• Title/Summary/Keyword: ${ZnCo_2}{O_4}$spinel

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Formation and Color of the Spinel Solid Solution in CoO-ZnO-$Fe_2O_3$-$TiO_2$-$SnO_2$ System (CoO-ZnO-$Fe_2O_3$-$TiO_2$-$SnO_2$계 Spinel 고용체의 생성과 발색에 관한 연구)

  • 이응상;이진성
    • Journal of the Korean Ceramic Society
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    • v.28 no.11
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    • pp.897-907
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    • 1991
  • This study was conducted to research the formation and the color development of CoO-ZnO-Fe2O3-TiO2-SnO2 system for the purpose of synthesizing the spinel pigments which are stable at high temperature. After preparing CoO-ZnO-Fe2O3, in which CoO causes the color, as a basic composition, $\chi$CoO.(1-$\chi$)ZnO.Fe2O3 system, $\chi$CoO.(1-$\chi$)ZnO.TiO2 system and $\chi$CoO.(1-$\chi$)ZnO.SnO2 system were prepared with $\chi$=0, 0.2, 0.5, 0.7, 1.0 mole ratio respectively. The manufacturing was carried out at 128$0^{\circ}C$ for 90 minutes. These specimens were analyzed by the reflectance measurement and the X-ray diffraction analysis and the results were summarized as follows: 1. All of the specimens formed the spinel structure and were colored with stable yellow or blue. 2. As the content of CoO and Fe2O3 in the specimens being increased, the reflectance of each specimen was measured becoming lower and the colors were changed from yellow to greyish blue and from blue to dark blue. 3. As the substituting amount of Co2+ ion for Zn2+ ion in $\chi$CoO-ZnO-TiO2-SnO2 system being increased, the colors were changed from blue to greyish blue. The colors were changed from yellow to grayish green owing to the tetrahedral Co2+ ions being increased, the octahedral Co2+ ions being decreased with increasing the amount of Sn4+ ions. 4. CoO-ZnO-Fe2O3-TiO2-SnO2 system, in which Zn2+ was substituted with Co2+ and Fe3+ was substituted with Ti4+ and Sn4+, easily formed the spinel structure without regard to the amount of substitution or the ion owing to the selectivity of the coordination number: 4 of Zn2+, 4 of Co2+, 6 of Fe3+ or 6 of Ti4+ and Sn4+.

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Growth and Electrical Properties of Spinel-type ZnCo2O4 Thin Films by Reactive Magnetron Sputtering (반응성 때려내기 방법에 의한 스피넬 형 ZnCo2O4 박막의 성장과 전기적 물성)

  • Song, In-Chang;Kim, Hyun-Jung;Sim, Jae-Ho;Kim, Hyo-jin;Kim, Do-jin;Ihm, Young-Eon;Choo, Woong-Kil
    • Korean Journal of Materials Research
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    • v.13 no.8
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    • pp.519-523
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    • 2003
  • We report the synthesis of cubic spinel $ZnCo_2$$O_4$thin films and the tunability of the conduction type by control of the oxygen partial pressure ratio. Zinc cobalt oxide films were grown on$ SiO_2$(200 nm)/Si substrates by reactive magnetron sputtering method using Zn and Co metal targets in a mixed Ar/$O_2$atmosphere. We found from X-ray diffraction measurements that the crystal structure of the zinc cobalt oxide films grown under an oxygen-rich condition (the $O_2$/Ar partial pressure ratio of 9/1) changes from wurtzite-type $Zn_{1-x}$ $Co_{X}$O to spinel-type $ZnCo_2$$O_4$with the increase of the Co/Zn sputtering ratio,$ D_{co}$ $D_{zn}$ . We noted that the above structural change accompanied by the variation of the majority electrical conduction type from n-type (electrons) to p-type (holes). For a fixed $D_{co}$ $D_{zn}$ / of 2.0 yielding homogeneous spinel-type $_2$O$ZnCo_4$films, the type of the majority carriers also varied, depending on the$ O_2$/Ar partial pressure ratio: p-type for an $O_2$-rich and n-type for an Ar-rich atmosphere. The maximum electron and hole concentrations for the Zn $Co_2$ $O_4$films were found to be 1.37${\times}$10$^{20}$ c $m^{-3}$ and 2.41${\times}$10$^{20}$ c $m^{-3}$ , respectively, with a mobility of about 0.2 $\textrm{cm}^2$/Vs and a high conductivity of about 1.8 Ω/$cm^{-1}$ /.

