• The Journal of the Acoustical Society of Korea
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• v.17 no.8
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• pp.41-47
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• 1998

이중 통신(Duplexer) 필터를 설계 및 개발하기 위한 최적조건을 구하기 위해 36° LiTaO3 기판 표면에 빗살무늬 변환기를 사용한 모의 실험을 수행하였으며, 전극 재료로는 Cu-Al(W3%)합금을 이용하였다. 제작한 듀플렉스 필터의 사다리(Lader)형 구조로서 직렬 공진기와 병렬 공진기의 결합으로 필터를 구성하였다. 적절한 통과대역과 저지대역을 형성 하기 위하여 직렬 공진기와 병렬 공지기의 주파수 차이를 30MHz로 했으며, 낮은 저지대역 을 형성하기 위하여 두 공진기의 전기용량의 비는 1로 하였고, 전극의 두께는 2,500Å으로 하였을 때 설계 조건과 일치하는 주파수 응답을 얻었다. 제작한 듀플렉서 필터의 주파수 특 성은 중심 주파수는 836.5MHz와 881.5MHz, 통과대역 폭은 25MHz, 삽입손실은 2.5dB 이하 및 저지대역은 -35dB이하로 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.306-306
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• 2010

21 세기는 언제, 어디에서, 누구나가 정보를 자유롭게 염가에 이용할 수 있는 유비쿼터스 정보사회가 될 것으로 예상하고 있다. 이러한 유비쿼터스 사회가 실현되기 위해서는 필연적으로 대두되고 있는 과제가 에너지 공급원의 문제이다. 휴대용 전자제품이나 소형 에너지 공급원으로 지금까지 주로 전지가 사용되어 왔지만 이것들은 교환 및 충전이 불가피하다. 이러한 불편함을 개선하기위해 교환과 충전이 불필요하거나 아주 장시간동안 공급해주는 형태의 에너지 공급원의 필요성이 대두되고 있다. 이러한 에너지 공급원으로 최근에 많은 연구가 되고 있는 것이 주위의 환경으로부터 버려지는 에너지를 수확(harvesting)하여 전력으로 변환하는 에너지 하베스팅 (energy harvesting)기술이 연구 개발되고 있다. 에너지 하베스팅 응용을 위해서 사용되어지는 압전 세라믹스는 전압출력계수 ($g_{33}$)가 커야하는데 이것은 압전상수 ($d_{33}$)와 유전상수 (${\varepsilon}_{\tau}$)의 값에 영향을 받는 것으로 알려져있다. 그 중에서 우수한 전기적 특성 때문에 PZT를 기반으로 하는 압전 세라믹스가 사용되어져왔다. 그러나 Pb의 높은 유독성과 Pb를 포함하는 제품들의 처분문제들로 인해 제조에 관한 많은 문제점들을 지니고있다. 그리하여, Pb를 포함하지 않는 Pb-free계에 관한 연구가 전세계적으로 활발히 진행되고 있다. 다양한 Pb-free계 후보자들 가운데 $K_{0.5}Na_{0.5}NbO_3$ (KNN)는 높은 큐리온도와 좋은 강유전 특성 및 압전특성 때문에 PZT를 대체할 가장 장래성있는 대안들 중의 하나로 고려되고 있다. 그러나 고온에서 알칼라인 원소들의 높은 휘발성 때문에 보통의 소결공정으로는 소결이 잘되고 치밀한 세라믹스를 얻기가 어렵다. 많은 연구에서 KNN 세라믹스의 소결성을 개선하기 위하여 강유전 또는 반강유전체인 $SrTiP_3$와 $LiTaO_3$를 고용체 형성에 포함시키고 또한 $K_4CuNb_8O_{23}$, $MnO_2$, CuO등과 같은 소결조제를 첨가하여 압전 특성과 소결성을 개선시켰다. 따라서 본 연구에서는 비화학양론적 (1-X)[$[(K_{0.5}Na_{0.5}]_{0.97}(Nb_{0.96}Sb_{0.04})O_3]$ + 0.008CuO + 0.2wt% $Ag_2O$ + X $CeMnO_3$의 조성을 사용하여 A사이트와 B 사이트에 각각 Ce이온과 Mn 이온의 치환량을 변화하여 그에 따른 유전 및 압전특성을 조사하였다.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.22-25
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• 2007

