• Title/Summary/Keyword: ${\omega}-3$

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Effects of Cobalt Protective Coating Prepared by DC Electroplating on Ferritic Stainless Steel for SOFC Interconnect (직류 전기도금을 이용한 고체산화물 연료전지 금속연결재용 페라이트계 스테인리스 스틸의 코발트 보호막 코팅 효과)

  • Hong, Jong-Eun;Lim, Tak-Hyung;Song, Rak-Hyun;Lee, Seung-Bok;Shin, Dong-Ryul;Yoo, Young-Sung;Lee, Dok-Yol
    • Transactions of the Korean hydrogen and new energy society
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    • v.20 no.2
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    • pp.116-124
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    • 2009
  • We investigated the influences of cobalt coating deposited by DC electroplating on the ferritic stainless steel, STS 430, as a protective layer on a metallic interconnect for SOFC applications. Cobalt coated STS 430 revealed a uniform and denser-packing oxide surface and a reduced growth rate of $Cr_2O_3$ scales after oxidation at $800^{\circ}C$in air. Cobalt coating layer was oxidized to $CoCo_2O_4$ and Co containing mixed oxide spinels such as $Co_2CrO_4$, $CoCr_2O_4$, and $CoCrFeO_4$. The area specific resistance value of Co coated sample was $0.020\;{\Omega}cm^2$ lower than that of uncoated at $800^{\circ}C$ in air during 500 h. After 1000 h oxidation, cobalt oxide coating layer suppressed chromium outward diffusion.

A Study of the Optimal Process Conditions of AZO:H2 Thin Film for Maximization of the Transmittance of a Blue GaN Light-Emitting Diode with a Wavelength of 470 nm

  • Hwang, Seung-Taek;Park, Choon-Bae;Hoang, Geun-C.
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.6
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    • pp.279-284
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    • 2010
  • This study has been carried out to determine the optimal process conditions of $AZO:H_2$ thin films for the maximization of the transmittance of a blue GaN light-emitting diode (LED) with a wavelength of 470 nm. The Al-doped zinc oxide $(AZO):H_2$ thin films were deposited on a sapphire substrate by radio-frequency magnetron sputtering system with varying substrate temperatures, working pressures and annealing temperatures temperature, working pressure and annealing imposed on a AZO (2wt% $Al_2O_3$) ceramic target. The effect of these variables was investigated in order to improve the light extraction efficiency of the LED. As a result, the (002)-oriented peak was found in all the $AZO:H_2$ thin films. The lowest resistivity and the best transmittance at a wavelength of 470 nm was found to be $4.774\;{\times}\;10^{-4}\;{\Omega}cm$ and 92% at a substrate temperature of $500^{\circ}C$, working pressure of 7 mTorr and annealing temperature of $400^{\circ}C$. The transmittance of the $AZO:H_2$ thin film for the Blue GaN LED was improved by approximately 13% relative to that of a ITO thin film (T = 79%).

Properties of ZnO:Ga Thin Film Fabricated on Polyimide Substrate by RF Magnetron Sputtering (폴리이미드 기판 위에 RF 마그네트론 스퍼터링 공정으로 증착된 ZnO:Ga 박막의 특성)

  • Park, Seung-Beum;Kim, Jeong-Yeon;Kim, Byeong-Guk;Lim, Jong-Youb;Yeo, In-Hwan;Ahn, Sang-Ki;Kweon, Soon-Yong;Park, Jae-Hwan;Lim, Dong-Gun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.5
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    • pp.374-378
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    • 2010
  • The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on polyimide substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the polyimide substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 120 sec, the resistivity of GZO films on the polyimide substrate was $1.90{\times}10^{-3}{\Omega}-cm$.