Microstructure and Phase Transition of ZnO Varistor Ceramics (ZnO 바리스터 세라믹스의 미세구조와 상전이)

  • 김경남;한상목
    • Journal of the Korean Ceramic Society
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    • v.28 no.2
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    • pp.160-166
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    • 1991
  • Microstructure and phase changes during the sintering of ZnO varistors were studied in ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems using acanning electron microscopy (SEM) with an energy dispersive X-ray analysis (EDAX), X-ray diffraction (XRD) and differential thermal analysis (DTA). The spinel phase and the Bi2O3 phase were formed by the decomposition of the pyrochlore phase during heating. The spinel particles (2-4$\mu\textrm{m}$), which were formed both along ther grain boundaries and within the ZnO grain, were always found near the pyrochlore phase. Intergranular phases (Bi2O3 and pyrochlore) were precipitated from the liquid phase during cooling. The Bi2O3 phases were located at the triple (or multiple) point of the ZnO grains. Cr2O3 played a role in decreasing the formation temperature of the spinel phase and Bi2O3 phase during sintering, and inhibited the grain growth.

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Microstructure Properties of Zinc Oxide Varistor with $Sb_2O_3$ Contents for Low Voltage Application ($Sb_2O_3$함량 변화에 따른 저전압용 ZnO Varistor의 미세구조 특성)

  • 박종주;서정선
    • Korean Journal of Crystallography
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    • v.8 no.2
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    • pp.149-153
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    • 1997
  • ZnO varistor based on ZnO-Bi2O3-Co3O4-MnCO3-Cr2-O3-Sb2O3 system with Sb2O3 contents were studied for grain size variation and microstructure properties. The composition of pure ZnO varistor was observed composition was inhibited owing to formation of Zn7Sb2O12 spinel phase and did not observed abnrmal grain growth. With Sb2O3 contents, the grain sizes of ZnO varistor were remarkably decreased and the microstructure had the distribution of dense and homogeneous grains.

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Stability of ZnAl2O4 Catalyst for Reverse-Water-Gas-Shift Reaction (RWGSR)

  • Joo, Oh-Shim;Jung, Kwang-Deog
    • Bulletin of the Korean Chemical Society
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    • v.24 no.1
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    • pp.86-90
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    • 2003
  • Reverse-Water-Gas-Shift reaction (RWGSR) was carried out over the ZnO, $Al_2O_3,\;and\;ZnO/Al_2O_3$ catalysts at the temperature range from 400 to 700 ℃. The ZnO showed good specific reaction activity but this catalyst was deactivated. All the catalysts except the $ZnO/Al_2O_3$ catalyst (850 ℃) showed low stability for the RWGSR and was deactivated at the reaction temperature of 600 ℃. The $ZnO/Al_2O_3$ catalyst calcined at 850 ℃ was stable during 210 hrs under the reaction conditions of 600 ℃ and 150,000 GHSV, showing CO selectivity of 100% even at the pressure of 5 atm. The high stability of the $ZnO/Al_2O_3$ catalyst (850 ℃) was attributed to the prevention of ZnO reduction by the formation of $ZnAl_2O_4$ spinel structure. The spinel structure of $ZnAl_2O_4$ phase in the $ZnO/Al_2O_3$ catalyst calcined at 850 ℃ was confirmed by XRD and electron diffraction.

The Study on Thermal Analysis and Thermodynamic Characteristics of Spinel Compounds(ZnCo2O4, NiCo2O4) (스피넬 구조를 가지는 전이금속화합물(ZnCo2O4, NiCo2O4)의 열적 분석 및 열역학적 특성 연구)

  • Kim, Jae-Uk;Ji, Myoung-Jin;Cha, Byung-Kwan;Kim, Chul-Hyun;Jang, Won-Cheoul;Kim, Jong-Gyu
    • Journal of the Korean Chemical Society
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    • v.54 no.2
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    • pp.192-197
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    • 2010
  • The spinel compound was obtained by the thermal decomposition of Zn-Co and Zn-Ni gel prepared by sol-gel method using oxalic acid as a chelating agent. The formation of spinel compound has been comfirmed by thermogravimetric analysis (TGA), x-ray powder diffraction (XRD) and infrared spectroscopy (IR). The particle size of 13 nm~16 nm was calculated by Scherrer's equation. The sol-gel method provides a practicable and effective route for the synthesis of the spinel compound at low temperature ($350^{\circ}C$). The kinetic parameters such as activation energy (Ea) and pre-exponential factor (A) for each compound were found by means of the Kissinger method and Arrhenius equation. The decomposition of spinel compound has an activation energy about 155 kJ/mol. Finally, the thermodynamic parameters (${\Delta}G^{\varphi}$, ${\Delta}H^{\varphi}$, ${\Delta}S^{\varphi}$) for decomposition of spinel compound was determined.