In this research, magnetic properties of spin valve structures using IrMn layers as antiferromagnetic were studied depending on the thickness of the pinned layer. The spin valve structure was Si substrate/$SiO_2(2,000\;{\AA})/Mo(17\;{\AA})NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(t\;{\AA})/Ta(25\;{\AA})$. Also, Mo film was deposited on Si substrates and the thermal annealing effect was analyzed. The resistivity of the Mo film was increased as an annealing temperature was increased up to $600^{\circ}C$. The variations of MR ratio were related with magnetic exchange coupling field of the spin valve structures for various IrMn pinned layer thickness up to 130 ${\AA}$. MR ratio and $H_{ex}$ of spin valves was about 9.05% and 277.5 Oe when the thickness of the IrMn pinned layer was $32.5\;{\AA}(t=32.5\;{\AA})$. It was increased to 9.65% and 337.5 Oe for $t=65\;{\AA}$. For $t=97.5\;{\AA}$, the MR ratio and Hex decreased to 8.2% and 285 Oe, and further decrease was observed up to $t=130\;{\AA}$.

• Economic and Environmental Geology
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• v.45 no.6
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• pp.643-659
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• 2012

The Chungju Fe-REE deposit is located in the Kyemyeongsan Formation of the Ogcheon Group. The Kyemyeongsan Formation includes meta-volcanic rocks and pegmatite hosted REE deposit which show different kind of REE-containing minerals. The meta-volcanic rocks hosted REE deposits' main REE minerals are allanite, zircon, apatite, and sphene, whereas the pegmatite hosted REE deposits is mainly composed of fergusonite, and karnasurtite, zircon, thorite. The meta-volcanic rock hosted major REE mineral is allanite as the form of aggregation and contains 23.89-29.19 wt% TREO (Total Rare Earth Oxide), 4.71-9.92 wt% $La_2O_3$, 11.30-14.33 wt% $Ce_2O_3$, 0.11-0.29 wt% $Y_2O_3$, 0.15-0.94 wt% $ThO_2$, as a formula of (Ca, Y, REE, Th)$_{2.095}$(Mg, Al, Ti, Mn, $Fe^{3+})_{2.770}(SiO_4)_{2.975}(OH)$. Accompanying REE in a coupled substitution for $Ca^{2+}$ (M1 site) and $Al^{3+}-Fe^{2+}$ (M2 site) leads to a large chemical variety. Due to the allanite's high contents of Fe, it belongs to Ferrialanite. The pegmatite hosted deposit's domi-nant REE mineral is fergusonite as prismatic or subhedral grains associated with zircon, fluorite and karnasurtite. Geochemical composition of the fergusonite($YNbO_4$) suggests substitution of Y-REE and Y-Th in A-site, and Nb-Ta-Ti in B-site, furthermore the proportion of $Y_2O_3$ and $Nb_2O_5$ is oddly 1:1.5 comparing to the ideal ratio 1:1 and Nb is higher than Y, also A-site Y actively substitutes with REE. Karnasurtite in pegmatite variously ranges 9.16-22.88 wt% $Ce_2O_3$, 2.15-9.16 wt% and $La_2O_3$, 0.44-10.8 wt% $ThO_2$, as a calculated formula (Y, REE, Th, K, Na, Ca)$_{1.478}(Ti, Nb)_{1.304}$(Mg, Al, Mn, $Fe^{3+})_{0.988}$(Si, P)$_{1.431}O_7(OH)_4{\cdot}3H_2O$. Firstly the 870-860 Ma is the initial age of the supercontinent Rhodinia dispersal and subsequent A-1 type volcanism, which contains Fe, REE, and HFS(High Field Strength elements; Nb, Zr, Y etc.) elements in Fe-rich meta-volcanic rocks dominant Kyemyeongsan Formation, might mineralized allanite. Another synthesis is that regional metamorphism at late Paleozoic 300-280 Ma(Cho et al., 2002) might cause allanite mineralization. Also pegmatite REE mineralization highly related to the granite intrusion over the Chungju area in Jurassic(190 Ma; Koh et al., 2012). Otherwise above all, A-1 type volcanism at the same time of the Kyemyeongsan Formation development, regional metamorphism and pegmatite, might have caused REE mineralization. Although REE ore bodies display a close spatial association, each ore bodies display temporal distinction, different mineral assemblage and environment of ore formation.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.331-337
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• 2003

