• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.229-230
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• 2009

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.252-255
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• 1999

The effect of calcination temperature(1st and 2nd calcining at 110$0^{\circ}C$ , 120$0^{\circ}C$ and 130$0^{\circ}C$ respectively) on physical properties of BMNT Ceramics ware investigated. The optimum 1st and 2nd calcination temperature were 120$0^{\circ}C$ , and sintering temperature was 155$0^{\circ}C$. In this condition, the sintering density was 7.53 [g/㎤] and the dielectric constant, Q.f$_{0}$ and $\tau$$_{r}$ were 26, 80, 300[GHz] and +1.5[ppm/$^{\circ}C$] respectively in the microwave range.e.e.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.38-41
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• 2006

Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.290-296
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• 2008

$AB'_{0.5}B"_{0.5}O_3$ type complex perovskite structures which have been reported as proton conductors over $600^{\circ}C$ were studied. The $AB'_{0.5}B"_{0.5}O_3$ type complex perovskite structure is known to be more easily synthesized and has better stability than normal $ABO_3$ perovskite structure. And it is stable at about $800^{\circ}C$ in the $CO_2$ atmosphere, whereas the $BaCeO_3$ perovskite is easily decomposed into carbonate. In addition, this $AB'_{0.5}B"_{0.5}O_3$ type complex perovskite structure could simply produce oxygen vacancies within their structure not by introducing additional doping oxides but by just controling the molar ratio of $B'^{+3}$ and $B"^{+5}$ metal ions in the B site. Hence it is easy to design the structure which shows highly sensitive electrical conductivity to humidity. In this study, the single phase boundary of $BaR_{0.5+x}Ta_{0.5-x}O_{3-{\delta}}$(R = rare earth) complex perovskite structures and it's phase stability were investigated with changes in composition, x. And the humidity dependance of electrical conductivity at different $P_{H2O}$ conditions was investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.116-120
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• 2011

The 0.98 ($Na_{0.44}K_{0.52})Nb_{0.84}O_3-0.02Li_{0.04}$ ($Sb_{0.06}Ta_{0.1})O_3-0.5$ mol%CuO ceramics have been fabircated by ordinary sintering technique and the effect of various calcination method on the electrical propertis and microstructure have been studied. It was observed that the various calcination method influenced the elelctrical properties and structural properties of the 0.98NKN-0.02LST-0.5 mol%CuO ceramics with the optimum piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) at room temperature of about $155{\rho}C/N$ and 0.349, respectively, from 0.98NKN-0.02LST-0.5 mol%CuO ceramics sample. The curie temperature ($T_c$) of this ceramic was found at $440^{\circ}C$. The 0.98NKN-0.02LST-0.5 mol%CuO ceramics are a promising lead-free piezoelectric ceramics.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.136-143
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• 2000

$SrBi_2Ta_2O_9;(SBT)$ films were deposited on p-type Si(100) at room temperature by rf magnetron sputtering method to confirm the possibility of application of $Pt/SBT/Pt/Ti/SiO_2/Si$ structure (MFM) for destructive read out ferroelectric RAM (random access memory). Their structural characteristics with the various annealing times and Ar/$O_2$ gas flow ratios in sputtering were observed by XRD (X-ray diffractometer) and the surface morphologies were observed by FE-SEM (field emission scanning electron microscopy), and their electrical properties were observed by P-V (polarization-voltage measurement) and I-V (current-voltage measurement). The Ar/$O_2$ gas flow ratios of sputtering gas were changed from 1 : 4 to 4 : 1 and SBT thin films were deposited at room temperature. The films show (105), (110) peaks of SBT by XRD measurement. SBT thin films deposited at room temperature were crystallized by furnace annealing at 80$0^{\circ}C$ in oxygen atmosphere during either one hour or two hours. Among their electrical properties, P-V curves showed shaped hysteresis curves, but the SBT thin films showed the asymmetric ferroelectric properties in P-V curves. When Ar/$O_2$ gas flow ratios are 1 : 1, 2: 1, the leakage current density values of SBT thin films are good, those values of 3 V, 5 V, and 7 V are respectively $3.11\times10^{-8} \textrm{A/cm}^2$, $5\times10^{-8}\textrm{A/cm}^2$, $7\times10^{-8}\textrm{A/cm}^2$.After two hours of annealing time, their electrical properties and crystallization are improved.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.92-96
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• 1998