Mössbauer Studies on Magnetoresistance in Chalcogenide Fe0.9M0.1Cr2S4 (M=Co, Ni, Zn) (Chalcogenide Fe0.9M0.1Cr2S4(M=Co, Ni, Zn)의 자기저항에 관한 Mössbauer 분광연구)

  • Park, Jae Yun;Lee, Byoung-Seob
    • Journal of the Korean Magnetics Society
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    • v.23 no.2
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    • pp.43-48
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    • 2013
  • The Jahn-Teller distortion of chalcogenide $Fe_{0.9}M_{0.1}Cr_2S_4$ (M=Co, Ni, Zn) have been investigated by M$\ddot{o}$ssbauer spectroscopy. The crystal structures of $Fe_{0.9}M_{0.1}Cr_2S_4$ (M=Co, Ni, Zn) are cubic spinel at room temperature. Magnetoresistance measurements indicate these system is conducting-semiconducting transistion around $T_C$. Below $T_C$, the asymmetric line broadening is observed and considered to be dynamic Jahn-Teller distortion. Isomer shift value of the samples at room temperature was about 0.5 mm/s, which means that charge state of Fe ions is ferrous in character. The Ni substitutions for Fe occur to increase the Jahn-Teller relaxation. CMR properties could be explained with magnetic polaron due to Jahn-Teller effect, which is different from both the double exchange interactions of manganite system and the triple exchange interactions of chalcogenide $Cu_xFe_{1-x}Cr_2S_4$.

A Study on the S-block Structure in Hexagonal Ferrites (육방정 페라이트의 S-block 구조에 대한 연구)

  • 신형섭;이종협;권순주
    • Journal of the Korean Ceramic Society
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    • v.31 no.1
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    • pp.62-68
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    • 1994
  • It is compared the structures of the S-block in the Ba-Co-Zn Y-type hexagonal ferrites (Ba2Co2-xZnxFe12O22, x=0~2) and the Co-Zn spinel ferrites (Co1-xZnxFe2O4, x=0~1) expressed by a hexagonal axis system (space group R3m). The structures have been refined with a Rietveld analysis of the powder X-ray diffraction pattern with high precision (Rwp<0.13, RI<0.03). The overal dimension of the S-block is slightly different from the 1/3 of a hexagonal spinel unit cell as follow: 1.6~2.0% longer c-axis, 1.3~1.6% shorter a-axis and about 1% smaller volume. Upto Zn:Co=1:1 in the Ba-Co-Zn Y-type hexagonal ferrites, the zinc substitute primarily the tetrahedral sites in the S-block. Beyond that the zinc seems to go into the T-block as well.

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Electrical and Optical Properties of P-type Amorphous Oxide Semiconductor Mg:$ZnCo_2O_4$ Thin-Film

  • Lee, Chil-Hyoung;Choi, Won-Kook;Lee, Jeon-Kook;Choi, Doo-Jin;Oh, Young-Jei
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.87-87
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    • 2011
  • Oxide semiconductors are attractive materials for thin-film electronics and optoelectronics due to compatibility with synthesis on large-area, glass and flexible substrate. However, development of thin-film electronics has been hampered by the limited number of semiconducting oxides that are p-type. We report on the effect of the oxygen partial pressure ratio in the gas mixture on the electrical and optical properties of spinel Mg:$ZnCo_2O_4$ thin films deposited at room temperature using RF sputtering, that exhibit p-type conduction. The thin-films are deposited at room temperature in a background of oxygen using a polycrystalline Mg:$ZnCo_2O_4$ ablation target. The p-type conduction is confirmed by positive Seebeck coefficient and positive Hall coefficient. The electrical resistivity and carrier concentration in on dependent Mg:$ZnCo_2O_4$ thin films were found to be dependent on the oxygen partial pressure ratio. As a result, it is revealed that the Mg:$ZnCo_2O_4$ thin-films were greatly influenced on the electrical and optical properties by the oxygen partial pressure condition. The visible region of the spectrum of 36~85%, and hole mobility of 1.1~3.7 $cm^2$/Vs, were obtained.

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