• 한국재료학회지
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• 제34권9호
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• pp.448-455
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• 2024

We conducted a study on excessive doping of the Cr and In elements in Bi-Sb-Te materials satisfying the Hume-Rothery rule, and investigated the resulting electrical and thermal properties. From X-ray diffraction (XRD) results, we confirmed the formation of a single phase even with excessive doping. Through analysis of electrical properties, we observed the highest enhancement in electrical characteristics at y = 0.2, suggesting that the appropriate ratio of Bi-Sb significantly influences this enhancement. Using the Callaway-von Baeyer (CvB) model to assess scattering due to point defects, we calculated the experimental point defect scattering factor (Γ_CvB.exp), which was notably high due to the substantial differences in volume and atomic weight between the substituted (Cr, In) and original (Bi, Sb) elements. Additionally, we conducted a single parabolic band (SPB) modeling analysis of materials with compositions y = 0.1 and 0.2, where, despite a decrease in density-of-states effective mass (m_d^*) during the enhancement process from y = 0.1 to 0.2, a sharp increase in non-degenerate mobility (μ₀) led to an 88 % increase in weighted mobility (μ_w). Furthermore, analyzing zT with respect to n_H revealed a 51 % increase in zT at a composition of y = 0.2. This study confirmed a significant reduction in lattice thermal conductivity with the co-doping strategy, and with further compositional studies to improve electrical properties, we anticipate achieving high zT.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.231-231
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• 2010

Thermoelectric properties of a multi-layered thin film, which was composed with indium selenide and bismuth telluride, were investigated. The structure of the layered thin film is Bi-Te /In-Se/Bi-Te and it was prepared on sapphire substrate by RF magnetron sputter using stoichiometric $Bi_2Te_3$ (99.9%) and $In_2Se_3$(99.99%) target at room temperature. Then, it was annealed at temperature range of 150 - $500^{\circ}C$ in Ar ambient. Structural characterizations were done using X-ray diffraction(XRD, BRUKER, D8, 60kW) and transmission electron microscopy (TEM, FEI, Tecnai, F30 S-Twin), respectively. Cross-section of multi-layer structure was observed by Scanning electron microscopy (SEM). The resistivity and Seebeck coefficient of these samples were also measured by conventional equipment at room temperature. The maximum value of power factor was $1.16\;{\mu}W/k^2m$ at annealing temperature of $400^{\circ}C$.

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1541-1545
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• 2018

We study lattice thermal conductivity of $Sb_2Te_3$ using molecular dynamics simulations. The interatomic potentials are fitted to reproduce total energy and elastic constants, and phonon properties calculated using the potentials are in reasonable agreement with first-principles calculations and experimental data. Our calculated lattice thermal conductivities of $Sb_2Te_3$ decrease with temperature from 150 K to 500 K. The in-plane lattice thermal conductivity of $Sb_2Te_3$ is higher than cross-plane lattice thermal conductivity of $Sb_2Te_3$, as in the case of $Bi_2Te_3$, which is consistent with the anisotropy of the elastic constants.

• 한국재료학회지
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• 제16권5호
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• pp.292-296
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• 2006

Effects of rapid thermal annealing of bismuth telluride thin films on their thermoelectric properties were investigated. Films with four different compositions were elaborated by co-sputtering of Bi and Te targets. Rapid thermal treatments in range of $300{\sim}400^{\circ}C$ were carried out during 10 minutes under the reducing atmosphere (Ar with 10% $H_2$). As the temperature of thermal treatment increased, carrier concentrations of films decreased while their mobilities increased. These changes were clearly observed for the films close to the stoichiometric composition. Rapid thermal treatment was found to be effective in improving the thermoelectric properties of $Bi_2Te_3$ films. Recrystallization of $Bi_2Te_3$ phase has caused the enhancement of thermoelectric properties, along with the decrease of the carrier concentration. Maximum values of Seebeck coefficient and power factor were obtained for the films treated at $400^{\circ}C$ (about $-128{\mu}V/K$ and $9{\times}10^{-4}\;W/K^2m$, respectively). With further higher temperature ($500^{\circ}C$), thermoelectric properties deteriorated due to the evaporation of Te element and subsequent disruption of film's structure.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2013년도 임시총회 및 하계학술연구발표회
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• pp.19-20
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• 2013

Thermoelectic properties of the typical thermoelectric host materials, the tellurides and selenides, are known to be noticeably changed by their volume change due to the strain [1]. In the bismuth telluride ($Bi_2Te_3$) crystal, a substitution of rare-earth element by replacing one of the Bi atoms may cause the change of the lattice parameters while remaining the rhombohedral structure of the host material. Using the first-principles approach by the precise full potential linearized augmented plane wave (FLAPW) method [2], we investigated the Ce substitution effect on the thermoelectric transport coefficients for the bismuth telluride, employing Boltzmann's equation in a constant relaxation-time approach fed with the FLAPW wave-functions within the rigid band approximation. Depending on the real process of re-arrangement of atoms in the cell to reach the equilibrium state, $CeBiTe_3$ was found to manifest a metal or a narrow bandgap semiconductor. This feature along with the strong correlation effect originated by the 4f states of Ce affect significantly on the thermoelectric properties. We showed that the position of the strongly localized f-states in energy scale (Fig. 1, f-states are shaded) was found to alter critically the transport properties in this material suggesting an opportunity to improve the thermoelectric efficiency by tuning the external strain which may changing the location of the f-sates.