This paper represents 50 ㎓ narrow band pass filters for fiber optical communication fabricated by dual ion beam sputtering method. We have analyzed the characteristics of the TA$_2$ $O_{5}$ and $SiO_2$ single layers in order to optimize the process conditions for the 50 ㎓ narrow band pass filters, and controlled the film thickness uniformity to less than 0.1 nm deviation by dual peak spike filter pre-deposition. We designed and fabricated 50 ㎓ narrow band pass filters that consist of 216 layers including 4 cavities based on quarter wave optical thickness. Class substrates with high thermal expansion coefficients were used to reduce the film stress. Anti-reflection coating at the rear side of the substrate was also needed to reduce the optical thickness errors of the Optical Monitoring System caused by multiple beam interference between the front side and the rear side of substrate. The optical characteristics of this 50 ㎓ narrow band pass filters are insertion loss of 0.40 ㏈, pass band ripple of 0.20 ㏈, and pass bandwidth at -0.5 ㏈ of 0.20 nm. and isolation bandwidth at -25 ㏈ of 0.6 nm, which satisfy specifications of dense WDM system in fiber optical communications.tions.

• Journal of Powder Materials
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• v.25 no.5
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• pp.390-394
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• 2018

Metallic tantalum powder is manufactured by reducing tantalum oxide ($Ta_2O_5$) with magnesium gas at 1,073-1,223 K in a reactor under argon gas. The high thermodynamic stability of magnesium oxide makes the reduction reaction from tantalum oxide into tantalum powder possible. The microstructure after the reduction reaction has the form of a mixture of tantalum and magnesium oxide, and the latter could be entirely eliminated by dissolving in weak hydrochloric acid. The powder size in SEM microstructure for the tantalum powder increases after acid leaching in the range of 50-300 nm, and its internal crystallite sizes are observed to be 11.5 to 24.7 nm with increasing reduction temperatures. Moreover, the optimized reduction temperature is found to be 1,173 K as the minimum oxygen concentration is approximately 1.3 wt.%.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.211-216
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• 2001

Top synthetic spin valves wi th structure Ta/NiFe/CoFe/Cu/CoFe(Pl)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with SiO$_2$ of 1500 were prepared by dc magnetron sputtering system. We have changed only the thickness of the free layer and the thickness difference (Pl-P2) in the two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on the GMR properties and the interlayer coupling field in a spin valve with a synthetic antiferromagnet. As thickness difference of pinned layer was decreased from +25 to -25 , MR ratio was decreased gradually. However, there was a dip zone indicating a big change of MR ratio around Pl = P2, which can be due to the large canting of pinned layers. The modified Neel model was suggested for the top synthetic spin valve to explain the interlayer coupling field according to the thickness change of ferromagnetic layers. The interlayer coupling field was decreased due to the magnetostatic coupling (orange peel coupling) as suggested by model. However, the interlayer coupling field was not explained at the dip zone by the modified Neel model. The deviation of modified Neel model at the dip zone could be due to the largely canting of the pinned layers as well, which depends on different thickness in synthetic antiferromagnetic structure.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.33-37
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• 2008

This paper describes the development of a new $5.0{\times}3.2mm$ SAW filter bank which is consist of 12 L, C matching components and 4 SAW bare chips on PCB substrate with CSP technology. We improved the manufacturing cost by removing the ceramic package through direct flip bonding of $LiTaO_3$ SAW bare chip on PCB board after mounting L, C passive element on PCB board. After that we realized the hermitic sealing by laminating the epoxy film. To confirm the confidentiality and durability of the above method, we have obtained the optimum flip bonding & film laminating condition, and figured out material property and structure to secure the durability & moisture proof of PCB board. The newly developed super mini $5.0{\times}3.2mm$ filter bank shows the superior features than those of existing products in confidence, electrical, mechanical characters.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.232-240
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• 1999

In this study, the $(1-\chi)Ba(Mg_{\fraction one-third}Ta_{\fraction two-thirds}O_3-\chiBa(Co_{\fraction one-third}\Nb_{\fraction two-thirds})O_3$ ceramics($\chi$=0.3,0.4,0.5,0.6) were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1500~1575^{\circ}C$ for5 hours in air. The BMT-BCN ceramics have a complex perovskite structure, and have peaks of (101), (102), (201), (202) and (212). Increasing the sintering temperature, dielectric constant was increased. Temperature coefficients of resonant frequency of the specimens were decreasing with increasing BCN content. In the case of the 0.7BMT-0.3BCN ceramics sintered at $1575^{\circ}C$ for 5 hours, dielectric constant, quality factor and temperature coefficient of resonant frequency for microwave dielectrics application were a good value of 28, 235500 at ㎓ and -$1.2 ppm/^{\circ}C$, respectively.