The effects of annealing of the ATO films prepared by RF magnetron sputtering (RF 마그네트론 스퍼터를 이용한 ATO 박막의 열처리 효과)

  • Park, Sei-Yong;Lee, Sung-Uk;Park, Mi-Ju;Kim, Young-Ryeol;Hong, Byung-You
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.270-271
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    • 2008
  • Antimony (6 wt%) doped tin oxide (ATO) films to improve conductivity were deposited on 7059 coming glass by RF magnetron sputtering method for application to transparent electrodes. The ATO film was deposited at a working pressure of 5 mTorr and RF power of 175 W. We investigated the effects of the post-annealing temperature on structural, electrical and optical properties of the ATO films. The films were annealed at temperatures ranging from $300^{\circ}C$ to $600^{\circ}C$ in step of $100^{\circ}C$ using RTA equipment in vacuum ambient. X-ray diffraction (XRD) measurements showed the ATO films to be crystallized with a strong (101) preferred orientation as the annealing temperature increased. Electrical resistivity decreased significantly with annealing temperatures up to $600^{\circ}C$. ATO film annealed at temperature of $600^{\circ}C$ showed the lowest resistivity of $5.6\times10^{-3}\Omega$-cm. Optical transmittance increased significantly with annealing temperatures up to $600^{\circ}C$. The highest transmittance was 90.8 % in the visible range from 400 to 800 nm.

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Fabrications and Properties of Al/$VF_2$/$n^+$-Si(100) Structures by Dip Coating Methode (Dip Coating 법에 의한 Al/$VF_2$-TrFE/Si(100) 구조의 제작 특성)

  • Kim, Ka-Lam;Jeong, Sang-Hyun;Yun, Hyeong-Seon;Lee, Woo-Seok;Kwak, No-Won;Kim, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.20-21
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    • 2008
  • Ferroelectric vinylidene fluoride-trifluoroethylene ($VF_2$-TrFE) copolymer films were directly deposited on degenerated Si ($n^+$, 0.002 $\Omega{\cdot}cm$) using by dip coating method. A 1 ~ 3 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene ($VF_2$:TrFE=70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers using dip coating method for 10 seconds. After Post-Annealing in a vacuum ambient at 100~200 $^{\circ}C$ for 60 min, upper aluminum electrodes were deposited by thermal evaporation through the shadow mask to complete the MFS structure. The ferroelectric $\beta$-phase peak of films, depending on the annealing temperature, started to show up around $125^{\circ}C$, and the intensity of the peak increased with increasing annealing temperature. Above $175^{\circ}C$, the peak started to decrease. The C-V characteristics were measured using a Precision LCR meter (HP 4284A) with frequency of 1MHz and a signal amplitude of 20 mV. The leakage-current versus electric-field characteristics was measured by mean of a pA meter/DC voltage source (HP 4140B).

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Numerical Analysis on Effects of Radius Ratio in a Concentric Annulus with a Rotating Inner Cylinder (내부회전실린더를 가진 동심환형관에서 반경비의 영향에 관한 수치해석적 연구)

  • Bae, Kang-Youl;Kim, Hyoung-Bum;Lee, Sang-Hyuk
    • 유체기계공업학회:학술대회논문집
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    • 2006.08a
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    • pp.327-330
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    • 2006
  • This paper represents the numerical analysis on effects of radius ratio in a concentric annulus with a rotating inner cylinder. The numerical model consisted of two cylinder which inner cylinder is rotating and outer cylinder is fix, and the axial direction is used the cyclic condition because of the length for axial direction is assumed infinite. The diameter of inner cylinder is assumed 86.8mm, the numerical parameters are angular velocity and radius ratio. Also, the whole walls of numerical model have no-slip and the working fluid is used water at $20^{\circ}C$. The numerical analysis is assumed the transient state to observe the flow variations by time and the 3-D cylindrical coordinate system. The calculation grid adopted a non-constant grid for dense arrangement near the wall side of cylinder, the standard $k-{\omega}$ high Reynolds number model to consider the effect of turbulence flow and wall, the fully implicit method for time term and the quick scheme for momentum equation. The numerical method is compared with the experimental results by Wereley and Lueptow, and the results are very good agreement. As the results, TVF isn't appeared when Re is small because of the initial flow instability is disappear by effect of the centrifugal force and viscosity. The vortex size is from 0.8 to 1.1 for TVF at various $\eta$, and the traveling distance for wavy vortex have the critical traveling distance for each case.