Ferroelectric Bi-layered oxides SrBi2Ta2O9 (SBT) thin films have been deposited on Pt/Ti/SiO2/Si substrates using multi-target sputtering. Structure, composition, and electrical properties have been investigated on films. The SBT films were deposited with the various bismuth sputtering powers. The SBT films deposited with the bismuth sputtering power of 20 W have the most dense microstructure and the remanent polarization (Pr) of 9.2 ${\mu}$C/cm and the coercive field (Ec) of 43.8 kV/cm at an applied voltage of 5V. The SBT films deposited with the bismuth sputtering power of 20W showed a fatigue-free characteristics up to 1.0${\times}$1010 cycles under 5V bipolar pulse and a leakage current density of 2.0${\times}$10-8 A/$\textrm{cm}^2$ at 200 kV/cm.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.621-627
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• 1996

$SrBi_{2x}TaO_9$ ferroelectric thin films were prepared on platinized silicon substrates using MOD proces, and crystallization behavior of the films was investigated with variation of the annealing temperature and Bi content x. Crystalline phase of bismuth layered perovskite structure was formed even by baking the films at $800^{\circ}C$ for 5 minutes in air, and was not changed by annealing at temperatures raning from $700^{\circ}C$ to $900^{\circ}C$ for 1 hour in oxygen ambient. When $SrBi_{2x}TaO_9$ thin films ($0.8\lex\ie1.6$) were annealed at $800^{\circ}C$, Preferred orientation of the films along c-axis was observed with $x\ge1.2$. With increasing Bi content x, surface morphology of the films was changed from equiaxed grains to elongated grains.

• Korean Journal of Optics and Photonics
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• v.23 no.3
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• pp.124-127
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• 2012

We designed and fabricated dichroic filters for high-power fiber lasers to protect the pumping laser diode from counterpropagating laser beams. The transmittance at laser diode wavelengths of 905 nm~925 nm was designed to be less than 0.1% and the transmittance at the fiber laser or Brillouin scattering wavelengths of 1020 nm ~ 1100 nm was designed to be more than 99.9%. Since oxide materials have good adhesion to the $SiO_2$ substrate, $SiO_2/Ta_2O_5$ were used as coating materials. The filter was fabricated according to our optimized design and its characteristics were compared with the theoretical design. As a result, the transmittance at laser diode wavelengths of 905 nm~925 nm was measured to be less than 0.1%, and the transmittance at the fiber laser or Brillouin scattering wavelengths of 1020 nm~1100 nm was measured to be more than 95.5%, which coincided well with the theoretical design considering processing errors. The filter was found to operate well over 1W of input laser power.

• New & Renewable Energy
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• v.9 no.1
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• pp.51-59
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• 2013

Tantalum carbide crystallites which is to be used for $H_2$ fuel cell has been synthesized via a temperature-programmed reduction of $Ta_2O_5$ with pure $CH_4$. The resultant Ta carbide crystallites prepared using two different heating rates and space velocity exhibit the different surface areas. The $O_2$ uptake has a linear relation with surface area, corresponding to an oxygen capacity of $1.36{\times}10^{13}\;O\;cm^{-2}$. Tantalum carbide crystallites are very active for hydrogen production form ammonia decomposition reaction. Tantalum carbides are as much as two orders of magnitude more active than Pt/C catalyst (Engelhard). The highest activity has been observed at a ratio of $C_1/Ta^{{\delta}+}=0.85$, suggesting the presence of electron transfer between metals and carbon in metal carbides.