cycle range of 25-75% over a wide freqeuncy range of 0.5-1.5 GHz.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.83-89
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• 2014

A ku-band complementary cross-coupled differential voltage controlled oscillator is designed, measured and fabricated using $0.18-{\mu}m$ CMOS technology. A 2.4GHz of very wide frequency tuning at oscillating frequency of 14.5GHz is achieved with presented circuit topology and MOS varactors. Measurement results show -1.66dBm output power with 18mA DC current drive from 3.3V power supply. When 5V is applied, the output power is increased to 0.84dBm with 47mA DC current. -74.5dBc/Hz phase noise at 100kHz offset is measured. The die area is $1.02mm{\times}0.66mm$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.4
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• pp.897-904
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• 2011

In this paper, a novel circuit topology of a low-noise amplifier tunable at 1.8GHz band for PCS and 2.4GHz band for WLAN using a CMOS active inductor is proposed. This circuit topology to reduce higher noise figure of the low noise amplifier with the CMOS active load is analyzed. Furthermore, the noise canceling technique is adopted to reduce more the noise figure. The noise figure of the proposed circuit topology is analyzed and simulated in $0.18{\mu}m$ CMOS process technology. Thus, the simulation results exhibit that the noise performance enhancement of the tunable low noise amplifier is about 3.4dB, which is mainly due to the proposed new circuit topology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.9
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• pp.74-80
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• 2009

This paper describes a $2{\sim}6GHz$ CMOS frequency synthesizer that employs only one LC-tank voltage controlled oscillator (VCO). For wide-band operation, optimized LO signal generator is used. The LC-tank VCO oscillating in $6{\sim}8GHz$ provides the required LO frequency by dividing and mixing the VCO output clocks appropriately. The frequency synthesizer is based on a fractional-N phase locked loop (PLL) employing third-order 1-1-1 MASH type sigma-delta modulator. Implemented in a $0.18{\mu}m$ CMOS technology, the frequency synthesizer occupies the area of $0.92mm^2$ with of-chip loop filter and consumes 36mW from a 1.8V supply. The PLL is completed in less than $8{\mu}s$. The phase noise is -110dBC/Hz at 1MHz offset from the carrier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.144-148
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• 2005

In this paper, we have proposed VGA fur MB-OFDM UWB application using $CMOS\;0.18\;{\mu}m$ technique. The proposed VGA can vary power gain from 45 dB to -6 dB and 3 dB band width is more than 264 MHz. It has 3-stage cascade structure and DC offset cancellation. It consumes less, than 4 mA for 1.8 V bias voltage.