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An Experimental Study on Flow Characteristics of Turbulent Pulsating Flow in a Curved Duct by using LDV (LDV에 의한 곡관덕트에서 난류맥동유동의 유동특성에 관한 실험적 연구)

  • Lee, Hong-Gu;Son, Hyun-Chul;Lee, Haeng-Nam;Park, Gil-Moon
    • Proceedings of the KSME Conference
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    • 2000.11b
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    • pp.397-403
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    • 2000
  • In the present study, flow characteristics of turbulent pulsating flow in a square-sectional $180^{\circ}$ curved duct were experimentally investigated. Experimental studies for air flows were conducted to measure axial velocity and wall shear stress distributions and entrance length in a square-sectional $180^{\circ}$ curved duct by using the LDV with the data acquisition and the processing system. The experiment was conducted in seven sections from the inlet (${\phi}=0^{\circ}$) to the outlet (${\phi}=180^{\circ}$) at $30^{\circ}$ intervals of the duct. The results obtained from the experimentation were summarized as follows ; (1) When the ratio of velocity amplitude ($A_1$) was less than one, there was hardly any velocity change in the section except near the wall and any change in axial velocity distributions along the phase. When the ratio of velocity amplitude ($A_1$) was 0.6, the change rate of velocity was slow. (2) Wall shear stress distributions of turbulent pulsating flow were similar to those of turbulent steady flow. The value of the wall shear stress became minimum in the inner wall aid gradually increased toward the outer wall where it became maximum. (3) The entrance length of turbulent pulsating flow reached near the region of bend angle of $90^{\circ}$, like that of turbulent steady flow. The entrance length was changed by the dimensionless angular frequency (${\omega}^+$).

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Preparation and Characterization of Heating Element for Inkjet Printer (잉크젯 프린터용 발열체의 제작과 특성연구)

  • 장호정;노영규
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.3
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    • pp.1-7
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    • 2003
  • The crystallized stable cobalt silicide$(CoSi_2)$ films were prepared on $poly-Si/SiO_2/Si$substrates for the application of inkjet printing head as a heating element with omega shape. The structural images and temperature resistance coefficient were investigated. The value of temperature resistance coefficient of the heating element was found to be about $0.0014/^{\circ}C$. The maximum power of the heating element was 2 W at the applied voltage of 2 V, 10 kHz in frequency and $1{\mu}s$ in pulse width. From the investigation of fatigue property according to the repeated applied voltages, there was no drastic changes in the resistances of heating element under the condition of $10^8$ pulsed cycles at below 15 V biased voltage. In contrast, the resistance of heating element was greatly increased at $10^6$ pulsed cycles when the heating element was operated at 17 V.

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Design of Broadband CPW-Fed Square Slot Antennas (CPW 급전 광대역 사각 슬롯 안테나 설계)

  • Choi, Soon-Shin;Kim, Joon-Il;Jee, Yong
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.11
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    • pp.107-115
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    • 2005
  • This paper presents the structure of a broadband coplanar waveguide(CPW) fed square slot antenna with a impedance bandwidth tuning patch. The designing method of the antenna suggests that two resonant frequencies are excited as a dual-frequency dipole antenna following the dimensions of the square slot. In other words, the lower resonant frequency mainly depends on the slot width and the higher one its length. A CPW fed square slot antenna with a impedance tuning patch was measured to $20GHz^\~33GHz$, $50\%$, VSWR=2 impedance bandwidth by adjusting the dimensions of the tuning patch when the slot length had $70\%$ of its width. This result shows that a medical CPW fed antenna is easily implemented with a simple square slot structure including a bandwidth tuning patch in the center.

Solubility of Ibuprofen in Supercritical Carbon Dioxide (초임계 이산화탄소를 이용한 Ibuprofen의 용해도 측정)

  • Kim, Young Ae;Chu, Junho;Lim, Jong Sung;Kim, Hwayoung;Lee, Youn-Woo
    • Clean Technology
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    • v.11 no.3
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    • pp.147-152
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    • 2005
  • For estblishing the best technique for the micronization of Ibuprofen using supercritical fluids, the solubility should be known. The solubility of Ibuprofen in supercritical carbon dioxide was measured by observing the cloud point. The cloud point was observed using high pressure equipment equipped a variable volume view cell between temperature of 35, 40 and $45^{\circ}C$. The solubility data was correlated by the Peng-Robinson equation of state Solute physical properties, such as critical temperature (Tc), critical pressure (Pc) and acentric factor (${\omega}$) were estimated by the some group contribution method. As pressure was increased, the solubility increased at constant temperature. The retrograde phenomenon by a solute vapor pressure and a density of solvent was observed at the pressure of around 150bar. It was found that $CO_2$ can be used as a supercritical solvent in micronization of ibuprofen by RESS.

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