• 열처리공학회지
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• 제31권3호
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• pp.126-134
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• 2018

In this research, we produced polycrystalline n-type $Bi_2Te_{2.7}Se_{0.3}$ powder using water atomization. To obtain full benefit through water atomized powder, we have implemented spark plasma sintering and hot extrusion for powder compaction. The microstructure and thermoelectric properties were investigated and compared. The average grain size of SPS and extruded bulks were 3.08 and $3.86{\mu}m$ respectively. The extruded material microstructure contains layered grains with less grain boundaries and its counter-part SPS displays dense packed grains with high grain boundaries. Among both bulks, extrusion sample exhibited high power factor (PF) of $2.96{\times}10^{-3}Wm^{-1}K^{-2}$ which is 38% higher than SPS ($2.14{\times}10^{-3}$) bulk sample. Due to variations in grain size and grain boundaries, the SPS bulk shows low thermal conductivity than extruded bulk. However, the extruded bulk sample exhibited a peak ZT of 0.69 at 400 K, which is 19% higher than SPS bulk sample, due to its higher power factor.

• Current Applied Physics
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• 제18권12호
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• pp.1513-1522
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• 2018

Bismuth telluride ($Bi_2Te_3$) thin films were prepared with various electrolyte temperatures ($10^{\circ}C-70^{\circ}C$) and concentrations [$Bi(NO_3)_3$ and $TeO_2:1.25-5.0mM$] in this study. The surface morphologies differed significantly between the experiments in which these two electrodeposition conditions were separately adjusted even though the applied current density was in the same range in both cases. At higher electrolyte temperatures, a dendrite crystal structure appeared on the film surface. However, the surface morphology did not change significantly as the electrolyte concentration increased. The dendrite crystal structure formation in the former case may have been caused by the diffusion lengths of the ions increasing with increasing electrolyte temperature. In such a state, the reactive points primarily occur at the tops of spiked areas, leading to dendrite crystal structure formation. In addition, the in-plane thermoelectric properties of $Bi_2Te_3$ thin films were measured at approximately 300 K. The power factor decreased drastically as the electrolyte temperature increased because of the decrease in electrical conductivity due to the dendrite crystal structure. However, the power factor did not strongly depend on the electrolyte concentration. The highest power factor [$1.08{\mu}W/(cm{\cdot}K^2$)] was obtained at 3.75 mM. Therefore, to produce electrodeposited $Bi_2Te_3$ films with improved thermoelectric performances and relatively high deposition rates, the electrolyte temperature should be relatively low ($30^{\circ}C$) and the electrolyte concentration should be set at 3.75 mM.

• 전자통신동향분석
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• 제28권5호
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• pp.93-99
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• 2013

열전소자는 태양에너지를 이용한 발전뿐만 아니라, 체열, 차량 폐열 및 지열 등의 다양한 폐열을 이용한 발전 등으로 매우 다양하게 활용되고 있다. 하지만 상온부근에서 널리 사용되는 $Bi_2Te_3$의 재료 희귀성으로 인하여 산업화 기술로써의 활용에 어려운 측면이 있다. 이러한 이유로, 최근에는 $Bi_2Te_3$를 대체할 수 있는 새로운 열전재료를 전세계적으로 활발히 연구하고 있다. 본고에서는 최근 들어 나노기술 접목으로 새로이 주목받고 있는 열전소자의 동작 원리에 대한 간략한 소개와 특히, 실리콘을 이용한 나노기술의 접목을 통한 열전소자의 최근 연구 동향에 대하여 살펴보고자 한다.

• Biomolecules & Therapeutics
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• 제30권5호
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• pp.418-426
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• 2022

Chimeric antigen receptor T (CAR-T) cell therapy is one of the promising anticancer treatments. It shows a high overall response rate with complete response to blood cancer. However, there is a limitation to solid tumor treatment. Additionally, this currently approved therapy exhibits side effects such as cytokine release syndrome and neurotoxicity. Alternatively, bispecific antibody is an innovative therapeutic tool that simultaneously engages specific immune cells to disease-related target cells. Since programmed death ligand 1 (PD-L1) is an immune checkpoint molecule highly expressed in some cancer cells, in the current study, we generated αCD3xαPD-L1 bispecific antibody (BiTE) which can engage T cells to PD-L1⁺ cancer cells. We observed that the BiTE-bound OT-1 T cells effectively killed cancer cells in vitro and in vivo. They substantially increased the recruitment of effector memory CD8⁺ T cells having CD8⁺CD44⁺CD62L^low phenotype in tumor. Interestingly, we also observed that BiTE-bound polyclonal T cells showed highly efficacious tumor killing activity in vivo in comparison with the direct intravenous treatment of bispecific antibody, suggesting that PD-L1-directed migration and engagement of activated T cells might increase cancer cell killing. Additionally, BiTE-bound CAR-T cells which targets human Her-2/neu exhibited enhanced killing effect on Her-2-expressing cancer cells in vivo, suggesting that this could be a novel therapeutic regimen. Collectively, our results suggested that engaging activated T cells with cancer cells using αCD3xαPD-L1 BiTE could be an innovative next generation anticancer therapy which exerts simultaneous inhibitory functions on PD-L1 as well as increasing the infiltration of activated T cells having effector memory phenotype in tumor site.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 춘계학술대회 논문집
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• pp.454-456
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• 2009

N-Type $SbI_3$ doped $95%Bi_2Te_3+5%\;Bi_2Se_3$ compounds were newly fabricated by the combination of gas atomization process and Magnetic Pulsed Compaction process. The thermoelectric properties of the MPCed bulks according to consolidation temperatures were investigated by a combination of microscopy, XRD and thermoelectric property testing. The microstructure of MPCed bulk shows homogeneous and fine distribution through consolidated bulks due to the high solidification of compound powders. The research presented the challenges toward the successful consolidation of thermoelectric powder using magnetic pulsed compaction (MPC) and analysis of thermoelectric properties of the consolidated bulks.