• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.688-689
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• 2006

Ni-doped $CoSb_3$ was prepared by the encapsulated induction melting and hot pressing, and its doping effects on the thermoelectric properties were investigated. Single phase $\delta-CoSb_3$ was successfully obtained by the subsequent heat treatment at 773K for 24 hours. Nickel atoms acted as electron donors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by the appropriate doping.

• Journal of Magnetics
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• v.18 no.4
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• pp.386-390
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• 2013

This paper studies the effects of A-site substitution by barium on the magnetic and magnetocaloric properties of $Pr_{0.5}Sr_{0.5-x}Ba_{x}MnO_{3}$ (x = 0, 0.04, 0.08 and 0.1). The tetragonal crystal structures of the samples are confirmed by room temperature X-ray diffraction. The dependence of the Curie temperature ($T_C$) and the magnetic entropy change (${\Delta}S_M$) on the Ba doping content has been investigated. The samples of all doping contents undergo the second order phase transition. As the concentration of Ba increased, the maximum entropy change ($|{\Delta}S_M|_{max}$) increased gradually, from 1.15 J $kg^{-1}$ $K^{-1}$ (x = 0) to 1.36 J $kg^{-1}$ $K^{-1}$ (x = 0.1), in a magnetic field change of 1.5 T. The measured value of $T_C$ is 265 K, 275 K, 260 K and 250 K for x = 0, 0.04, 0.08 and 0.1, respectively. If combining these samples for magnetic refrigeration, the temperature range of ~220 K and 290 K, where |${\Delta}S_M$|max is stable at ~1.27 J $kg^{-1}$ $K^{-1}$ and RCP = 88.9 $J{\cdot}kg^{-1}$ for ${\Delta}H$ = 1.5 T. $Pr_{0.5}Sr_{0.5-x}Ba_{x}MnO_{3}$ compounds, are expected to be suitable for magnetic-refrigeration application due to these magnetic properties.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• Journal of Magnetics
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• v.11 no.1
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• pp.12-15
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• 2006

Magnetic and electronic properties of reduced rutile titanium dioxide $(TiO_{2-\delta})$ thin films doped by Mn have been investigated. The present sol-gel-grown semiconducting $TiO_{2-\delta}:Mn$ films exhibit a ferromagnetic behavior at room temperature for a limited range of Mn content. The Mn-doped films have p-type electrical conductivity with the carrier concentration near $10^{19}\;cm^{-3}$. The observed room-temperature ferromagnetism is believed to be intrinsic but not related to free carriers such as holes. Oxygen vacancies are likely to contribute to the room-temperature ferromagnetism-trapped carriers in oxygen vacancies can mediate a ferromagnetic coupling between neighboring $Mn^{+3}$ ions. The energy band-gap change due to the Mn doping measured by spectroscopic ellipsometry exhibits a red-shift compared to that of the undoped sample at low Mn content. It is explainable in terms of strong spin-exchange interactions between Mn ion and the carrier.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.285-296
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• 2005

Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

• Electrical & Electronic Materials
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• v.6 no.6
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• pp.514-522
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• 1993

본 연구에서는 Ag/ 첨가에 의한 YB $a_{2}$C $u_{3}$ $O_{7-{\delta}}$산화물의 초전도 특성 변화를 조사하였다. Ag가 첨가된 YB $a_{2}$C $u_{3-x}$A $g_{x}$ $O_{7-{\delta}}$ 산화물 시료를 만들고 이 시료들에 대한 X-ray 회절분석, IR흡수 스펙트럼분석, 임계온도(Tc)측정 및 자화(M-H)특성 측정등을 통하여 제조된 시료의 물리적 성질을 조사하였다. X-ray 회절실험 결과로 부터 x.leq.0.03인 경우에는 YB $a_{2}$C $u_{3-x}$A $g_{x}$ $O_{7-{\delta}}$가 단일상의 물질로 존재하고 x가 증가함에 따라 불순물상( $Y_{2}$ $O_{3}$, 순Ag)이 나타남을 알 수 있었다. IR흡수의 실험결과에서 Cu와 치환되어 들어간 Ag의 Ag-O 결합에 의한 흡수 스펙트럼(670$cm^{-1}$ /)이 관측되었다. 실험 결과로 부터 치환된 Ag의 양 x가 증가함에 따라 Tc가 조금씩 낮아지는 경향이 있었으며 자화의 세기 및 임계자장( $H_{C2}$)은 급격히 감소함을 알 수 있었고 또 M-H특성곡선에는 히스테리시스 특성이 나타났다.났다..났다.다.

• Korean Journal of Materials Research
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• v.16 no.6
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• pp.377-381
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• 2006

Skutterudite $CoSb_3$ doped with nickel was prepared by encapsulated induction melting, and its doping effects on thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by encapsulated induction melting and subsequent heat treatment at 773 K for 24 h. Nickel atoms acted as electron donors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by appropriate heat treatment and doping, and they were closely related to phase transitions and dopant activation. The maximum ZT(dimensionless figure of merit) was achieved as 0.2 at 600 K for the $Co_{0.93}Ni_{0.07}Sb_3$ specimen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.83-84
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• 2007

Sn-filled and Ni-doped $CoSb_3$ skutterudites were prepared by encapsulated induction melting, and their filling and doping effects on thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by encapsulated induction melting and subsequent heat treatment at 823K for 5 days. Nickel atoms acted as electron donors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by Sn filling and Ni doping.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.435-438
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• 2006

The hot pressing was employed to prepare Fe-doped $CoSb_3$ skutterudites and their thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by the hot pressing under 60MPa at 773 K for 2 hrs. Iron atoms acted as electron acceptors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by the appropriate doping. $Co_{0.7}Fe_{0.3}Sb_3$ was found as an optimum composition for the best thermoelectric property in this work.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1473-1476
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• 2008

Doping the nanoparticles of Pd, p-$BaTiO_3$, $SiO_2$ and MgO into LCs alters their physical properties such as $K_{ii}$, $\Delta\varepsilon$, ${\Delta}n$, $\gamma_1$ and $T_{NI}$. Except for $K_{33}$, all these parameters decreases and thus bring the reduction of operating voltage and/or response times.