Journal of Korean Vacuum Science & Technology

The Korean Vacuum Society (한국진공학회)
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Preparation of ferroelectric SrBi2Ta2O9 thin films deposited by multi-target sputtering

  • Hoon, Yang-Cheol (Dept. of Materials Engineering, Chungnam national University, Daeduk Science Town, 305-764, Taejon, Korea (Received March 5, 1998)) ;
  • Gil, Yoon-Soon (Dept. of Materials Engineering, Chungnam national University, Daeduk Science Town, 305-764, Taejon, Korea (Received March 5, 1998))
  • Published : 1998.10.01
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Abstract

Ferroelectric Bi-layered oxides SrBi2Ta2O9 (SBT) thin films have been deposited on Pt/Ti/SiO2/Si substrates using multi-target sputtering. Structure, composition, and electrical properties have been investigated on films. The SBT films were deposited with the various bismuth sputtering powers. The SBT films deposited with the bismuth sputtering power of 20 W have the most dense microstructure and the remanent polarization (Pr) of 9.2 ${\mu}$C/cm and the coercive field (Ec) of 43.8 kV/cm at an applied voltage of 5V. The SBT films deposited with the bismuth sputtering power of 20W showed a fatigue-free characteristics up to 1.0${\times}$1010 cycles under 5V bipolar pulse and a leakage current density of 2.0${\times}$10-8 A/$\textrm{cm}^2$ at 200 kV/cm.

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