• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.157-158
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• 2000

In this study, to get the larger drain current of the device under the same operation condition as the conventional gate dielectric SiNx thin film transistor devices, we introduced new gate dielectric $Ta_2O_5$ thin film which has high dielectric constant $({\sim}25)$ and good electrical reliabilities. For the application for the TFT device, we fabricated the $Ta_2O_5$ gate dielectric TFT on the low-temperature-transformed polycrystalline silicon thin film using the self-aligned implantation processing technology for source/drain and gate doping. The $Ta_2O_5$ gate dielectric TFT showed better electrical performance than SiNx gate dielectric TFT because of the higher dielectric constant.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1439-1441
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• 1994

This paper propose a new $Ta_2O_5$ film fabrication technique by Laser CVD. Laser CVD is noticable that film formation can be done at low temperature with less damage. After film deposition, the characteristics of Laser CVD $Ta_2O_5$ film is evaluated.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.85-90
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• 1998

Reactive ion etching (RIE) of Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the could be used effectively to etch the Ta-Al alloy thin film. The etching rate of the thin film at a Ta content of 50 mol% was about 67$\AA$/min. No selectivity between the Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the etching rate of the SiO2 layer was 12 times faster than that of the Ta-Al alloy thin film. In addition, it was observed that photoresist of AZ5214 was more useful than Shiepley 1400-2 in RIE with the CF4 gas.

• Journal of Magnetics
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• v.11 no.3
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• pp.139-142
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• 2006

We fabricated new one-dimensional magnetophotonic crystal (1D-MPC) utilizing the second and third photonic band gaps where localized modes existed. Structure of the 1D-MPC was $(Ta_{2}O_{5}/SiO_{2})_{5}/Bi:YIG/(SiO_{2}/Ta_{2}O_{5})_{5}$ with optical thicknesses of 3$\lambda$ /4 for $Ta_{2}O_{5} and $SiO_2$ dielectric layers and $\lambda$ /2 for Bi:YIG defect layer, where $\lambda$ is a wavelength of a localized mode in the second photonic band gap. Faraday rotation at the localized mode in the second photonic band gap was enhanced, which was confirmed by calculation using 4${\times}$4 matrix method.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.182-183
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• 2000

유전체 층으로 SiO$_2$와 Ta$_2$O$_{5}$ , 자성층으로 Bi:YIG를 가지는 구조 (SiO$_2$/Ta$_2$O$_{5}$ )$_{5}$ /Bi:YIG/(Ta$_2$O$_{5}$ /SiO$_2$)$_{5}$ 의 1차원 자성 포토닉 결정의 광학적 및 자기광학적 특성을 수치해석을 통하여 계산하고$^{(2)}$ , 이를 바탕으로 1차원 자성 포토닉 결정을 RF magnetron sputtering과 rapid thermal annealing 방법을 이용하여 제작하였다.$^{(1)}$ 제조된 자성 포토닉 결정은 선명한 포토닉 밴드갭을 보였고, 원하는 파장에서 큰 페러데이 회전각과 투과율이 얻어졌다. (중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.6-9
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• 1993

In this study, Sintering behavior, Crystallographic structure, Microwave Dielectric properties of the nonstoichiometric Ba$\_$1-x/(Zn$\_$1/3/Ta$\_$2/3/)O$_3$with 0 x 0.04 were investigated. A small amount(lmol%) of MnO$_2$is doped to the sample to complete the sintering. The degree of Zn and Ta ordering in B site and Lattice distortion were promoted by reducing Ba concentration. At x=0.01, Unloaded Q value reached above 7500 (at 10.5 GHZ) ; however, above x=0.01, Q value was greatly decreased, in spite of saturation in Zn-Ta ordering. At x=0.01, The Dielectric constant was 30 at 10.5GHz. and The Temperature Coefficient was estimated as 2ppm/$^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.98-100
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• 2003

The microwave dielectric properties and microstructure of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics were investigated. All sample of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics were prepared by conventional mixed oxide method. The sintering temperature was $1375^{\circ}C{\sim}1450^{\circ}C$. The structural properties of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics were investigated by X-ray diffractormeter. According to the X-ray diffraction patterns of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics, the major phase of the hexagonal $Mg_4Ta_2O_9$ were presented. In the case of the $0.7Mg_4Ta_2O_9-0.3CaTiO_3$ ceramics sintered at $1425^{\circ}C$, density, dielectric constant, quality factor were $5.799g/cm^2$, 23.26, 40,054 GHz, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.87-87
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.140-141
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• 1992

• Proceedings of the Korean Ceranic Society Conference
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• 2004.04b
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• pp.38.1-38.1
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• 2004